NTE-ELECTRONICS–INC–NTE2634

NTE2633 (NPN) & NTE2634 (PNP)  

Silicon Complementary Transistors  

High Frequency Video Driver  

Description:  

The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126  

type package designed for use in the buffer stage of the driver for high–resolution color graphics moni-  

tors.  

Features:  

D

High Breakdown Voltage  

D

Low Output Capacitance  

Absolute Maximum Ratings:  

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

115V  

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

95V  

Collector–Emitter Voltage (R

BE

= 100

Ω

), V

CER

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

110V  

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3V  

DC Collector Current, I

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

300mA  

T

o

tal Power Dissipation (T

S

≤

+115

°

C, Note 1), P

tot

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3W  

Operating Junction

T

e

mperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175

°

C  

Storage

T

e

mperature Range,

T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65

°

to +175

°

C  

Thermal Resistance, Junction–to–Soldering Point (T

S

≤

+115

°

C, Note 1), R

thJS

. . . . . . . . .

 

20K/W  

Note 1.

 

T

S

is the temperature at the soldering point of the collector lead.  

Electrical Characteristics:

 

(T

J

= +25

°

C unless otherwise specified)  

Parameter  

Symbol  

Test Conditions  

Min Typ Max

 

Unit  

Collector–Base Breakdown Voltage  

Collector–Emitter Breakdown Voltage  

V

I =

 

0.1mA  

115  

95  

110  

3

–

–

–

–

–

–

V

V

V

V

(BR)CBO  

(BR)CEO  

(BR)CER  

(BR)EBO  

C

V

V

V

I =

 

10mA  

C

I =

 

10mA, R

 

= 100

Ω

 

C

–

BE  

Emitter–Base Breakdown Voltage  

Collector Cutoff Current  

I =

 

0.1mA  

E

–

I

I =

 

0, V

 

= 50V  

–

–

100

µ

A  

CES  

B

CE  

I

I =

 

0, V

 

= 50V  

–

–

20  

–

µ

A  

CBO  

E

CB  

DC Current Gain  

h

I =

 

50mA, V

 

= 10V, T

 

= +25

°

C  

20  

35  

FE  

C

CE  

A

Transition Frequency  

f

I =

 

50mA, V

 

= 10V, f = 100MHz,  

A

0.8 1.2  

–

GHz  

pF  

T

C

CE  

T =

 

+25

°

C  

Collector–Base Capacitance  

C

I =

 

0, V

 

= 10

V

, f =

1

MHz, T

 

= +25

°

C  

–

2.0  

–

cb  

C

CB  

A

.330 (8.38) Max  

.175  

(4.45)  

Max  

.450  

(11.4)  

Max  

.118  

(3.0)  

Dia  

.655  

(16.6)  

Max  

.030 (.762) Dia  

E

C

B

.090 (2.28)  

.130 (3.3)  

Max