NTE-ELECTRONICS–INC–NTE5409
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NTE5408 thru NTE5410
Silicon Controlled Rectifier (SCR)
3 Amp Sensitive Gate, TO5
Description:
The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and
MOS devices.
These SCRs feature proprietary, void
−
free glass
−
passivated chips and are hermeti-
cally sealed in TO5 type packages.
These 4A devices are available in voltages up to 600V and with
a gate current of 200
μ
A.
These NTE SCRs are reverse
−
blocking triode thyristors and may be switched from off
−
state to con-
duction by a current pulse applied to the gate terminal.
The NTE5408 through NTE5410 are designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
C
= +100
°
C), V
RRM
NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off
−
State Voltage (T
C
= +100
°
C), V
DRXM
NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On
−
State Current (T
C
= +75
°
C, Conduction Angle of 180
°
), I
T(RMS)
. . . . . . . . . . . . . . . . . . .
4A
Peak Surge (Non
−
Repetitive) On
−
State Current (One Cycle at 50 or 60Hz), I
TSM
. . . . . . . . . . .
40A
Peak Gate
−
Trigger Current (3
μ
s Max), I
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A
Peak Gate
−
Power Dissipation (I
GT
≤
I
GTM
for 3
μ
s Max), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
20W
Average Gate Power Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW
Operating
T
e
mperature Range,
T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
40
°
to +100
°
C
Storage
T
e
mperature Range,
T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
40
°
to +150
°
C
Typical Thermal Resistance, Junction
−
to
−
Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+5
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
I
RRM
−
−
−
−
−
−
−
−
−
−
−
0.75
0.75
2.2
5
mA
mA
V
Peak Off
−
State Current
V
RRM
= Max, V
DRXM
= Max,
T
C
= +100
°
C, R
GK
= 1k
Ω
I
DRXM
V
TM
Maximum On
−
State Voltage
DC Holding Current
I
T
= 10A (Peak)
−
I
HOLD
R
GK
= 1000
Ω
−
mA
μ
A
V
DC Gate
−
Trigger Current
DC Gate
−
Trigger Voltage
Gate Controlled Turn
−
On Time
I
2
t for Fusing Reference
I
GT
V
GT
t
gt
V
D
= 6VDC, R
L
= 100
Ω
−
200
0.8
−
V
D
= 6VDC, R
L
= 100
Ω
I
G
x 3
GT
−
1.2
−
μ
s
I
2
t
For SCR Protection
2.6 A
2
sec
Critical Rate of Applied
Forward Voltage
dv/dt R
GK
= 1k
Ω
, T
C
= +100
°
C
(critical)
5
−
V/
μ
s
.352 (8.95) Dia Max
.325 (8.13) Dia Max
.250
(6.35)
Max
.500
(12.7)
Min
.019 (0.5)
Gate
Cathode
Anode
45
°
.031 (.793)
