NTE-ELECTRONICS–INC–NTE5437
| Part # | NTE-ELECTRONICS–INC–NTE5437 |
Download  | NTE-ELECTRONICS–INC–NTE5437 |
NTE5437 & NTE5438
Silicon Controlled Rectifier (SCR)
8 Amp Sensitive Gate, TO220
Description:
The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed
to provide a high dv/dt rate with strong resistance to electromagnetic interfaces. They are especially
recommended for use on residual current circuit breakers, straight hair, igniters, etc.
Absolute Maximum Ratings:
Non
−
Repetitive Peak Off
−
State Voltage, V
DSM
NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non
−
Repetitive Peak Reverse Voltage, V
RSM
NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On
−
State Current (T
C
= +90
C), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8A
Non
−
Repetitive Surge Peak On
−
State Current (t
p
= 10ms), I
TSM
. . . . . . . . . . . . . . . . . . . . . . . . . 100A
Fusing Current (t
p
= 10ms), I
2
t .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50A
2
s
Critical rate of Rise of ON
−
State Current, dI/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50A/
m
s
Peak Gate Current (t
p
= 20
s, T
J
= +110
C), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2A
Peak Gate Dissipation (t
p
= 20
s, T
J
= +110
C), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3W
Average Gate Dissipation (T
J
= +110
C), P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W
Operating Junction
T
e
mperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
40
to +110
C
Storage
T
e
mperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
40
to +150
C
Thermal Resistance, Junction
−
to
−
Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.3
C/W
Electrical Characteristics:
(T
J
= +25
C unless otherwise specified)
Parameter
Gate Trigger Current
Gate Trigger Voltage
Gate Non
−
Trigger Voltage
Latching Current
Symbol
Test Conditions
Min
−
Typ Max Unit
I
GT
V =
12V, R
= 33
60
−
200
0.8
−
A
V
D
L
V
GT
V =
12V, R
= 33
−
D
L
V
GD
V =
V
D
, T
= +110
C
0.2
−
−
V
DRM
J
I
L
I =
1.2 I
G GT
−
6
mA
Holding Current
I
H
I =
0.05A
T
−
−
5
mA
Critical Rate of Voltage Rise
dV/dt
V =
526V, R
= 100
, T
= +110
C
50
100
−
V/
s
Rev. 11
−
19
D
GK
J
Electrical Characteristics (Cont’d):
(T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Static Characteristics
Maximum On
−
State Voltage
Off
−
State Leakage Current
V
I
= 24A, t
= 380
s
−
−
−
−
−
−
1.6
10
2
V
TM
TM
p
I
, I
V =
V
, V
= V
DRM RRM
A
mA
DRM RRM
D
R
T =
+110
C
J
.420 (10.67)
Max
.110 (2.79)
Anode
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode
Gate
Anode
.100 (2.54)
