NTE-ELECTRONICS–INC–NTE5571

NTE5567, NTE5568, NTE5569, & NTE5571  

Silicon Controlled Rectifier (SCR)  

80 Amp (I

T(RMS)

), TO65 (TO208AC)  

Features:  

D

High Current Rating  

D

Excellent Dynamic Characteristics  

D

Superior Surge Capabilities  

D

Standard Package  

Voltage Ratings and Electrical Characteristics:

 

(T

J

= +125



C unless otherwise specified)  

Parameter  

Symbol  

Test Conditions  

Values Unit  

Maximum Repetitive Peak Forward & Reverse Voltage  

NTE5567  

V

Note 1  

DRM,  

V

RRM  

200  

600  

V

V

V

V

NTE5568  

NTE5569  

NTE5571  

1200  

1600  

Maximum Non

−

Repetitive Peak Voltage  

V

RSM  

Note 2  

NTE5567  

300  

700  

1300  

1700  

15  

V

V

NTE5568  

NTE5569  

V

NTE5571  

V

Peak Reverse & Off

−

State Current  

I

, I  

mA  

DRM RRM  

Average On

−

State Current  

I

T(AV)  

NTE5567, NTE5568, NTE5569  

T =

 

+94



C  

C

180



Sinusoidal  

Conduction  

50  

50  

A

A

A

A

NTE5571  

T =

 

+90



C  

C

RMS On

−

State Current  

I

80  

T(RMS)  

Peak One

−

Cycle Non

−

Repetitive Surge Current  

I

t = 10ms, No Voltage Reapplied,  

Sinusoidal Half Wave  

1200  

TSM  

2

2

I t for Fusing  

I t  

2

NTE5567, NTE5568, NTE5569  

t = 10ms,  

No Voltage  

10.18  

7.21  

7.20  

5.10  

KA s  

Sinusoidal Half Wave

 

Reapplied  

2

NTE5571  

KA s  

2

NTE5567, NTE5568, NTE5569  

NTE5571  

KA s  

100% V  

RRM  

Reapplied  

2

KA s  

Note 1.

 

Units may be broken over non

−

repetitively in the off

−

state direction without damage, if di/dt  

does not exceed 20A/



s.  

Note 2.

 

For voltage pulses with t

p



5ms.  

Rev. 6

−

19  

Voltage Ratings and Electrical Characteristics (Cont’d):

 

(T

J

= +125



C unless otherwise specified)  

Parameter  

Symbol  

Test Conditions  

Values Unit  

2

2

I



t for Fusing  

I



t  

2

NTE5567, NTE5568, NTE5569  

t = 0.1 to 10ms,  

No Voltage Reapplied  

10.18 KA

 



s  

2

NTE5571  

7.21  

KA



s  

Low Level Value of Threshold Voltage  

NTE5567, NTE5568, NTE5569  

I

T(TO)  

16.7% x



x I  

< I <



x I  

T(AV)  

0.94  

1.02  

V

V

T(AV)  

NTE5571  

High Level Value of Threshold Voltage  

NTE5567, NTE5568, NTE5569  

I

T(TO)2  



x I  

< I < 20 x



x I  

T(AV)  

1.08  

1.17  

V

V

T(AV)  

NTE5571  

Low Level Value of On

−

State Slope Resistance  

r

T1  

NTE5567, NTE5568, NTE5569  

16.7% x



x I  

< I <20 x



x I  

T(AV)  

4.08  

4.78  

m

  

m

  

T(AV)  

NTE5571  

High Level Value of On

−

State Slope Resistance  

r

T2  

NTE5567, NTE5568, NTE5569  



x I  

< I < 20 x



x I  

T(AV)  

3.34  

3.97  

m

  

m

  

T(AV)  

NTE5571  

Maximum On

−

State Voltage  

V

TM  

NTE5567, NTE5568, NTE5569  

I

pk  

= 157A, T

 

= +25



C  

J

1.60  

1.78  

200  

V

V

NTE5571  

Maximum Holding Current  

I

H

mA  

T =

 

+25



C, Anode Supply 22

V

,  

J

Resistive Load, Initial I

 

= 2A  

T

Latching Current  

I

L

Anode Supply 6

V

,

R

esistive Load  

400  

mA  

Maximum Rate of Rise of Turned

−

On Current  

di/dt  

NTE5567, NTE5568,  

V

= Rated V  

, Gate Pulse = 20

V

,  

200  

100  

0.9  

A/



s  

A/



s  



s  

DM  

DRM  

r

15



, t

 

= 6



s, t

 

= 0.1



s Max,  

p

NTE5569, NTE5571  

Typical Delay Time  

I

= (2 x Rated di/dt) A  

TM  

t

d

T =

 

+25



C, V

 

= Rated V  

, DC  

DRM  

C

DM  

Resistive Circuit, Gate Pulse = 10

V

,  

15



Source, t

 

= 20



s  

p

Typical Turn

−

Off Time  

t

q

T =

 

+125



C, I

 

= 50A, Reapplied  

110  



s  

C

TM  

dv/dt = 20V/



s, dir/dt = 10A/



s,  

V =

 

50V  

R

Linear to 100% Rated V  

200  

500  

10  

V/



s  

V/



s  

W

Maximum Critical Rate of Rise of  

dv/dt  

DRM  

Off

−

State Voltage  

Linear to 67% Rated V  

DRM  

Maximum Peak Gate Power  

P

G(AV)  

t



5ms  

p

Maximum Average Gate Power  

P

2.5  

2.5  

10  

W

GM  

Maximum Peak Positive Gate Current  

Maximum Peak Positive Gate Voltage  

Maximum Peak Negative Gate Voltage  

DC Gate Current Required to Trigger  

DC Gate Voltage Required to Trigger  

I

A

GM  

+V  

V

GM  

GM  

−

V  

10  

V

I

GT  

6

V

,

A

node

−

to

−

Cathode Applied  

6

V

,

A

node

−

to

−

Cathode Applied,  

100  

2.5  

mA  

V

V

GT  

T =

 

+25



C  

J

DC Gate Current Not to Trigger  

I

Rated V  

, Anode

−

to

−

Cathode  

DRM  

5.0  

mA  

GD  

Applied  

Note 1.

 

Units may be broken over non

−

repetitively in the off

−

state direction without damage, if di/dt  

does not exceed 20A/



s.  

Note 2.

 

For voltage pulses with t

p



5ms.  

Voltage Ratings and Electrical Characteristics (Cont’d):

 

(T

J

= +125



C unless otherwise specified)  

Parameter  

Symbol  

Test Conditions  

, Anode

−

to

−

Cathode  

DRM  

Values  

Unit  

DC Gate Voltage Not to Trigger  

V

GD  

Rated V  

Applied  

0.2  

V

Operating Junction

T

e

mperature Range  

Storage

T

e

mperature Range  

T

−

40 to +125  

−

40 to +125  

0.35  



C  



C  

J

T

stg  

Thermal Resistance, Junction

−

to

−

Case  

Thermal Resistance, Case

−

to

−

Heatsink  

R

DC Operation  

K/W  

K/W  

thJC  

thCS  

R

Mounting Surface Smooth, Flat, and  

Greased  

0.25  

Mounting

T

o

rque  

T

Non

−

Lubricated Threads  

2.8  

Nm  

Note 1.

 

Units may be broken over non

−

repetitively in the off

−

state direction without damage, if di/dt  

does not exceed 20A/



s.  

Note 2.

 

For voltage pulses with t

p



5ms.  

Gate  

.250 (6.35)  

Cathode  

.067 (1.72) Dia  

.120 (3.04)  

.136 (3.47) Dia  

1.32  

(33.60)  

Max  

.667  

(16.95)  

Dia Max  

.944  

(24.0)  

Max  

.494  

(15.10)  

Max  

.208 (5.30)  

Max  

.422  

(10.74)  

Max  

Anode  

1/4

−

28 UNF

−

2A  

.675 (17.15)  

Across Flats