NTE-ELECTRONICS–INC–NTE56040

NTE56040 & NTE56041  

TRIAC, 4A Sensitive Gate  

Description:  

The NTE56040 and NTE56041 are glass passivated, sensitive gate TRIACs in a TO220 type package  

designed for use in general purpose bidirectional switching and phase control applications, where  

high sensitivity is required in all four quadrants.  

Absolute Maximum Ratings:  

Repetitive Peak Off–Sate Voltage (Note 1), V

DRM  

NTE56040 .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V  

NTE56041 .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  

RMS On–State Current (Full Sine Wave, T

MB

≤

107

°

C), I

T

(RMS) .

 

. . . . . . . . . . . . . . . . . . . . . . . . .

 

4A  

Non–Repetitive Peak On–State Current, I

TSM  

(Full Sine Wave, T

J

= +125

°

C prior to Surge, with Reapplied V

DRM

max)  

t = 20ms

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

25A  

t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

27A  

I

2

t for Fusing (t = 10ms), I

2

t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3.1A

2

sec  

Repetitive Rate–of–Rise of On–State Current after Triggering, dI

T

/dt  

(I

TM

= 6A, I

G

= 0.2A, dI

G

/dt = 0.2A/

µ

s)  

MT

2

(+), G (+)

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

50A/

µ

s  

MT

2

(+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

50A/

µ

s  

MT

2

(–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

50A/

µ

s  

MT

2

(–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

10A/

µ

s  

Peak Gate Current, I

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2A  

Peak Gate Voltage, V

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

5V  

Peak Gate Power, P

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

5W  

Average Gate Power (Over Any 20ms Period), P

G(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW  

Operating Junction

T

e

mperature, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125

°

C  

Storage

T

e

mperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40

°

to +150

°

C  

Thermal Resistance, Junction–to–Mounting Base, R

thJMB  

Full Cycle

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3.0K/W  

Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3.7K/W  

Typical Thermal Resistance, Junction–to–Ambient, R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

60K/W  

Note 1.

 

Although not recommended, off–state voltages up to 800V may be applied without damage,  

but the TRIAC may switch to the On–State. The rate–of–rise of current should not exceed  

3A/

µ

s.  

Electrical Characteristics:

 

(T

J

= +25

°

C unless otherwise specfied)  

Parameter  

Static Characteristics  

Gate Trigger Current  

Symbol  

Test Conditions  

Min  

Typ Max Unit  

MT (+),

 

G (+)  

I

V =

 

12

V

, I

 

=

0

.1A  

–

–

–

–

2.5  

4.0  

5.0  

11  

10  

10  

10  

25  

mA  

mA  

mA  

mA  

2

GT  

D

T

MT (+),

 

G (

–

)  

2

MT (

–

), G (

–

)  

2

MT (

–

), G (+)  

2

Latching Current  

MT (+),

 

G (+)  

I

V =

 

12

V

, I

 

=

0

.1A  

–

–

3.0  

10  

15  

20  

15  

20  

15  

1.7  

1.5  

–

mA  

mA  

mA  

mA  

mA  

V

2

L

D

T

MT (+),

 

G (

–

)  

2

MT (

–

), G (

–

)  

–

2.5  

4.0  

2.2  

1.4  

0.7  

0.4  

0.1  

2

MT (

–

), G (+)  

–

2

Holding Current  

I

H

V =

 

12

V

, I

 

=

0

.1A  

–

D

T

On

–

State Voltage  

Gate Trigger Voltage  

V

I =

 

5A  

T

–

T

V

GT  

V =

 

12

V

, I

 

=

0

.1A  

–

V

D

T

V =

 

400

V

, I

 

=

0

.1A, T

 

= +125

°

C  

0.25  

–

V

D

T

J

Off

–

State Leakage Current  

I

D

V =

 

V  

max, T

 

= +125

°

C  

0.5  

mA  

D

DRM  

J

Dynamic Characteristics  

Critical Rate

–

of

–

Rise of  

Off

–

State Voltage  

dV /dt  

V

= 67% V  

max, T

 

= +125

°

C,  

–

–

50  

2

–

–

V/

µ

s  

µ

s  

D

DM  

DRM  

J

Exponential Waveform, Gate Open  

Gate Controlled Turn

–

On Time  

t

gt  

I

= 6A, V

 

= V  

max, I

 

= 0.1A,  

TM  

D

DRM  

G

dI /dt

 

= 5A/

µ

s  

G

.420 (10.67)  

Max  

.110 (2.79)  

MT  

2

.147 (3.75)  

Dia Max  

.500  

(12.7)  

Max  

.250 (6.35)  

Max  

.500  

(12.7)  

Min  

.070 (1.78) Max  

MT  

Gate  

MT  

1

.100 (2.54)  

2