NTE-ELECTRONICS–INC–NTE5607

NTE5600 thru NTE5607  

TRIAC, 4 Amp  

Description:  

The NTE5600 through NTE5607 TRIACs are designed primarily for full–wave AC control applications  

such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave  

silicon gate controlled solid–state devices are needed.

 

TRIAC type thyristors switch from a blocking  

to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.  

Features:  

D

2 Mode Gate Triggering  

D

Blocking Voltages to 600V  

D

All Diffused and Glass Passivated Junctions for Greater Parameters Uniformity and Stability  

Absolute Maximum Ratings:  

Repetitive Peak Off–State Voltage (T

C

= +110

°

C, Note 1), V

DRM  

NTE5600 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

25V  

NTE5601 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

50V  

NTE5602 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  

NTE5603 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  

NTE5604 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V  

NTE5605 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  

NTE5606 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V  

NTE5607 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  

RMS On–State Current (T

C

= +85

°

C), I

T(RMS)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4A  

Peak Surge Current (One Full Cycle, 60Hz, T

J

= –40

°

to +110

°

C), I

TSM

. . . . . . . . . . . . . . . . . . .

 

30A  

Circuit Fusing (t = 8.3ms), I

2

t .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3.7A

2

s  

Peak Gate Power, P

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

10W  

Average Gate Power, P

G(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

0.5W  

Peak Gate Voltage, V

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

5V  

Operating Junction

T

e

mperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

–40

°

to +110

°

C  

Storage

T

e

mperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40

°

to +150

°

C  

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3.5

°

C/W  

Thermal Resistance, Junction–to–Ambient, R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

°

C/W  

Mounting

T

o

rque (6–32 Screw, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

8 in. lb.  

Note 1.

 

Ratings apply for open gate conditions.

 

Thyristor devices shall not be tested with a constant  

current source for blocking capability such that the voltage applied exceeds the rated block-  

ing voltage.  

Note 2.

 

T

o

rque rating applies with the use of a compression washer.

 

Mounting torque in excess of  

8 in. lb. does not appreciably lower case–to–sink thermal resistance.

 

MT

2

and heatsink con-  

tact pad are common.  

Electrical Characteristics:

 

(T

C

= +25

°

C unless otherwise specified)  

Parameter  

Symbol  

Test Conditions  

Min Typ Max

 

Unit  

I

,

Rated V  

J

or V  

, Gate Open,  

–

–

–

–

–

10  

µ

A  

mA  

V

Peak Forward or Reverse  

Blocking Current  

DRM  

I

DRM  

T =

 

+25

°

C  

RRM  

RRM  

RRM  

Rated V  

J

or V  

, Gate Open,  

–

2

DRM  

T =

 

+110

°

C  

On

–

State Voltage (Either Direction)  

V

V

I

= 6A Peak  

–

2

TM  

TM  

Peak Gate Trigger Voltage  

GT  

MT (+),

 

G (+);

 

MT (

–

), G (

–

)  

Main

T

e

rminal Voltage = 12

V

,  

R =

 

100

Ω

, T

 

=

–

40

°

C  

1.4  

2.5  

V

2

2

MT (+),

 

G (

–

); MT

 

(

–

), G (+)  

2

2

L

J

Peak Gate Trigger Voltage  

MT (+),

 

G (+);

 

MT (

–

), G (

–

)  

V

GT  

Main

T

e

rminal Voltage = Rated V

 

,  

DRM  

L J  

0.2  

–

–

–

–

–

V

2

2

MT (+),

 

G (

–

); MT

 

(

–

), G (+)  

R =

 

10k

Ω

, T

 

= +110

°

C  

2

2

Holding Current (Either Direction)  

I

Main

T

e

rminal Voltage = 12

V

,

G

ate Open,  

70  

30  

mA  

mA  

H

T =

 

–

40

°

C, Initiating Current = 1A  

J

Main

T

e

rminal Voltage = 12

V

,

G

ate Open,  

T =

 

+25

°

C  

J

–

Turn

–

On Time (Either Direction)  

t

I

= 14A, I

 

= 100mA  

–

–

1.5  

5

–

–

µ

s  

on  

TM  

GT  

Blocking Voltage Application  

Rate at Commutation  

dv/dt  

Rated V  

, Gate Open, T

 

= +85

°

C  

V/

µ

s  

DRM  

J

Gate Trigger Current  

Quads I & III  

I

Main

T

e

rminal Voltage = 12

V

,  

R =

 

100

Ω,

T =

 

+25

°

C  

–

–

–

–

30  

60  

mA  

mA  

GT  

L

J

Main

T

e

rminal Voltage = 12

V

,  

R =

 

100

Ω,

T =

 

–

40

°

C  

L

J

.330 (8.38)  

Max  

.175  

(4.45)  

Max  

.450  

(11.4)  

Max  

.118 (3.0)  

Dia  

.655  

(16.6)  

Max  

.030 (.762) Dia  

MT MT  

G

1

2

.090 (2.28)  

.130 (3.3)  

Max