NTE-ELECTRONICS–INC–NTE5611
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NTE5611 thru NTE5618
TRIAC
−
10 Amp
Description:
The NTE5611 through NTE5618 TRIACs are designed primarily for full
−
wave AC control applica-
tions, such as light dimmers, motor controls, heating controls, and power supplies; or wherever full
−
wave silicon gate controlled solid
−
state devices are needed.
TRIAC type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate
triggering.
Features:
D
All Diffused and Passivated Junctions for Greater Parameter Uniformity and Stability
D
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation
and Durability.
D
Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
(Note 1)
Repetitive Peak Off
−
State Voltage (T
J
= +100
°
C, Note 2), V
DRM
NTE5611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V
NTE5612 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
NTE5613 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5615 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5618 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
On
−
State Current RMS (T
C
= +75
°
C), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A
Peak Surge Current (One Full Cycle, 60Hz, T
J
=
−
40
°
to +100
°
C), I
TSM
. . . . . . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (T
J
=
−
40
°
to +100
°
C, t = 1.0 to 8.3ms), I
2
t . . . . . . . . . . . . . . . .
40A
2
s
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A
Operating Junction
T
e
mperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
40
°
to +100
°
C
Storage
T
e
mperature Range,
T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
40
°
to +150
°
C
Mounting
T
o
rque (6
−
32 Screw, Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12in. lb.
Thermal Resistance, Junction
−
to
−
Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
°
C/W
Thermal Resistance, Case
−
to
−
Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
°
C/W
Note 1.
NTE5615
&
NTE5618
are
discontinued
devices and
no longer available
.
Note 2.
Ratings apply for open gate conditions.
Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Note 3.
T
o
rque rating applies with use of torque washer.
Mounting torque in excess of 8 in. lbs. does
not appreciably lower case
−
to
−
sink thermal resistance.
Anode lead and heatsink contact
pad are common.
Note 4.
For soldering purposes (either terminal connection or device mounting), soldering tempera-
tures shall not exceed +230
°
C.
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Min Typ Max
Unit
Peak Blocking Current (Either Direction)
I
DRM
mA
(Rated V
DRM
, T
J
= 100
°
C, Gate Open)
−
−
−
2
On
−
State Voltage (Either Direction)
V
TM
I
GT
V
(I
TM
= 14A Peak)
1.3
1.8
Gate Trigger Current (Continuous DC)
(Main
T
e
rminal Voltage = 12V, R
L
= 100
Ω
)
MT
2
(+), G
(+); MT
2
(
−
), G (
−
)
mA
−
−
−
−
50
75
MT
2
(+), G (
−
); MT
2
(
−
), G (+)
Gate Trigger Voltage (Continuous DC)
(Main
T
e
rminal Voltage = 12V, R
L
= 100
Ω
)
MT
2
(+), G (+); MT
2
(
−
), G (
−
)
V
GT
V
−
−
0.9
1.0
2.0
2.5
MT
2
(+), G (
−
); MT
2
(
−
), G (+)
Gate Trigger Voltage (Continuous DC
−
All Modes)
V
GD
I
H
V
(Main
T
e
rminal Voltage = Rated V
DRM
, R
L
= 100
Ω
, T
J
= +100
°
C)
0.2
−
−
−
−
50
−
Holding Current (Either Direction)
mA
µ
s
(Main
T
e
rminal Voltage = 12Vdc, Gate Open, I
T
= 100mA)
Turn
−
On Time
t
on
(I
TM
= 14A, I
GT
= 100mA)
−
1.5
5
Blocking Voltage Application Rate at Commutation
dv/dt
V/
µ
s
(At V
DRM
, T
J
= +75
°
C, Gate Open)
−
−
.530 (13.4) Max
.143 (3.65) Dia Thru
.668
(17.0)
Max
MT
Gate
1
.655
(16.6)
Max
Heat Sink Contact
Area (Bottom)
MT (Heat
Sink Area)
2
.150 (3.82) Max
.166 (4.23)
