NTE-ELECTRONICS–INC–NTE5652

Part #NTE-ELECTRONICS–INC–NTE5652
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NTE-ELECTRONICS–INC–NTE5652
NTE5650 thru NTE5653  
TRIAC – 100V

RM

, 2.5A  
Description:  
The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and  
MOS devices.
 
These devices features a void–free glass passivated chip and are hermetically sealed  
in TO–5 outline cans.  
The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off–  
state to conduction for either polarity of applied voltage with
 
positive or negative gate–trigger current  
and are designed for control applications in lighting, heating, cooling and static switching relays.  
Absolute Maximum Ratings:  
Repetitive Peak Off–State Voltage (T

J

= +90
°
C, Gate Open, Note 1), V

DROM  

NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  
NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  
NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
RMS On–State Current (T

C

= +75
°
C and Conduction Angle of 360
°
), I

T(RMS)

. . . . . . . . . . . . . . .
 
3A  
Peak Surge (Non–Repetitive) On–State Current (One–Cycleat 50Hz or 60Hz), I

TSM

. . . . . . . .
 
30A  
Peak Gate–Trigger Current (3
µ
sec, Max.), I

GTM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1A  
Peak Gate–Power Dissipation (I

GT

≤
I

GTM

for 3
µ
sec. Max.), P

GM

. . . . . . . . . . . . . . . . . . . . . . . .
 
20W  
Average Gate–Power Dissipation, P

G(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
0.2W  
Operating
T
e
mperature Range (T

C

), T

opr

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
–40
°
to +90
°
C  
Storage
T
e
mperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40
°
to +150
°
C  
Typical Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
°
C/W  
Note 1.
 
All values apply in either direction.  
Electrical Characteristics:
 
(At Maximum Ratings & Specified Case
T
e
mperature)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max
 
Unit  
Peak Off–State Current  
I
T =
 
+90
°
C, V
 
= Max Rating,  
–
–
0.75 mA  
DROM  
J
DROM  
Gate Open, Note 1  
Maximum On–State Voltage  
DC Holding Current  
V
T =
 
+25
°
C, i
 
= 5A (Peak), Note 1  
–
–
–
–
–
3
1.85  
5
V
TM  
C
T
I
T =
 
+25
°
C, Gate Open  
C
mA  
V/
µ
s  
HO  
Critical Rate–of–Rise of Off–State  
Voltage  
Critical T
 
= +90
°
C, v
 
= V  
dv/dt  
, Gate Open,  
–
C
D
DROM  
Note 1  
DC Gate–Trigger Current  
MT (+)
 
Gate (+), MT
 
(–) Gate (–)  
I
GT  
T =
 
+ 25
°
C, v
 
= 6
V
, R
 
=
3
9
Ω  
–
–
3
mA  
2
2
C
D
L
MT (+)
 
Gate (–), MT
 
(–) Gate (+)  
2
2
Note 1.
 
All values apply in either direction.  

Electrical Characteristics (Cont
’
d):
(At Maximum Ratings & Specified Case
T
e
mperature)  
Parameter  
DC Gate Trigger Voltage  
Gate
–
Controlled Turn
–
On Time  
Symbol  
Test Conditions  
T =
 
+25
°
C, v
 
= 6
V
, R
 
=
3
9
Ω  
Min Typ Max
 
Unit  
V
GT  
–
–
–
2.2  
V
C
D
L
t
gt  
T =
 
+25
°
C, v
 
= V
 
, I
 
= 80mA,  
DROM GT  
2.2  
–
µ
s  
C
D
t =
 
0.1
µ
s, i
 
= 10A (Peak)  
r
T
2
2
Fusing Current (For TRIAC Protection)  
I t  
T = 1.25 to 10ms  
–
–
3
A s  
.352 (8.95) Dia Max  
.320 (98.13) Dia Max  
.250 (6.35)  
Max  
1.500 (38.1)  
Min  
.019 (0.5) Dia  
Gate  
MT  
MT  
1
2
45
°  
.031 (.793)  
TO5