NTE-ELECTRONICS–INC–NTE5687

NTE5680 thru NTE5687  

TRIAC, 25 Amp  

Description:  

The NTE5680 thru NTE5687 series of medium power TRIACs are bidirectional triode thyristors which  

may be switched from off–state to conduction for either polarity of applied voltage with positive or neg-  

ative gate triggering.

 

Theses devices are designed for control of AC loads in applications such as  

lighting, heating, and motor speed control, as well as static switching relays.  

Absolute Maximum Ratings:  

Repetitive Peak Off–State and Reverse Voltage (T

J

= +100

°

C), V

DRM

, V

RRM  

NTE5680 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

25V  

NTE5681 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

50V  

NTE5682 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  

NTE5683 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  

NTE5684 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V  

NTE5685 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  

NTE5686 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V  

NTE5687 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  

RMS On–State Current (T

C

= +75

°

C, 360

°

Conduction), I

T(RMS)

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

25A  

Peak Surge (Non–Repetitive) On–State Current (One–Cycle, 50Hz or 60Hz), I

TSM

. . . . . . . . 250A  

Peak Gate–Trigger Current (3

µ

s Max), I

GTM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4A  

Peak Gate–Power Dissipation (I

GT

≤

I

GTM

, 3

µ

s Max), P

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

40W  

Average Gate Power Dissipation, P

G(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

0.8W  

Storage

T

e

mperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40

°

to +150

°

C  

Operating

T

e

mperature Range (T

J

), T

opr

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40

°

to +100

°

C  

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1.8

°

C/W  

Electrical Characteristics:

 

(At Maximum Ratings, T

A

= +25

°

C unless otherwise specified)  

Parameter  

Peak Off

–

State Current  

Symbol  

Test Conditions  

Gate Open, I

 

= 100A (Peak)  

Min Typ Max Unit  

I

–

–

–

–

–

–

4

2.5  

60  

–

mA  

V

DROM  

T

Maximum On

–

State Voltage  

DC Holding Current  

V

T

I =

 

100A (Peak)  

T

I

H

Gate Open  

–

mA  

V/

µ

s  

Critical Rate

–

of

–

Rise of Off

–

State Voltage  

Critical  

dv/dt  

Gate Open, V

 

= Rated V  

C

,

40  

D

DROM  

T =

 

+100

°

C  

Critical Rate

–

of

–

Rise of Commutation  

Commutating Gate

 

Open, V

 

= Rated V  

,

–

3

–

V/

µ

s  

D

DROM  

dv/dt  

I =

 

25A, T

 

= +75

°

C  

T C  

DC Gate Trigger Current  

I

GT  

MT (+),

 

Gate (+); MT

 

(

–

), Gate (

–

)  

V =

 

24

V

, R

 

=

1

2

Ω  

–

–

–

–

100 mA  

150 mA  

2

2

D

L

MT (+),

 

Gate (

–

); MT

 

(

–

), Gate (+)  

2

2

DC Gate Trigger Voltage  

V

V =

 

24

V

, R

 

=

1

2

Ω  

–

–

–

2.5  

V

GT  

D

L

Gate

–

Controlled Turn

–

On Time  

t

gt  

V =

 

Rated V

 

, I

 

= 300mA,  

DROM GT  

3

–

µ

s  

D

t =

 

0.1

µ

s, I

 

= 10A  

r

t

(Peak)  

.562  

(14.28)  

Max  

MT  

Gate  

1

.1.193  

(30.33)  

Max  

.200 (5.08) Max  

.453  

(111.5)  

Max  

MT  

2

1/4

–

28 UNF

–

2A