NTE-ELECTRONICS–INC–NTE5701
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NTE5700 thru NTE5705
Industrial Power Module
Description:
The NTE5700 through NTE5705 series of Integrated Power Circuits consist of power thyristors and
power diodes configured in a single package.
Applications include power supplies, control circuits
and battery chargers.
Features:
D
Glass Passivated Junctions for Greater Reliability
D
Electrically Isolated Base Plate
D
High Dynamic Characteristics
Absolute Maximum Ratings:
Maximum Repetitive Peak Reverse Voltage (V
S
0), V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Maximum Non
−
Repetitive Peak Reverse Voltage, V
RSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Maximum Repetitive Peak Off State Voltage Gate Open Circuit, V
DRM
. . . . . . . . . . . . . . . . . . 1200V
Thermal and Mechanical Characteristics:
Junction Operating
T
e
mperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
40
to +125
C
Storage
T
e
mperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−
40
to +150
C
Maximum Internal Thermal Resistance, One Junction
−
to
−
Case, R
thJC
DC Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.24K/W
Maximum Thermal Resistance, Base
−
to
−
Heatsink, R
thCS
Mounting Surface Smooth and Greased . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.10K/W
Mounting
T
o
rque, Base
−
to
−
Heatsink
10% (Note 1), T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5Nm
Approximate Weight, wt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
58g (2.0oz)
Note 1.
A mounting compound is recommended and the torque should be checked after a period of
about 3 hours to allow for the spread of the compound.
Rev. 4
−
21
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Rating Unit
Forward Conduction
Maximum DC Output Current
I
O
T
C
= +85
C, Full Bridge Circuits
25
12.5
28
A
A
A
(NTE5700, NTE5701, NTE5702)
Maximum Average
On
−
State
I
T(AV)
I
F(AV)
180
Sine Wave Conduction Circuits
(All Types)
and Forward Current
Maximum RMS Current
I
RMS
180
Sine Wave Conduction Circuit
(NTE5702)
10ms
8.3ms
10ms
8.3ms
10ms
8.3ms
10ms
8.3ms
300
315
357
375
450
410
637
580
A
A
Maximum Peak, One
−
Cycle
Non
−
Repetitive On
−
State
or Forward Current
I
TSM
or
100% V
RRM
Sinusoidal Half Wave,
Reapplied
Initial T
J
= T
J
Max
I
FSM
A
No Voltage
Reapplied
A
A
2
s
A
2
s
A
2
s
A
2
s
Maximum I
2
t for Fusing
I
2
t
100% V
RRM
Initial T
J
= T
J
Max
Reapplied
No Voltage
Reapplied
Maximum I
2
t for Fusing
I
2
t
t = 0.1 to 10ms, No Voltage Reapplied, Note 2
6365 A
2
s
Maximum Value of Threshold
Voltage
V
T(TO)
T
J
= +125
C
0.82
V
Maximum Value of On
−
State
r
T
T
J
= +125
C
12
m
Slope Resistance
V
TM
V
FM
di/dt
I
TM
=
x I
T(AV)
I
FM
=
x I
F(AV)
1.35
1.35
200
V
V
Maximum Peak On
−
State
T
J
= +25
C,
or Forward Voltage
180
Condition
Maximum Non
−
Repetitive Rate
T
J
= +125
C, from 0.67V
DRM
, I
TM
=
x I
T(AV)
I
g
= 500mA, t
r
< 0.5
s, t
p
> 6
s
,
A/
s
of Rise of Turned On Circuit
Maximum Holding Current
Maximum Latching Current
I
H
I
L
T
J
= +25
C, Anode Supply = 6
V
,
100
250
mA
mA
Resistive Load, Gate Open Circuit
T
J
= +25
C, Anode Supply = 6
V
,
Resistive Load
Triggering
Maximum Peak Gate Power
Maximum Average Gate Power
Maximum Peak Gate Current
P
GM
P
G(AV)
I
GM
8.0
2.0
2.0
10
W
W
A
Maximum Peak Negative Gate
Voltage
−
V
GM
V
T
J
=
−
40
C
T
J
= +25
C
T
J
= +125
C
3.0
2.0
1.0
V
V
V
Maximum Gate Voltage Required
to Trigger
V
GT
Anode Supply = 6V
Resistive Load
Electrical Characteristics (Cont’d):
Parameter
Symbol
Test Conditions
Rating Unit
Triggering (Cont’d)
T
J
=
−
40
C
T
J
= +25
C
T
J
= +125
C
90
60
35
0.2
mA
mA
mA
V
Maximum Gate Current Required
to Trigger
I
GT
Anode Supply = 6V
Resistive Load
Maximum Gate Voltage that will
not Trigger
V
GD
T
J
= +125
C, Rated V
DRM
Applied
Blocking
Maximum Critical Rate of Rise of
dv/
dt
T
J
= +125
C, Exponential to 0.67V
DRM
,
200 V/
s
Off
−
State Voltage
Gate Open Circuit
I
RM
I
DM
V
INS
50Hz, Circuit to Base, All
T
e
rminals Shorted
10
2.0
mA
mA
V
Maximum Peak Reverse and
Off
−
State Leakage Current
at V
RRM
, V
DRM
T
J
= T
J
Max, Gate Open Circuit
RMS Isolation Voltage
2500
Note 2.
I
2
t for time t
x
= I
2
t
ꢀ
t
x
.
Pin Connection and Schematic Diagrams:
NTE No.
5700
Description
Terminal Positions
Schematic Diagrams
Single Phase,
Hybrid Bridge,
G1
Common Cathode,
Freewheeling Diode
AC1
*
AC1 G1
AC2 G2
(
−
)
AC2
(+)
G2
(
−
)
(
−
)
(
−
)
(+)
5701
5702
Single Phase,
Hybrid Bridge,
Common Anode,
Freewheeling Diode
G1
AC1
AC2
AC1 G1
AC2 G2
(
−
)
*
(+)
G2
(+)
G1
Single Phase,
All SCR Bridge
G3
AC1
AC2
AC2 G2
G1
(
−
)
*
G4
AC1 G3
(+)
G4
G2
(+)
*
For transient protection, a Metal Oxide Varistor (MOV) may be connected externally across terminals AC1 & AC2.
Pin Connection and Schematic Diagrams (Cont’d):
NTE No.
5703
Description
Terminal Positions
Schematic Diagrams
SCR AC Switch
G2
AC1
AC1
AC
G2
G1
AC2
G1
AC1
AC2
*
5704
5705
Hybrid Doubler
AC1
G1
(+)
(
−
)
G1
(+)
(
−
)
SCR Doubler
G1
G2
(+)
G1
G2
(
−
)
(+)
(
−
)
AC1
*
For transient protection, a Metal Oxide Varistor (MOV) may be connected externally across terminals AC1 & AC2.
1.250
(31.75)
1.000
(25.4)
C
L
Mounting
Hole/Slot
.210 (5.2) Dia.
1.910 (48.5)
2.500 (63.5)
.500 (12.7)
.250 (6.3)
T
e
rminals
1.060
(26.9)
.550
(14.0)
.100 (2.54)
NOTE:
Can be used with Heat Sink NTE441A
