NXP-Semicon-A3G26H350W17SR3
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Document Number: A3G26H350W17S
Rev. 1, 01/2021
NXP Semiconductors
T
e
chnical Data
RF Power GaN Transistor
This 59 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 2496 to 2690 MHz.
A3G26H350W17S
This part is characterized and performance is guaranteed for applications
operating in the 2496 to 2690 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
2496–2690 MHz, 59 W Avg., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
2600 MHz
Typical Doherty Single
–
–
Carrier W
–
–
CDMA Performance: V
DD
= 48 Vdc,
DQA
= 250 mA, V
GSB
=
–
5
.5 Vdc, P
out
= 59 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCD
F
.
I
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
2496 MHz
2590 MHz
2690 MHz
(dB)
13.3
13.5
13.3
(%)
49.9
48.5
48.5
8.9
9.1
8.9
–33.2
–37.2
–34.5
NI
–
-780S
–
-4S2S
Features
6
5
VBW
A
High terminal impedances for optimal broadband performance
Advanced high performance in
–
–
package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating
conditions
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
VBW
B
(
T
o
p View)
Figure 1. Pin Connections
2020–2021 NXP B.
V
.
Table 1. Maximum Ratings
Rating
Symbol
Value
125
Unit
Vdc
Vdc
Vdc
mA
C
Drain
–
–
Source Voltage
V
DSS
Gate
–
–
Source Voltage
V
–8, 0
GS
DD
Operating Voltage
V
55
Maximum Forward Gate Current, I
Storage
T
e
mperature Range
, @ T
= 25
C
G (A+B)
I
GMAX
58
C
T
stg
–
6
5 to +150
–
5
5 to +150
225
Case Operating
T
e
mperature Range
Maximum Channel
T
e
mperature
T
C
C
T
CH
C
Table 2. Recommended Operating Conditions
Rating
Symbol
Value
Unit
Operating Voltage
V
48
Vdc
DD
Table 3. Thermal Characteristics
Characteristic
Symbol
(IR)
Value
Unit
(1)
Thermal Resistance by Infrared Measurement, Active Die Surface
–
–
to
–
–
Case
R
0.70
C/W
JC
Case
T
e
mperature 84
C, P
= 73 W
D
(2)
Thermal Resistance by Finite Element Analysis, Channel
–
–
to
–
–
Case
R
CHC
1.10
C/W
Case
T
e
mperature 90
C, P
= 73 W
(FEA)
D
Table 4. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JS
–
–
001
–
–
2017)
Charge Device Model (per JS
–
–
002
–
–
2014)
C3
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(3)
Off Characteristics
Drain
–
–
Source Breakdown Voltage
(V =
–8 Vdc, I
= 16.2 mAdc)
V
—
—
Vdc
(BR)DSS
Carrier
Peaking
150
150
GS
D
(V =
–8 Vdc, I
= 42 mAdc)
GS
D
On Characteristics — Side A, Carrier
Gate Threshold Voltage
V
–
3
.8
–
3
.2
–
8
.1
–
2
.7
–
2
.7
—
–
2
.0
–
2
.2
—
Vdc
Vdc
GS(th)
(V =
10 Vdc, I
= 16.2 mAdc)
DS
D
Gate Quiescent Voltage
(V =
48 Vdc, I
= 250 mAdc, Measured in Functional
T
e
st)
V
GSA(Q)
DD
DA
Gate
–
–
Source Leakage Current
(V =
150 Vdc, V
= –8 Vdc)
I
mAdc
GSS
DS
GS
On Characteristics — Side B, Peaking
Gate Threshold Voltage
V
–
3
.8
–
3
.1
—
–
2
.0
—
Vdc
GS(th)
(V =
10 Vdc, I
= 42 mAdc)
DS
D
Gate
–
–
Source Leakage Current
(V =
150 Vdc, V
= –8 Vdc)
I
–
9
.99
mAdc
GSS
DS
GS
1. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
2. R
(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated
CHC
[A + B/(T + 273)]
by the expression MTTF (hours) = 10
, where
T
is the channel temperature in degrees Celsius,
A
= –11.1 and
B
= 8366.
3. Each
side of device measured separately.
(continued)
A3G26H350W17S
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In NXP Doherty Production
T
e
st Fixture, 50 ohm system) V
= 48 Vdc, I
= 250 mA, V
=
–
5
.5 Vdc,
GSB
DD
DQA
P
= 59 W Avg., f = 2690 MHz, Single
–
–
Carrier W
–
–
CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCD
F
.
out
ACPR measured in 3.84 MHz Channel Bandwidth @
5 MHz Offset.
[See note on correct biasing sequence.]
Power Gain
G
12.0
42.7
13.3
48.5
15.0
—
dB
%
ps
D
Drain Efficiency
P
, Pulsed CW
P
55.7
56.6
—
dBm
dBc
sat
sat
Adjacent Channel Power Ratio
ACPR
—
–34.5
–27.5
Wideband Ruggedness
(In NXP Doherty Production
T
e
st Fixture, 50 ohm system) I
= 250 mA, V
= –5.5 Vdc, f = 2590 MHz, Additive
GSB
DQA
White Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 400 MHz at 55 Vdc, 125 W Avg. Modulated Output Power
(3 dB Input Overdrive from 59 W Avg. Modulated Output Power)
No Device Degradation
Typical Performance
(In NXP Doherty Production
T
e
st Fixture, 50 ohm system) V
= 48 Vdc, I
= 250 mA, V
=
–
5
.5 Vdc,
GSB
DD
DQA
2496–2690 MHz Bandwidth
(2)
P
@ 3 dB Compression Point
P3dB
—
—
420
–9
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496–2690 MHz bandwidth)
VBW Resonance Point
VBW
—
220
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 194 MHz Bandwidth @ P
= 59 W Avg.
G
—
—
0.2
—
—
dB
out
F
Gain Variation over
T
e
mperature
G
0.013
dB/
C
(–40
C to +85
C)
Output Power Variation over
T
e
mperature
P1dB
—
0.006
—
dB/
C
(–40
C to +85
C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
NI
–
–
780S
–
–
4S2S
A3G26H350W17SR3
R3 Suffix = 250 Units, 44 mm
T
a
pe Width, 13
–
–
inch Reel
1. Part
internally input matched.
2. P3dB
= P
+ 7.0 dB where P
is the average output power measured using an unclipped W
–
–
CDMA single
–
–
carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCD
F
.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors in a Doherty Configuration
Bias ON the device
1. Set
gate voltage V
and V
to –5 V.
GSB
GSA
2. Set
drain voltage V
and V
to nominal supply voltage (+48 V).
DSB
DSA
3. Increase
V
4. Increase
V
(carrier side) until I
current is attained.
DQA
GSA
GSB
(peaking side) to target bias voltage.
5. Apply
RF input power to desired level.
Bias OFF the device
1. Disable
RF input power.
2. Adjust
gate voltage V
and V
to –5 V.
GSB
GSA
3. Adjust
drain voltage V
and V
to 0 V. Allow adequate time
DSB
DSA
for drain voltage to reduce to 0 V from external drain capacitors.
4. Disable
V and
V
.
GSB
GSA
A3G26H350W17S
RF Device Data
NXP Semiconductors
3
V
GGA
V
DDA
R1
C10
C
ꢀ
11
R2
C2
C13
C12
C1
C4
A3G26H350W17S
Rev. 3
R3
C14
C5
C3
C6
C20
C15
Z1
C7
cut out
area
R4
C16
R5
C8
C17
C9
D131318
R6
C18
R7
C19
V
GGB
V
DDB
aaa
–
-038550
Figure 2. A3G26H350W17S Production Test Circuit Component Layout
Table 7. A3G26H350W17S Production Test Circuit Component Designations and Values
Part
Description
10
F Chip Capacitor
Part Number
Manufacturer
C1, C9, C11, C12, C16, C18
C5750X7S2A106M
600F8R2BT250XT
600F1R0BT250XT
600F0R5BT250XT
600F0R9BT250XT
MCGPR100V227M16X26
600F3R0BT250XT
600F5R1BT250XT
600F0R2BT250XT
CRCW120615K0FKEA
CRCW12063R00JNEA
CRCW12061R00FKEA
C10A50Z4
TDK
C2, C5, C7, C8, C13, C17
8.2 pF Chip Capacitor
ATC
C3
1 pF Chip Capacitor
ATC
C4
0.5 pF Chip Capacitor
ATC
C6
0.9 pF Chip Capacitor
ATC
C10, C19
C14
220
F
,
1
00 V Electrolytic Capacitor
3.0 pF Chip Capacitor
Multicomp
ATC
C15
5.1 pF Chip Capacitor
ATC
C20
0.2 pF Chip Capacitor
ATC
R1, R7
R2, R6
R3, R5
R4
15 k
, 1/4 W Chip Resistor
3
, 1/4 W Chip Resistor
1
, 1/4 W Chip Resistor
50
, 10 W
T
e
rmination Chip Resistor
2300–2900 MHz Band, 90
, 3 dB Hybrid Coupler
Vishay
Vishay
Vishay
Anaren
Anaren
MTL
Z1
X3C26P1-03
PCB
Rogers RO4350B, 0.020
,
= 3.66
D131318
r
A3G26H350W17S
RF Device Data
NXP Semiconductors
4
PACKAGE INFORMATION
A3G26H350W17S
RF Device Data
NXP Semiconductors
5
A3G26H350W17S
RF Device Data
NXP Semiconductors
6
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Nov. 2020
Jan. 2021
Initial release of data sheet
T
a
ble 1, Maximum Ratings: updated operating voltage for complete data sheet standardization, p. 2
T
a
ble 2, Recommended Operating Conditions: added to data sheet, p. 2
A3G26H350W17S
RF Device Data
NXP Semiconductors
7
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us:
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address:
nxp.com/Sales
T
e
rmsandConditions
.
NX
P
,
t
he NXP logo and Airfast are trademarks of NXP B.
V
.
A
ll other product or service
names are the property of their respective owners.
E
2020–2021 NXP B.
V
.
Document Number: A3G26H350W17S
Rev. 1, 01/2021
