NXP-Semicon-A3T09S100NR1
| Part # | NXP-Semicon-A3T09S100NR1 |
Download  | NXP-Semicon-A3T09S100NR1 |
A3T09S100N
Airfast RF Power LDMOS Transistor
Rev. 0 — March 2021
Data Sheet:
T
e
chnical Data
Designed for two
–
–
way radio applications with frequencies from 136 to
941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large
–
–
signal, common
–
–
source amplifier applications in
radio equipment.
A3T09S100N
Typical Single
–
-Carrier W–CDMA Production Fixture Performance:
V
= 28 Vdc, I
= 450 mA, P
= 15 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
DD
DQ out
136–941 MHz, 100 W CW, 32 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Probability on CCDF
Frequency
(MHz)
G
(dB)
(%)
Avg. P
(W)
ps
D
out
880
22.8
33.8
15
Typical Reference Circuit Performance:
V =
28 Vdc, I
= 450 mA,
DD
DQ
P
in
= 0.125 W, CW
Frequency
G
D
P
out
ps
(MHz)
(dB)
(%)
(W)
T O
–
– 2 7 0
–
– 2
PLASTIC
136
28.5
64.0
90
Load Mismatch/Ruggedness
Frequency Signal
P
Test
in
(MHz)
Type
VSWR
(W)
Voltage
Result
880
CW
> 10:1
at all Phase
Angles
1.3
32
No Device
Degradation
2
1
Drain
Gate
136
CW
> 5:1
at all Phase
Angles
0.2
32
No Device
Degradation
Features
(
T
o
p View)
Characterized for operation from 136 to 941 MHz
Unmatched input and output allowing wide frequency range utilization
Integrated ESD protection
Wideband — full power across each mobile radio band
Exceptional thermal performance
High linearity for: TETRA, SSB, LTE
Note: The
backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Typical Applications
Output stage for VH
F
,
U
HF and 900 MHz 28 V base stations
Output stage for VH
F
,
U
HF and 900 MHz high performance mobile radios
NXP reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain
–
–
Source Voltage
V
–0.5, +65
–6.0, +10
32, +0
DSS
Gate
–
–
Source Voltage
V
GS
DD
Operating Voltage
V
Storage
T
e
mperature Range
Case Operating
T
e
mperature Range
T
stg
–65 to +150
–40 to +150
–40 to 225
T
C
C
(1,2)
Operating Junction
T
e
mperature Range
T
J
C
T
o
tal Device Dissipation @ T
= 25
C
P
222
W
C
D
Derate above 25
C
1.11
W/
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case
T
e
mperature 80.5
C, 14 W Avg., W–CDMA, 28 Vdc, I
880 MHz
R
0.90
C/W
JC
= 450 mA,
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS
–
–
001
–
–
2017)
Charge Device Model (per JS
–
–
002
–
–
2014)
Class 1C, passes 1500 V
Class C3, passes 1000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020
3
260
C
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
32 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
I
1
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 100
Adc)
V
V
1.0
2.3
—
1.8
2.6
3.0
2.9
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 450 mAdc, Measured in Functional
T
e
st)
DD
D
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 100 mAdc)
V
0.02
6.2
GS
D
Forward Transconductance
(V =
10 Vdc, I
= 7.5 Adc)
g
—
—
fs
DS
D
1. Continuous
use at maximum temperature will affect MTT
F
.
3. Refer
to AN1955
, Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
(continued)
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
2 / 20
NXP Semiconductors
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
C
—
—
—
1.4
—
—
—
pF
pF
pF
rss
(V =
28 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
GS
Output Capacitance
(V =
28 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
oss
30.9
68.3
GS
Input Capacitance
C
iss
(V =
28 Vdc, V
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests
(In NXP Production
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 450 mA, P
= 15 W Avg., f = 880 MHz,
DD
DQ
out
Single
–
–
Carrier W
–
–
CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCD
F
.
A
CPR measured in 3.84 MHz
Channel Bandwidth @
5 MHz Offset.
Power Gain
G
22.0
32.4
—
22.8
33.8
–38.0
–19
25.0
—
dB
%
ps
D
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
–33.0
–9
dBc
dB
—
Load Mismatch/Ruggedness — 880 MHz
(In NXP Production
T
e
st Fixture, 50 ohm system) I
= 450 mA
DQ
Frequency
(MHz)
Signal
Type
P
in
(W)
VSWR
Test Voltage, V
Result
No Device
DD
DD
880
CW
> 10:1
at all Phase Angles
1.3
32
(3 dB Overdrive)
Degradation
Load Mismatch/Ruggedness — 136 MHz
(In NXP Reference Circuit, 50 ohm system) I
= 450 mA
DQ
Frequency
(MHz)
Signal
Type
P
in
(W)
VSWR
Test Voltage, V
Result
136
CW
> 5:1
0.2
32
No Device
at all Phase Angles
(3 dB Overdrive)
Degradation
Table 6. Ordering Information
Device
Tape and Reel Information
Package
A3T09S100NR1
R1 Suffix = 500 Units, 24 mm
T
a
pe Width, 13
–
–
inch Reel
TO
–
–
270
–
–
2
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
3 / 20
NXP Semiconductors
Typical Characteristics
200
100
C
C
iss
oss
10
1
C
rss
Measured with
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc
GS
0.1
0
10
20
30
40
V
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
DS
Figure 2. Capacitance versus Drain
–
-Source Voltage
9
T =
25
C
A
8
7
V
= 4.0 Vdc
GS
3.75 Vdc
3.5 Vdc
3.25 Vdc
3.0 Vdc
6
5
4
3
2
1
2.75 Vdc
2.5 Vdc
0
0
5
10
15
20
25
30
35
V
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
DS
Figure 3. Drain Current Versus Drain
–
-Source Voltage
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
4 / 20
NXP Semiconductors
Typical Characteristics (cont.)
9
10
V
= 28 Vdc
DD
I
D
= 1.5 Amps
6 Amps
8
7
6
5
10
10
10
10
7 Amps
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
C)
J
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature — CW
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
5 / 20
NXP Semiconductors
880 MHz Production Fixture — 3
5
(7.6 cm
12.7 cm)
C19
C7
R2
B1
R1
V
R3
R4
V
GG
DD
B2
L2
C16
C8
C18
C17
C9
C15
C
ꢀ
11
C6
C5
L1
cut
out
area
C1
C14
C12
C10
C3
C13
C2
C4
A3T09S100N
Rev. 0
D134641
aaa–040962
Figure 5. A3T09S100N Production Fixture Component Layout — 880 MHz
Table 7. A3T09S100N Production Fixture Component Designations and Values — 880 MHz
Part
Description
Part Number
Manufacturer
Fair-Rite
B1
B2
Short RF Bead
Long RF Bead
2743019447
2743021447
Fair-Rite
ATC
C1, C8, C14, C15
47 pF Chip Capacitor
100B470JT500XT
27291SL
C2, C4, C13
C3
0.8–8.0 pF Variable Capacitor, Gigatrim
3.0 pF Chip Capacitor
Johanson
ATC
100B3R0JT500XT
100B150JT500XT
T491D106035AT
MCGPR50V107M8X11
100B120JT500XT
100B4R3JT500XT
C1825C564J5RACTU
MCGPR63V477M13X26
A04TJLC
C5, C6
C7, C16, C17
C9
15 pF Chip Capacitor
ATC
10
F
,
3
5 V
T
a
ntalum Capacitor
100
F
,
5
0 V Electrolytic Capacitor
12 pF Chip Capacitor
Kemet
Multicomp
ATC
C10, C11
C12
4.3 pF Chip Capacitor
ATC
C18
0.56
F Chip Capacitor
Kemet
Multicomp
Coilcraft
Vishay
Vishay
Vishay
Vishay
MTL
C19
470
F
,
6
3 V Electrolytic Capacitor
12.5 nH Inductor
L1, L2
R1
1 k
, 1/4 W Chip Resistor
560 k
, 1/4 W Chip Resistor
12
, 1/4 W Chip Resistor
27
, 1/4 W Chip Resistor
CRCW12061001FKEA
CRCW12065600FKEA
CRCW120612R0FKEA
CRCW120627R0FKEA
D134641
R2
R3
R4
PCB
T
a
conic RF35, 0.030”,
= 3.5, 1 oz. Copper
r
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
6 / 20
NXP Semiconductors
Typical Characteristics — 880 MHz Production Test Fixture
24.5
24
45
40
35
V
DQ
= 28 Vdc, P
=
15
W (Avg.)
out
DD
I
= 450 mA, Single
–
–
Carrier W
–
–
CDMA
23.5
23
D
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
30
25
@ 0.01% Probability on CCDF
22.5
22
G
ps
0
— 1
— 2 7
— 2 9
— 3 1
— 3 3
— 3 5
— 3 7
— 5
— 1 . 5
— 2
21.5
21
PARC
— 1 0
— 1 5
— 2 0
— 2 5
— 2 . 5
— 3
20.5
20
IRL
900
ACPR
— 3 . 5
19.5
820
840
860
880
920
940
960
980
f, FREQUENCY (MHz)
Figure 6. Single
–
-Carrier Output Peak
–
-to
–
-Average Ratio Compression (PARC) Broadband Performance
@ P
out
= 15 Watts Avg.
0
V
= 28 Vdc, P
= 64 W (PEP)
out
DD
I
= 450 mA, Two
–
–
T
one Measurements
DQ
— 1 5
— 3 0
— 4 5
— 6 0
— 7 5
(f1 + f2)/2 = Center Frequency of 880 MHz
IM3
–
–
U
IM3
–
–
L
IM5
–
–
U
IM5
–
–
L
IM7
–
–
L
IM7
–
–
U
0.1
1
10
50
TWO
–
–
TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products versus Two
–
-Tone Spacing
60
23
1
0
— 1 5
— 2 0
V
= 28 Vdc, I
= 450 mA, f = 880 MHz, Single
–
–
Carrier W
–
–
CDMA
DQ
DD
50
22.9
D
–1 dB = 10.5 W
40
30
20
10
0
— 1
— 2
— 2 5
— 3 0
22.8
22.7
–2 dB = 15.2 W
G
ps
–3 dB = 20.8 W
— 3 5
— 4 0
— 4 5
— 3
— 4
— 5
22.6
22.5
ACPR
PARC
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
22.4
5
10
15
20
25
30
P
, OUTPUT POWER (WATTS)
out
Figure 8. Output Peak
–
-to
–
-Average Ratio Compression (PARC) versus Output Power
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
7 / 20
NXP Semiconductors
Typical Characteristics — 880 MHz Production Test Fixture (cont.)
10
27
25
23
21
19
75
60
45
V
= 28 Vdc, I
= 450 mA
DQ
DD
910 MHz
880 MHz
Single
–
–
Carrier W
–
–
CDMA
3.84 MHz Channel Bandwidth
0
D
G
850 MHz
850 MHz
ps
880 MHz
910 MHz
— 1 0
— 2 0
— 3 0
— 4 0
— 5 0
30
15
0
910 MHz
ACPR
850 MHz
880 MHz
17
15
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
10
–15
100
1
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 9. Single
–
-Carrier W
–
-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
24
23.5
23
75
70
65
V
= 28 Vdc, I
= 450 mA
DQ
25
_
C
DD
T
= –40
_
C
C
f = 880 MHz, CW
85
_
C
G
ps
22.5
22
60
55
50
–40
_
C
21.5
21
45
40
35
25
_
C
20.5
20
85
_
C
D
19.5
19
30
25
120
0
20
40
60
80
100
P
, OUTPUT POWER (WATTS)
out
Figure 10. Power Gain and Drain Efficiency versus CW Output Power over Temperature
24
22
5
0
Gain
20
18
16
14
12
–5
— 1 0
— 1 5
— 2 0
— 2 5
V
P
= 28 Vdc
= 0 dBm
= 450 mA
DD
in
IRL
900
I
DQ
700 750
800
850
950
1000 1050
1100
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
8 / 20
NXP Semiconductors
850–910 MHz Production Fixture
f
Z
Z
load
source
(MHz)
850
880
910
0.56 + j0.44
0.62 + j0.77
0.73 + j1.21
2.23 + j0.56
2.23 + j0.83
2.20 + j1.09
Z
Z
=
=
T
e
st circuit impedance as measured from
gate to ground.
source
T
e
st circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50
50
Z
Z
load
source
Figure 12. Series Equivalent Source and Load Impedance – 850–910 MHz
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
9 / 20
NXP Semiconductors
136 MHz Reference Circuit — 3
5
(7.6 cm
12.7 cm)
Table 8. 136 MHz Performance
(In NXP Reference Circuit, 50 ohm system)
V
= 28 Vdc, I
= 450 mA, P
= 0.125 W, CW
DD
DQ in
Frequency
(MHz)
G
(dB)
(%)
P
out
(W)
ps
D
136
28.5
64.0
90
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
10 / 20
NXP Semiconductors
136 MHz Reference Circuit — 3
5
(7.6 cm
12.7 cm)
V
V
DD
GG
B1
C28
C14
C26
C25
C16
C17
R1
C27
C29
C15
C18
C30
C32
C24
C12
C13
C23*
C19*
R2
R3
C22*
C21*
L2
C31
L3
C2
C1
cut
out
C7
C6
L1
L4
area
C
ꢀ
11
C10
C3 C4
C20*
C5
C8
C9
A3T09S100N Rev. 0
D147587
aaa–040963
*C19, C20, C21, C22 and C23 are mounted vertically.
Figure 13. A3T09S100N Reference Circuit Component Layout — 136 MHz
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
11 / 20
NXP Semiconductors
136 MHz Reference Circuit — 3
5
(7.6 cm
12.7 cm) (cont.)
Table 9. A3T09S100N Reference Circuit Component Designations and Values — 136 MHz
Part
Description
Part Number
Manufacturer
TDK
B1
30
, 6 A Ferrite Bead
MPZ2012S300A
C1
18 pF Chip Capacitor
36 pF Chip Capacitor
24 pF Chip Capacitor
2.0 pF Chip Capacitor
8.2 pF Chip Capacitor
1.5 pF Chip Capacitor
100 pF Chip Capacitor
30 pF Chip Capacitor
1.0 pF Chip Capacitor
510 pF Chip Capacitor
1000 pF Chip Capacitor
10 nF Chip Capacitor
0.1
F Chip Capacitor
22
F
,
2
5 V
T
a
ntalum Capacitor
51 pF Chip Capacitor
15 pF Chip Capacitor
10
F
,
1
00 V Electrolytic Capacitor
330
F
,
6
3 V Electrolytic Capacitor
10 pF Chip Capacitor
15 pF Chip Capacitor
27 nH Inductor
600F180JT250XT
600F360JT250XT
600F240JT250XT
600F2R0BT250XT
600F8R2BT250XT
600F1R5BT250XT
600F101JT250XT
600F300JT250XT
600F1R0BT250XT
100B511JT500XT
100B102JT50XT
ATC
C2, C20, C22
C3
ATC
ATC
C4, C9
C5, C6, C7
C8, C12
C10
ATC
ATC
ATC
ATC
C11
ATC
C13
ATC
C14, C25
ATC
C15, C21, C26
C16, C27
C17, C28
C18
ATC
C1210C103J5GACTU
C1206C104K1RACTU
TPSD226M025R0200
800B510GT500XT
800B150JT500XT
C5750X7S2A106M230KB
MCRH63V337M13X21
100B100JT500XT
600F150JT250XT
1812SMS-27NJLC
1812SMS-68NJLC
1812SMS-82NJLC
A04TJLC
Kemet
Kemet
AVX
C19, C23
C24
ATC
ATC
C29
TDK
C30
Multicomp
ATC
C31
C32
ATC
L1
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Susumu
Vishay
MTL
L2
68 nH Inductor
L3
82 nH Inductor
L4
12.5 nH Inductor
R1
12
, 1/10 W Chip Resistor
43
, 1/4 W Chip Resistor
RR1220Q-120-D
R2, R3
PCB
CRCW120643R0FKEA
D147587
Rogers RO4350B, 0.030
,
= 3.66, 1 oz.
r
Copper
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
12 / 20
NXP Semiconductors
Typical Characteristics — 136 MHz Reference Circuit
120
20
V
= 28 Vdc, f = 136 MHz, CW
DD
100
80
60
40
20
0
V
= 28 Vdc
DD
f = 136 MHz, CW
P
= 0.125 W
in
15
10
5
P
= 0.125 W
in
P
= 0.0625 W
in
P
= 0.0625 W
in
0
Detail A
2
0
0.25
0.5
0.75
1
1.25
1.5
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
0
0.5
1
1.5
2.5
3
3.5
Detail A
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
Figure 14. Output Power versus Gate
–
-Source Voltage
31
75
65
D
30.5
30
55
45
29.5
29
35
25
G
ps
28.5
28
27.5
27
26.5
26
120
100
80
60
40
20
0
0.25
P
out
25.5
25
V
= 28 Vdc, I
= 450 mA, f = 136 MHz, CW
DQ
DD
0
0.05
0.1
0.15
0.2
P ,
INPUT POWER (WATTS)
in
Figure 15. Power Gain, Output Power and Drain Efficiency versus Input Power
80
31
–40
_
C
D
30.5
30
60
40
20
0
85
_
C
T
= –40
_
C
25
_
C
C
25
_
C
85
_
C
29.5
29
G
ps
28.5
125
100
75
50
25
0
28
27.5
27
P
out
–40
_
C
25
_
C
85
_
C
26.5
26
V
= 28 Vdc, I
= 450 mA, f = 136 MHz, CW
DD
DQ
0
0.05
0.1
0.15
0.2
0.25
P ,
INPUT POWER (WATTS)
in
Figure 16. Power Gain, Output Power and Drain Efficiency versus Input Power over Temperature
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
13 / 20
NXP Semiconductors
136 MHz Reference Circuit
f
Z
Z
load
source
(MHz)
136
7.22 + j13.0
3.87 + j0.32
Z
Z
=
T
e
st circuit impedance as measured from
gate to ground.
source
=
T
e
st circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50
50
Z
Z
load
source
Figure 17. Series Equivalent Source and Load Impedance – 136 MHz
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
14 / 20
NXP Semiconductors
A3T09S100
AWLYWWZ
Figure 18. Product Marking
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
15 / 20
NXP Semiconductors
Package Information
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
16 / 20
NXP Semiconductors
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
17 / 20
NXP Semiconductors
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
18 / 20
NXP Semiconductors
Product Documentation, Software and Tools
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
Revision History
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2021
Initial release of data sheet
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet:
T
e
chnical Data
19 / 20
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address:
nxp.com/Sales
T
e
rmsandConditions
.
NX
P
,
t
he NXP logo, Freescale, the Freescale logo and Airfast are trademarks of
NXP B.
V
.
A
ll other product or service names are the property of their respective owners.
E
NXP B.
V
.
2
021
All rights reserved.
Date of release: March 2021
Document identifier: A3T09S100N
