NXP-Semicon-A5G26S004NT6
| Part # | NXP-Semicon-A5G26S004NT6 |
Download  | NXP-Semicon-A5G26S004NT6 |
A5G26S004N
Airfast RF Power GaN Transistor
Rev. 2 — January 2022
Data Sheet:
T
e
chnical Data
This 24 dBm RF power GaN transistor is designed for cellular base station
applications covering the frequency range of 2496 to 2690 MHz.
2600 MHz
A5G26S004N
Typical Single- Carrier W- CDMA Reference Circuit Performance:
V
DD
= 48 Vdc, I
DQ
= 10 mA, P
out
= 24 dBm Avg., Input Signal PAR =
9.9 dB @ 0.01% Probability on CCD
F
.
(1)
2496–2690 MHz, 24 dBm Avg., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
2515 MHz
2595 MHz
2675 MHz
(dB)
18.7
19.6
18.9
(%)
18.8
20.5
20.6
10.2
9.8
–39.6
–42.0
–44.7
9.7
1. All
data measured in reference circuit with device soldered to printed circuit board.
Features
High terminal impedances for optimal broadband performance
Designed for low complexity analog or digital linearization systems
Universal broadband driver
Optimized for massive MIMO active antenna systems for 5G base stations
DFN 4.5
4
PLASTIC
N.C.
1
2
3
6
5
4
N.C.
V
V
DS
GS
N.C.
N.C.
(
T
o
p View)
Note: Exposed
backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
NXP reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Symbol
Value
125
Unit
Vdc
Vdc
Vdc
mA
C
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
V
DSS
V
–8, 0
GS
DD
V
55
Maximum Forward Gate Current @ T
= 25
C
I
0.74
C
GMAX
Storage
T
e
mperature Range
T
stg
–
6
5 to +150
–
5
5 to +150
225
Case Operating
T
e
mperature Range
Maximum Channel
T
e
mperature
T
C
C
T
C
CH
Table 2. Recommended Operating Conditions
Rating
Symbol
Value
Unit
Operating Voltage
V
48
Vdc
DD
Table 3. Thermal Characteristics
Characteristic
Symbol
(IR)
Value
Unit
(1)
Thermal Resistance by Infrared Measurement, Active Die Surface- to- Case
R
9.5
C/W
JC
Case
T
e
mperature 115
C, P
= 1.1 W
D
(2)
Thermal Resistance by Finite Element Analysis, Channel- to- Case
R
32
C/W
CHC
Case
T
e
mperature 115
C, P
= 1.1 W
(FEA)
D
Table 4. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JS- 001- 2017)
Charge Device Model (per JS- 002- 2014)
C3
Table 5. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22- A113, IPC/JEDEC J- STD- 020
3
260
C
Table 6. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Off- State Drain Leakage
I
—
—
0.74
mAdc
D(BR)
(V =
150 Vdc, V
= –8 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 0.74 mAdc)
V
V
–4.9
–2.9
–2.6
–2.5
—
–1.9
–2.0
—
Vdc
Vdc
GS(th)
DS
D
Gate Quiescent Voltage
(V =
48 Vdc, I
= 10 mAdc, Measured in Functional
T
e
st)
GS(Q)
DD
D
Gate- Source Leakage Current
(V =
150 Vdc, V
= –12 Vdc)
I
–0.74
mAdc
GSS
DS
GS
1. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
2. R
(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated
CHC
[A + B/(T + 273)]
by the expression MTTF (hours) = 10
, where
T
is the channel temperature in degrees Celsius,
A
= –11.1 and
B
= 8366.
(continued)
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
2 / 13
NXP Semiconductors
Table 6. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In NXP Production
T
e
st Fixture, 50 ohm system) V
= 48 Vdc, I
= 10 mA, P
= 24 dBm Avg., f = 2690
MHz,
DD
DQ
out
1- tone CW.
Power Gain
G
18.0
20.0
35.0
20.9
22.4
37.4
24.0
—
dB
%
ps
Drain Efficiency
D
P
@ 6 dB Compression Point
P6dB
—
dBm
out
(2)
Wideband Ruggedness
(In NXP Reference Circuit, 50 ohm system) I
= 10 mA, f = 2595 MHz, Additive White Gaussian Noise (AWGN)
DQ
with 10 dB PAR
ISBW of 400 MHz at 55 Vdc, 0.64 W Avg. Modulated Output Power
(3 dB Input Overdrive from 0.3 W Avg. Modulated Output Power)
No Device Degradation
(2)
Typical Performance
(In NXP Reference Circuit, 50 ohm system) V
= 48 Vdc, I
= 10 mA, 2515–2675 MHz Bandwidth
DD DQ
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
250
—
MHz
dB
res
Gain Flatness in 160 MHz Bandwidth @ P
= 24 dBm Avg.
out
G
F
—
0.9
—
Fast CW, 27 ms Sweep
P
@ 6 dB Compression Point
P6dB
—
—
4.0
—
—
W
out
AM/PM
(Maximum value measured at the P6dB compression point across
–16
the 2515–2675 MHz bandwidth)
Gain Variation over
T
e
mperature
(–40
C to +85
C)
G
—
—
0.012
0.002
—
—
dB/
C
dB/
C
Output Power Variation over
T
e
mperature
P6dB
(–40
C to +85
C)
Table 7. Ordering Information
Device
Tape and Reel Information
T6 Suffix = 5,000 Units, 12 mm
T
a
pe Width, 13- inch Reel
Package
A5G26S004NT6
DFN 4.5
4
1. Part
internally input matched.
2. All
data measured in reference circuit with device soldered to printed circuit board.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set
V to
the pinch- off voltage, typically –5
V
.
GS
2. Turn
on V
to nominal supply voltage (+48 V).
DS
3. Increase
V until
I current
is attained.
GS
DS
4. Apply
RF input power to desired level.
Turning the device OFF
1. Turn
RF power off.
2. Reduce
V down
to the pinch- off voltage, typically –5
V
.
GS
3. Adjust
drain voltage V
to 0 V. Allow adequate time for drain voltage
DS
to reduce to 0 V from external drain capacitors.
4. Turn
off V
.
GS
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
3 / 13
NXP Semiconductors
R1
V
DD
V
GG
C2
C1
L2
C4
L1
C3
C5
C6
Q1
L3
C7
C8
L4
A5G26S004N
Rev. 3
D126859
aaa-039741
Note: All
data measured in reference circuit with device soldered to printed circuit board.
Figure 2. A5G26S004N Reference Circuit Component Layout
Table 8. A5G26S004N Reference Circuit Component Designations and Values
Part
Description
2.2
F Chip Capacitor
Part Number
Manufacturer
C1, C2
GRM32ER72A225KA35L
Murata
C3, C4
1
F Chip Capacitor
GRM31MR71H105KA88L
GQM2195C2E8R2BB12D
0603HP-3N9XJLW
0603HP-1N6XJLW
0603HP-4N7XJLW
A5G26S004N
Murata
Murata
Coilcraft
Coilcraft
Coilcraft
NXP
C5, C6, C7, C8
8.2 pF Chip Capacitor
3.9 nH Chip Inductor
1.6 nH Chip Inductor
4.7 nH Chip Inductor
RF Power GaN Transistor
10
, 1/8 W Chip Resistor
L1
L2, L3
L4
Q1
R1
CRCW080510R0FKEA
D126859
Vishay
MTL
PCB
Rogers RO4350B, 0.020
,
= 3.66
r
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
4 / 13
NXP Semiconductors
A5G26S4
ALYWZ
Figure 3. Product Marking
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
5 / 13
NXP Semiconductors
Package Information
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
6 / 13
NXP Semiconductors
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
7 / 13
NXP Semiconductors
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
8 / 13
NXP Semiconductors
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
9 / 13
NXP Semiconductors
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
10 / 13
NXP Semiconductors
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
11 / 13
NXP Semiconductors
Product Documentation, Software and Tools
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
Revision History
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Dec. 2020
Jan. 2021
Initial release of data sheet
T
a
ble 1, Maximum Ratings: updated operating voltage for complete data sheet standardization, p. 2
T
a
ble 2, Recommended Operating Conditions: added to data sheet, p. 2
2
Jan. 2022
T
a
ble 6, DC On Characteristics, V
Min, Typ and Max values updated to match production test values,
GS(th):
p. 2
A5G26S004N Airfast RF Power GaN Transistor, Rev. 2, January 2022
Data Sheet:
T
e
chnical Data
12 / 13
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/Sales
T
e
rmsandConditions.
NX
P
,
t
he NXP logo, Freescale, the Freescale logo and Airfast are trademarks of
NXP B.V. All other product or service names are the property of their respective owners.
E
NXP B.V. 2020–2022
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: January 2022
Document identifier: A5G26S004N
