NXP-Semicon-A5G35H055NT4
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A5G35H055N
Airfast RF Power GaN Transistor
Rev. 1 — January 2021
Data Sheet:
T
e
chnical Data
This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 3400 to 3600 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
A5G35H055N
3500 MHz
Typical Doherty Single- Carrier W- CDMA Reference Circuit Performance:
DD
= 48 Vdc, I
DQA
= 35 mA, V
GSB
= –4.6 Vdc, P
out
= 7.6 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCD
F
.
(1)
3400–3600 MHz, 7.6 W Avg., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
V
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
3400 MHz
3500 MHz
3600 MHz
(dB)
15.6
15.5
15.4
(%)
58.2
58.0
56.8
8.0
8.4
8.1
–28.5
–31.9
–34.4
1. All
data measured in reference circuit with device soldered to printed circuit board.
Features
High terminal impedances for optimal broadband performance
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating
conditions
DFN 7
6.5
PLASTIC
Designed for low complexity analog or digital linearization systems
Optimized for massive MIMO active antenna systems for 5G base stations
V
1
2
3
6
5
4
V
DSA
GSA
N.C.
N.C.
V
V
DSB
GSB
(
T
o
p View)
Note: Exposed
backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
NXP reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
mA
C
Drain- Source Voltage
V
DSS
125
–8, 0
Gate- Source Voltage
V
GS
DD
Operating Voltage
V
55
Maximum Forward Gate Current, I
Storage
T
e
mperature Range
, @ T
= 25
C
G (A+B)
I
GMAX
6
C
T
stg
–
6
5 to +150
–
5
5 to +150
225
Case Operating
T
e
mperature Range
Maximum Channel
T
e
mperature
T
C
C
T
C
CH
Table 2. Recommended Operating Conditions
Rating
Symbol
Value
Unit
Operating Voltage
V
48
Vdc
DD
Table 3. Thermal Characteristics
Characteristic
Symbol
(IR)
Value
Unit
(1)
Thermal Resistance by Infrared Measurement, Active Die Surface- to- Case
R
4.1
C/W
JC
Case
T
e
mperature 116
C, P
= 7.5 W
D
(2)
Thermal Resistance by Finite Element Analysis, Channel- to- Case
R
11.0
C/W
CHC
Case
T
e
mperature 116
C, P
= 7.5 W
(FEA)
D
Table 4. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JS- 001- 2017)
Charge Device Model (per JS- 002- 2014)
C3
Table 5. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22- A113, IPC/JEDEC J- STD- 020
3
260
C
Table 6. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(3)
Off Characteristics
Off- State Drain Leakage
I
mAdc
D(BR)
(V =
150 Vdc, V
= –8 Vdc)
Carrier
Peaking
—
—
—
—
2.3
3.8
DS
GS
(V =
150 Vdc, V
= –8 Vdc)
DS
GS
On Characteristics — Side A, Carrier
Gate Threshold Voltage
V
–3.5
–2.9
–2.3
–3.0
–2.5
—
–2.0
–1.9
—
Vdc
Vdc
GS(th)
(V =
10 Vdc, I
= 2.3 mAdc)
DS
D
Gate Quiescent Voltage
(V =
48 Vdc, I
= 30 mAdc, Measured in Functional
T
e
st)
V
GSA(Q)
DD
DA
Gate- Source Leakage Current
(V =
150 Vdc, V
= –12 Vdc)
I
mAdc
GSS
DS
GS
On Characteristics — Side B, Peaking
Gate Threshold Voltage
V
–3.5
–3.8
–3.0
—
–2.0
—
Vdc
GS(th)
(V =
10 Vdc, I
= 3.8 mAdc)
DS
D
Gate- Source Leakage Current
(V =
150 Vdc, V
= –12 Vdc)
I
mAdc
GSS
DS
GS
1. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
2. R
(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated
CHC
[A + B/(T + 273)]
by the expression MTTF (hours) = 10
, where
T
is the channel temperature in degrees Celsius,
A
= –11.1 and
B
= 8366.
3. Each
side of device measured separately.
(continued)
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
T
e
chnical Data
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NXP Semiconductors
Table 6. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
= 7.6 W Avg., f = 3500 MHz, 1- tone CW.
[See note on correct biasing sequence.]
(In NXP Doherty Production
T
e
st Fixture, 50 ohm system) V
= 48 Vdc, I
= 30 mA, V
= (V
– 1.55) Vdc,
GSB t
DD
DQA
P
out
Power Gain
Drain Efficiency
G
12.0
13.5
51.5
46.2
16.0
—
dB
%
ps
43.9
45.1
D
P
@ 6 dB Compression Point
P6dB
—
dBm
out
(2)
Wideband Ruggedness
(In NXP Doherty Reference Circuit, 50 ohm system) I
= 35 mA, V
= –4.6 Vdc, f = 3500 MHz, Additive
GSB
DQA
White Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 400 MHz at 55 Vdc, 14.2 W Avg. Modulated Output Power
(3 dB Input Overdrive from 0.21 W Avg. Modulated Output Power)
No Device Degradation
(2)
Typical Performance
(In NXP Doherty Reference Circuit, 50 ohm system) V
= 48 Vdc, I
= 35 mA, V
GSB
= –4.6 Vdc,
—
DD
DQA
3400–3600 MHz Bandwidth
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
300
0.2
MHz
dB
res
Gain Flatness in 200 MHz Bandwidth @ P
= 7.6 W Avg.
out
G
—
—
F
Fast CW, 27 ms Sweep
P
@ 6 dB Compression Point
P6dB
—
—
46.7
–4
—
—
W
out
AM/PM
(Maximum value measured at the P6dB compression point across
the 3400–3600 MHz bandwidth)
Gain Variation over
T
e
mperature
(–40
C to +85
C)
G
—
—
0.022
0.002
—
—
dB/
C
dB/
C
Output Power Variation over
T
e
mperature
P6dB
(–40
C to +85
C)
Table 7. Ordering Information
Device
Tape and Reel Information
T4 Suffix = 2,500 Units, 16 mm
T
a
pe Width, 13- inch Reel
Package
A5G35H055NT4
DFN 7
6.5
1. Part
internally input matched.
2. All
data measured in reference circuit with device soldered to printed circuit board.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors in a Doherty Configuration
Bias ON the device
1. Set
gate voltage V
and V
to –5
V
.
GSB
GSA
2. Set
drain voltage V
and V
to nominal supply voltage (+48 V).
DSB
DSA
3. Increase
V
4. Increase
V
(carrier side) until I
current is attained.
DQA
GSA
GSB
(peaking side) to target bias voltage.
5. Apply
RF input power to desired level.
Bias OFF the device
1. Disable
RF input power.
2. Adjust
gate voltage V
and V
to –5
V
.
GSB
GSA
3. Adjust
drain voltage V
and V
to 0
V
.
A
llow adequate time
DSB
DSA
for drain voltage to reduce to 0 V from external drain capacitors.
4. Disable
V and
V
.
GSB
GSA
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
T
e
chnical Data
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NXP Semiconductors
Package Information
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
T
e
chnical Data
4 / 11
NXP Semiconductors
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
T
e
chnical Data
5 / 11
NXP Semiconductors
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
T
e
chnical Data
6 / 11
NXP Semiconductors
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
T
e
chnical Data
7 / 11
NXP Semiconductors
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
T
e
chnical Data
8 / 11
NXP Semiconductors
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
T
e
chnical Data
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NXP Semiconductors
Product Documentation and Software
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Revision History
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Dec. 2020
Jan. 2021
Initial release of data sheet
T
a
ble 1, Maximum Ratings: updated operating voltage for complete data sheet standardization, p. 2
T
a
ble 2, Recommended Operating Conditions: added to data sheet, p. 2
A5G35H055N Airfast RF Power GaN Transistor, Rev. 1, January 2021
Data Sheet:
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e
chnical Data
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How to Reach Us
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/Sales
T
e
rmsandConditions.
NX
P
,
t
he NXP logo and Airfast are trademarks of NXP B.
V
.
A
ll other product or service
names are the property of their respective owners.
E
NXP B.V. 2020–2021
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: January 2021
Document identifier: A5G35H055N
