NXP-Semicon-AFT05MP075NR1
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Document Number: AFT05MP075N
Rev. 1, 8/2014
Freescale Semiconductor
T
e
chnical Data
RF Power LDMOS Transistors
High Ruggedness N
–
–
Channel
AFT05MP075NR1
AFT05MP075GNR1
Enhancement
–
–
Mode Lateral MOSFE
T
s
Designed for mobile two
–
–
way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large
–
–
signal, common source amplifier
applications in mobile radio equipment.
136–520 MHz, 70 W, 12.5 V
BROADBAND
RF POWER LDMOS TRANSISTORS
Typical Performance:
12.5 V, T
= 25
C, CW
A
G
D
P
out
ps
Frequency
136 MHz
(dB)
21.0
14.6
18.5
(%)
68.0
65.8
68.5
(W)
76
(1)
450
–
–
520 MHz
75
(2)
520 MHz
70
TO
–
-270WB
–
-4
AFT05MP075NR1
Load Mismatch/Ruggedness
Signal
Type
Frequency
(MHz)
P
(W)
Test
Voltage
in
VSWR
Result
(2)
520
CW
> 65:1 at all
2
17
No Device
Phase Angles
(3 dB Overdrive)
Degradation
1. Measured
in 450
–
–
520 MHz UHF broadband reference circuit.
2. Measured
in 520 MHz narrowband test circuit.
TO
–
-270WBG
–
-4
AFT05MP075GNR1
Features
Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB, LTE
In
T
a
pe and Reel. R1 Suffix = 500 Units, 44 mm
T
a
pe Width, 13
–
–
inch Reel.
Drain A
Drain B
Gate A
Gate B
Typical Applications
Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio
(
T
o
p View)
Note: Exposed
backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2013–2014. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain
–
–
Source Voltage
V
–
–
0.5, +40
–
–
6.0, +12
17, +0
DSS
Gate
–
–
Source Voltage
V
GS
DD
Operating Voltage
V
Storage
T
e
mperature Range
Case Operating
T
e
mperature Range
T
stg
–
–
65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction
T
e
mperature Range
T
J
C
T
o
tal Device Dissipation @ T
= 25
C
P
690
W
C
D
Derate above 25
C
3.45
W/
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.29
C/W
JC
Case
T
e
mperature 80
C, 70 W CW, 12.5 Vdc, I
= 400 mA, 520 MHz
DQ(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22
–
–
A
1
14)
Class
2, passes 2500 V
A, passes 250 V
IV, passes 2000 V
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020
3
260
C
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
3
2
Adc
Adc
nAdc
DSS
DSS
GSS
(V =
40 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
12.5 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
I
600
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 295
Adc)
V
1.7
—
2.1
0.14
7.3
2.5
—
Vdc
Vdc
S
GS(th)
DS
D
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 3.0 Adc)
V
DS(on)
GS
D
(4)
Forward Transconductance
(V =
10 Vdc, I
= 8 Adc)
g
—
—
fs
GS
D
1. Continuous
use at maximum temperature will affect MTT
F
.
2. MTTF
calculator available at http://www.freescale.com/rf. Select Software &
T
o
ols/Development
T
o
ols/Calculators to access MTTF
calculators by product.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
–
–
A
N1955.
4. Each
side of device measured separately.
(continued)
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V =
12.5 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
—
—
—
2.3
64
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V =
12.5 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
148
iss
(V =
12.5 Vdc, V
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
DS
GS
(2)
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 12.5 Vdc, I
= 400 mA, P
= 1 W, f = 520 MHz
DQ(A+B) in
DD
Common
–
–
Source Amplifier Output Power
Drain Efficiency
P
—
—
70
—
—
W
%
out
68.5
D
Load Mismatch/Ruggedness
(In Freescale
T
e
st Fixture, 50 ohm system) I
= 400 mA
DQ(A+B)
Frequency
(MHz)
Signal
Type
P
in
(W)
VSWR
Test Voltage, V
Result
No Device Degradation
DD
520
CW
> 65:1 at all Phase Angles
2
17
(3 dB Overdrive)
1. Each
side of device measured separately.
2. Measurements
made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
11
300
100
C
iss
V
= 3.75 Vdc
GS
T =
25
C
A
10
9
8
3.5 Vdc
C
7
6
5
4
3
2
oss
10
1
3.25 Vdc
3 Vdc
2.5 Vdc
10
C
rss
1
0
Measured with
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc
GS
0
2
4
6
8
12
14
16 18
20
0
5
10
15
20
V
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
V ,
DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
DS
DS
Note:
Each side of device measured separately.
Note:
Measured with both sides of the transistor tied together.
Figure 2. Capacitance versus Drain
–
-Source Voltage
Figure 3. Drain Current versus Drain
–
-Source Voltage
8
10
V
= 12.5 Vdc
DD
I
D
= 6.3 Amps
7
10
10
10
10
7.8 Amps
9.4 Amps
6
5
4
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
C)
J
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 4. MTTF versus Junction Temperature
–
– CW
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
520 MHz NARROWBAND PRODUCTION TEST FIXTURE
C1
C20
C19
C2 C3
AFT05MP075N
Rev. 1
B1
C18
C17
C4
C16
C15
L1
COAX1
COAX3
L3
C6
C7
C22
C24
C21
C9
C8*
C10
C23*
C26
C5
L4
C25
COAX2
COAX4
L2
C27
C28
B2
C14
C11
C29
C13
C30
C12
*C8 and C23 are mounted vertically.
Figure 5. AFT05MP075NR1 Narrowband Test Circuit Component Layout — 520 MHz
Table 6. AFT05MP075NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads
2743019447
Fair-Rite
C1, C11
22
F
,
3
5 V, Tantalum Capacitors
0.1
F Chip Capacitors
220 nF Chip Capacitors
2.2
F Chip Capacitors
5.1 pF Chip Capacitor
T491X226K035AT
Kemet
AVX
C2, C12, C18, C28
C3, C13
C4, C14
C5
CDR33BX104AKWS
C1812C224K5RAC-TU
C1825C225J5RAC-TU
ATC100B5R1CT500XT
ATC100B200JT500XT
ATC100B160JT500XT
ATC100B360JT500XT
ATC100B2R7BT500XT
ATC100B241JT200XT
G2225X7R225KT3AB
C1812F104K1RAC
–
–
TU
MCGPR63V477M13X26-RH
ATC100B510GT500XT
ATC100B101JT500XT
ATC100B240JT500XT
A02TKLC
Kemet
Kemet
ATC
C6, C7
20 pF Chip Capacitors
16 pF Chip Capacitor
ATC
C8
ATC
C9
36 pF Chip Capacitor
ATC
C10
2.7 pF Chip Capacitor
ATC
C15, C25
C16, C26
C17, C27
C19, C20, C29, C30
C21
240 pF Chip Capacitors
2.2
F Chip Capacitors
0.1
F Chip Capacitors
470
F
,
6
3 V Electrolytic Capacitors
51 pF Chip Capacitor
ATC
ATC
Kemet
Multicomp
ATC
C22, C24
C23
100 pF Chip Capacitors
24 pF Chip Capacitor
ATC
ATC
L1, L2
5.0 nH Inductors
Coilcraft
Coilcraft
Micro-Coax
Arlon
L3, L4
17.5 nH Inductors
GA3095
–
–
ALC
Coax1, 2, 3, 4
PCB
25
Semi Rigid Coax, 2.4
Shield Length
UT-141C-25
0.030
,
= 2.55
AD255A
r
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS — 520 MHz
120
100
80
V
= 13.6 Vdc, P
= 1 W
in
DD
V
= 12.5 Vdc, P
= 1 W
in
DD
V
= 13.6 Vdc, P
= 0.5 W
in
DD
60
40
V
P
= 12.5 Vdc
= 0.5 W
DD
in
20
0
f = 520 MHz
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
Figure 7. Output Power versus Gate
–
-Source Voltage
21
20
19
18
17
16
80
70
60
50
G
ps
40
30
20
10
P
D
out
15
14
13
V
= 12.5 Vdc, I
= 400 mA
DQ(A+B)
DD
f = 520 MHz
0
0.1
1
3
P ,
INPUT POWER (WATTS)
in
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
V
= 12.5 Vdc, I
= 400 mA, P
= 70 W
DQ(A+B) out
DD
f
Z
Z
load
source
MHz
520
0.91 + j2.37
2.56 + j0.27
Z
Z
=
T
e
st
circuit impedance as measured from
gate to gate, balanced configuration.
source
=
T
e
st
circuit impedance as measured from
drain to drain, balanced configuration.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
+
–
–
50
50
–
–
+
Z
Z
load
source
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
450
–
-520 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 8. 450
–
-520 MHz UHF Broadband Performance
(In Freescale Reference Circuit, 50 ohm system)
V
= 12.5 Volts, I
= 500 mA, T
= 25
C, CW
DQ(A+B) A
DD
Frequency
(MHz)
G
P
out
(W)
ps
D
(dB)
15.9
14.6
15.1
(%)
65.8
72.9
71.1
450
485
520
75
75
75
Table 9. Load Mismatch/Ruggedness
(In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
P
in
(W)
VSWR
Test Voltage, V
Result
DD
485
CW
> 65:1 at all
6
17
No Device
Phase Angles
(3 dB Overdrive)
Degradation
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
8
450
–
-520 MHz UHF BROADBAND REFERENCE CIRCUIT
C19
L3
C21
C15
B1
C7
C23
C16
C17
C18
C20
C22
L1
C9
C11
C5
C3
R1
Q1
R2
R3
C14*
C2
C1
C24
C13
L2
C12
C4
C8 C10
C6
AFT05MP075N Rev. 1
*C14 is mounted vertically.
Figure 10. AFT05MP075NR1 UHF Broadband Reference Circuit Component Layout — 450
–
-520 MHz
Table 10. AFT05MP075NR1 UHF Broadband Reference Circuit Component Designations and Values — 450
–
-520 MHz
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2661000101
Fair-Rite
C1, C3, C4
C2
10 pF Chip Capacitors
ATC600F100JT250XT
ATC600F150JT250XT
ATC600F560JT250XT
ATC800B330JT500XT
ATC800B300JT500XT
ATC800B5R6CT500XT
ATC800B160JT500XT
ATC800B101JT500XT
T491D476K016AT
ATC
15 pF Chip Capacitor
ATC
C5, C6
C7, C8
C9, C10
C11, C12
C13
56 pF Chip Capacitors
ATC
33 pF Chip Capacitors
ATC
30 pF Chip Capacitors
ATC
5.6 pF Chip Capacitors
16 pF Chip Capacitor
ATC
ATC
C14
100 pF Chip Capacitor
47
F
,
1
6 V
T
a
ntalum Capacitor
1000 pF Chip Capacitors
200 pF Chip Capacitors
100 pF Chip Capacitors
10
F Chip Capacitor
ATC
C15
Kemet
ATC
C16, C21
C17, C20
C18, C19
C22
ATC100B102JT50XT
ATC100B201JT300XT
ATC100B101JT500XT
GRM55DR61H106KA88L
MCGPR35V337M10X16-RH
ATC800B1R5CT500XT
0805CS-121X-LB
ATC
ATC
Murata
Multicomp
ATC
C23
330
F
,
3
5 V Electrolytic Capacitor
1.5 pF Chip Capacitor
C24
L1
120 nH Chip Inductor
CoilCraft
CoilCraft
Beldon
Freescale
Vishay
Vishay
Shengyi
L2
2.55 nH, 3 Turn Inductor
6 Turns, #22 AWG, 0.125
ID
RF Power LDMOS Transistor
180
, 1/10 W Chip Resistor
10
, 3/4 W Chip Resistors
0906-3JLC
L3
8075 Copper Magnetic Wire
AFT05MP075NR1
Q1
R1
RR1220P-181-B-T5
CRCW201010R0FKEF
S1000-2, FR4
R2, R3
PCB
0.030
,
= 4.8
r
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
10
TYPICAL CHARACTERISTICS — 450
–
-520 MHz UHF BROADBAND
REFERENCE CIRCUIT
17
16.5
16
74
72
D
70
15.5
68
G
ps
66
15
14.5
14
100
90
80
70
P
out
13.5
13
V
= 13.6 Vdc, P
= 3 W
in
DD
I
= 500 mA
DQ(A+B)
440 450
460
470
480 490
500
510
520 530
f, FREQUENCY (MHz)
Figure 12. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V
17
16.5
16
74
72
D
70
15.5
68
V
I
= 12.5 Vdc, P
= 3 W
DQ(A+B)
DD
in
= 500 mA
66
15
14.5
100
G
ps
14
13.5
13
90
80
70
P
out
440 450
460
470
480 490
500
510
520 530
f, FREQUENCY (MHz)
Figure 13. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
TYPICAL CHARACTERISTICS — 450
–
-520 MHz UHF BROADBAND
REFERENCE CIRCUIT
140
120
V
= 13.6 Vdc, P
= 3 W
in
f = 485 MHz
V
DD
90
80
70
60
50
40
30
V
P
= 13.6 Vdc
= 3 W
f = 485 MHz
DD
V
= 13.6 Vdc, P
= 1.5 W
in
DD
in
= 12.5 Vdc, P
= 3 W
DD
in
100
80
60
40
20
V
P
= 12.5 Vdc
= 3 W
DD
in
V
P
= 12.5 Vdc
= 1.5 W
DD
V
P
= 13.6 Vdc
= 1.5 W
in
DD
in
Detail A
V
P
= 12.5 Vdc
= 1.5 W
DD
20
10
0
in
0
0.5
1
2.5
3.5
1.5
2
3
0
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
2
0
1
3
4
5
Detail A
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
Figure 14. Output Power versus Gate
–
-Source Voltage
120
100
80
19
18
17
16
V
= 12.5 Vdc, I
520 MHz
= 500 mA
DD
DQ(A+B)
450 MHz
520 MHz
485 MHz
485 MHz
G
ps
485 MHz
60
450 MHz
450 MHz
520 MHz
15
14
13
40
20
0
D
P
out
0.05
0.1
1
5
P ,
INPUT POWER (WATTS)
in
Figure 15. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
12
450
–
-520 MHz UHF BROADBAND REFERENCE CIRCUIT
Z =
2
o
f = 530 MHz
Z
source
f = 450 MHz
f = 530 MHz
Z
load
f = 450 MHz
V
= 12.5 Vdc, I
= 500 mA, P
= 75 W
DQ(A+B) out
DD
f
Z
Z
load
source
MHz
450
460
470
480
490
500
510
520
530
0.55 + j0.59
0.72 + j0.81
0.79 + j0.93
0.71 + j0.86
0.62 + j0.78
0.60 + j0.74
0.64 + j0.72
0.69 + j0.78
0.70 + j1.03
0.75 + j0.30
0.82 + j0.39
0.90 + j0.42
0.92 + j0.44
0.93 + j0.41
0.89 + j0.39
0.85 + j0.39
0.79 + j0.39
0.74 + j0.43
Z
Z
=
T
e
st
circuit impedance as measured from
gate to ground.
source
=
T
e
st
circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50
50
Z
Z
load
source
Figure 16. UHF Broadband Series Equivalent Source and Load Impedance — 450
–
-520 MHz
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
PACKAGE DIMENSIONS
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
14
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
16
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
18
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over
–
–
Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and
T
o
ols, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
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REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Feb. 2013
Aug. 2014
Initial Release of Data Sheet
T
a
pe and Reel information: corrected tape width information from 32
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inch reel to 44
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inch reel to reflect
actual reel size, p. 1
Replaced case outline TO
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270WB
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4, Issue D with Issue E, pp. 14–16. Added notes 9 and 10, four
exposed source tabs, and a feature control frame to E and E5 on p. 14. Removed style and pin information
from notes section on p. 16.
AFT05MP075NR1 AFT05MP075GNR1
RF Device Data
Freescale Semiconductor, Inc.
20
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Document Number: AFT05MP075N
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