NXP-Semicon-AFT20S015NR1
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Document Number: AFT20S015N
Rev. 2, 04/2020
NXP Semiconductors
T
e
chnical Data
RF Power LDMOS Transistors
AFT20S015N
AFT20S015GN
N
–
–
Channel Enhancement
–
–
Mode Lateral MOSFE
T
s
These 1.5 W RF power LDMOS transistors are designed for cellular base
station applications covering the frequency range of 1805 to 2700 MHz.
2100 MHz
Typical Single
–
–
Carrier W
–
–
CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 132 mA, P
out
= 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCD
F
.
1805–2700 MHz, 1.5 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
17.5
17.6
17.6
(%)
22.0
22.0
22.0
8.9
9.0
9.1
–
–
43.0
–
–
44.0
–
–
44.0
—
1
1
— 1 2
— 1 4
T O
–
– 2 7 0
–
– 2
PLASTIC
AFT20S015N
1800 MHz
Typical Single
–
–
Carrier W
–
–
CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 132 mA, P
out
= 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCD
F
.
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
1805 MHz
1840 MHz
1880 MHz
(dB)
18.0
18.1
18.0
(%)
21.0
22.0
22.0
T O
–
– 2 7 0
–
– 2
G U L L
PLASTIC
AFT20S015GN
9.2
9.2
9.1
–
–
42.0
–
–
44.0
–
–
45.0
—
1
1
— 1 0
— 1 0
2600 MHz
Typical Single
–
–
Carrier W
–
–
CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 132 mA, P
out
= 2.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCD
F
.
RF /V
RF /V
out DS
in GS
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2300 MHz
2400 MHz
2500 MHz
2600 MHz
2700 MHz
(dB)
15.7
16.0
15.8
15.8
15.5
(%)
23.0
23.0
23.0
21.0
20.0
9.0
8.8
8.6
8.5
8.4
–
–
45.0
–
–
44.0
–
–
43.0
–
–
43.0
–
–
42.0
— 6
— 7
— 6
— 7
— 8
(
T
o
p View)
Note: The
backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Features
Greater negative gate
–
–
source voltage range for improved Class C
operation
Designed for digital predistortion error correction systems
Optimized for Doherty applications
2013, 2020 NXP B.
V
.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain
–
–
Source Voltage
V
–
–
0.5, +65
–
–
6.0, +10
32, +0
DSS
Gate
–
–
Source Voltage
V
GS
DD
Operating Voltage
V
Storage
T
e
mperature Range
Case Operating
T
e
mperature Range
T
stg
–
–
65 to +150
–
–
40 to +150
–
–
40 to +225
T
C
C
(1,2)
Operating Junction
T
e
mperature Range
T
J
C
CW Operation @ T
= 25
C
CW
11
W
C
Derate above 25
C
0.1
W/
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
4.2
C/W
JC
Case
T
e
mperature 77
C, 1.5 W CW, 28 Vdc, I
= 132 mA, 2140 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
A
Human Body Model (per JESD22
–
–
A
1
14)
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020
3
260
C
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
I
1
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 17.6
Adc)
V
V
1.5
2.4
0.1
2.0
3.0
0.2
2.5
3.4
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 132 mAdc, Measured in Functional
T
e
st)
DD
D
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 176 Adc)
V
GS
D
1. Continuous
use at maximum temperature will affect MTT
F
.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
(continued)
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In NXP
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 132 mA, P
= 1.5 W Avg., f = 2170 MHz, Single
–
–
Carrier
DD
DQ
out
W
–
–
CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCD
F
.
A
CPR measured in 3.84 MHz Channel
Bandwidth @
5 MHz Offset.
Power Gain
G
16.0
20.0
8.6
—
17.6
22.0
9.1
19.0
—
dB
%
ps
D
Drain Efficiency
Output Peak
–
–
to
–
–
Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
–
–
44.0
— 1 4
–
–
41.0
— 9
—
Load Mismatch
(In NXP
T
e
st Fixture, 50 ohm system) I
= 132 mA, f = 2140 MHz
DQ
(3)
VSWR 10:1 at 32 Vdc, 14 W CW
Output Power
No Device Degradation
(3)
(3 dB Input Overdrive from 12 W CW
Rated Power)
Typical Performance
(In NXP
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 132 mA, 2110
–
–
2170 MHz Bandwidth
DD
DQ
(3,4)
P
@ 1 dB Compression Point, CW
P1dB
—
—
16.2
— 1 6
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110
–
–
2170 MHz frequency range.)
VBW Resonance Point
VBW
—
170
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
= 1.5 W Avg.
G
—
—
0.05
0.01
—
—
dB
out
F
Gain Variation over
T
e
mperature
G
dB/
C
(
–
–
30
C to +85
C)
Output Power Variation over
T
e
mperature
(
–
–
30
C to +85
C)
P1dB
—
0.004
—
dB/
C
(3)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
AFT20S015NR1
TO
–
–
270
–
–
2
R1 Suffix = 500 Units, 24 mm
T
a
pe Width, 13
–
–
inch Reel
AFT20S015GNR1
TO
–
–
270G
–
–
2
1. Part
internally matched on input.
2. Measurements
made with device in straight lead configuration, before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
3. Exceeds
recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Calculated
from load pull P3dB measurements.
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
3
C15
C27
C9
D47530
C19
C17
C21
C3
V
GS
V
DD
C7
C23
C5*
C13
C11
C25
C1*
C2*
R1
R2
C4*
C18
C20
C26
C14
C12
C6*
C8
C24
V
DD
V
GS
C22
C10
AFT20S015N
Rev. 2
C28
C16
*C1, C2, C4, C5 and C6 are mounted vertically.
Note: NXP
has begun the transition of marking printed circuit boards (PCBs) with the NXP exception logo. PCBs may have either Freescale
or NXP markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. AFT20S015N Test Circuit Component Layout — 2110
–
-2170 MHz
Table 7. AFT20S015N Test Circuit Component Designations and Values — 2110
–
-2170 MHz
Part
Description
Part Number
ATC100B8R2CT500XT
ATC800B2R4BT500XT
ATC100B1R7BT500XT
ATC100B9R1CT500XT
ATC100B6R8CT500XT
ATC100B241JT200XT
C1812C224K5RAC
–
–
TU
CDR33BX104AKWS
C1825C225J5RAC
–
–
TU
T491X226K035AT
Manufacturer
C1
8.2 pF Chip Capacitor
ATC
ATC
ATC
ATC
ATC
ATC
C2
2.4 pF Chip Capacitor
C3
1.7 pF Chip Capacitor
C4
9.1 pF Chip Capacitor
C5, C6
C7, C8
6.8 pF Chip Capacitors
240 pF Chip Capacitors
220 pF Chip Capacitors
0.1
F Chip Capacitors
2.2
F Chip Capacitors
22
F
,
3
5 V
T
a
ntalum Capacitors
75 pF Chip Capacitors
470
F
,
6
3 V Electrolytic Capacitors
1
Chip Resistors
C9, C10, C21, C22
C11, C12, C23, C24
C13, C14, C25, C26
C15, C16
Kemet
AVX
Kemet
Kemet
ATC
C17, C18, C19, C20
C27, C28
ATC800B750JT500XT
MCGPR63V477M13X26
–
–
RH
CRCW12061R00FKEA
D47530
Multicomp
Vishay
MTL
R1, R2
PCB
Rogers RO4350B, 0.020
,
= 3.66
r
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
4
TYPICAL CHARACTERISTICS — 2110
–
-2170 MHZ
18
17.9
17.8
17.7
17.6
23
V
I
= 28 Vdc, P
= 1.5 W (Avg.)
out
DD
DQ
D
= 132 mA, Single
–
–
Carrier W
–
–
CDMA
22.5
22
21.5
G
ps
21
— 4 1
— 4 2
— 9
— 0 . 4
— 0 . 6
— 0 . 8
— 1
17.5
17.4
17.3
17.2
IRL
PARC
— 1 3
— 1 7
— 2 1
— 2 5
— 2 9
— 4 3
— 4 4
— 4 5
— 4 6
ACPR
3.84 MHz Channel Bandwidth
— 1 . 2
— 1 . 4
17.1
17
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
2060 2080 2100
2120 2140 2160 2180 2200
2220
f, FREQUENCY (MHz)
Figure 3. Single
–
-Carrier Output Peak
–
-to
–
-Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 1.5 Watts Avg.
— 1 0
V
= 28 Vdc, P
= 10 W (PEP), I
= 132 mA
out DQ
DD
Two
–
–
T
one Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
— 2 0
— 3 0
— 4 0
— 5 0
— 6 0
IM3
–
–
U
IM3
–
–
L
IM5
–
–
L
IM5
–
–
U
IM7
–
–
U
IM7
–
–
L
1
10
100
200
TWO
–
–
TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two
–
-Tone Spacing
18.5
18
0
— 2 5
— 3 0
— 3 5
— 4 0
— 4 5
— 5 0
— 5 5
60
–
–
1 dB = 1.5 W
ACPR
— 1
50
D
–
–
2 dB = 2.2 W
17.5
17
— 2
— 3
40
30
20
10
0
G
ps
–
–
3 dB = 3 W
16.5
16
— 4
— 5
PARC
V
= 28 Vdc, I
= 132 mA, f = 2140 MHz
DQ
Single
–
–
Carrier W
–
–
CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
DD
— 6
15.5
1
2
3
4
5
6
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak
–
-to
–
-Average Ratio
Compression (PARC) versus Output Power
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
5
TYPICAL CHARACTERISTICS — 2110
–
-2170 MHz
60
0
20
2140 MHz
2110 MHz
V
= 28 Vdc, I
= 132 mA
DQ
DD
Single
–
–
Carrier W
–
–
CDMA
D
50
40
30
20
10
0
— 1 0
— 2 0
— 3 0
— 4 0
— 5 0
— 6 0
19
18
17
16
2140 MHz
2170 MHz
2170 MHz
G
ps
ACPR
2110 MHz
2170 MHz
2140 MHz
2110 MHz
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
15
14
1
10
, OUTPUT POWER (WATTS) AVG.
20
P
out
Figure 6. Single
–
-Carrier W
–
-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
10
21
V
P
= 28 Vdc
= 0 dBm
= 132 mA
DD
in
19
17
15
Gain
IRL
I
DQ
0
— 1 0
— 2 0
— 3 0
— 4 0
13
11
9
1700 1800 1900 2000 2100 2200
2300 2400 2500
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
6
ALTERNATE CHARACTERIZATION — 1805
–
-1880 MHz
C16
C28
C10
D45064
C20
V
GS
V
DD
C8
C6*
C14
C12
C18
C24
C25
C26
C22
C23
C1*
C2*
R1
R2
C4*
C5*
C3*
C19
C27
C15
C13
C7*
C9
V
DD
V
GS
C21
C11
AFT20S015N
Rev. 2
C29
C17
*C1, C2, C3, C4, C5, C6 and C7 are mounted vertically.
Note: NXP
has begun the transition of marking printed circuit boards (PCBs) with the NXP exception logo. PCBs may have either Freescale
or NXP markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 8. AFT20S015N Test Circuit Component Layout — 1805
–
-1880 MHz
Table 8. AFT20S015N Test Circuit Component Designations and Values — 1805
–
-1880 MHz
Part
Description
Part Number
ATC100B11R0CT500XT
ATC800B3R3BT500XT
ATC600F47BT250XT
ATC100B6R8CT500XT
ATC100B241JT200XT
C1812C224K5RAC
–
–
TU
CDR33BX104AKWS
C1825C225J5RAC
–
–
TU
T491X226K035AT
Manufacturer
C1
11 pF Chip Capacitor
ATC
ATC
ATC
ATC
ATC
C2, C3
C4, C5
C6, C7
C8, C9
3.3 pF Chip Capacitors
47 pF Chip Capacitors
6.8 pF Chip Capacitors
240 pF Chip Capacitors
220 pF Chip Capacitors
0.1
F Chip Capacitors
2.2
F
,
5
0 V Chip Capacitors
22
F
,
3
5 V
T
a
ntalum Capacitors
75 pF Chip Capacitors
C10, C11, C22, C23
C12, C13, C24, C25
C14, C15, C26, C27
C16, C17
Kemet
AVX
Kemet
Kemet
ATC
C18, C19, C20, C21
C28, C29
ATC800B750JT500XT
MCGPR63V477M13X26
–
–
RH
CRCW12061R00FKEA
D45064
470
F
,
6
3 V Electrolytic Capacitors
1
Chip Resistors
Multicomp
Vishay
MTL
R1, R2
PCB
Rogers RO4350B, 0.020
,
= 3.66
r
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
7
ALTERNATE CHARACTERIZATION — 1805
–
-1880 MHz
19
18.8
18.6
18.4
18.2
23
22
21
20
D
V
DQ
= 28 Vdc, P
= 1.5 W (Avg.)
out
DD
I
= 132 mA, Single
–
–
Carrier W
–
–
CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
G
ps
19
— 4 1
— 4 2
— 9
— 0 . 3
— 0 . 4
— 0 . 5
— 0 . 6
— 0 . 7
— 0 . 8
18
17.8
17.6
17.4
ACPR
— 9 . 5
— 1 0
— 4 3
— 4 4
— 4 5
— 4 6
PARC
IRL
–
–
10.5
—
1
1
17.2
17
—
1
1 . 5
1760 1780 1800
1820 1840 1860 1880 1900
1920
f, FREQUENCY (MHz)
Figure 9. Single
–
-Carrier Output Peak
–
-to
–
-Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 1.5 Watts Avg.
30
25
20
15
10
5
— 2 5
— 3 0
— 3 5
— 4 0
— 4 5
— 5 0
— 5 5
18.4
18.3
18.2
18.1
18
V
= 28 Vdc, I
= 132 mA
1805 MHz
1840 MHz
1880 MHz
DD
DQ
Single
–
–
Carrier W
–
–
CDMA
3.84 MHz Channel Bandwidth
D
1840 MHz
G
ps
ACPR
1805 MHz
1880 MHz
1880 MHz
1840 MHz
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
17.9
17.8
1805 MHz
0
0.1
1
5
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 10. Single
–
-Carrier W
–
-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
21
V
P
= 28 Vdc
= 0 dBm
= 132 mA
DD
Gain
in
— 2
19
17
15
I
DQ
— 4
— 6
— 8
13
IRL
— 1 0
— 1 2
11
9
1400 1500 1600 1700 1800 1900
2000 2100 2200
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
8
ALTERNATE CHARACTERIZATION — 2300
–
-2700 MHz
C15
C20
C9
D48048
V
GS
C18 C19
V
DD
C7
C11
C13
C5
C4*
C17
C2*
C21
C3*
C1*
R1
R2
C6
C14
C12
C8
V
DD
V
GS
C10
AFT20S015N 2.6 GHz
Rev. 0
C16
*C1, C2, C3 and C4 are mounted vertically.
Note: NXP
has begun the transition of marking printed circuit boards (PCBs) with the NXP exception logo. PCBs may have either Freescale
or NXP markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 12. AFT20S015N Test Circuit Component Layout — 2300
–
-2700 MHz
Table 9. AFT20S015N Test Circuit Component Designations and Values — 2300
–
-2700 MHz
Part
Description
Part Number
ATC600F4R3CT250XT
ATC800B1R3BT500XT
ATC600F8R2BT250XT
ATC100B6R8CT500XT
ATC800B6R8CT500XT
C3225X7R1H225KT
C1812C224K5RAC
–
–
TU
CDR33BX104AKWS
C1825C225J5RAC
–
–
TU
T491X226K035AT
Manufacturer
C1
4.3 pF Chip Capacitor
ATC
ATC
ATC
ATC
ATC
TDK
C2
1.3 pF Chip Capacitor
C3
8.2 pF Chip Capacitor
C4
6.8 pF Chip Capacitor
C5, C6
6.8 pF Chip Capacitors
2.2
F Chip Capacitors
220 nF Chip Capacitors
0.1
F Chip Capacitors
2.2
F Chip Capacitors
22
F
,
3
5 V
T
a
ntalum Capacitors
470
F
,
6
3 V Electrolytic Capacitor
4.75
Chip Resistors
C7, C8, C17
C9, C10, C18
C11, C12, C19
C13, C14, C21
C15, C16
C20
Kemet
AVX
Kemet
Kemet
Multicomp
Vishay
MTL
MCGPR63V477M13X26
–
–
RH
CRCW12064R75FKEA
D48048
R1, R2
PCB
Rogers RO4350B, 0.020
,
= 3.66
r
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
9
ALTERNATE CHARACTERIZATION — 2300
–
-2700 MHz
17.5
17
25
23
21
19
V
= 28 Vdc, P
= 2.1 W (Avg.)
out
DD
I
= 132 mA
DQ
D
16.5
16
G
ps
15.5
17
Single
–
–
Carrier W
–
–
CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
— 3 9
— 4 1
0
— 0 . 6
— 0 . 8
— 1
15
14.5
14
ACPR
— 2
— 4
— 6
— 8
— 1 0
— 4 3
— 4 5
— 4 7
— 4 9
13.5
— 1 . 2
— 1 . 4
— 1 . 6
IRL
13
PARC
12.5
2200 2275 2350
2425 2500 2575 2650 2725
2800
f, FREQUENCY (MHz)
Figure 13. Single
–
-Carrier Output Peak
–
-to
–
-Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 2.1 Watts Avg.
30
25
20
15
10
5
— 2 5
— 3 0
— 3 5
— 4 0
— 4 5
— 5 0
— 5 5
16.2
16
V
= 28 Vdc, I
= 132 mA
DQ
DD
2300 MHz
2500 MHz
2700 MHz
Single
–
–
Carrier W
–
–
CDMA
3.84 MHz Channel Bandwidth
D
15.8
15.6
15.4
15.2
15
G
ps
2300 MHz
2500 MHz
2700 MHz
2300 MHz
2500 MHz
ACPR
2700 MHz
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
1
0
0.1
5
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 14. Single
–
-Carrier W
–
-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
2
0
21
19
V
P
= 28 Vdc
= 0 dBm
= 132 mA
DD
in
I
DQ
— 2
— 4
17
15
Gain
IRL
— 6
13
11
9
— 8
— 1 0
2100 2250 2400 2550 2700 2850
3000 3150 3300
f, FREQUENCY (MHz)
Figure 15. Broadband Frequency Response
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
10
PACKAGE INFORMATION
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
11
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
12
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
13
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
14
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
15
AFT20S015N AFT20S015GN
RF Device Data
NXP Semiconductors
16
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Apr. 2013
Nov. 2013
Initial Release of Data Sheet
Upper frequency limit changed from 2690 to 2700 MHz to reflect measurement data, p. 1
T
a
ble 2, Thermal Characteristics: changed 2170 to 2140 MHz to reflect recent thermal test results, p. 2
T
a
ble 5, Electrical Characteristics, Load Mismatch: updated VSWR power levels (8 W CW to 14 W CW,
7 W CW to 12 W CW) to reflect recent characterization data test results, p. 3
T
a
ble 5, Electrical Characteristics, Typical Performance: changed P1dB from 7 W to 16.2 W based on
P3dB load pull calculations, p. 3
Figs. 2, 8, 12,
T
e
st Circuit Component Layout: added MTL number, pp. 4, 7, 9
T
a
bles 6, 7, 8,
T
e
st Circuit Component Designations and Values: updated PCB description to reflect most
current board specifications from Rogers and added MTL part number, pp. 4, 7, 9
2
Apr. 2020
Package Outline Drawings: TO–270–2 package outline updated to Rev. R, pp. 11–13. TO–270G–2
package outline updated to Rev. D, pp. 14–16.
General updates made to align data sheet to current standard
AFT20S015N AFT20S015GN
17
RF Device Data
NXP Semiconductors
Information in this document is provided solely to enable system and software
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T
e
rmsandConditions
.
NX
P
,
t
he NXP logo, Freescale, the Freescale logo and Airfast are trademarks of
NXP B.
V
.
A
ll other product or service names are the property of their respective owners.
E
2013, 2020 NXP B.
V
.
Document Number: AFT20S015N
Rev. 2, 04/2020
