NXP-Semicon-BFU520WX

ꢀ

ꢁ

BFU520W  

ꢀ

7

2

6

NPN wideband silicon RF transistor  

Rev. 1 — 13 January 2014  

Product data sheet  

1. Product

 

profile  

1.1 General

 

description  

NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323  

package.  

The BFU520W is part of the BFU5 family of transistors, suitable for small signal to  

medium power applications up to 2 GHz.  

1.2 Features

 

and benefits  



Low noise, high breakdown RF transistor  



AEC-Q101 qualified  



Minimum noise figure (NF

min

) = 0.6 dB at 900 MHz  



Maximum stable gain 18.5 dB at 900 MHz  



11 GHz f

T

silicon technology  

1.3 Applications  



Applications requiring high supply voltages and high breakdown voltages  



Broadband amplifiers up to 2 GHz  



Low noise amplifiers for ISM applications  



ISM band oscillators  

1.4 Quick

 

reference data  

Table 1.  

Quick reference data  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

open emitter  

open base  

Min Typ

 

Max Unit  

V

CB  

V

CE  

collector-base voltage  

collector-emitter voltage  

–

–

24  

12  

24  

2

V

–

–

V

shorted base  

open collector  

–

–

V

V

EB  

I

C  

emitter-base voltage  

collector current  

–

–

V

–

5

30  

mA  

[1]  

P

tot  

h

FE  

C

c  

total power dissipation  

DC current gain  

T

sp



87



C  

–

–

450 mW  

200  

I

C

= 5 mA; V

CE

= 8 V  

V

CB

= 8 V; f = 1 MHz  

I

C

= 10 mA; V

CE

= 8 V; f = 900 MHz  

60  

–

95  

0.55  

10  

collector capacitance  

transition frequency  

–

–

pF  

f

T  

–

GHz  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 1.  

Quick reference data

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

[2]  

G

p(max)  

NF

min  

maximum power gain  

minimum noise figure  

I

C

= 5 mA; V

CE

= 8 V; f = 900 MHz  

I

C

= 1 mA; V

CE

= 8 V; f = 900 MHz;



S

=



opt  

–

–

–

18.5  

0.6  

–

–

–

dB  

dB  

P

L(1dB)  

output power at 1 dB gain  

compression  

I

C

= 10 mA; V

CE

= 8 V; Z

S

= Z

L

= 50



;  

f = 900 MHz  

7.0  

dBm  

[1] T

sp

is the temperature at the solder point of the collector lead.  

[2] If

 

K > 1 then G

p(max)

is the maximum power gain. If K



1 then G

p(max)

= MS

G

.  

2. Pinning

 

information  

Table 2.  

Discrete pinning  

Description  

base  

Pin  

1

Simplified outline  

Graphic symbol  

ꢂ

ꢂ

2

emitter  

ꢀ

3

collector  

ꢁ

ꢀ

ꢁ

DDDꢀꢁꢂꢁꢃꢄꢅ  

3. Ordering

 

information  

Table 3.  

Ordering information  

Type number  

Package  

Name Description  

Version  

SOT323  

–

BFU520W  

OM7960  

–

–

plastic surface-mounted package; 3 leads  

Customer evaluation kit for BFU520W, BFU530W and BFU550W

[1]  

[1] The

 

customer evaluation kit contains the following:  

a) Unpopulated

 

RF amplifier Printed-Circuit Board (PCB)  

b) Unpopulated

 

RF amplifier Printed-Circuit Board (PCB) with emitter degeneration  

c) Four

 

SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)  

d) BFU520W,

 

BFU530W and BFU550W samples  

e) USB

 

stick with data sheets, application notes, models, S-parameter and noise files  

4. Marking  

Table 4.  

Marking  

Type number  

Marking  

Description  

BFU520W  

ZA*  

* = t : made in Malaysia  

* = w : made in China  

BFU520W  

All information provided in this document is subject to legal disclaimers.  

© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

2 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

5. Design

 

support  

Table 5.  

Available design support  

Download from the BFU520W product information page on

.  

Support item  

Available  

yes  

Remarks  

Device models for Agilent EEsof EDA ADS  

SPICE model  

Based on Mextram device model.  

yes  

Based on Gummel-Poon device  

model.  

S-parameters  

yes  

yes  

yes  

yes  

yes  

Noise parameters  

Customer evaluation kit  

Solder pattern  

See

Section 3

and

Section 10

.  

Application notes  

See

Section 10.1

and

Section 10.2

.  

6. Limiting

 

values  

Table 6.  

Limiting values  

In accordance with the Absolute Maximum Rating System (IEC 60134).  

Symbol Parameter  

Conditions  

open emitter  

open base  

Min Max  

Unit  

V

V

CB  

V

CE  

collector-base voltage  

–

–

–

–

–

30  

16  

30  

3

collector-emitter voltage  

V

shorted base  

open collector  

V

V

EB  

I

C  

emitter-base voltage  

collector current  

V

50  

mA  

T

stg  

V

ESD  

storage temperature  

electrostatic discharge voltage  



65 +150



C  

Human Body Model (HBM) According to JEDEC  

standard 22-A114E  

–



150  

V

Charged Device Model (CDM) According to  

JEDEC standard 22-C101B  

–



2  

kV  

7. Recommended

 

operating conditions  

Table 7.  

Symbol  

V

CB  

Characteristics  

Parameter  

Conditions  

open emitter  

open base  

Min Typ Max  

Unit  

V

collector-base voltage  

collector-emitter voltage  

–

–

–

–

–

–

–

–

–

24  

V

CE  

–

12  

V

shorted base  

open collector  

–

24  

V

V

EB  

I

C  

emitter-base voltage  

collector current  

–

2

V

–

30  

mA  

dBm  



C  

mW  

P

i  

input power  

Z

S

= 50

  

–

10  

T

j  

junction temperature  

total power dissipation  



40  

+150  

450  

[1]  

P

tot  

T

sp



87



C  

–

[1] T

sp

is the temperature at the solder point of the collector lead.  

BFU520W  

All information provided in this document is subject to legal disclaimers.  

© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

3 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

8. Thermal

 

characteristics  

Table 8.  

Thermal characteristics  

Symbol Parameter  

Conditions  

Typ Unit  

[1]  

R

th(j-sp)  

thermal resistance from junction to solder point  

140 K/W  

[1] T

sp

is the temperature at the solder point of the collector lead.  

T

sp

has the following relation to the ambient temperature T

amb  

T

sp

= T

amb

+ P



R

th(sp-a)  

:

With P being the power dissipation and R

th(sp-a)

being the thermal resistance between the solder point and  

ambient. R

th(sp-a)

is determined by the heat transfer properties in the application.  

The heat transfer properties are set by the application board materials, the board layout and the  

environment e.g. housing.  

DDDꢀꢁꢂꢁꢃꢆꢇ  

ꢅꢃꢃ  

3

3  

WRW  

ꢉP:ꢊ  

ꢇꢃꢃ  

ꢄꢃꢃ  

ꢂꢃꢃ  

ꢁꢃꢃ  

ꢀꢃꢃ  

ꢃ

ꢃ

ꢁꢃ  

ꢄꢃ  

ꢅꢃ  

ꢆꢃ ꢀꢃꢃ

 

ꢀꢁꢃ ꢀꢄꢃ ꢀꢅꢃ  

ꢈꢉƒ&ꢊ  

7

VS  

Fig 1.

 

Power derating curve  

9. Characteristics  

Table 9.  

Characteristics  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

V

(BR)CBO

collector-base breakdown voltage  

V

(BR)CEO

collector-emitter breakdown voltage  

I

C

= 100 nA; I

E

= 0 mA  

I

C

= 150 nA; I

B

= 0 mA  

24  

12  

–

–

–

V

–

–

V

I

C  

collector current  

5

<1  

30  

–

mA  

nA  

I

CBO  

h

FE  

C

e  

C

re  

C

c  

collector-base cut-off current  

DC current gain  

I

E

= 0 mA; V

CB

= 8 V  

I

C

= 5 mA; V

CE

= 8 V  

V

EB

= 0.5 V; f = 1 MHz  

V

CE

= 8 V; f = 1 MHz  

V

CB

= 8 V; f = 1 MHz  

–

60 95  

200  

emitter capacitance  

feedback capacitance  

collector capacitance  

transition frequency  

–

–

–

–

0.64 –  

0.35 –  

0.55 –  

10  

pF  

pF  

pF  

f

T  

I

C

= 10 mA; V

CE

= 8 V; f = 900 MHz  

–

GHz  

BFU520W  

All information provided in this document is subject to legal disclaimers.  

© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

4 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 9.  

Characteristics

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

[1]  

G

p(max)  

maximum power gain  

insertion power gain  

minimum noise figure  

f = 433 MHz; V

CE

= 8 V  

I

C

= 1 mA  

–

–

–

16  

–

dB  

dB  

dB  

I

C

= 5 mA  

22.5 –  

I

C

= 10 mA  

24  

13  

–

–

[1]  

[1]  

f = 900 MHz; V

CE

= 8 V  

I

C

= 1 mA  

–

–

–

dB  

dB  

dB  

I

C

= 5 mA  

18.5 –  

19.5 –  

I

C

= 10 mA  

f = 1800 MHz; V

CE

= 8 V  

I

C

= 1 mA  

–

–

–

11  

14  

13  

–

–

–

dB  

dB  

dB  

I

C

= 5 mA  

I

C

= 10 mA  



s

21



2  

f = 433 MHz; V

CE

= 8 V  

I

C

= 1 mA  

–

–

–

10.5 –  

dB  

dB  

dB  

I

C

= 5 mA  

20  

22  

–

–

I

C

= 10 mA  

f = 900 MHz; V

CE

= 8 V  

I

C

= 1 mA  

–

–

–

9

–

dB  

dB  

dB  

I

C

= 5 mA  

15.5 –  

16.5 –  

I

C

= 10 mA  

f = 1800 MHz; V

CE

= 8 V  

I

C

= 1 mA  

–

–

–

6

–

dB  

dB  

dB  

I

C

= 5 mA  

10.5 –  

I

C

= 10 mA  

11  

–

NF

min  

f = 433 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 1 mA  

–

–

–

0.5  

0.7  

0.9  

–

–

–

dB  

dB  

dB  

I

C

= 5 mA  

I

C

= 10 mA  

f = 900 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 1 mA  

–

–

–

0.6  

0.8  

0.9  

–

–

–

dB  

dB  

dB  

I

C

= 5 mA  

I

C

= 10 mA  

f = 1800 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 1 mA  

–

–

–

0.8  

0.9  

1.0  

–

–

–

dB  

dB  

dB  

I

C

= 5 mA  

I

C

= 10 mA  

BFU520W  

All information provided in this document is subject to legal disclaimers.  

© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

5 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 9.  

Characteristics

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

G

ass  

associated gain  

f = 433 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 1 mA  

–

–

–

24  

–

dB  

dB  

dB  

I

C

= 5 mA  

23.5 –  

23.5 –  

I

C

= 10 mA  

f = 900 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 1 mA  

–

–

–

16  

17  

–

–

dB  

dB  

dB  

I

C

= 5 mA  

I

C

= 10 mA  

17.5 –  

f = 1800 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 1 mA  

–

–

–

9.5  

11  

–

–

–

dB  

dB  

dB  

I

C

= 5 mA  

I

C

= 10 mA  

12  

P

L(1dB)  

output power at 1 dB gain compression

 

f = 433 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 5 mA  

–

–

1

6

–

–

dBm  

dBm  

I

C

= 10 mA  

f = 900 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 5 mA  

–

–

2

7

–

–

dBm  

dBm  

I

C

= 10 mA  

f = 1800 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 5 mA  

–

–

4

–

–

dBm  

dBm  

I

C

= 10 mA  

8.5  

IP3

o  

output third-order intercept point  

f

1

= 433 MHz; f

2

= 434 MHz; V

CE

= 8 V;  

Z

S

= Z

L

= 50

  

I

C

= 5 mA  

–

–

10  

16  

–

–

dBm  

dBm  

I

C

= 10 mA  

f

1

= 900 MHz; f

2

= 901 MHz; V

CE

= 8 V;  

Z

S

= Z

L

= 50

  

I

C

= 5 mA  

–

–

11  

17  

–

–

dBm  

dBm  

I

C

= 10 mA  

f

1

= 1800 MHz; f

2

= 1801 MHz;  

V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 5 mA  

–

–

14  

18  

–

–

dBm  

dBm  

I

C

= 10 mA  

[1] If

 

K > 1 then G

p(max)

is the maximum power gain. If K



1 then G

p(max)

= MS

G

.  

BFU520W  

All information provided in this document is subject to legal disclaimers.  

© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

6 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

9.1 Graphs  

DDDꢀꢁꢂꢁꢆꢈꢇ  

ꢂꢃ  

ꢁꢇ  

ꢁꢃ  

ꢀꢇ  

ꢀꢃ  

ꢇ

,

&

ꢉꢋꢊ  

ꢉꢅꢊ  

ꢉP$ꢊ  

ꢉꢇꢊ  

ꢉꢄꢊ  

ꢉꢂꢊ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢃ

ꢃ

ꢀ

ꢁ

ꢂ

ꢄ

ꢇ

ꢅ

ꢋ

ꢆ

9

ꢈꢉ9ꢊ  

&(  

T

amb

= 25



C.  

(1)  

I

B

= 25



A  

(2) I

B

= 75



A  

(3) I

B

= 125



A  

(4)  

I

B

= 175



A  

(5) I

B

= 225



A  

(6) I

B

= 275



A  

(7)  

I

B

= 325



A  

Fig 2.

 

Collector current as a function of collector-emitter voltage; typical values  

DDDꢀꢁꢂꢁꢆꢈꢃ  

DDDꢀꢁꢂꢁꢆꢈꢄ  

ꢀꢇꢃ  

)(  

ꢀꢇꢃ  

K

)(  

K

ꢀꢁꢇ  

ꢀꢃꢃ  

ꢋꢇ  

ꢇꢃ  

ꢁꢇ  

ꢃ

ꢀꢁꢇ  

ꢀꢃꢃ  

ꢋꢇ  

ꢇꢃ  

ꢁꢇ  

ꢃ

ꢉꢂꢊ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢃ

ꢇ

ꢀꢃ  

ꢀꢇ  

ꢁꢃ  

ꢁꢇ  

ꢂꢃ  

ꢃ

ꢇ

ꢀꢃ  

ꢀꢇ  

ꢁꢃ  

ꢁꢇ  

ꢂꢃ  

,

&

ꢈꢉP$ꢊ  

,

&

ꢈꢉP$ꢊ  

T

amb

= 25



C.  

(2) V

CE

= 8.0 V  

V

(1)  

V

(1)  

(2) T

amb

= +25



C  

(3) T

amb

= +125



C  

T

amb

=



40



C  

Fig 3.

 

DC current gain as function of collector  

current; typical values  

Fig 4.

 

DC current gain as function of collector  

current; typical values  

BFU520W  

All information provided in this document is subject to legal disclaimers.  

© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

7 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢁꢆꢈꢉ  

DDDꢀꢁꢂꢁꢆꢈꢊ  

ꢀꢃ  

ꢎꢀ  

,

,

%

&

ꢉP$ꢊ  

ꢉP$ꢊ  

ꢀꢃ  

ꢎꢀ  

ꢀꢃ  

ꢀꢃ  

ꢎꢂ  

ꢎꢇ  

ꢎꢋ  

ꢀꢃ  

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢎꢂ  

ꢎꢇ  

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢀꢃ  

ꢀꢃ  

ꢀꢃ  

ꢀꢃ  

ꢃꢌꢇ  

ꢃꢌꢅ  

ꢃꢌꢋ  

ꢃꢌꢆ  

ꢃꢌꢍ  

ꢈꢉ9ꢊ  

ꢀ

ꢃꢌꢇ  

ꢃꢌꢅ  

ꢃꢌꢋ  

ꢃꢌꢆ  

ꢃꢌꢍ  

9 ꢈꢉ9ꢊ  

%(  

ꢀ

9

%(  

T

amb

= 25



C.  

T

amb

= 25



C.  

(1) V

CE

= 3.0 V  

(2) V

CE

= 8.0 V  

(1) V

CE

= 3.0 V  

(2) V

CE

= 8.0 V  

Fig 5.

 

Collector current as a function of base-emitter  

voltage; typical values  

Fig 6.

 

Base current as a function of base-emitter  

voltage; typical values  

DDDꢀꢁꢂꢁꢆꢈꢅ  

DDDꢀꢁꢂꢁꢆꢈꢆ  

ꢎꢄ  

ꢀꢃ  

%5  

ꢉ$ꢊ  

ꢅꢁꢃ  

,

&

&

ꢉI)ꢊ  

ꢎꢇ  

ꢎꢅ  

ꢎꢋ  

ꢎꢆ  

ꢀꢃ  

ꢅꢃꢃ  

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢉꢂꢊ  

ꢀꢃ  

ꢀꢃ  

ꢀꢃ  

ꢇꢆꢃ  

ꢇꢅꢃ  

ꢇꢄꢃ  

ꢀ

ꢀꢌꢄ  

ꢀꢌꢆ  

ꢁꢌꢁ  

ꢁꢌꢅ  

ꢈꢉ9ꢊ  

ꢂ

ꢃ

ꢁ

ꢄ

ꢅ

ꢆ

ꢀꢃ  

ꢀꢁ  

9

9

ꢈꢉ9ꢊ  

(%  

&%  

V

CE

= 3 V.  

I

C

= 0 mA; f = 1 MHz; T

amb

= 25



C.  

(1) T

amb

=



40



C  

(2) T

amb

= +25



C  

(3)  

T

amb

= +125



C  

Fig 7.

 

Reverse base current as a function of  

emitter-base voltage; typical values  

Fig 8.

 

Collector capacitance as a function of  

collector-base voltage; typical values  

BFU520W  

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. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

8 of 22  

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NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢁꢆꢇꢁ  

ꢀꢁ  

I

7

ꢉꢄꢊ  

ꢉꢂꢊ  

ꢉ*+]ꢊ  

ꢀꢃ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢆ

ꢅ

ꢄ

ꢁ

ꢃ

ꢃ

ꢄ

ꢆ

ꢀꢁ  

ꢀꢅ  

ꢁꢃ  

ꢈꢉP$ꢊ  

ꢁꢄ  

,

&

T

amb

= 25



C.  

(1) V

CE

= 3.3 V  

(2) V

CE

= 5.0 V  

(3)  

V

CE

= 8.0 V  

(4) V

CE

= 12.0 V  

Fig 9.

 

Transition frequency as a function of collector current; typical values  

DDDꢀꢁꢂꢁꢆꢇꢂ  

DDDꢀꢁꢂꢁꢆꢇꢈ  

ꢄꢃ  

ꢂꢃ  

ꢁꢃ  

ꢀꢃ  

ꢃ

ꢄꢃ  

ꢂꢃ  

ꢁꢃ  

ꢀꢃ  

ꢃ

*

ꢉG%ꢊ  

*

ꢉG%ꢊ  

06*  

06*  

*

*  

SꢉPD[ꢊ  

*

SꢉPD[ꢊ  

06*  

06*  

ꢁ

_

_

V

V  

ꢁꢀ  

_

ꢁ

_

_

V

V  

ꢁꢀ  

_

ꢃ

ꢇꢃꢃ  

ꢀꢃꢃꢃ  

ꢀꢇꢃꢃ  

ꢁꢃꢃꢃ  

ꢁꢇꢃꢃ  

Iꢈꢉ0+]ꢊ  

ꢂꢃꢃꢃ  

ꢃ

ꢇꢃꢃ  

ꢀꢃꢃꢃ  

ꢀꢇꢃꢃ  

ꢁꢃꢃꢃ  

ꢁꢇꢃꢃ  

ꢂꢃꢃꢃ  

Iꢈꢉ0+]ꢊ  

I

C

= 5 mA; V

CE

= 8 V; T

amb

= 25



C.  

I

C

= 10 mA; V

CE

= 8 V; T

amb

= 25



C.  

Fig 10.

 

Gain as a function of frequency; typical values

 

Fig 11.

 

Gain as a function of frequency; typical values  

BFU520W  

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. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

9 of 22  

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NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢁꢆꢇꢇ  

DDDꢀꢁꢂꢁꢆꢇꢃ  

ꢂꢃ  

ꢁ

ꢂꢃ  

_

_

V

V  

ꢁꢀ  

_

*

SꢉPD[ꢊ  

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢉG%ꢊ  

ꢉG%ꢊ  

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢁꢇ  

ꢁꢃ  

ꢀꢇ  

ꢀꢃ  

ꢇ

ꢁꢇ  

ꢁꢃ  

ꢀꢇ  

ꢀꢃ  

ꢇ

ꢉꢂꢊ  

ꢉꢄꢊ  

ꢉꢂꢊ  

ꢉꢄꢊ  

ꢉꢇꢊ  

ꢉꢇꢊ  

ꢃ

ꢃ

ꢃ

ꢇ

ꢀꢃ  

ꢀꢇ  

ꢁꢃ  

ꢈꢉP$ꢊ  

ꢁꢇ  

ꢃ

ꢇ

ꢀꢃ  

ꢀꢇ  

ꢁꢃ  

ꢁꢇ  

,

&

,

&

ꢈꢉP$ꢊ  

V

CE

= 8 V; T

amb

= 25



C.  

V

CE

= 8 V; T

amb

= 25



C.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

If K >1 then G

p(max)

= maximum power gain. If K < 1 then  

G

p(max)

= MS

G

.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

Fig 12.

 

Insertion power gain as a function of collector  

current; typical values  

Fig 13.

 

Maximum power gain as a function of collector  

current; typical values  

BFU520W  

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V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

10 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢁꢆꢇꢄ  

DDDꢀꢁꢂꢁꢆꢇꢉ  

ꢂꢃ  

ꢁ

ꢂꢃ  

_

_

V

V  

ꢁꢀ  

_

*

SꢉPD[ꢊ  

ꢉG%ꢊ  

ꢉG%ꢊ  

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢁꢇ  

ꢁꢃ  

ꢀꢇ  

ꢀꢃ  

ꢇ

ꢁꢇ  

ꢁꢃ  

ꢀꢇ  

ꢀꢃ  

ꢇ

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢉꢂꢊ  

ꢉꢄꢊ  

ꢉꢂꢊ  

ꢉꢄꢊ  

ꢉꢇꢊ  

ꢉꢇꢊ  

ꢃ

ꢃ

ꢃ

ꢁ

ꢄ

ꢅ

ꢆ

ꢀꢃ  

ꢀꢁ  

ꢀꢄ  

ꢃ

ꢁ

ꢄ

ꢅ

ꢆ

ꢀꢃ  

ꢀꢁ  

ꢀꢄ  

9

ꢈꢉ9ꢊ  

9

ꢈꢉ9ꢊ  

&(  

&(  

I

C

= 10 mA; T

amb

= 25



C.  

I

C

= 10 mA; T

amb

= 25



C.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

If K >1 then G

p(max)

= maximum power gain. If K < 1 then  

G

p(max)

= MS

G

.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

Fig 14.

 

Insertion power gain as a function of  

collector-emitter voltage; typical values  

Fig 15.

 

Maximum power gain as a function of  

collector-emitter voltage; typical values  

BFU520W  

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Product data sheet  

Rev. 1 — 13 January 2014  

11 of 22  

BFU520W  

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NPN wideband silicon RF transistor  

ꢀ

ꢃꢌꢇ  

ꢁ

ꢃꢌꢁ  

ꢇ

ꢀꢃ  

ꢃꢌꢁ  

ꢃꢌꢇ  

ꢀ

ꢁ

ꢇ

ꢀꢃ  

’

ꢃꢌꢃ  

ꢎꢀꢃ  

ꢎꢇ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢎꢃꢌꢁ  

ꢎꢁ  

ꢎꢃꢌꢇ  

ꢎꢀ  

DDDꢀꢁꢂꢁꢆꢇꢊ  

V

CE

= 8 V; 40 MHz



f



3 GHz.  

(1) I

C

= 5 mA  

(2)

C

= 10 mA  

I

Fig 16.

 

Input reflection coefficient (s

11

); typical values  

ꢀ

ꢃꢌꢇ  

ꢁ

ꢃꢌꢁ  

ꢇ

ꢀꢃ  

ꢃꢌꢁ  

ꢃꢌꢇ  

ꢀ

ꢁ

ꢇ

ꢀꢃ  

’

ꢃꢌꢃ  

ꢎꢀꢃ  

ꢎꢇ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢎꢃꢌꢁ  

ꢎꢁ  

ꢎꢃꢌꢇ  

ꢎꢀ  

DDDꢀꢁꢂꢁꢆꢇꢅ  

V

CE

= 8 V; 40 MHz



f



3 GHz.  

(1) I

C

= 5 mA  

(2) I

C

= 10 mA  

Fig 17.

 

Output reflection coefficient (s

22

); typical values  

BFU520W  

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. 2014. All rights reserved.  

Product data sheet  

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12 of 22  

BFU520W  

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NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢁꢆꢇꢆ  

DDDꢀꢁꢂꢁꢆꢃꢁ  

ꢁꢇ  

ꢀꢁ  

,

,

3

3

ꢂ

ꢂ  

3

3  

/ꢉꢀG%ꢊ  

R

ꢉG%Pꢊ  

ꢉG%Pꢊ  

ꢀꢃ  

ꢁꢀ  

ꢆ

ꢅ

ꢄ

ꢁ

ꢃ

ꢀꢋ  

ꢀꢂ  

ꢍ

ꢉꢂꢊ  

ꢉꢁꢊ  

ꢉꢂꢊ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢉꢀꢊ  

ꢇ

ꢃ

ꢇ

ꢀꢃ  

ꢀꢇ  

ꢁꢃ  

ꢈꢉP$ꢊ  

ꢁꢇ  

ꢃ

ꢇ

ꢀꢃ  

ꢀꢇ  

ꢁꢃ  

ꢁꢇ  

,

&

,

&

ꢈꢉP$ꢊ  

V

CE

= 8 V; T

amb

= 25



C.  

V

CE

= 8 V; T

amb

= 25



C.  

(1) f

1

= 433 MHz; f

2

= 434 MHz  

(2) f

1

= 900 MHz; f

2

= 901 MHz  

(3) f

1

= 1800 MHz; f

2

= 1801 MHz  

(1) f

 

= 433 MHz  

(2) f

 

= 900 MHz  

(3) f

 

= 1800 MHz  

Fig 18.

 

Output third-order intercept point as a function  

of collector current; typical values  

Fig 19.

 

Output power at 1 dB gain compression as a  

function of collector current; typical values  

DDDꢀꢁꢂꢁꢆꢃꢂ  

DDDꢀꢁꢂꢁꢆꢃꢈ  

ꢁꢄ  

ꢀꢁ  

,

,

3

3

ꢂ

ꢂ  

3

3  

/ꢉꢀG%ꢊ  

R

ꢉG%Pꢊ  

ꢉG%Pꢊ  

ꢀꢃ  

ꢉꢂꢊ  

ꢁꢁ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢆ

ꢅ

ꢄ

ꢁ

ꢃ

ꢉꢂꢊ  

ꢁꢃ  

ꢀꢆ  

ꢀꢅ  

ꢀꢄ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢃ

ꢁ

ꢄ

ꢅ

ꢆ

ꢀꢃ  

ꢀꢁ  

ꢈꢉ9ꢊ  

ꢀꢄ  

ꢃ

ꢁ

ꢄ

ꢅ

ꢆ

ꢀꢃ  

ꢀꢁ  

ꢈꢉ9ꢊ  

ꢀꢄ  

9

9

&(  

&(  

I

C

= 10 mA; T

amb

= 25



C.  

I

C

= 10 mA; T

amb

= 25



C.  

(1) f

1

= 433 MHz; f

2

= 434 MHz  

(2) f

1

= 900 MHz; f

2

= 901 MHz  

(3) f

1

= 1800 MHz; f

2

= 1801 MHz  

(1) f

 

= 433 MHz  

(2) f

 

= 900 MHz  

(3) f

 

= 1800 MHz  

Fig 20.

 

Output third-order intercept point as a function  

of collector-emitter voltage; typical values  

Fig 21.

 

Output power at 1 dB gain compression as a  

function of collector-emitter voltage;  

typical values  

BFU520W  

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V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

13 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢁꢆꢃꢇ  

DDDꢀꢁꢂꢁꢆꢃꢃ  

ꢀꢌꢅ  

PLQ  

ꢉG%ꢊ  

ꢀꢌꢅ  

1

1

)

)  

1

1

)

)  

PLQ  

ꢉG%ꢊ  

ꢉꢆꢊ  

ꢉꢋꢊ  

ꢀꢌꢁ  

ꢀꢌꢁ  

ꢃꢌꢆ  

ꢃꢌꢄ  

ꢃ

ꢉꢅꢊ  

ꢉꢇꢊ  

ꢉꢄꢊ  

ꢉꢂꢊ  

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢉꢂꢊ  

ꢃꢌꢆ  

ꢃꢌꢄ  

ꢃ

ꢉꢁꢊ  

ꢉꢀꢊ  

ꢎꢀ  

ꢁ

ꢀꢃ  

ꢀ

ꢀꢃ  

ꢀꢃ  

ꢃ

ꢇꢃꢃ  

ꢀꢃꢃꢃ  

ꢀꢇꢃꢃ  

ꢁꢃꢃꢃ  

ꢁꢇꢃꢃ  

,

&

ꢈꢉP$ꢊ  

Iꢈꢉ0+]ꢊ  

V

CE

= 8 V; T

amb

= 25



C;



S

=



opt  

.

V

CE

= 8 V; T

amb

= 25



C;



S

=



opt

.  

(1) f

 

= 433 MHz  

(2) f

 

= 900 MHz  

(3) f

 

= 1800 MHz  

(1) I

C

= 1 mA  

(2) I

C

= 2 mA  

(3)  

I

C

= 3 mA  

(4) I

C

= 5 mA  

(5) I

C

= 8 mA  

(6)  

I

C

= 10 mA  

(7) I

C

= 15 mA  

(8) I

C

= 20 mA  

Fig 22.

 

Minimum noise figure as a function of  

collector current; typical values  

Fig 23.

 

Minimum noise figure as a function of  

frequency; typical values  

BFU520W  

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V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

14 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

ꢀ

ꢃꢌꢇ  

ꢁ

ꢉꢀꢊ  

ꢉꢁꢊ  

ꢃꢌꢁ  

ꢇ

ꢉꢂꢊ  

ꢉꢄꢊ  

ꢀꢃ  

ꢃꢌꢁ  

ꢃꢌꢇ  

ꢀ

ꢉꢅꢊ  

ꢁ

ꢇ

ꢀꢃ  

’

ꢉꢇꢊ  

ꢃꢌꢃ  

ꢉꢋꢊ  

ꢎꢀꢃ  

ꢎꢇ  

ꢉꢆꢊ  

ꢎꢃꢌꢁ  

ꢎꢁ  

ꢎꢃꢌꢇ  

ꢎꢀ  

DDDꢀꢁꢂꢁꢆꢃꢄ  

V

CE

= 8 V; 400 MHz



f



2 GHz.  

(1) I

C

= 1 mA  

(2)

C

= 2 mA  

I

(3) I

C

= 3 mA  

(4) I

C

= 5 mA  

(5)  

I

C

= 8 mA  

(6) I

C

= 10 mA  

(7) I

C

= 15 mA  

(8)  

I

C

= 20 mA  

Fig 24.

 

Optimum reflection coefficient (



opt

); typical values  

10. Application information  

More information about the following application example can be found in the application  

notes. See

Section 5 “Design support”

.  

The following application example can be implemented using the evaluation kit. See  

Section 3 “Ordering information”

for the order type number.  

The following application example can be simulated using the simulation package. See  

Section 5 “Design support”

.  

BFU520W  

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© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

15 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

10.1 Application

 

example: 433 ISM band LNA  

433 ISM band LNA, optimized for low noise.  

More detailed information of the application example can be found in the application note:  

AN11421.  

9

ꢈꢂꢌꢅꢈ9  

&&  

ꢇꢌꢅꢈQ)  

ꢁꢁꢃꢈS)  

ꢁꢁꢈȍ  

ꢆꢁꢈS)  

ꢀꢃꢈQ+  

ꢂꢌꢂꢈNȍ  

ꢆꢌꢁꢈNȍ  

0XUDWD  

/4:ꢈVHULHV  

ꢁꢁꢃꢈS)  

ꢁꢌꢁꢈȍ  

ꢁꢋꢈS)  

ꢂꢂꢈQ+  

0XUDWD  

/4:ꢈVHULHV  

5)ꢈRXWSXW  

ꢉ60$ꢊ  

ꢁꢁꢈS)  

5)ꢈLQSXW  

ꢉ60$ꢊ  

’87  

ꢀꢇꢈS)  

DDDꢀꢁꢂꢁꢃꢃꢊ  

Fig 25.

 

Schematic 433 MHz ISM band LNA  

Table 10.

 

Application performance data at 433 MHz  

I

CC

= 7 mA; V

CC

= 3.6 V  

Symbol Parameter  

Conditions  

Min Typ Max Unit  



s

21



2  

NF  

insertion power gain  

–

–

–

18  

1.0  

11  

–

–

–

dB  

noise figure  

dB  

IP3

o  

output third-order  

intercept point  

f

1

= 433.1 MHz; f

2

= 433.2 MHz;  

P

i

=



30 dBm per carrier  

dBm  

BFU520W  

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V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

16 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

10.2 Application

 

example: 866 ISM band LNA  

866 ISM band LNA, optimized for low noise.  

More detailed information of the application example can be found in the application note:  

AN11422.  

9

ꢈꢂꢌꢅꢈ9  

&&  

ꢇꢌꢅꢈQ)  

ꢁꢁꢃꢈS)  

ꢁꢁꢈȍ  

ꢁꢋꢈS)  

ꢆꢌꢁꢈQ+  

ꢂꢌꢂꢈNȍ  

ꢆꢌꢁꢈNȍ  

0XUDWD  

/4:ꢈVHULHV  

ꢁꢁꢃꢈS)  

ꢁꢌꢁꢈȍ  

ꢀꢇꢈQ+  

ꢅꢌꢆꢈS)  

0XUDWD  

5)ꢈRXWSXW  

ꢉ60$ꢊ  

/4:ꢈVHULHV  

ꢀꢆꢈS)  

5)ꢈLQSXW  

ꢉ60$ꢊ  

’87  

ꢂꢈS)  

DDDꢀꢁꢂꢁꢃꢄꢈ  

Fig 26.

 

Schematic 866 MHz ISM band LNA  

Table 11.

 

Application performance data at 866 MHz  

I

Symbol Parameter  

Conditions  

Min Typ Max Unit  



s

21



2  

NF  

insertion power gain  

–

–

–

15  

1.1  

14  

–

–

–

dB  

noise figure  

dB  

IP3

o  

output third-order  

intercept point  

f

1

= 866.1 MHz; f

2

= 866.2 MHz;  

P

i

=



30 dBm per carrier  

dBm  

BFU520W  

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© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

17 of 22  

BFU520W  

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NPN wideband silicon RF transistor  

11. Package

 

outline  

3ODVWLFꢃVXUIDFHꢆPRXQWHGꢃSDFNDJHꢇꢃꢀꢃOHDGV  

627ꢀꢁꢀ  

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%

(

$

;

+

Y

0

 

$

(

ꢀ

4

$

$

ꢀ

F

ꢂ

ꢁ

/

S

H

E

Z

0

%  

ꢀ

S

H

GHWDLOꢈ;  

ꢃ

ꢀ

ꢁꢈPP  

VFDOH  

‘,0(16,216ꢃꢄPPꢃDUHꢃWKHꢃRULJLQDOꢃGLPHQVLRQVꢅ  

$

PD[  

ꢂꢃ  

$

81,7  

E

F

‘

(

H

H

+

(

/

S

4

Y

Z

S

ꢂ

ꢀꢌꢀꢈ  

ꢃꢌꢆ  

ꢃꢌꢄꢈ  

ꢃꢌꢂ  

ꢃꢌꢁꢇꢈ ꢁꢌꢁꢈ  

ꢃꢌꢀꢃ ꢀꢌꢆ  

ꢀꢌꢂꢇꢈ  

ꢀꢌꢀꢇ  

ꢁꢌꢁꢈ  

ꢁꢌꢃ  

ꢃꢌꢄꢇꢈ  

ꢃꢌꢀꢇ  

ꢃꢌꢁꢂꢈ  

ꢃꢌꢀꢂ  

PP  

ꢃꢌꢀ  

ꢀꢌꢂ  

ꢃꢌꢅꢇ  

ꢃꢌꢁ  

ꢃꢌꢁ  

ꢃ5()(5(1&(6  

ꢃ-(‘(& ꢃ-(,7$  

6&ꢎꢋꢃ  

(8523($1ꢃ  

352-(&7,21  

287/,1(ꢃ  

9(56,21  

,668(ꢃ’$7(  

ꢃ,(&  

ꢃꢄꢎꢀꢀꢎꢃꢄꢈ  

ꢃꢅꢎꢃꢂꢎꢀꢅ  

ꢈ627ꢂꢁꢂ  

ꢈ

Fig 27.

 

Package outline SOT323  

BFU520W  

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© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

18 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

12. Handling information  

CAUTION  

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  

electrostatic sensitive devices.  

Such precautions are described in the

ANSI/ESD S20.20

,

IEC/ST 61340-5

,

JESD625-A

or  

equivalent standards.  

13. Abbreviations  

Table 12.

 

Abbreviations  

Acronym  

AEC  

Description  

Automotive Electronics Council  

Industrial, Scientific and Medical  

Low-Noise Amplifier  

ISM  

LNA  

MSG  

NPN  

Maximum Stable Gain  

Negative-Positive-Negative  

SubMiniature version A  

SMA  

14. Revision history  

Table 13.

 

Revision history  

Document ID  

Release date  

20140113  

Data sheet status  

Change notice  

Supersedes  

BFU520W v.1  

Product data sheet  

–

–

BFU520W  

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V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

19 of 22  

BFU520W  

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NPN wideband silicon RF transistor  

15. Legal information  

15.1 Data

 

sheet status  

Document status

[1][2]  

Product status

[3]  

Development  

Definition  

Objective [short] data sheet  

This document contains data from the objective specification for product development.  

This document contains data from the preliminary specification.  

This document contains the product specification.  

Preliminary [short] data sheet

 

Qualification  

Product [short] data sheet

 

Production  

[1]  

[2]  

[3]  

Please consult the most recently issued document before initiating or completing a design.  

The term ‘short data sheet’ is explained in section “Definitions”.  

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  

information is available on the Internet at URL

.  

Applications —

Applications that are described herein for any of these  

15.2 Definitions  

products are for illustrative purposes only. NXP Semiconductors makes no  

representation or warranty that such applications will be suitable for the  

specified use without further testing or modification.  

Draft —

The document is a draft version only. The content is still under  

internal review and subject to formal approval, which may result in  

modifications or additions. NXP Semiconductors does not give any  

representations or warranties as to the accuracy or completeness of  

information included herein and shall have no liability for the consequences of  

use of such information.  

Customers are responsible for the design and operation of their applications  

and products using NXP Semiconductors products, and NXP Semiconductors  

accepts no liability for any assistance with applications or customer product  

design. It is customer’s sole responsibility to determine whether the NXP  

Semiconductors product is suitable and fit for the customer’s applications and  

products planned, as well as for the planned application and use of  

customer’s third party customer(s). Customers should provide appropriate  

design and operating safeguards to minimize the risks associated with their  

applications and products.  

Short data sheet —

A short data sheet is an extract from a full data sheet  

with the same product type number(s) and title. A short data sheet is intended  

for quick reference only and should not be relied upon to contain detailed and  

full information. For detailed and full information see the relevant full data  

sheet, which is available on request via the local NXP Semiconductors sales  

office. In case of any inconsistency or conflict with the short data sheet, the  

full data sheet shall prevail.  

NXP Semiconductors does not accept any liability related to any default,  

damage, costs or problem which is based on any weakness or default in the  

customer’s applications or products, or the application or use by customer’s  

third party customer(s). Customer is responsible for doing all necessary  

testing for the customer’s applications and products using NXP  

Semiconductors products in order to avoid a default of the applications and  

the products or of the application or use by customer’s third party  

customer(s). NXP does not accept any liability in this respect.  

Product specification —

The information and data provided in a Product  

data sheet shall define the specification of the product as agreed between  

NXP Semiconductors and its customer, unless NXP Semiconductors and  

customer have explicitly agreed otherwise in writing. In no event however,  

shall an agreement be valid in which the NXP Semiconductors product is  

deemed to offer functions and qualities beyond those described in the  

Product data sheet.  

Limiting values —

Stress above one or more limiting values (as defined in  

the Absolute Maximum Ratings System of IEC 60134) will cause permanent  

damage to the device. Limiting values are stress ratings only and (proper)  

operation of the device at these or any other conditions above those given in  

the Recommended operating conditions section (if present) or the  

Characteristics sections of this document is not warranted. Constant or  

repeated exposure to limiting values will permanently and irreversibly affect  

the quality and reliability of the device.  

15.3 Disclaimers  

Limited warranty and liability —

Information in this document is believed to  

be accurate and reliable. However, NXP Semiconductors does not give any  

representations or warranties, expressed or implied, as to the accuracy or  

completeness of such information and shall have no liability for the  

consequences of use of such information. NXP Semiconductors takes no  

responsibility for the content in this document if provided by an information  

source outside of NXP Semiconductors.  

Terms and conditions of commercial sale —

NXP Semiconductors  

products are sold subject to the general terms and conditions of commercial  

sale, as published at

, unless otherwise  

agreed in a valid written individual agreement. In case an individual  

agreement is concluded only the terms and conditions of the respective  

agreement shall apply. NXP Semiconductors hereby expressly objects to  

applying the customer’s general terms and conditions with regard to the  

purchase of NXP Semiconductors products by customer.  

In no event shall NXP Semiconductors be liable for any indirect, incidental,  

punitive, special or consequential damages (including – without limitation – lost  

profits, lost savings, business interruption, costs related to the removal or  

replacement of any products or rework charges) whether or not such  

damages are based on tort (including negligence), warranty, breach of  

contract or any other legal theory.  

No offer to sell or license —

Nothing in this document may be interpreted or  

construed as an offer to sell products that is open for acceptance or the grant,  

conveyance or implication of any license under any copyrights, patents or  

other industrial or intellectual property rights.  

Notwithstanding any damages that customer might incur for any reason  

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  

customer for the products described herein shall be limited in accordance  

with the

T

e

rms and conditions of commercial sale

of NXP Semiconductors.  

Export control —

This document as well as the item(s) described herein  

may be subject to export control regulations. Export might require a prior  

authorization from competent authorities.  

Right to make changes —

NXP Semiconductors reserves the right to make  

changes to information published in this document, including without  

limitation specifications and product descriptions, at any time and without  

notice. This document supersedes and replaces all information supplied prior  

to the publication hereof.  

Quick reference data —

The Quick reference data is an extract of the  

product data given in the Limiting values and Characteristics sections of this  

document, and as such is not complete, exhaustive or legally binding.  

BFU520W  

All information provided in this document is subject to legal disclaimers.  

© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

20 of 22  

BFU520W  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Suitability for use in automotive applications —

This NXP  

Semiconductors product has been qualified for use in automotive  

applications. Unless otherwise agreed in writing, the product is not designed,  

authorized or warranted to be suitable for use in life support, life-critical or  

safety-critical systems or equipment, nor in applications where failure or  

malfunction of an NXP Semiconductors product can reasonably be expected  

to result in personal injury, death or severe property or environmental  

damage. NXP Semiconductors and its suppliers accept no liability for  

inclusion and/or use of NXP Semiconductors products in such equipment or  

applications and therefore such inclusion and/or use is at the customer’s own  

risk.  

Translations —

A non-English (translated) version of a document is for  

reference only. The English version shall prevail in case of any discrepancy  

between the translated and English versions.  

15.4 Trademarks  

Notice: All referenced brands, product names, service names and trademarks  

are the property of their respective owners.  

16. Contact information  

For more information, please visit:

For sales office addresses, please send an email to:

BFU520W  

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© NXP B.

V

. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 13 January 2014  

21 of 22  

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NXP Semiconductors  

NPN wideband silicon RF transistor  

17. Contents  

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

1.1  

1.2  

1.3  

1.4  

General description

 

. . . . . . . . . . . . . . . . . . . . .

 

1  

Features and benefit

s

. . . . . . . . . . . . . . . . . . . .

 

1  

Applications .

 

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

Quick reference data

 

. . . . . . . . . . . . . . . . . . . .

 

1  

2

Pinning informatio

n

. . . . . . . . . . . . . . . . . . . . . .

 

2  

Ordering informatio

n

. . . . . . . . . . . . . . . . . . . . .

 

2  

Markin

g

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2  

Design support

 

. . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Recommended operating conditions. . . . . . . .

 

3  

Thermal characteristics

 

. . . . . . . . . . . . . . . . . .

 

4  

Characteristic

s

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

7  

3

4

5

6

7

8

9

9.1  

10  

10.1  

10.2  

Application information. . . . . . . . . . . . . . . . . .

 

15  

Application example: 433 ISM band LN

A

. . . .

 

1

6  

Application example: 866 ISM band LN

A

. . . .

 

1

7  

11  

12  

13  

14  

Package outline . . . . . . . . . . . . . . . . . . . . . . . .

 

18  

Handling information. . . . . . . . . . . . . . . . . . . .

 

19  

Abbreviation

s

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

9  

Revision histor

y

. . . . . . . . . . . . . . . . . . . . . . . .

 

1

9  

15  

Legal information. . . . . . . . . . . . . . . . . . . . . . .

 

20  

Data sheet status . . . . . . . . . . . . . . . . . . . . . .

 

20  

Definition

s

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2

0  

Disclaimer

s

. . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2

0  

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .

 

21  

15.1  

15.2  

15.3  

15.4  

16  

17  

Contact information. . . . . . . . . . . . . . . . . . . . .

 

21  

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

22  

Please be aware that important notices concerning this document and the product(s)  

described herein, have been included in section ‘Legal information’.  

© NXP B.V.

 

2014.  

All rights reserved.  

For sales office addresses, please send an email to: salesaddresses@nxp.com  

Date of release: 13 January 2014  

Document identifier: BFU520W