NXP-Semicon-BFU590QX

ꢁ

BFU590Q  

ꢀ

7

2

6

NPN wideband silicon RF transistor  

Rev. 1 — 28 April 2014  

Product data sheet  

1. Product

 

profile  

1.1 General

 

description  

NPN silicon microwave transistor for high speed, medium power applications in a plastic,  

3-pin SOT89 package.  

The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium  

power applications up to 2 GHz.  

1.2 Features

 

and benefits  



Medium power, high linearity, high breakdown voltage RF transistor  



AEC-Q101 qualified  



Maximum stable gain 11 dB at 900 MHz  



P

L(1dB)

22 dBm at 900 MHz  



8 GHz f

T

silicon technology  

1.3 Applications  



Automotive applications  



Broadband amplifiers  



Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)  



Large signal amplifiers for ISM applications  

1.4 Quick

 

reference data  

Table 1.  

Quick reference data  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

open emitter  

open base  

Min Typ

 

Max Unit  

V

CB  

V

CE  

collector-base voltage  

collector-emitter voltage  

–

–

24  

12  

24  

2

V

V

V

V

–

–

shorted base  

open collector  

–

–

V

EB  

I

C  

emitter-base voltage  

collector current  

–

–

–

80  

–

200 mA  

2000 mW  

130  

[1]  

P

tot  

h

FE  

C

c  

total power dissipation  

DC current gain  

T

sp



90



C  

–

I

C

= 80 mA; V

CE

= 8 V  

V

CB

= 8 V; f = 1 MHz  

I

C

= 80 mA; V

CE

= 8 V; f = 900 MHz  

60  

–

95  

2.0  

8.0  

collector capacitance  

transition frequency  

–

–

pF  

f

T  

–

GHz  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 1.  

Quick reference data

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

[2]  

G

p(max)  

P

L(1dB)  

maximum power gain  

I

C

= 80 mA; V

CE

= 8 V; f = 900 MHz  

–

–

11  

22  

–

–

dB  

output power at 1 dB gain  

compression  

I

C

= 80 mA; V

CE

= 8 V; Z

S

= Z

L

= 50



;  

f = 900 MHz  

dBm  

[1] T

sp

is the temperature at the solder point of the collector lead.  

[2] If

 

K > 1 then G

p(max)

is the maximum power gain. If K



1 then G

p(max)

= MS

G

.  

2. Pinning

 

information  

Table 2.  

Discrete pinning  

Description  

emitter  

Pin  

1

Simplified outline  

Graphic symbol  

ꢁ

2

collector  

ꢀ

3

base  

ꢂ

ꢀ

ꢁ

ꢂ

DDDꢀꢁꢂꢂꢃꢄꢁ  

3. Ordering

 

information  

Table 3.  

Type number

 

Package  

Name Description  

Ordering information  

Version  

SOT89  

–

BFU590Q  

OM7965  

–

–

plastic surface-mounted package; exposed die pad with good heat transfer; 3 leads  

Customer evaluation kit for BFU580Q and BFU590Q

[1]  

[1] The

 

customer evaluation kit contains the following:  

a) Unpopulated

 

RF amplifier Printed-Circuit Board (PCB)  

b) Unpopulated

 

RF amplifier Printed-Circuit Board (PCB) with emitter degeneration  

c) Four

 

SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)  

d) BFU580Q

 

and BFU590Q samples  

e) USB

 

stick with data sheets, application notes, models, S-parameter and noise files  

4. Marking  

Table 4.  

Marking  

Type number  

Marking  

BFU590Q  

S59  

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

2 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

5. Design

 

support  

Table 5.  

Available design support  

Download from the BFU590Q product information page on

.  

Support item  

Available  

yes  

Remarks  

Device models for Agilent EEsof EDA ADS  

SPICE model  

Based on Mextram device model.  

yes  

Based on Gummel-Poon device  

model.  

S-parameters  

yes  

yes  

yes  

yes  

Customer evaluation kit  

Solder pattern  

See

Section 3

and

Section 10

.  

Application notes  

See

Section 10.1

and

Section 10.2

.  

6. Limiting

 

values  

Table 6.  

Limiting values  

In accordance with the Absolute Maximum Rating System (IEC 60134).  

Symbol Parameter  

Conditions  

open emitter  

open base  

Min Max  

Unit  

V

V

CB  

V

CE  

collector-base voltage  

–

–

–

–

–

30  

16  

30  

3

collector-emitter voltage  

V

shorted base  

open collector  

V

V

EB  

I

C  

emitter-base voltage  

collector current  

V

300  

mA  

T

stg  

V

ESD  

storage temperature  

electrostatic discharge voltage  



65 +150



C  

Human Body Model (HBM) According to JEDEC  

standard 22-A114E  

–



250  

V

Charged Device Model (CDM) According to  

JEDEC standard 22-C101B  

–



2  

kV  

7. Recommended

 

operating conditions  

Table 7.  

Symbol  

V

CB  

Characteristics  

Parameter  

Conditions  

open emitter  

open base  

Min Typ Max  

Unit  

V

collector-base voltage  

collector-emitter voltage  

–

–

–

–

–

–

–

–

–

24  

V

CE  

–

12  

V

shorted base  

open collector  

–

24  

V

V

EB  

I

C  

emitter-base voltage  

collector current  

–

2

V

–

200  

20  

mA  

dBm  



C  

mW  

P

i  

input power  

Z

S

= 50

  

–

T

j  

junction temperature  

total power dissipation  



40  

+150  

2000  

[1]  

P

tot  

T

sp



90



C  

–

[1] T

sp

is the temperature at the solder point of the collector lead.  

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

3 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

8. Thermal

 

characteristics  

Table 8.  

Thermal characteristics  

Symbol Parameter  

Conditions  

Typ Unit  

[1]  

R

th(j-sp)  

thermal resistance from junction to solder point  

30  

K/W  

[1] T

sp

is the temperature at the solder point of the collector lead.  

T

sp

has the following relation to the ambient temperature T

amb  

T

sp

= T

amb

+ P



R

th(sp-a)  

:

With P being the power dissipation and R

th(sp-a)

being the thermal resistance between the solder point and  

ambient. R

th(sp-a)

is determined by the heat transfer properties in the application.  

The heat transfer properties are set by the application board materials, the board layout and the  

environment e.g. housing.  

DDDꢀꢁꢂꢅꢆꢇꢈ  

ꢁꢈꢃꢃ  

3

3  

WRW  

ꢊP:ꢋ  

ꢁꢃꢃꢃ  

ꢂꢄꢃꢃ  

ꢂꢁꢃꢃ  

ꢇꢃꢃ  

ꢈꢃꢃ  

ꢃ

ꢃ

ꢀꢃ  

ꢄꢃ  

ꢅꢃ  

ꢂꢁꢃ  

ꢂꢆꢃ  

ꢂꢇꢃ  

7

VS  

ꢉꢊƒ&ꢋ  

Fig 1.

 

Power derating curve  

9. Characteristics  

Table 9.  

Characteristics  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

V

(BR)CBO

collector-base breakdown voltage  

V

(BR)CEO

collector-emitter breakdown voltage  

I

C

= 100 nA; I

E

= 0 mA  

I

C

= 150 nA; I

B

= 0 mA  

24  

12  

–

–

–

–

V

V

–

I

C  

collector current  

80  

<1  

200 mA  

I

CBO  

h

FE  

C

e  

C

re  

C

c  

collector-base cut-off current  

DC current gain  

I

E

= 0 mA; V

CB

= 8 V  

I

C

= 80 mA; V

CE

= 8 V  

V

EB

= 0.5 V; f = 1 MHz  

V

CE

= 8 V; f = 1 MHz  

V

CB

= 8 V; f = 1 MHz  

–

–

nA  

60 95  

130  

emitter capacitance  

feedback capacitance  

collector capacitance  

transition frequency  

–

–

–

–

3.6  

1.3  

2

–

–

–

–

pF  

pF  

pF  

f

T  

I

C

= 50 mA; V

CE

= 8 V; f = 900 MHz  

8.0  

GHz  

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

4 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 9.  

Characteristics

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

[1]  

G

p(max)  

maximum power gain  

f = 433 MHz; V

CE

= 8 V  

I

C

= 10 mA  

–

–

–

17  

–

dB  

dB  

dB  

I

C

= 50 mA  

17.5 –  

17.5 –  

I

C

= 80 mA  

[1]  

[1]  

f = 900 MHz; V

CE

= 8 V  

I

C

= 10 mA  

–

–

–

11  

11  

11  

–

–

–

dB  

dB  

dB  

I

C

= 50 mA  

I

C

= 80 mA  

f = 1800 MHz; V

CE

= 8 V  

I

C

= 10 mA  

–

–

–

6

–

–

–

dB  

dB  

dB  

I

C

= 50 mA  

6.5  

6.5  

I

C

= 80 mA  



s

21



2  

insertion power gain  

f = 433 MHz; V

CE

= 8 V  

I

C

= 10 mA  

–

–

–

14.5 –  

dB  

dB  

dB  

I

C

= 50 mA  

16  

16  

–

–

I

C

= 80 mA  

f = 900 MHz; V

CE

= 8 V  

I

C

= 10 mA  

–

–

–

9

–

–

–

dB  

dB  

dB  

I

C

= 50 mA  

10  

10  

I

C

= 80 mA  

f = 1800 MHz; V

CE

= 8 V  

I

C

= 10 mA  

–

–

–

3.5  

4.5  

4.5  

–

–

–

dB  

dB  

dB  

I

C

= 50 mA  

I

C

= 80 mA  

P

L(1dB)  

output power at 1 dB gain compression

 

f = 433 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 50 mA  

–

–

20.5 –  

dBm  

dBm  

I

C

= 80 mA  

23  

–

f = 900 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 50 mA  

–

–

20  

22  

–

–

dBm  

dBm  

I

C

= 80 mA  

f = 1800 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 50 mA  

I

C

= 80 mA  

–

–

19.5 –  

22  

dBm  

dBm  

–

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

5 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 9.  

Characteristics

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

IP3

o  

output third-order intercept point  

f

1

= 433 MHz; f

2

= 434 MHz; V

CE

= 8 V;  

Z

S

= Z

L

= 50

  

I

C

= 50 mA  

I

C

= 80 mA  

–

–

30  

–

dBm  

dBm  

32.5 –  

f

1

= 900 MHz; f

2

= 901 MHz; V

CE

= 8 V;  

Z

S

= Z

L

= 50

  

I

C

= 50 mA  

I

C

= 80 mA  

–

–

29.5 –  

31.5 –  

dBm  

dBm  

f

1

= 1800 MHz; f

2

= 1801 MHz;  

V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 50 mA  

I

C

= 80 mA  

–

–

29  

–

dBm  

dBm  

31.5 –  

[1] If

 

K > 1 then G

p(max)

is the maximum power gain. If K



1 then G

p(max)

= MS

G

.  

9.1 Graphs  

DDDꢀꢁꢂꢂꢄꢉꢅ  

ꢀꢄ  

,

&

ꢊP$ꢋ  

ꢊꢌꢋ  

ꢊꢄꢋ  

ꢊꢆꢋ  

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢀꢃ  

ꢁꢈ  

ꢂꢇ  

ꢂꢁ  

ꢄ

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢃ

ꢃ

ꢂ

ꢁ

ꢀ

ꢈ

ꢆ

ꢄ

ꢌ

ꢇ

9

ꢉꢊ9ꢋ  

&(  

T

amb

= 25



C.  

(1) I

B

= 25



A  

(2)  

I

B

= 75



A  

(3) I

B

= 125



A  

(4) I

B

= 175



A  

(5)  

I

B

= 225



A  

(6) I

B

= 275



A  

(7) I

B

= 325



A  

Fig 2.

 

Collector current as a function of collector-emitter voltage; typical values  

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

6 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢅꢆꢇꢄ  

DDDꢀꢁꢂꢅꢆꢇꢇ  

ꢂꢆꢃ  

)(  

ꢂꢆꢃ  

K

)(  

K

ꢊꢀꢋ  

ꢂꢁꢆ  

ꢂꢁꢆ  

ꢂꢃꢃ  

ꢌꢆ  

ꢆꢃ  

ꢁꢆ  

ꢃ

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢂꢃꢃ  

ꢌꢆ  

ꢆꢃ  

ꢁꢆ  

ꢃ

ꢃ

ꢆ

ꢂꢃ  

ꢂꢆ  

ꢁꢃ  

ꢁꢆ  

ꢀꢃ  

ꢃ

ꢁꢃ  

ꢈꢃ  

ꢄꢃ  

ꢇꢃ  

ꢂꢃꢃ  

,

&

ꢉꢊP$ꢋ  

,

&

ꢉꢊP$ꢋ  

T

amb

= 25



C.  

V

CE

= 8 V.  

(1) V

CE

= 3.0 V  

(2) V

CE

= 8.0 V  

(1) T

amb

=



40



C  

(2) T

amb

= +25



C  

(3)  

T

amb

= +125



C  

Fig 3.

 

DC current gain as a function of collector  

current; typical values  

Fig 4.

 

DC current gain as a function of collector  

current; typical values  

DDDꢀꢁꢂꢂꢄꢉꢆ  

DDDꢀꢁꢂꢂꢄꢉꢉ  

ꢂꢃ  

,

,

%

ꢊP$ꢋ  

&

ꢊP$ꢋ  

ꢂꢃ  

ꢎꢂ  

ꢎꢂ  

ꢎꢀ  

ꢎꢆ  

ꢎꢌ  

ꢂꢃ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢂꢃ  

ꢂꢃ  

ꢂꢃ  

ꢂꢃ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢎꢀ  

ꢂꢃ  

ꢎꢆ  

ꢃꢍꢆ  

ꢂꢃ  

ꢃꢍꢄ  

ꢃꢍꢌ  

ꢃꢍꢇ  

ꢃꢍꢅ  

ꢉꢊ9ꢋ  

ꢂꢍꢃ  

ꢃꢍꢆ  

ꢃꢍꢄ  

ꢃꢍꢌ  

ꢃꢍꢇ  

ꢃꢍꢅ  

9 ꢉꢊ9ꢋ  

%(  

ꢂꢍꢃ  

9

%(  

T

amb

= 25



C.  

(1) V

CE

= 3.0 V  

(2)

CE

= 8.0 V  

T

(1) V

CE

= 3.0 V  

(2)

CE

= 8.0 V  

V

V

Fig 5.

 

Collector current as a function of base-emitter  

voltage; typical values  

Fig 6.

 

Base current as a function of base-emitter  

voltage; typical values  

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

7 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢅꢉꢁꢁ  

DDDꢀꢁꢂꢂꢄꢉꢃ  

ꢎꢀ  

ꢂꢃ  

%5  

ꢊ$ꢋ  

ꢁꢍꢆ  

ꢁ

,

&

F

ꢊS)ꢋ  

ꢎꢈ  

ꢎꢆ  

ꢎꢄ  

ꢎꢌ  

ꢎꢇ  

ꢂꢃ  

ꢂꢃ  

ꢂꢃ  

ꢂꢃ  

ꢂꢃ  

ꢂꢍꢆ  

ꢂ

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢃꢍꢆ  

ꢃ

ꢂ

ꢂꢍꢈ  

ꢂꢍꢇ  

ꢁꢍꢁ  

ꢁꢍꢄ  

ꢉꢊ9ꢋ  

ꢀ

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

9

9

ꢉꢊ9ꢋ  

(%  

&%  

V

CE

= 3 V.  

I

C

= 0 mA; f = 1 MHz; T

amb

= 25



C.  

(1) T

amb

=



40



C  

(2) T

amb

= +25



C  

(3)  

T

amb

= +125



C  

Fig 7.

 

Reverse base current as a function of  

emitter-base voltage; typical values  

Fig 8.

 

Collector capacitance as a function of  

collector-base voltage; typical values  

DDDꢀꢁꢂꢂꢄꢉꢊ  

ꢂꢃ  

I

7

ꢊ*+]ꢋ  

ꢇ

ꢄ

ꢈ

ꢁ

ꢃ

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢃ

ꢁꢃ  

ꢈꢃ  

ꢄꢃ  

ꢇꢃ  

ꢂꢃꢃ  

,

&

ꢉꢊP$ꢋ  

T

amb

= 25



C.  

(1) V

CE

= 3.3 V  

(2)  

V

CE

= 5.0 V  

(3) V

CE

= 8.0 V  

(4) V

CE

= 12.0 V  

Fig 9.

 

Transition frequency as a function of collector current; typical values  

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

8 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢂꢄꢉꢈ  

DDDꢀꢁꢂꢂꢄꢉꢄ  

ꢈꢃ  

*

ꢈꢃ  

ꢀꢃ  

ꢁꢃ  

ꢂꢃ  

ꢃ

*

ꢊG%ꢋ  

ꢊG%ꢋ  

ꢀꢃ  

ꢁꢃ  

06*  

06*  

ꢂꢃ  

*

SꢊPD[ꢋ  

ꢁꢃꢃꢃ  

*

SꢊPD[ꢋ  

ꢁ

ꢁ

_

_

V

V  

ꢁꢂ  

_

_

_

V

V

_  

ꢁꢂ  

ꢃ

ꢃ

ꢆꢃꢃ  

ꢂꢃꢃꢃ  

ꢂꢆꢃꢃ  

ꢁꢃꢃꢃ  

ꢁꢆꢃꢃ  

Iꢉꢊ0+]ꢋ  

ꢀꢃꢃꢃ  

ꢃ

ꢆꢃꢃ  

ꢂꢃꢃꢃ  

ꢂꢆꢃꢃ  

ꢁꢆꢃꢃ  

ꢀꢃꢃꢃ  

Iꢉꢊ0+]ꢋ  

I

C

= 50 mA; V

CE

= 8 V; T

amb

= 25



C.  

I

C

= 80 mA; V

CE

= 8 V; T

amb

= 25



C.  

Fig 10.

 

Gain as a function of frequency; typical values

 

Fig 11.

 

Gain as a function of frequency; typical values  

DDDꢀꢁꢂꢂꢄꢉꢇ  

DDDꢀꢁꢂꢂꢄꢃꢁ  

ꢁꢃ  

ꢂꢄ  

ꢂꢁ  

ꢇ

ꢁꢆ  

ꢁ

_

_

V

V  

_

*

SꢊPD[ꢋ  

ꢊꢂꢋ  

ꢁꢂ  

ꢊG%ꢋ  

ꢊG%ꢋ  

ꢁꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢊꢈꢋ  

ꢊꢆꢋ  

ꢊꢆꢋ  

ꢈ

ꢃ

ꢃ

ꢃ

ꢁꢆ  

ꢆꢃ  

ꢌꢆ  

ꢂꢃꢃ  

ꢂꢁꢆ  

ꢂꢆꢃ  

ꢃ

ꢁꢆ  

ꢆꢃ  

ꢌꢆ  

ꢂꢃꢃ  

ꢂꢁꢆ  

ꢂꢆꢃ  

,

&

ꢉꢊP$ꢋ  

,

&

ꢉꢊP$ꢋ  

V

CE

= 8 V; T

amb

= 25



C.  

V

CE

= 8 V; T

amb

= 25



C.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

If K >1 then G

p(max)

= maximum power gain. If K < 1 then  

G

p(max)

= MS

G

.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

Fig 12.

 

Insertion power gain as a function of collector  

current; typical values  

Fig 13.

 

Maximum power gain as a function of collector  

current; typical values  

BFU590Q  

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Product data sheet  

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NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢂꢄꢃꢂ  

DDDꢀꢁꢂꢂꢄꢃꢅ  

ꢁꢃ  

ꢁ

ꢁꢆ  

*

SꢊPD[ꢋ  

ꢊG%ꢋ  

_

_

V

V  

_

ꢊꢂꢋ  

ꢁꢂ  

ꢊG%ꢋ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢂꢄ  

ꢂꢁ  

ꢇ

ꢁꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢊꢈꢋ  

ꢊꢆꢋ  

ꢊꢆꢋ  

ꢈ

ꢃ

ꢃ

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

ꢂꢈ  

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

ꢂꢈ  

9

ꢉꢊ9ꢋ  

9

ꢉꢊ9ꢋ  

&(  

&(  

I

C

= 50 mA; T

amb

= 25



C.  

I

C

= 80 mA; T

amb

= 25



C.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

If K >1 then G

p(max)

= maximum power gain. If K < 1 then  

G

p(max)

= MS

G

.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

Fig 14.

 

Insertion power gain as a function of  

collector-emitter voltage; typical values  

Fig 15.

 

Maximum power gain as a function of  

collector-emitter voltage; typical values  

BFU590Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

10 of 19  

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NXP Semiconductors  

NPN wideband silicon RF transistor  

ꢂ

ꢃꢍꢆ  

ꢁ

ꢃꢍꢁ  

ꢆ

ꢂꢃ  

ꢃꢍꢁ  

ꢃꢍꢆ  

ꢊꢂꢋ  

ꢂ

ꢁ

ꢆ

ꢂꢃ  

’

ꢃꢍꢃ  

ꢊꢁꢋ  

ꢎꢂꢃ  

ꢎꢆ  

ꢎꢃꢍꢁ  

ꢎꢁ  

ꢎꢃꢍꢆ  

ꢎꢂ  

DDDꢀꢁꢂꢂꢄꢃꢆ  

V

CE

= 8 V; 40 MHz



f



3 GHz.  

(1) I

C

= 50 mA  

(2)

C

= 80 mA  

I

Fig 16.

 

Input reflection coefficient (s

11

); typical values  

ꢂ

ꢃꢍꢆ  

ꢁ

ꢃꢍꢁ  

ꢆ

ꢂꢃ  

ꢃꢍꢁ  

ꢃꢍꢆ  

ꢂ

ꢁ

ꢆ

ꢂꢃ  

’

ꢃꢍꢃ  

ꢎꢂꢃ  

ꢎꢆ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢎꢃꢍꢁ  

ꢎꢁ  

ꢎꢃꢍꢆ  

ꢎꢂ  

DDDꢀꢁꢂꢂꢄꢃꢉ  

V

CE

= 8 V; 40 MHz



f



3 GHz.  

(1) I

C

= 50 mA  

(2) I

C

= 80 mA  

Fig 17.

 

Output reflection coefficient (s

22

); typical values  

BFU590Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

11 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢂꢄꢃꢃ  

DDDꢀꢁꢂꢂꢄꢃꢊ  

ꢈꢃ  

ꢁꢆ  

,

,

3

3

ꢀ

ꢀ  

3

3  

/ꢊꢂG%ꢋ  

R

ꢊG%Pꢋ  

ꢊG%Pꢋ  

ꢁꢃ  

ꢀꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢁꢃ  

ꢂꢃ  

ꢃ

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢊꢀꢋ  

ꢃ

ꢃ

ꢁꢃ  

ꢈꢃ  

ꢄꢃ  

ꢇꢃ  

ꢂꢃꢃ  

ꢂꢁꢃ  

ꢃ

ꢁꢃ  

ꢈꢃ  

ꢄꢃ  

ꢇꢃ  

ꢂꢃꢃ  

ꢂꢁꢃ  

,

&

ꢉꢊP$ꢋ  

,

&

ꢉꢊP$ꢋ  

V

CE

= 8 V; T

amb

= 25



C.  

V

CE

= 8 V; T

amb

= 25



C.  

(1) f

1

= 433 MHz; f

2

= 434 MHz  

(2) f

1

= 900 MHz; f

2

= 901 MHz  

(1) f

 

= 433 MHz  

(2) f

 

= 900 MHz  

(3) f

 

= 1800 MHz  

(3) f

1

= 1800 MHz; f

2

= 1801 MHz  

Fig 18.

 

Output third-order intercept point as a function  

of collector current; typical values  

Fig 19.

 

Output power at 1 dB gain compression as a  

function of collector current; typical values  

DDDꢀꢁꢂꢂꢄꢃꢈ  

DDDꢀꢁꢂꢂꢄꢃꢄ  

ꢈꢃ  

ꢁꢆ  

,

,

3

3

ꢀ

ꢀ  

3

3  

/ꢊꢂG%ꢋ  

R

ꢊG%Pꢋ  

ꢊG%Pꢋ  

ꢊꢂꢋ  

ꢁꢃ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢀꢃ  

ꢊꢀꢋ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢁꢃ  

ꢂꢃ  

ꢃ

ꢃ

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

ꢂꢈ  

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

ꢂꢈ  

9

ꢉꢊ9ꢋ  

9

ꢉꢊ9ꢋ  

&(  

&(  

I

C

= 80 mA; T

amb

= 25



C.  

I

C

= 80 mA; T

amb

= 25



C.  

(1) f

1

= 433 MHz; f

2

= 434 MHz  

(2) f

1

= 900 MHz; f

2

= 901 MHz  

(3) f

1

= 1800 MHz; f

2

= 1801 MHz  

(1) f

 

= 433 MHz  

(2) f

 

= 900 MHz  

(3) f

 

= 1800 MHz  

Fig 20.

 

Output third-order intercept point as a function  

of collector-emitter voltage; typical values  

Fig 21.

 

Output power at 1 dB gain compression as a  

function of collector-emitter voltage;  

typical values  

BFU590Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

12 of 19  

BFU590Q  

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NPN wideband silicon RF transistor  

10. Application information  

More information about the following application example can be found in the application  

notes. See

Section 5 “Design support”

.  

The following application example can be implemented using the evaluation kit. See  

Section 3 “Ordering information”

for the order type number.  

The following application example can be simulated using the simulation package. See  

Section 5 “Design support”

.  

10.1 Application

 

example: 433 MHz PA  

More detailed information of the application example can be found in the application note:  

AN11504.  

9

ꢉꢃꢍꢌꢇꢉ9  

%%  

9

ꢉꢇꢉ9  

&&  

ꢂꢃꢉ—)  

ꢁꢁꢉQ)  

ꢂꢃꢃꢉS)  

ꢂꢃꢉȍ  

ꢈꢌꢃꢉQ+  

ꢂꢃꢃꢉS)  

ꢈꢌꢃꢉQ+  

ꢄꢇꢉQ+  

ꢂꢃꢃꢉS)  

ꢂꢆꢉQ+  

5)ꢉRXWSXW  

ꢊ60$ꢋ  

ꢂꢃꢃꢉS)  

ꢆꢍꢄꢉQ+  

5)ꢉLQSXW  

ꢊ60$ꢋ  

’87  

ꢂꢃꢉS)  

ꢃꢍꢄꢇꢉS)  

DDDꢀꢁꢂꢅꢄꢊꢇ  

Fig 22.

 

Schematic 433 MHz power amplifier  

Remark: fine tuning of components maybe required depending on PCB parasitics.  

Table 10.

 

Application performance data at 433 MHz  

I

CC

= 100 mA; V

CC

= 8 V  

Symbol Parameter  

Conditions  

Min Typ Max Unit  



s

21



2  



s

11



2  

P

L(1dB)  



C  

insertion power gain  

–

–

–

–

15  



7  

26  

60  

–

–

–

–

dB  

input return loss  

dB  

output power at 1 dB gain compression  

collector efficiency  

dBm  

%

BFU590Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

13 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

10.2 Application

 

example: 866 MHz PA  

More detailed information of the application example can be found in the application note:  

AN11502.  

9

ꢉꢃꢍꢌꢇꢉ9  

%%  

9

ꢉꢇꢉ9  

&&  

ꢂꢃꢉ—)  

ꢁꢁꢉQ)  

ꢂꢃꢃꢉS)  

ꢂꢃꢉȍ  

ꢈꢌꢃꢉQ+  

ꢂꢃꢃꢉS)  

ꢈꢌꢃꢉQ+  

ꢂꢇꢉQ+  

ꢂꢃꢃꢉS)  

ꢄꢍꢇꢉQ+  

5)ꢉRXWSXW  

ꢊ60$ꢋ  

ꢂꢃꢃꢉS)  

ꢂꢍꢆꢉQ+  

5)ꢉLQSXW  

ꢊ60$ꢋ  

’87  

ꢀꢍꢀꢉS)  

DDDꢀꢁꢂꢅꢄꢈꢁ  

Fig 23.

 

Schematic 866 MHz power amplifier  

Remark: fine tuning of components maybe required depending on PCB parasitics.  

Table 11.

 

Application performance data at 866 MHz  

I

CC

= 100 mA; V

CC

= 8 V  

Symbol Parameter  

Conditions  

Min Typ Max Unit  



s

21



2  



s

11



2  

P

L(1dB)  



C  

insertion power gain  

–

–

–

–

10  

–

–

–

–

dB  

input return loss  



12  

27  

dB  

output power at 1 dB gain compression  

collector efficiency  

dBm  

%

55  

BFU590Q  

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© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

14 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

11. Package

 

outline  

3ODVWLFꢂVXUIDFHꢅPRXQWHGꢂSDFNDJHꢆꢂH[SRVHGꢂGLHꢂSDGꢂIRUꢂJRRGꢂKHDWꢂWUDQVIHUꢆꢂꢇꢂOHDGV  

627ꢀꢁ  

%

$

‘

E

Sꢀ  

(

+

(

/

S

ꢈ

ꢉ

ꢇ

F

E

Sꢁ  

Z

0

%

E

Sꢂ  

H

ꢂ

H

ꢃ

ꢁ

ꢈꢉPP  

VFDOH  

‘,0(16,216ꢂꢃPPꢂDUHꢂWKHꢂRULJLQDOꢂGLPHQVLRQVꢄ  

81,7  

$

E

E

E

F

‘

(

H

H

+

/

S

Z

Sꢈ  

Sꢉ  

Sꢇ  

ꢈ

(

ꢂꢍꢄꢉ  

ꢂꢍꢈ  

ꢃꢍꢈꢇꢉ ꢃꢍꢆꢀꢉ  

ꢃꢍꢀꢆ ꢃꢍꢈꢃ  

ꢂꢍꢇꢉ  

ꢂꢍꢈ  

ꢃꢍꢈꢈꢉ  

ꢃꢍꢁꢀ  

ꢈꢍꢄꢉ  

ꢈꢍꢈ  

ꢁꢍꢄꢉ  

ꢁꢍꢈ  

ꢈꢍꢁꢆꢉ  

ꢀꢍꢌꢆ  

ꢂꢍꢁꢉ  

ꢃꢍꢇ  

PP  

ꢀꢍꢃ  

ꢂꢍꢆ  

ꢃꢍꢂꢀ  

ꢂ5()(5(1&(6  

(8523($1ꢂ  

352-(&7,21  

287/,1(ꢂ  

9(56,21  

,668(ꢂ’$7(  

ꢂ,(&  

ꢂ-(‘(&  

ꢂ-(,7$  

6&ꢎꢄꢁ  

ꢃꢄꢎꢃꢀꢎꢂꢄꢉ  

ꢃꢄꢎꢃꢇꢎꢁꢅ  

ꢉ627ꢇꢅ  

72ꢎꢁꢈꢀ  

Fig 24.

 

Package outline SOT89  

BFU590Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

15 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

12. Handling information  

CAUTION  

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  

electrostatic sensitive devices.  

Such precautions are described in the

ANSI/ESD S20.20

,

IEC/ST 61340-5

,

JESD625-A

or  

equivalent standards.  

13. Abbreviations  

Table 12.

 

Abbreviations  

Acronym  

AEC  

ISM  

Description  

Automotive Electronics Council  

Industrial, Scientific and Medical  

Low-Noise Amplifier  

LNA  

MSG  

NPN  

PA  

Maximum Stable Gain  

Negative-Positive-Negative  

Power Amplifier  

SMA  

SubMiniature version A  

14. Revision history  

Table 13.

 

Revision history  

Document ID  

Release date  

20140428  

Data sheet status  

Change notice  

Supersedes  

BFU590Q v.1  

Product data sheet  

–

–

BFU590Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

16 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

15. Legal information  

15.1 Data

 

sheet status  

Document status

[1][2]  

Product status

[3]  

Development  

Definition  

Objective [short] data sheet  

This document contains data from the objective specification for product development.  

This document contains data from the preliminary specification.  

This document contains the product specification.  

Preliminary [short] data sheet

 

Qualification  

Product [short] data sheet

 

Production  

[1]  

[2]  

[3]  

Please consult the most recently issued document before initiating or completing a design.  

The term ‘short data sheet’ is explained in section “Definitions”.  

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  

information is available on the Internet at URL

.  

Suitability for use in automotive applications —

This NXP  

15.2 Definitions  

Semiconductors product has been qualified for use in automotive  

applications. Unless otherwise agreed in writing, the product is not designed,  

authorized or warranted to be suitable for use in life support, life-critical or  

safety-critical systems or equipment, nor in applications where failure or  

malfunction of an NXP Semiconductors product can reasonably be expected  

to result in personal injury, death or severe property or environmental  

damage. NXP Semiconductors and its suppliers accept no liability for  

inclusion and/or use of NXP Semiconductors products in such equipment or  

applications and therefore such inclusion and/or use is at the customer’s own  

risk.  

Draft —

The document is a draft version only. The content is still under  

internal review and subject to formal approval, which may result in  

modifications or additions. NXP Semiconductors does not give any  

representations or warranties as to the accuracy or completeness of  

information included herein and shall have no liability for the consequences of  

use of such information.  

Short data sheet —

A short data sheet is an extract from a full data sheet  

with the same product type number(s) and title. A short data sheet is intended  

for quick reference only and should not be relied upon to contain detailed and  

full information. For detailed and full information see the relevant full data  

sheet, which is available on request via the local NXP Semiconductors sales  

office. In case of any inconsistency or conflict with the short data sheet, the  

full data sheet shall prevail.  

Applications —

Applications that are described herein for any of these  

products are for illustrative purposes only. NXP Semiconductors makes no  

representation or warranty that such applications will be suitable for the  

specified use without further testing or modification.  

Customers are responsible for the design and operation of their applications  

and products using NXP Semiconductors products, and NXP Semiconductors  

accepts no liability for any assistance with applications or customer product  

design. It is customer’s sole responsibility to determine whether the NXP  

Semiconductors product is suitable and fit for the customer’s applications and  

products planned, as well as for the planned application and use of  

customer’s third party customer(s). Customers should provide appropriate  

design and operating safeguards to minimize the risks associated with their  

applications and products.  

Product specification —

The information and data provided in a Product  

data sheet shall define the specification of the product as agreed between  

NXP Semiconductors and its customer, unless NXP Semiconductors and  

customer have explicitly agreed otherwise in writing. In no event however,  

shall an agreement be valid in which the NXP Semiconductors product is  

deemed to offer functions and qualities beyond those described in the  

Product data sheet.  

NXP Semiconductors does not accept any liability related to any default,  

damage, costs or problem which is based on any weakness or default in the  

customer’s applications or products, or the application or use by customer’s  

third party customer(s). Customer is responsible for doing all necessary  

testing for the customer’s applications and products using NXP  

Semiconductors products in order to avoid a default of the applications and  

the products or of the application or use by customer’s third party  

customer(s). NXP does not accept any liability in this respect.  

15.3 Disclaimers  

Limited warranty and liability —

Information in this document is believed to  

be accurate and reliable. However, NXP Semiconductors does not give any  

representations or warranties, expressed or implied, as to the accuracy or  

completeness of such information and shall have no liability for the  

consequences of use of such information. NXP Semiconductors takes no  

responsibility for the content in this document if provided by an information  

source outside of NXP Semiconductors.  

Limiting values —

Stress above one or more limiting values (as defined in  

the Absolute Maximum Ratings System of IEC 60134) will cause permanent  

damage to the device. Limiting values are stress ratings only and (proper)  

operation of the device at these or any other conditions above those given in  

the Recommended operating conditions section (if present) or the  

Characteristics sections of this document is not warranted. Constant or  

repeated exposure to limiting values will permanently and irreversibly affect  

the quality and reliability of the device.  

In no event shall NXP Semiconductors be liable for any indirect, incidental,  

punitive, special or consequential damages (including – without limitation – lost  

profits, lost savings, business interruption, costs related to the removal or  

replacement of any products or rework charges) whether or not such  

damages are based on tort (including negligence), warranty, breach of  

contract or any other legal theory.  

Notwithstanding any damages that customer might incur for any reason  

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  

customer for the products described herein shall be limited in accordance  

with the

T

e

rms and conditions of commercial sale

of NXP Semiconductors.  

Terms and conditions of commercial sale —

NXP Semiconductors  

products are sold subject to the general terms and conditions of commercial  

sale, as published at

, unless otherwise  

agreed in a valid written individual agreement. In case an individual  

agreement is concluded only the terms and conditions of the respective  

agreement shall apply. NXP Semiconductors hereby expressly objects to  

applying the customer’s general terms and conditions with regard to the  

purchase of NXP Semiconductors products by customer.  

Right to make changes —

NXP Semiconductors reserves the right to make  

changes to information published in this document, including without  

limitation specifications and product descriptions, at any time and without  

notice. This document supersedes and replaces all information supplied prior  

to the publication hereof.  

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

17 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

No offer to sell or license —

Nothing in this document may be interpreted or  

construed as an offer to sell products that is open for acceptance or the grant,  

conveyance or implication of any license under any copyrights, patents or  

other industrial or intellectual property rights.  

Translations —

A non-English (translated) version of a document is for  

reference only. The English version shall prevail in case of any discrepancy  

between the translated and English versions.  

Export control —

This document as well as the item(s) described herein  

may be subject to export control regulations. Export might require a prior  

authorization from competent authorities.  

15.4 Trademarks  

Notice: All referenced brands, product names, service names and trademarks  

are the property of their respective owners.  

Quick reference data —

The Quick reference data is an extract of the  

product data given in the Limiting values and Characteristics sections of this  

document, and as such is not complete, exhaustive or legally binding.  

16. Contact information  

For more information, please visit:

For sales office addresses, please send an email to:

BFU590Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

18 of 19  

BFU590Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

17. Contents  

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

1.1  

1.2  

1.3  

1.4  

General description

 

. . . . . . . . . . . . . . . . . . . . .

 

1  

Features and benefit

s

. . . . . . . . . . . . . . . . . . . .

 

1  

Applications .

 

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

Quick reference data

 

. . . . . . . . . . . . . . . . . . . .

 

1  

2

Pinning informatio

n

. . . . . . . . . . . . . . . . . . . . . .

 

2  

Ordering informatio

n

. . . . . . . . . . . . . . . . . . . . .

 

2  

Markin

g

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2  

Design support

 

. . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Recommended operating conditions. . . . . . . .

 

3  

Thermal characteristics

 

. . . . . . . . . . . . . . . . . .

 

4  

Characteristic

s

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

6  

3

4

5

6

7

8

9

9.1  

10  

10.1  

10.2  

Application information. . . . . . . . . . . . . . . . . .

 

13  

Application example: 433 MHz PA . . . . . . . . .

 

13  

Application example: 866 MHz PA . . . . . . . . .

 

14  

11  

12  

13  

14  

Package outline . . . . . . . . . . . . . . . . . . . . . . . .

 

15  

Handling information. . . . . . . . . . . . . . . . . . . .

 

16  

Abbreviation

s

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

6  

Revision histor

y

. . . . . . . . . . . . . . . . . . . . . . . .

 

1

6  

15  

Legal information. . . . . . . . . . . . . . . . . . . . . . .

 

17  

Data sheet status . . . . . . . . . . . . . . . . . . . . . .

 

17  

Definition

s

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

7  

Disclaimer

s

. . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

7  

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .

 

18  

15.1  

15.2  

15.3  

15.4  

16  

17  

Contact information. . . . . . . . . . . . . . . . . . . . .

 

18  

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

19  

Please be aware that important notices concerning this document and the product(s)  

described herein, have been included in section ‘Legal information’.  

© NXP Semiconductors N.V.

 

2014.  

All rights reserved.  

For sales office addresses, please send an email to: salesaddresses@nxp.com  

Date of release: 28 April 2014  

Document identifier: BFU590Q