NXP-Semicon-BFU690F-115
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BFU690F
NPN wideband silicon RF transistor
Rev. 2 — 14 March 2014
Product data sheet
1. Product
profile
1.1 General
description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
1.2 Features
and benefits
Low noise high linearity microwave transistor
High output third-order intercept point 34 dBm at 1.8 GHz
40 GHz f
T
silicon technology
1.3 Applications
Ka band oscillators DRO’s
C-band high output buffer amplifier
ZigBee
LTE, cellular, UMTS
1.4 Quick
reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
open emitter
open base
Min Typ
Max Unit
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
–
–
–
–
–
–
–
–
16
V
V
V
collector-emitter voltage
emitter-base voltage
collector current
5.5
2.5
open collector
70 100
mA
490 mW
[1]
P
tot
total power dissipation
DC current gain
T
sp
85
C
–
h
FE
I
C
= 20 mA; V
CE
= 2 V; T
j
= 25
C
V
CB
= 2 V; f = 1 MHz
90 135
180
C
CBS
f
T
collector-base capacitance
transition frequency
–
–
404
18
–
–
fF
I
C
= 60 mA; V
CE
= 1 V; f = 2 GHz;
GHz
T
amb
= 25
C
[2]
G
p(max)
maximum power gain
I
C
= 60 mA; V
CE
= 1 V; f = 1.8 GHz;
–
20.5 –
dB
T
amb
= 25
C
NF noise
figure
I
C
= 15 mA; V
CE
= 2 V; f = 1.8 GHz;
S
=
opt
–
–
0.65 –
dB
P
L(1dB)
output power at 1 dB gain compression
I
C
= 70 mA; V
CE
= 4 V; Z
S
= Z
L
= 50
;
f = 1.8 GHz; T
amb
= 25
C
22
–
dBm
[1] T
sp
is the temperature at the solder point of the emitter lead.
[2] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
2. Pinning
information
Table 2.
Discrete pinning
Pin
1
Description
emitter
Simplified outline
Graphic symbol
ꢃ
ꢄ
ꢄ
2
base
3
emitter
ꢁ
4
collector
ꢀꢅꢂꢃ
ꢁꢂ
ꢀ
PEEꢀꢁꢂ
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
–
Description
Version
BFU690F
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
4. Marking
Table 4.
Marking
Type number
BFU690F
Marking
Description
D4*
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Conditions
open emitter
open base
Min
Max
16
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
–
–
5.5
V
open collector
–
2.5
V
–
100
490
+150
150
mA
mW
C
C
[1]
P
tot
total power dissipation
storage temperature
junction temperature
T
sp
85
C
–
T
stg
65
T
j
–
[1] T
sp
is the temperature at the solder point of the emitter lead.
BFU690F
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
2 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
6. Thermal
characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
R
th(j-sp)
thermal resistance from junction to solder point
132 K/W
[1] Determined
by simulation.
DDDꢃꢄꢀꢅꢆꢅꢇ
ꢇꢆꢆ
3
3
WRW
ꢊP:ꢋ
ꢉꢆꢆ
ꢄꢆꢆ
ꢃꢆꢆ
ꢁꢆꢆ
ꢀꢆꢆ
ꢆ
ꢆ
ꢁꢆ
ꢄꢆ
ꢇꢆ
ꢈꢆ ꢀꢆꢆ
ꢀꢁꢆ ꢀꢄꢆ ꢀꢇꢆ
ꢂꢊ&ꢋ
7
VS
Fig 1.
Power derating curve
BFU690F
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
3 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified
Symbol Parameter
Conditions
Min Typ
Max Unit
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
= 2.5
A; I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
16
5.5
–
–
–
–
V
V
–
I
C
collector current
70
–
100 mA
100 nA
180
I
CBO
h
FE
collector-base cut-off current
DC current gain
I
E
= 0 mA; V
CB
= 8 V
I
C
= 20 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
–
90 135
C
CES
C
EBS
C
CBS
f
T
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
–
–
–
–
527
1699
404
18
–
–
–
–
fF
fF
fF
I
C
= 60 mA; V
CE
= 1 V; f = 2 GHz;
GHz
T
amb
= 25
C
[1]
G
p(max)
s
21
2
NF
maximum power gain
insertion power gain
noise figure
I
C
= 60 mA; V
CE
= 1 V; T
amb
= 25
C
f = 1.5 GHz
–
–
–
22
–
–
–
dB
dB
dB
f = 1.8 GHz
20.5
17
f = 2.4 GHz
I
C
= 60 mA; V
CE
= 1 V; T
amb
= 25
C
f = 1.5 GHz
–
–
–
15
–
–
–
dB
dB
dB
f = 1.8 GHz
13.5
11
f = 2.4 GHz
I
C
= 15 mA; V
CE
= 2 V;
S
=
opt
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
–
–
–
0.60
0.65
0.70
–
–
–
dB
dB
dB
G
ass
P
L(1dB)
IP3
associated gain
I
C
= 15 mA; V
CE
= 2 V;
S
=
opt
T
amb
= 25
C
;
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
–
–
–
18.5
17.5
15.5
–
–
–
dB
dB
dB
output power at 1 dB gain compression
I
C
= 70 mA; V
CE
= 4 V; Z
S
= Z
L
= 50
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
–
–
–
22
22
20
–
–
–
dBm
dBm
dBm
third-order intercept point
I
C
= 70 mA; V
CE
= 4 V; Z
S
= Z
L
= 50
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
–
–
–
34
34
33
–
–
–
dBm
dBm
dBm
[1] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MS
G
.
BFU690F
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
4 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
001aam833
001aam834
80
200
(1)
(2)
(3)
(4)
I
h
FE
C
(mA)
60
150
100
50
(5)
(6)
(7)
40
20
0
(8)
(9)
(10)
0
0
1
2
3
4
5
0
20
40
60
80
100
I (mA)
C
V
CE
(V)
T
amb
= 25
C.
B
= 550
A
V
CE
= 2 V; T
amb
= 25
C.
(1)
I
(2) I
B
= 500
A
(3) I
B
= 450
A
(4)
I
B
= 400
A
(5) I
B
= 350
A
(6) I
B
= 300
A
(7)
I
B
= 250
A
(8) I
B
= 200
A
(9) I
B
= 150
A
(10)
I
B
= 100
A
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
Fig 3.
DC current gain as a function of collector
current; typical values
BFU690F
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
5 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
001aam835
001aam836
600
25
fT
(GHz)
C
CBS
(fF)
20
400
15
10
5
200
0
0
0
4
8
12
0
20
40
60
80
100
I (mA)
C
V
(V)
CB
f = 1 MHz, T
amb
= 25
C.
V
CE
= 1 V; f = 2 GHz; T
amb
= 25
C.
Fig 4.
Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 5.
Transition frequency as a function of collector
current; typical values
001aam837
25
G
(1)
(2)
MSG
(dB)
20
(3)
G
p(max)
15
10
5
0
0
20
40
60
80
100
(mA)
I
C
V
CE
= 1 V; T
amb
= 25
C.
(1) f
= 1.5 GHz
(2) f
= 1.8 GHz
(3) f
= 2.4 GHz
Fig 6.
Gain as a function of collector current; typical value
BFU690F
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
6 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
001aam838
001aam839
40
40
G
G
(dB)
(dB)
30
30
MSG
20
10
0
MSG
2
20
10
0
G
p(max)
2
|S21|
G
p(max)
|S21|
0
2
4
6
8
10
0
2
4
6
8
10
f (GHz)
f (GHz)
V
CE
= 1 V; I
C
= 10 mA; T
amb
= 25
C.
V
CE
= 1 V; I
C
= 60 mA; T
amb
= 25
C.
Fig 7.
Gain as a function of frequency; typical values
Fig 8.
Gain as a function of frequency; typical values
001aam840
001aam841
1.0
1.0
NF
min
NF
min
(dB)
(dB)
(1)
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
(2)
(3)
10
15
20
25
30
35
40
45
0
1
2
3
I
(mA)
f (GHz)
C
V
CE
= 2 V; T
amb
= 25
C.
V
CE
= 2 V; I
C
= 15 mA; T
amb
= 25
C.
(1) f
= 2.4 GHz
(2) f
= 1.8 GHz
(3) f
= 1.5 GHz
Fig 9.
Minimum noise figure as a function of
collector current; typical values
Fig 10.
Minimum noise figure as a function of
frequency; typical values
BFU690F
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
7 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
8. Package
outline
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Fig 11.
Package outline SOT343F
BFU690F
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
8 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
9. Handling
information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
10. Abbreviations
Table 8.
Acronym
Abbreviations
Description
DRO
Ka
Dielectric Resonator Oscillator
Kurtz above
LTE
Long
T
e
rm Evolution
NPN
UMTS
Negative-Positive-Negative
Universal Mobile
T
e
lecommunications System
11. Revision
history
Table 9.
Revision history
Document ID
BFU690F v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20140314
Product data sheet
–
BFU690F v.1
•
T
a
ble 1 on page 1
: The value and conditions for P
tot
have been updated.
•
T
a
ble 5 on page 2
: The value and conditions for P
tot
have been updated.
•
T
a
ble 6 on page 3
: The value and conditions for R
th(j-sp)
have been updated.
•
Figure 1 on page 3
: The graph has been updated.
•
Section 9 on page 9
: The ESD caution has been moved here from
Section 1.1 on page 1
.
BFU690F v.1
20101216
Product data sheet
–
–
BFU690F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
9 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Suitability for use —
NXP Semiconductors products are not designed,
12.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BFU690F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
10 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
BFU690F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
11 of 12
BFU690F
NXP Semiconductors
NPN wideband silicon RF transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
8
Handling information. . . . . . . . . . . . . . . . . . . . .
9
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
9
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
10
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
10
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
0
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
0
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
11
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V.
2014.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 March 2014
Document identifier: BFU690F
