NXP-Semicon-BFU760F-115
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BFU760F
NPN wideband silicon germanium RF transistor
Rev. 1 — 29 April 2011
Product data sheet
1. Product
profile
1.1 General
description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
1.2 Features
and benefits
Low noise high linearity RF transistor
High maximum output third-order intercept point 32 dBm at 1.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
Ka band oscillators DRO’s
High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
GPS
ZigBee
SDARS first stage LNA
LTE, cellular, UMTS
BFU760F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
1.4 Quick
reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
open emitter
Min Typ
Max
10
Unit
V
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
–
–
–
–
–
–
collector-emitter voltage
open base
–
2.8
1.0
70
V
emitter-base voltage
collector current
open collector
–
V
25
–
mA
mW
[1]
P
tot
total power dissipation
DC current gain
T
sp
≤
90
°
C
220
505
h
FE
I
C
= 10 mA; V
CE
= 2 V;
155 330
T
j
= 25
°
C
C
CBS
f
T
collector-base
capacitance
V
CB
= 2 V; f = 1 MHz
–
–
–
–
–
175
45
–
–
–
–
–
fF
transition frequency
I
C
= 50 mA; V
CE
= 1 V;
f = 2 GHz; T
amb
= 25
°
C
GHz
dB
[2]
G
p(max)
maximum power gain
I
C
= 50 mA; V
CE
= 1 V;
f = 2.4 GHz; T
amb
= 25
°
C
22
NF
noise figure
I
C
= 12 mA; V
CE
= 2 V;
f = 2.4 GHz;
Γ
S
=
Γ
opt
0.50
32
dB
IP3
third-order intercept
point
I
C
= 30 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
;
dBm
f = 2.4 GHz; T
amb
= 25
°
C
[1] T
sp
is the temperature at the solder point of the emitter lead.
[2] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning
information
Table 2.
Discrete pinning
Pin
1
Description
emitter
Simplified outline
Graphic symbol
3
4
4
2
base
3
emitter
2
4
collector
1, 3
2
1
mbb159
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
–
Description
Version
BFU760F
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
BFU760F
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. 2011. All rights reserved.
Product data sheet
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NXP Semiconductors
NPN wideband silicon germanium RF transistor
4. Marking
Table 4.
Marking
Type number
Marking
Description
BFU760F
D7*
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Conditions
open emitter
open base
Min
Max
10
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
–
–
2.8
V
open collector
–
1.0
V
–
70
mA
mW
°
C
°
C
[1]
P
tot
total power dissipation
storage temperature
junction temperature
T
sp
≤
90
°
C
–
220
+150
150
T
stg
−
65
T
j
–
[1] T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal
characteristics
Table 6.
Symbol Parameter
R
th(j-sp)
thermal resistance from junction to solder point
Thermal characteristics
Conditions
Typ Unit
270 K/W
001aam862
250
tot
P
(mW)
200
150
100
50
0
0
40
80
120
160
T
sp
(
°
C)
Fig 1.
Power derating curve
BFU760F
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V
. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
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NXP Semiconductors
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Conditions
Min Typ
Max Unit
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
= 2.5
μ
A; I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
10
2.8
–
–
–
V
–
–
V
I
C
collector current
25
–
70
mA
I
CBO
h
FE
collector-base cut-off current
DC current gain
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
–
100 nA
505
155 330
C
CES
C
EBS
C
CBS
f
T
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
–
–
–
–
292
1054
175
45
–
–
–
–
fF
fF
fF
I
C
= 50 mA; V
CE
= 1 V; f = 2 GHz;
GHz
T
amb
= 25
°
C
[1]
G
p(max)
maximum power gain
insertion power gain
noise figure
I
C
= 50 mA; V
CE
= 1 V; T
amb
= 25
°
C
f = 1.5 GHz
–
–
–
–
25.5
24
–
–
–
–
dB
dB
dB
dB
f = 1.8 GHz
f = 2.4 GHz
22
f = 5.8 GHz
13.5
2
|
s
21
|
I
C
= 50 mA; V
CE
= 1 V; T
amb
= 25
°
C
f = 1.5 GHz
–
–
–
–
22
–
–
–
–
dB
dB
dB
dB
f = 1.8 GHz
20.5
18
f = 2.4 GHz
f = 5.8 GHz
10.5
NF
I
C
= 12 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
T
amb
= 25
°
C
;
;
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
–
–
–
–
0.40
0.45
0.50
0.75
–
–
–
–
dB
dB
dB
dB
G
ass
associated gain
I
C
= 12 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
–
–
–
–
23
–
–
–
–
dB
dB
dB
dB
21.5
19.5
12.5
P
L(1dB)
output power at 1 dB gain compression
I
C
= 30 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
–
–
–
–
18
–
–
–
–
dBm
dBm
dBm
dBm
18
17
18.5
BFU760F
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. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
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NXP Semiconductors
NPN wideband silicon germanium RF transistor
Table 7.
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Conditions
Min Typ
Max Unit
IP3
third-order intercept point
I
C
= 30 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
–
–
–
–
32
32
32
33
–
–
–
–
dBm
dBm
dBm
dBm
[1] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MS
G
.
001aam863
001aam864
60
500
h
(1)
(2)
(3)
FE
I
C
(mA)
400
300
200
100
0
40
(4)
(5)
(6)
(7)
20
(8)
(9)
0
0
1
2
3
0
20
40
60
V
(V)
I (mA)
C
CE
T
amb
= 25
°
C.
V
CE
= 2 V; T
amb
= 25
°
C.
(1) I
B
= 180
μ
A
(2) I
B
= 160
μ
A
(3) I
B
= 140
μ
A
(4) I
B
= 120
μ
A
(5) I
B
= 100
μ
A
(6) I
B
= 80
μ
A
(7) I
B
= 60
μ
A
(8) I
B
= 40
μ
A
(9) I
B
= 20
μ
A
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
Fig 3.
DC current gain as a function of collector
current; typical values
BFU760F
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. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
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BFU760F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
001aam865
001aam866
250
50
C
CBS
fT
(fF)
(GHz)
200
40
30
20
10
0
150
100
50
0
0
1
2
3
4
0
20
40
60
80
V
CB
(V)
I (mA)
C
f = 1 MHz, T
amb
= 25
°
C.
V
CE
= 1 V; f = 2 GHz; T
amb
= 25
°
C.
Fig 4.
Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 5.
Transition frequency as a function of collector
current; typical values
001aam867
30
(1)
G
(dB)
MSG
(2)
(3)
20
G
p(max)
(4)
10
0
0
20
40
60
80
I
C
(mA)
V
CE
= 1 V; T
amb
= 25
°
C.
(1) f
= 1.5 GHz
(2) f
= 1.8 GHz
(3) f
= 2.4 GHz
(4) f
= 5.8 GHz
Fig 6.
Gain as a function of collector current; typical value
BFU760F
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V
. 2011. All rights reserved.
Product data sheet
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BFU760F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
001aam868
001aam869
40
40
G
G
(dB)
(dB)
30
30
MSG
MSG
20
20
G
p(max)
G
p(max)
2
2
IS21I
IS21I
10
0
10
0
0
2
4
6
8
10
0
2
4
6
8
10
f (GHz)
f (GHz)
V
CE
= 1 V; I
C
= 8 mA; T
amb
= 25
°
C.
V
CE
= 1 V; I
C
= 50 mA; T
amb
= 25
°
C.
Fig 7.
Gain as a function of frequency; typical values
Fig 8.
Gain as a function of frequency; typical values
001aam870
001aam871
1.2
1.0
NF
(dB)
min
(1)
NF
min
(dB)
0.8
0.6
0.4
0.2
0
0.8
0.4
0
(2)
(3)
(4)
0
10
20
30
0
2
4
6
8
10
I
(mA)
f (GHz)
C
V
CE
= 2 V; T
amb
= 25
°
C.
I
C
= 12 mA; V
CE
= 2 V; T
amb
= 25
°
C.
(1) f
= 5.8 GHz
(2) f
= 2.4 GHz
(3) f
= 1.8 GHz
(1) f
= 1.5 GHz
Fig 9.
Minimum noise figure as a function of
collector current; typical values
Fig 10.
Minimum noise figure as a function of
frequency; typical values
BFU760F
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V
. 2011. All rights reserved.
Product data sheet
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BFU760F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
8. Package
outline
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
SOT343F
D
E
A
X
y
H
E
e
3
4
A
c
L
p
2
1
b
p
b
1
M
M
A
w
A
w
detail X
e
1
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
b
p
b
c
D
E
e
e
H
E
L
p
w
y
1
1
max
0.75
0.65
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.48
0.38
mm
1.3
1.15
0.2
0.1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
05-07-12
06-03-16
SOT343F
Fig 11.
Package outline SOT343F
BFU760F
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V
. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
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NXP Semiconductors
NPN wideband silicon germanium RF transistor
9. Abbreviations
Table 8.
Abbreviations
Description
Acronym
DBS
Direct Broadcast Satellite
Direct Current
DC
DRO
GPS
Dielectric Resonator Oscillator
Global Positioning System
Kurtz above
Ka
LNA
Low Noise Amplifier
LNB
Low Noise Block
LTE
Long
T
e
rm Evolution
NPN
Negative-Positive-Negative
Radio Frequency
RF
SDARS
UMTS
WiMAX
WLAN
Satellite Digital Audio Radio Service
Universal Mobile
T
e
lecommunications System
Worldwide Interoperability for Microwave Access
Wireless Local Area Network
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFU760F v.1
20110429
Product data sheet
–
–
BFU760F
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V
. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
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NXP Semiconductors
NPN wideband silicon germanium RF transistor
11. Legal
information
11.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
malfunction of an NXP Semiconductors product can reasonably be expected
11.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
11.3 Disclaimers
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BFU760F
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V
. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
10 of 12
BFU760F
NXP Semiconductors
NPN wideband silicon germanium RF transistor
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
BFU760F
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V
. 2011. All rights reserved.
Product data sheet
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NPN wideband silicon germanium RF transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
2
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
8
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
9
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . .
10
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
10
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
0
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
0
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
11
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . .
11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2011.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 April 2011
Document identifier: BFU760F
