NXP-Semicon-BGA2801-115
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BGA2801
MMIC wideband amplifier
Rev. 5 — 13 July 2015
Product data sheet
1. Product
profile
1.1 General
description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features
and benefits
Internally matched to 50
A gain of 22.2 dB at 250 MHz increasing to 23.0 dB at 2150 MHz
Output power at 1 dB gain compression = 2 dBm
Supply current = 14.3 mA at a supply voltage of 3.3 V
Reverse isolation > 29 dB up to 2 GHz
Good linearity with low second order and third order products
Noise figure = 4 dB at 950 MHz
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning
information
Table 1.
Pinning
Pin
1
Description
V
CC
Simplified outline
Graphic symbol
ꢅ
ꢄ
ꢃ
ꢀ
2, 5
3
GND2
ꢅ
ꢁ
RF_OUT
GND1
4
ꢃ
ꢂꢆꢇꢄ
ꢀ
ꢂ
ꢁ
6
RF_IN
VPꢀꢁꢂ
3. Ordering
information
Table 2.
Ordering information
Type number
Package
Name
–
Description
plastic surface-mounted package; 6 leads
Version
BGA2801
SOT363
BGA2801
NXP Semiconductors
MMIC wideband amplifier
4. Marking
Table 3.
Marking
Type number
Marking code
Description
BGA2801
*E8
* = – : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
5. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
I
CC
Parameter
Conditions
Min
Max
Unit
V
supply voltage
RF input AC coupled
0.5 +5.0
supply current
–
55
mA
mW
P
tot
total power dissipation
storage temperature
junction temperature
drive power
T
sp
= 90
C
–
200
T
stg
40
+125
C
T
j
–
–
125
+10
C
P
drive
dBm
6. Thermal
characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
Conditions
Typ
300
Unit
K/W
thermal resistance from junction to
P
tot
= 200 mW; T
sp
= 90
C
solder point
7. Characteristics
Table 6.
Characteristics
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
30 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
3.6
V
CC
supply voltage
supply current
power gain
3.0
3.3
V
I
CC
G
p
12.2 14.3 16.3 mA
21.6 22.2 22.8 dB
21.7 22.4 23.1 dB
21.5 23.0 24.4 dB
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
RL
in
RL
out
BGA2801
input return loss
output return loss
15
15
10
13
14
10
17
17
12
17
15
12
19
19
19
22
16
15
dB
dB
dB
dB
dB
dB
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© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
2 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
Table 6.
Characteristics
…continued
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
30 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min
58
46
29
3.4
3.4
3.5
2.5
252
7
Typ
78
47
32
3.8
3.8
3.9
2.8
308
8
Max Unit
ISL
isolation
f = 250 MHz
99
49
34
4.3
4.3
4.4
3.1
363
10
1.9
5
dB
dB
dB
dB
dB
dB
GHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
NF
noise figure
f = 950 MHz
f = 2150 MHz
3 dB below gain at 1 GHz
f = 250 MHz
B
3dB
K
3 dB bandwidth
Rollett stability factor
f = 950 MHz
f = 2150 MHz
f = 250 MHz
0.7
4
1.3
4
P
L(sat)
saturated output power
dBm
dBm
dBm
dBm
dBm
dBm
f = 950 MHz
2
4
5
f = 2150 MHz
1
2
3
P
L(1dB)
output power at 1 dB gain compression
f = 250 MHz
1
2
3
f = 950 MHz
0
2
3
f = 2150 MHz
1
0
+1
IP3
I
input third-order intercept point
output third-order intercept point
second harmonic output power
P
drive
=
34 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz
f
1
= 950 MHz; f
2
= 951 MHz
f
1
= 2150 MHz; f
2
= 2151 MHz
P
drive
=
34 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz
f
1
= 950 MHz; f
2
= 951 MHz
f
1
= 2150 MHz; f
2
= 2151 MHz
P
drive
=
31 dBm
10
11
17
8
6
dBm
dBm
dBm
8
6
14
10
IP3
O
12
12
6
14
14
9
16
16
13
dBm
dBm
dBm
P
L(2H)
f
1H
= 250 MHz; f
2H
= 500 MHz
f
1H
= 950 MHz; f
2H
= 1900 MHz
62
51
60
50
58
48
dBm
dBm
IM2
second-order intermodulation distance
P
drive
=
34 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz
34
27
45
39
56
50
dBc
dBc
f
1
= 950 MHz; f
2
= 951 MHz
8. Application
information
Figure 1
shows a typical application circuit for the BGA2801 MMIC. The device is
internally matched to 50
, and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
BGA2801
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© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
3 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes
as close as possible to the MMIC.
9
6
&ꢀ
9
6
&ꢂ
&ꢁ
5)B,1
5)B287
5)ꢇLQSXW
5)ꢇRXWSXW
*1’ꢀ
*1’ꢂ
ꢀꢀꢃDDIꢄꢅꢃ
Fig 1.
Typical application circuit
8.1 Application
examples
ZLGHEDQGꢇ
DPSOLILHU
ZLGHEDQGꢇ
DPSOLILHU
/1$
PL[HU
PL[HU
WRꢇ,)ꢇFLUFXLWꢇ
RUꢇGHPRGXODWRU
IURPꢇ5)ꢇ
FLUFXLW
WRꢇ,)ꢇFLUFXLWꢇ
RUꢇGHPRGXODWRU
DQWHQQD
RVFLOODWRU
RVFLOODWRU
ꢀꢀꢃDDIꢄꢅꢂ
ꢀꢀꢃDDIꢄꢅꢆ
The MMIC is very suitable as IF amplifier in e.g. LNB’s.
The excellent wideband characteristics make it an easy
building block.
As second amplifier after an LNA, the MMIC offers an
easy matching, low noise solution.
Fig 2.
Application as IF amplifier
Fig 3.
Application as RF amplifier
BGA2801
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© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
4 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
8.2 Graphs
ꢈꢉꢇ
ꢌꢀ
ꢀꢋꢉ
ꢉꢋꢍ
ꢀꢁꢄꢇ
ꢌꢉꢋꢂ
ꢃꢄꢇ
ꢌꢉꢋꢄ
ꢌꢂ
ꢉꢋꢅ
ꢉꢋꢃ
ꢉꢋꢂ
ꢌꢄ
ꢉ
ꢉꢋꢂ
ꢉꢋꢄ
ꢀ
ꢂ
ꢄ
ꢀꢉ
ꢉꢇ
ꢉ
ꢀꢍꢉꢇ
ꢎꢀꢏ
ꢎꢁꢏ
ꢎꢂꢏ
ꢊ ꢄ
ꢊ ꢉꢋꢂ
ꢊ ꢂ
ꢊ ꢉꢋꢄ
ꢊ ꢀꢁꢄꢇ
ꢊ ꢃꢄꢇ
ꢊ ꢀ
ꢀꢋꢉ
ꢀꢀꢃDDPꢂꢇꢃ
ꢊ ꢈꢉꢇ
T
amb
= 25
C; I
CC
= 14.1 mA; V
CC
= 3.3 V; Z
0
= 50
.
(1) f
= 250 MHz
(2) f
= 950 MHz
(3) f
= 2150 MHz
Fig 4.
Input reflection coefficient (S
11
); typical values
BGA2801
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© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
5 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
ꢈꢉꢇ
ꢌꢀ
ꢀꢋꢉ
ꢉꢋꢍ
ꢀꢁꢄꢇ
ꢌꢉꢋꢂ
ꢃꢄꢇ
ꢌꢉꢋꢄ
ꢌꢂ
ꢉꢋꢅ
ꢉꢋꢃ
ꢉꢋꢂ
ꢌꢄ
ꢎꢁꢏ
ꢎꢀꢏ
ꢉ
ꢉꢋꢂ
ꢉꢋꢄ
ꢀ
ꢂ
ꢄ
ꢀꢉ
ꢉꢇ
ꢉ
ꢀꢍꢉꢇ
ꢎꢂꢏ
ꢊ ꢄ
ꢊ ꢉꢋꢂ
ꢊ ꢂ
ꢊ ꢉꢋꢄ
ꢊ ꢀꢁꢄꢇ
ꢊ ꢃꢄꢇ
ꢊ ꢀ
ꢀꢋꢉ
ꢀꢀꢃDDPꢂꢇꢂ
ꢊ ꢈꢉꢇ
T
amb
= 25
C; I
CC
= 14.1 mA; V
CC
= 3.3 V; Z
0
= 50
.
(1) f
= 250 MHz
(2) f
= 950 MHz
(3) f
= 2150 MHz
Fig 5.
Output reflection coefficient (S
22
); typical values
BGA2801
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© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
6 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
ꢀꢀꢃDDPꢂꢇꢆ
ꢀꢀꢃDDPꢂꢇꢈ
ꢁ
ꢀꢉ
ꢉ
.
5/
ꢇ
LQ
ꢎG%ꢏ
ꢎꢀꢏꢇ
ꢎꢂꢏꢇ
ꢎꢁꢏꢇ
ꢎꢃꢏꢇ
ꢎꢄꢏ
ꢂ
ꢀꢉ
ꢎꢀꢏ
ꢇ
ꢎꢂꢏ
ꢇ
ꢎꢁꢏ
ꢇ
ꢎꢃꢏ
ꢇ
ꢎꢄꢏ
ꢊ ꢀꢉ
ꢊ ꢂꢉ
ꢊ ꢁꢉ
ꢀꢉ
ꢀ
ꢊ ꢀ
ꢀꢉ
ꢉ
ꢀ
ꢂ
ꢁ
ꢉ
ꢀ
ꢂ
ꢁ
Iꢇꢎ*+]ꢏ
Iꢇꢎ*+]ꢏ
P
drive
=
40 dBm; Z
0
= 50
.
CC
= 3.0 V; T
amb
= 85
C; I
CC
= 12.52 mA
P
V
drive
=
40 dBm; Z
0
= 50
.
CC
= 3.0 V; T
amb
= 85
C; I
CC
= 12.52 mA
(1)
V
(1)
(2) V
CC
= 3.0 V; T
amb
=
40
C; I
CC
= 12.67 mA
(3) V
CC
= 3.3 V; T
amb
= 25
C; I
CC
= 14.08 mA
(4) V
CC
= 3.6 V; T
amb
= 85
C; I
CC
= 15.30 mA
(2) V
CC
= 3.0 V; T
amb
=
40
C; I
CC
= 12.67 mA
(3) V
CC
= 3.3 V; T
amb
= 25
C; I
CC
= 14.08 mA
(4) V
CC
= 3.6 V; T
amb
= 85
C; I
CC
= 15.30 mA
(5)
V
CC
= 3.6 V; T
amb
=
40
C; I
CC
= 16.51 mA
(5) V
CC
= 3.6 V; T
amb
=
40
C; I
CC
= 16.51 mA
Fig 6.
Rollett stability factor as function of
frequency; typical values
Fig 7.
Input return loss as function of frequency;
typical values
BGA2801
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© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
7 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
ꢀꢀꢃDDPꢂꢇꢁ
ꢀꢀꢃDDPꢂꢇꢅ
ꢁꢉ
ꢉ
* ꢇ
S
ꢎG%ꢏ
5/
ꢇ
RXW
ꢎꢀꢏꢇ
ꢎꢂꢏꢇ
ꢎꢁꢏꢇ
ꢎꢃꢏꢇ
ꢎꢄꢏ
ꢎG%ꢏ
ꢊ ꢀꢉ
ꢊ ꢂꢉ
ꢊ ꢁꢉ
ꢎꢀꢏꢇ
ꢎꢂꢏꢇ
ꢎꢁꢏꢇ
ꢎꢃꢏꢇ
ꢎꢄꢏ
ꢂꢄ
ꢂꢉ
ꢉ
ꢀ
ꢂ
ꢁ
ꢉ
ꢀ
ꢂ
ꢁ
Iꢇꢎ*+]ꢏ
Iꢇꢎ*+]ꢏ
P
drive
=
40 dBm; Z
0
= 50
.
CC
= 3.0 V; T
amb
= 85
C; I
CC
= 12.52 mA
P
V
drive
=
40 dBm; Z
0
= 50
.
CC
= 3.0 V; T
amb
= 85
C; I
CC
= 12.52 mA
(1)
V
(1)
(2) V
CC
= 3.0 V; T
amb
=
40
C; I
CC
= 12.67 mA
(3) V
CC
= 3.3 V; T
amb
= 25
C; I
CC
= 14.08 mA
(4) V
CC
= 3.6 V; T
amb
= 85
C; I
CC
= 15.30 mA
(2) V
CC
= 3.0 V; T
amb
=
40
C; I
CC
= 12.67 mA
(3) V
CC
= 3.3 V; T
amb
= 25
C; I
CC
= 14.08 mA
(4) V
CC
= 3.6 V; T
amb
= 85
C; I
CC
= 15.30 mA
(5)
V
CC
= 3.6 V; T
amb
=
40
C; I
CC
= 16.51 mA
(5) V
CC
= 3.6 V; T
amb
=
40
C; I
CC
= 16.51 mA
Fig 8.
Output return loss as function of frequency;
typical values
Fig 9.
Insertion power gain as function of frequency;
typical values
BGA2801
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© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
8 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
ꢀꢀꢃDDPꢂꢇꢄ
ꢀꢀꢃDDPꢂꢇꢇ
ꢉ
ꢅ
ꢄ
ꢃ
ꢁ
ꢂ
ꢎꢄꢏꢇ
,6/ꢇ
1)ꢇ
ꢎG%ꢏ
ꢎꢃꢏ
ꢇ
ꢎG%ꢏ
ꢎꢁꢏ
ꢇ
ꢎꢂꢏ
ꢇ
ꢊ ꢂꢉ
ꢎꢀꢏꢇ
ꢎꢃꢏ
ꢎꢀꢏ
ꢎꢁꢏ
ꢊ ꢃꢉ
ꢊ ꢅꢉ
ꢎꢂꢏꢇ
ꢎꢄꢏ
ꢊ ꢍꢉ
ꢀ
ꢂ
ꢁ
ꢉ
ꢀ
ꢂ
ꢁ
Iꢇꢎ*+]ꢏ
Iꢇꢎ*+]ꢏ
P
drive
=
40 dBm; Z
0
= 50
.
Z
0
= 50
.
(1)
V
CC
= 3.0 V; T
amb
= 85
C; I
CC
= 12.52 mA
(1) V
CC
= 3.0 V; T
amb
= 85
C; I
CC
= 12.52 mA
(2) V
CC
= 3.0 V; T
amb
=
40
C; I
CC
= 12.67 mA
(3) V
CC
= 3.3 V; T
amb
= 25
C; I
CC
= 14.08 mA
(4) V
CC
= 3.6 V; T
amb
= 85
C; I
CC
= 15.30 mA
(2) V
CC
= 3.0 V; T
amb
=
40
C; I
CC
= 12.67 mA
(3) V
CC
= 3.3 V; T
amb
= 25
C; I
CC
= 14.08 mA
(4) V
CC
= 3.6 V; T
amb
= 85
C; I
CC
= 15.30 mA
(5)
V
CC
= 3.6 V; T
amb
=
40
C; I
CC
= 16.51 mA
(5) V
CC
= 3.6 V; T
amb
=
40
C; I
CC
= 16.51 mA
Fig 10.
Isolation as function of frequency;
typical values
Fig 11.
Noise figure as function of frequency;
typical values
8.3 Tables
Table 7.
Supply current over temperature and supply voltages
Typical values.
Symbol
Parameter
Conditions
T
amb
(
C)
40
Unit
+25
+85
I
CC
supply current
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
12.67
14.85
16.51
12.24
14.08
15.65
12.52
14.27
15.30
mA
mA
mA
Table 8.
Second harmonic output power over temperature and supply voltages
Typical values.
Symbol Parameter
Conditions
T
amb
(
C)
40 +25 +85
Unit
P
L(2H)
second harmonic output power
f = 250 MHz; P
drive
=
33 dBm
V
CC
= 3.0 V
V
CC
= 3.3 V
53
58
59 dBm
56
60
59 dBm
58
60
59 dBm
V
CC
= 3.6 V
f = 950 MHz; P
drive
=
33 dBm
V
CC
= 3.0 V
46
50
54 dBm
47
50
53 dBm
47
49
52 dBm
V
CC
= 3.3 V
V
CC
= 3.6 V
BGA2801
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
9 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
Table 9.
Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter
Conditions
T
amb
(
C)
Unit
40
+25
+85
P
i(1dB)
input power at 1 dB gain compression
f = 250 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
f = 950 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
f = 2150 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
20
20
19
20
19
19
20
19
19
dBm
dBm
dBm
20
20
19
20
20
19
20
20
19
dBm
dBm
dBm
22
21
21
22
21
21
22
22
22
dBm
dBm
dBm
Table 10.
Output power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter
Conditions
T
amb
(
C)
40 +25
Unit
+85
P
L(1dB)
output power at 1 dB gain compression
f = 250 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
f = 950 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
f = 2150 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
1
2
3
1
2
3
0
1
2
dBm
dBm
dBm
1
2
3
0
2
3
0
1
2
dBm
dBm
dBm
0
1
2
1
0
2
1
0
dBm
dBm
dBm
1
BGA2801
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
10 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
Table 11.
Saturated output power over temperature and supply voltages
Typical values.
Symbol
Parameter
Conditions
T
amb
(
C)
Unit
40
+25
+85
P
L(sat)
saturated output power
f = 250 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
f = 950 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
f = 2150 MHz
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
3
4
5
3
4
5
3
4
5
dBm
dBm
dBm
3
4
5
3
4
5
2
3
4
dBm
dBm
dBm
2
3
4
1
2
3
0
1
1
dBm
dBm
dBm
Table 12.
Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter
Conditions
T
amb
(
C)
Unit
40 +25 +85
IM2
second-order intermodulation distance
f
1
= 250 MHz;
f
2
= 251 MHz;
P
drive
=
36 dBm
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
48 48
52 45
49 44
42
41
41
dBc
dBc
dBc
f
1
= 950 MHz;
f
2
= 951 MHz;
P
drive
=
36 dBm
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
38 38
40 39
41 39
36
37
37
dBc
dBc
dBc
BGA2801
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Product data sheet
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BGA2801
NXP Semiconductors
MMIC wideband amplifier
Table 13.
Output third-order intercept point over temperature and supply voltages
Typical values.
Symbol Parameter
Conditions
T
amb
(
C)
Unit
40 +25 +85
IP3
O
output third-order intercept point
f
1
= 250 MHz;
f
2
= 251 MHz;
P
drive
=
36 dBm
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
13
15
16
13
14
15
12
14
14
dBm
dBm
dBm
f
1
= 950 MHz;
f
2
= 951 MHz;
P
drive
=
36 dBm
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
13
15
16
12
14
15
12
13
14
dBm
dBm
dBm
f
1
= 2150 MHz;
f
2
= 2151 MHz;
P
drive
=
36 dBm
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
9
8
7
8
8
dBm
dBm
dBm
11
12
9
10
Table 14.
3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol
Parameter
Conditions
T
amb
(
C)
40
Unit
+25
+85
B
3dB
3 dB bandwidth
V
CC
= 3.0 V
V
CC
= 3.3 V
V
CC
= 3.6 V
2.875
2.902
2.920
2.832
2.849
2.866
2.745
2.763
2.775
GHz
GHz
GHz
BGA2801
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Product data sheet
Rev. 5 — 13 July 2015
12 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
9. Test
information
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Fig 12.
PCB layout and demo board with components
Table 15.
List of components used for the typical application
Component
C1, C2
C3
Description
Value
100 pF
22 nF
Dimensions
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
BGA2801 MMIC
0603
0603
IC1
SOT363
BGA2801
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© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 13 July 2015
13 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
10. Package outline
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Fig 13.
Package outline SOT363
BGA2801
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Product data sheet
Rev. 5 — 13 July 2015
14 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
11. Abbreviations
Table 16.
Abbreviations
Acronym
DC
Description
Direct Current
IF
Intermediate Frequency
Low-Noise Amplifier
Low-Noise Block converter
Printed-Circuit Board
Radio Frequency
LNA
LNB
PCB
RF
SMD
Surface Mounted Device
12. Revision history
Table 17.
Revision history
Document ID
BGA2801 v.5
Modifications:
Release date
20150713
Data sheet status
Change notice
Supersedes
Product data sheet
–
BGA2801 v.4
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BGA2801 v.4
BGA2801 v.3
BGA2801 v.2
BGA2801 v.1
20141209
20120419
20101029
20100817
Product data sheet
Product data sheet
Product data sheet
Product data sheet
–
–
–
–
BGA2801 v.3
BGA2801 v.2
BGA2801 v.1
–
BGA2801
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Product data sheet
Rev. 5 — 13 July 2015
15 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
13. Legal information
13.1 Data
sheet status
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Suitability for use —
NXP Semiconductors products are not designed,
13.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BGA2801
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Product data sheet
Rev. 5 — 13 July 2015
16 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
BGA2801
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Product data sheet
Rev. 5 — 13 July 2015
17 of 18
BGA2801
NXP Semiconductors
MMIC wideband amplifier
15. Contents
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V.
2015.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 July 2015
Document identifier: BGA2801
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