NXP-Semicon-BGA7130118
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BGA7130
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
HVSON8
Rev. 1 — 9 October 2012
Product data sheet
1. General
description
The MMIC
is a single-stage amplifier, offered in a leadless surface-mount package. It
delivers 30 dBm output power at 1 dB gain compression and a superior performance up to
2700 MHz. Its power saving features include simple quiescent current adjustment and
logic-level shutdown control to reduce the supply current to 4
A.
2. Features
and benefits
400 MHz to 2700 MHz frequency operating range
Integrated active biasing
External matching allows broad application optimization of the electrical performance
5 V single supply operation
Power-down
Excellent robustness:
All pins ESD protected (HBM 6 kV; CDM 2 kV)
Withstands mismatch of VSWR 50 : 1 through all phases
Withstands electrical over-stress peaks of 7 V on the supply voltage
3. Applications
In this data sheet two base station applications are described, namely LTE at 750 MHz
and UMTS at 2140 MHz. The BGA7130 is also suited for a range of other applications:
Wireless infrastructure (base station, repeater, backhaul systems)
Broadband CPE / MoCA
Industrial applications
WLAN / ISM / RFID
Satellite Master Antenna TV (SMATV)
4. Quick
reference data
Table 1.
Quick reference data
4.75 V
V
SUP
5.25 V;
40
C
T
case
+85
C; P
i
<
20 dBm; R3 = 523
(tolerance 1 %); input and output impedances
matched to 50
(see
Section 14
); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Unit
[1]
[2]
[2]
[2]
V
SUP
supply voltage
4.75
–
5.25 V
I
CC(tot)
total supply current
390 450 510 mA
500
R3
4.7 k
50
–
–
550 mA
A
500
R3
4.7 k
; pin ENABLE = LOW
4
6
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Table 1.
Quick reference data
…continued
4.75 V
V
SUP
5.25 V;
40
C
T
case
+85
C; P
i
<
20 dBm; R3 = 523
(tolerance 1 %); input and output impedances
matched to 50
(see
Section 14
); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
T
case
case temperature
f frequency
Measured at LTE-750 MHz (see
Section 14
)
Conditions
Min Typ Max
Unit
[3]
40 +25 +85
C
400
–
2700 MHz
[4]
f
frequency
728 748 768 MHz
G
p
power gain
728 MHz
f
768 MHz
17
27
39
20
23
–
dB
P
L(1dB)
output power at 1 dB gain compression
728 MHz
f
768 MHz
30.5
42.5
dBm
dBm
IP3
O
output third-order intercept point
728 MHz
f
768 MHz;
P
L
= 19 dBm per tone;
tone spacing = 1 MHz
–
Measured at UMTS-2140 MHz (see
Section 14
)
[5]
f
frequency
2110 2140 2170 MHz
G
p
power gain
2110 MHz
f
2170 MHz
9
12
30
15
–
dB
P
L(1dB)
output power at 1 dB gain compression
2110 MHz
f
2170 MHz
27
dBm
dBm
IP3
O
output third-order intercept point
2110 MHz
f
2170 MHz;
P
L
= 19 dBm per tone;
tone spacing = 1 MHz
40.5 44
–
[1] Supply
voltage on pins RF_OUT and V
CC
.
[2] Current
through pins RF_OUT and V
CC
.
[3] T
case
is the temperature at the soldering point of the exposed die pad.
[4] Covering
downlink frequency range of eUTRAN bands 11, 13, 14 and 17.
[5] Covering
downlink frequency range of eUTRAN bands 1, 4 and 10.
5. Design
support
Table 2.
Available design support
Support item
Available
Remarks
[1]
[1]
[1]
[1]
Device models for Agilent EEsof EDA ADS
planned
Device models for AWR Microwave Office
no
Device models for ANSYS Ansoft designer
no
Based on Mextram device model.
Based on Mextram device model.
Based on Mextram device model.
SPICE model
planned
yes
Based on Gummel-Poon device model.
S-parameters
Noise parameters
Customer evaluation kit
Gerber files
yes
yes
See
Section 6
and
Section 14
.
yes
Gerber files of boards provided with the customer evaluation kit.
Solder pattern
yes
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
2 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
6. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BGA7130
HVSON8 plastic
thermal enhanced very thin small outline package;
SOT908-3
no leads; 8 terminals; body 3
3
0.85 mm
OM7941/BGA7130LTE
OM7942/BGA7130WCDMA
–
–
Customer evaluation kit for BGA7130 in a 750 MHz LTE
application
[1]
–
–
Customer evaluation kit for BGA7130 in a 2140 MHz UMTS
application
[1]
[1] The
customer evaluation kit contains the following:
a) Fully
populated and matched RF evaluation board
b) BGA7130
samples
7. Functional
diagram
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Fig 1.
Functional diagram
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
3 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
8. Pinning
information
8.1 Pinning
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Fig 2.
Pin configuration
8.2 Pin
description
Table 4.
Symbol
n.c.
Pin description
Pin
Description
not connected
[1]
1, 4
RF_OUT 2,
3
RF output and supply to the amplifier
[2]
V
CC
5
6
7
8
bias supply voltage
[3]
ENABLE
RF_IN
ICQ_ADJ
GND
enable
RF input
[2]
quiescent collector current adjustment by an external resistor
exposed die pad
ground
[4]
[1] This
pin can be connected to ground.
[2] This
pin requires an external DC-blocking capacitor.
[3] RF
decoupled.
[4] The
exposed die pad of the SOT908-3 also functions as heatsink for the power amplifier.
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
4 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
9. Functional
description
9.1 Supply
current adjustment
The supply current can be adjusted by changing the value of biasing resistor R3 which
connects pin ICQ_ADJ (pin 8) to ground (see
Figure 1
).
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V
SUP
= 5 V; T
amb
= 25
C.
Fig 3.
Supply current I
CC(tot)
as function of biasing resistor R3; typical values
9.2 Enable
control
The BGA7130 can be powered down using enable pin 6 (ENABLE). In case this control
function is not needed the enable pin can be connected to the bias supply voltage pin 5
(V
CC
). The current through the enable pin 6 should never exceed 20 mA as this might
damage the ESD protection circuitry. This can be avoided either by preventing the voltage
on this pin to exceed the supply voltage (V
SUP
) or by adding a series resistor.
Table 5.
Enable truth table
Logic level on pin ENABLE (pin 6)
Status BGA7130
powered down
powered on
LOW
HIGH
10. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
0.5
0
Max
+7
Unit
V
[1]
V
SUP
V
I(dig)
I
I(dig)
supply voltage
[2][4]
[3][4]
digital input voltage
digital input current
total supply current
V
SUP
+20
1000
V
20
–
mA
mA
I
CC(tot)
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
5 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
18
Unit
dBm
dBm
C
P
i(RF)
RF input power
f = 750 MHz; switched
f = 2140 MHz; switched
–
–
25
T
stg
T
j
storage temperature
65
+150
150
6
junction temperature
–
–
C
V
ESD
electrostatic discharge voltage
Human Body Model (HBM);
kV
According JEDEC standard 22-A114E
Charged Device Model (CDM);
–
2
kV
According JEDEC standard 22-C101B
[1] Absolute
maximum DC voltage on pins RF_OU
T
,
I
CQ_ADJ and V
CC
[2] Absolute
maximum DC voltage on pin ENABLE.
.
[3] Absolute
maximum DC current through pin ENABLE.
[4] If
V
I(dig)
exceeds V
SUP
the internal ESD protection circuit can be damaged. The pin ENABLE can be connected to V
CC
in case the
enable control function is not used (see
Section 9.2
).
11. Thermal
characteristics
Table 7.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
K/W
R
th(j-case)
thermal resistance from junction to case
T
case
< 85
C
6
12. Static characteristics
Table 8.
Static characteristics
4.75 V
V
SUP
5.25 V;
40
C
T
case
+85
C; P
i
<
20 dBm; R3 = 523
(tolerance 1 %); input
and output impedances matched to 50
(see
Section 14
); pin ENABLE = HIGH; unless otherwise
specified.
Symbol
V
SUP
Parameter
Conditions
Min Typ
Max
5.25
510
550
6
Unit
V
[1]
[2]
[2]
[2]
supply voltage
total supply current
4.75
–
I
CC(tot)
390 450
mA
mA
A
0
R3
5 k
30
–
–
0
R3
5 k
;
4
pin ENABLE = LOW
[3]
T
case
I
CC
case temperature
supply current
40 +25
+85
C
mA
mA
A
V
on pin RF_OUT
on pin V
CC
–
420
–
–
30
–
–
on pin ENABLE
–
3
[4]
[4]
V
IL
V
IH
LOW-level input voltage
HIGH-level input voltage
0
–
0.7
V
SUP
2.5
–
V
[1] Supply
voltage on pins RF_OUT and V
CC
.
[2] Current
through pins RF_OUT and V
CC
.
[3] T
case
is the temperature at the soldering point of the exposed die pad.
[4] On
digital input pin ENABLE.
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
6 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
13. Dynamic characteristics
Table 9.
Dynamic characteristics
4.75 V
V
SUP
5.25 V;
40
C
T
case
85
C; P
i
<
20 dBm; R3 = 523
(tolerance 1 %); input and output impedances
matched to 50
(see
Section 14
); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
frequency
Measured at LTE-750 MHz (see
Section 14
)
Conditions
Min Typ Max
Unit
400 2700
MHz
f
–
[1]
f
frequency
728 748 768 MHz
G
p
power gain
728 MHz
f
768 MHz
17
–
20
23
–
dB
728 MHz
f
768 MHz; pin ENABLE = LOW
728 MHz
f
768 MHz
18
30.5
dB
P
L(1dB)
IP3
O
output power at 1 dB gain
compression
27
–
dBm
output third-order intercept point
728 MHz
f
768 MHz; P
L
= 15 dBm per tone;
39
–
42.5
2
–
–
dBm
%
tone spacing = 1 MHz
EVM
error vector magnitude
E-UTRA
T
e
st Model (E-TM) 3.1 LTE;
P
L(AV)
= 20 dBm
NF
noise figure
728 MHz
f
768 MHz
–
–
–
–
–
–
–
–
5
–
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
s
RL
in
input return loss
728 MHz
f
768 MHz
6
728 MHz
f
768 MHz; pin ENABLE = LOW
728 MHz
f
768 MHz
1
RL
out
ISL
output return loss
isolation
10
0.5
29
18
3
728 MHz
f
768 MHz; pin ENABLE = LOW
728 MHz
f
768 MHz
728 MHz
f
768 MHz; pin ENABLE = LOW
t
d(pu)
t
d(pd)
power-up delay time
after pin ENABLE is switched to logic HIGH;
to within 0.1 dB of final gain state.
power-down delay time
after pin ENABLE is switched to logic LOW;
to within 0.1 dB of final gain state.
–
0.5
–
s
Measured at UMTS-2140 MHz (see
Section 14
)
[2]
f
frequency
2110 2140 2170 MHz
G
p
power gain
2110 MHz
f
2170 MHz
9
12
15
–
dB
2110 MHz
f
2170 MHz; pin ENABLE = LOW
2110 MHz
f
2170 MHz
–
15
30
dB
P
L(1dB)
IP3
O
output power at 1 dB gain
compression
27
–
dBm
output third-order intercept point
2110 MHz
f
2170 MHz;
P
L
= 15 dBm per tone; tone spacing = 1 MHz
41
44
–
dBm
[3]
ACPR
NF
adjacent channel power ratio
noise figure
2110 MHz
f
2170 MHz
–
–
–
–
–
–
60
5
–
–
–
–
–
–
dBc
dB
dB
dB
dB
dB
2110 MHz
f
2170 MHz
RL
in
input return loss
2110 MHz
f
2170 MHz
6
2110 MHz
f
2170 MHz; pin ENABLE = LOW
2110 MHz
f
2170 MHz
3
RL
out
output return loss
10
1
2110 MHz
f
2170 MHz; pin ENABLE = LOW
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
7 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Table 9.
Dynamic characteristics
…continued
4.75 V
V
SUP
5.25 V;
40
C
T
case
85
C; P
i
<
20 dBm; R3 = 523
(tolerance 1 %); input and output impedances
matched to 50
(see
Section 14
); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Unit
ISL
isolation
2110 MHz
f
2170 MHz
2110 MHz
f
2170 MHz; pin ENABLE = LOW
–
–
–
24
15
3
–
–
–
dB
dB
s
t
d(pu)
t
d(pd)
power-up delay time
after pin ENABLE is switched to logic HIGH;
to within 0.1 dB of final gain state.
power-down delay time
after pin ENABLE is switched to logic LOW;
to within 0.1 dB of final gain state.
–
0.5
–
s
[1] Covering
downlink frequency range of eUTRAN bands 11, 13, 14 and 17.
[2] Covering
downlink frequency range of eUTRAN bands 1, 4 and 10.
[3] Two
carrier W-CDMA; each carrier according to 3GPP test model 1; 64 DPCH; PAR for composite signal = 7 dB; 5 MHz carrier spacing.
14. Application information
The BGA7130 can be used for a wide variety of applications. This section describes two
example base station applications: LTE at 750 MHz and UMTS at 2140 MHz. It serves as
a pre-driver for the high-power amplifier in the Base Transceiver Station (BTS), see
Figure 4
.
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Fig 4.
Simplified schematic representation of a Base Transceiver Station (BTS)
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
8 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
The LTE 750 MHz circuit described here is matched for the downlink frequency range of
band 12, 13, 14 and 17 as defined in the evolved UMTS
T
e
rrestrial Radio Access Network
(eUTRAN) air interface of Long
T
e
rm Evolution (LTE) mobile networks. These bands are
used in the United States and are expected to be used in Canada in the future. Band 12,
13 and 14 are commonly referred to as SMH bands.
Table 10.
Covered LTE downlink bands
eUTRAN band
XII (12) – SMH
XIII (13) – SMH
XIV (14) – SMH
XVII (17)
Uplink
Downlink
Region
698 MHz to 716 MHz
776 MHz to 787 MHz
788 MHz to 798 MHz
704 MHz to 716 MHz
728 MHz to 746 MHz
746 MHz to 757 MHz
758 MHz to 768 MHz
734 MHz to 746 MHz
United States, Canada
United States, Canada
United States, Canada
United States, Canada
The UMTS 2140 MHz circuit described here is matched for the downlink frequency range
of band 1, 4 and 10 as defined in the evolved UMTS
T
e
rrestrial Radio Access Network
(eUTRAN) air interface of the Universal Mobile
T
e
lecommunications System (UMTS)
mobile networks.
Table 11.
Covered UMTS bands
eUTRAN band
Uplink
Downlink
Region
I (1) – UMTS
IV (4) – AWS
1920 MHz to 1980 MHz
2110 MHz to 2170 MHz
2110 MHz to 2155 MHz
Japan, Europe, Asia
1710 MHz to 1755 MHz
United States, Canada,
Latin America
X (10) – UMTS
1710 MHz to 1770 MHz
2110 MHz to 2170 MHz
Uruguay, Ecuador, Peru
14.1 Application
board
Customer evaluation boards are available from NXP (see
Section 6 “Ordering
information”
). The BGA7130 shall be decoupled and matched as depicted in
Figure 5
. The
ground leads and exposed paddle should be connected directly to the ground plane.
Enough via holes should be provided to connect top and bottom ground planes in the final
application board. Sufficient cooling should be provided preventing the temperature of the
exposed die pad from exceeding 85
C.
The LTE-750 and UMTS-2140 application boards differ in input and output matching
topology have the same input and output matching topology.
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
9 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
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ꢑꢝꢛꢖ
ꢉꢓ
ꢑꢝꢛ/
ꢛꢓ
ꢑꢝꢛꢙ
ꢑꢝꢛꢜ
ꢉ/
ꢑꢝꢛ!
ꢌꢎꢏꢊꢐꢍ
!
ꢓꢔꢕꢖ
ꢌꢎꢏꢈꢂ
ꢚ
ꢈꢉꢗꢏꢁꢃꢘ
ꢄꢂꢃ
ꢌꢖ
ꢀꢀꢀꢁꢂꢂꢃꢄꢉꢅ
See
T
a
ble 12
for list of components.
Fig 5.
Application diagram of customer evaluation board for LTE-750 application
ꢆ
ꢝꢐꢅ
ꢉꢚ
ꢌꢓ
ꢆ
ꢙ
ꢌ/
ꢋꢂꢁꢀꢛꢋ
ꢜ
ꢉꢉ
ꢈꢉ
ꢉ!
ꢉꢜ
ꢆꢇꢈ
ꢀꢁꢂꢃꢄꢁꢅ
ꢉꢊꢂꢆꢋꢌꢍꢋꢌ
ꢛ
:ꢓ
ꢉ
ꢉꢙ
:
ꢑꢝꢛ
ꢑꢝꢛꢓ
ꢑꢝꢛꢖ
ꢑꢝꢛ/
ꢑꢝꢛꢙ
ꢌꢎꢏꢊꢐꢍ
!
ꢓꢔꢕꢖ
ꢌꢎꢏꢈꢂ
ꢉꢓ
ꢚ
ꢈꢉꢗꢏꢁꢃꢘ
ꢄꢂꢃ
ꢉꢖ
ꢉ/
ꢌꢖ
ꢀꢀꢀꢁꢂꢂꢃꢄꢉꢉ
See
T
a
ble 12
for list of components.
Fig 6.
Application diagram of customer evaluation board for UMTS-2140 application
The Printed-Circuit Board (PCB) is a four metal layer substrate board as described in
Figure 7
. The width and the gap between the strip-line and ground plane are configured
such that a 50 ohm transmission line is obtained.
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
10 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
*A%+;?Aꢕ,-&
ꢌꢎꢕ&”2ꢕ&”&1+?ꢕ%+;*-“?
ꢖꢙꢕꢟ0ꢕꢉ;ꢕ@ꢕ4#ꢖꢕꢟ0ꢕꢁ;
4#ꢙ ꢕ00ꢕꢌꢊ/44ꢖꢉ
ꢌꢎꢕ&”2ꢕ&”&1+?ꢕ?%+;”2
&”&1+?ꢕ%+;*-“?
ꢖꢙꢕꢟ0ꢕꢉ;
4#ꢓꢕ00ꢕ(%)()?
ꢖꢙꢕꢟ0ꢕꢉ;
4# ꢙꢕ00ꢕꢎꢌ/
ꢌꢎꢕ&”2ꢕ&”&1+?ꢕ?%+;”2
ꢖꢙꢕꢟ0ꢕꢉ;ꢕ@ꢕ4#ꢖꢕꢟ0ꢕꢁ;
ꢀꢀꢀꢁꢂꢂꢃꢄꢉꢃ
Fig 7.
Printed-Circuit Board (PCB) stack build
ꢘꢖ
ꢌꢓ
ꢉꢚ
ꢌ/
ꢉ!
ꢉꢜ
ꢘ
ꢘꢓ
ꢛ
ꢑꢝꢛꢙ
ꢑꢝꢛꢜ
ꢛꢓ
ꢉ/
ꢉꢙ
ꢓ
ꢖ
/
ꢙ
ꢜ
!
ꢚ
9
4
ꢌ
ꢑꢝꢛꢓ
ꢉꢓ
<
ꢘ
ꢑꢝꢛ
ꢑꢝꢛꢖ
ꢑꢝꢛ/
ꢑꢝꢛ!
ꢉ
ꢉꢖ
ꢅ
ꢊ
ꢂ
ꢑ
ꢛ
ꢈ
ꢒ
ꢄ
ꢎ
ꢋ
ꢃ
ꢉ
ꢀ
ꢁ
ꢌꢎ-“
ꢌꢎ+;*
ꢌꢖ
ꢇ/
ꢂ:ꢅꢕꢝꢋꢑꢈꢉꢊꢂꢃꢐꢉꢍꢊꢌꢝ
ꢀꢄꢁꢕꢝꢊꢍ94ꢚꢕꢌ),#4ꢖ
ꢀꢀꢀꢁꢂꢂꢃꢄꢉꢊ
Fig 8.
Top view of populated LTE-750 Printed-Circuit Board (PCB)
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
11 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢘꢖ
ꢌꢓ
ꢉꢚ
ꢌ/
ꢉ!
ꢉꢜ
ꢘ
ꢘꢓ
ꢛ
ꢑꢝꢛ/
ꢑꢝꢛꢖ
ꢉꢖ
ꢑꢝꢛ
ꢑꢝꢛꢓ
ꢑꢝꢛꢙ
ꢉꢓ
ꢒ
ꢄ
ꢎ
ꢋ
ꢃ
ꢉ
ꢀ
ꢁ
ꢉ
ꢉ/
ꢉꢙ
ꢅ
ꢊ
ꢂ
ꢑ
ꢛ
<
ꢘ
ꢈ
ꢓ
ꢖ
/
ꢙ
ꢜ
!
ꢚ
9
4
ꢌꢎ-“
ꢌꢎ+;*
ꢌꢖ
ꢇ/
ꢂ:ꢅꢕꢝꢋꢑꢈꢉꢊꢂꢃꢐꢉꢍꢊꢌꢝ
ꢀꢄꢁꢕꢝꢊꢍ94ꢚꢕꢌ),#4ꢓ
ꢀꢀꢀꢁꢂꢂꢃꢄꢅꢆ
Fig 9.
Top view of populated LTE-2140 Printed-Circuit Board (PCB)
Table 12.
List of components
See
Figure 5
for schematics.
Component
Description
Value
Remarks
LTE-750
47 pF
UMTS-2140
C1, C5
C2
capacitor
15 pF
3.3 pF
0.82 pF
2.2 pF
10 nF
1
F
capacitor
12 pF
C3
capacitor
47 pF
C4
capacitor
10 pF
C6
capacitor
1 nF
C7
capacitor
100 nF
10
F
C8
capacitor
10
F
–
IC1
BGA7130
micro stripline
micro stripline
micro stripline
micro stripline
micro stripline
micro stripline
micro stripline
resistor
–
NXP
[1]
[1]
[1]
[1]
[1]
[1]
[1]
MSL1
MSL2
MSL3
MSL4
MSL5
MSL6
MSL7
R1
10.95 mm
1.5 mm
8.0 mm
6.3 mm
1.9 mm
2.0 mm
10.95 mm
47
10.95 mm
11.2 mm
3.3 mm
8.6 mm
10.95 mm
–
–
–
R2
resistor
240
523
240
523
R3
resistor
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
12 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Table 12.
List of components
…continued
See
Figure 5
for schematics.
Component
Description
Value
LTE-750
0
Remarks
UMTS-2140
R4
resistor
0
L1
RF choke
inductor
68 nH
1.5 nH
–
18 nH
L2
–
–
X1, X2
SMA connector
[1] length
(L) is specified, width (W) = 1.14 mm and spacing (S) = 0.8 mm.
14.2 Characteristics
LTE-750
ꢀꢀꢀꢁꢂꢂꢈꢅꢇꢊ
ꢀꢀꢀꢁꢂꢂꢈꢅꢇꢈ
ꢓꢙ
ꢓ4
ꢙ
4
ꢙ
8 4
ꢄ
ꢈꢝꢛ
(
52ꢀ7
52ꢀ7
8ꢓ4
5
7
5ꢓ7
8ꢖ4
8/4
8ꢙ4
5ꢖ7
5ꢖ7
5ꢓ7
5
7
4
4#ꢙ
4#ꢜ
4#!
4#ꢚ
4#9
#
4#ꢙ
4#ꢜ
4#!
4#ꢚ
4#9
#
Cꢕ5ꢄꢒD7
Cꢕ5ꢄꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
amb
=
40
C
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
=
40
C
(1)
T
(2) T
amb
= +25
C
(3) T
amb
= +85
C
(2) T
amb
= +25
C
(3) T
amb
= +85
C
Fig 10.
Power gain as a function of frequency for
LTE-750 application; typical values
Fig 11.
Isolation as a function of frequency for
LTE-750 application; typical values
BGA7130
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. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
13 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢀꢀꢀꢁꢂꢂꢈꢅꢇꢋ
ꢀꢀꢀꢁꢂꢂꢈꢅꢇꢄ
4
ꢓ
4
ꢓ
E
E
‘
‘
E
E
E
‘
‘
E
ꢓꢓ
52ꢀ7
52ꢀ7
8ꢙ
8ꢙ
5
7
5ꢓ7
5ꢖ7
5
7
5ꢓ7
5ꢖ7
8 4
8 ꢙ
8ꢓ4
8ꢓꢙ
8 4
8 ꢙ
8ꢓ4
8ꢓꢙ
4#ꢙ
4#ꢜ
4#!
4#ꢚ
4#9
#
4#ꢙ
4#ꢜ
4#!
4#ꢚ
4#9
#
Cꢕ5ꢄꢒD7
Cꢕ5ꢄꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(3)
T
amb
= +85
C
(3) T
amb
= +85
C
Fig 12.
Input return loss as a function of frequency for
LTE-750 application; typical values
Fig 13.
Output return loss as a function of frequency
for LTE-750 application; typical values
ꢀꢀꢀꢁꢂꢂꢈꢅꢇꢆ
ꢀꢀꢀꢁꢂꢂꢈꢅꢇꢇ
/ꢙ
/ꢙ
ꢈ
ꢈ
ꢅ
ꢅ
ꢖ
ꢖ
ꢈ
ꢈ
ꢅ
ꢅ
ꢖ
ꢖ
ꢊ
ꢊ
52ꢀ07
52ꢀ07
//
//
5
7
/ꢖ
/ꢓ
/
/4
/ꢖ
/ꢓ
/
/4
5ꢖ7
5ꢓ7
5ꢖ7
5ꢓ7
5
7
ꢜ94
! 4
!ꢖ4
!ꢙ4
!!4
!94
ꢚ 4
ꢜ94
! 4
!ꢖ4
!ꢙ4
!!4
!94
ꢚ 4
Cꢕ5ꢑꢒD7
Cꢕ5ꢑꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; P
L
= 19 dBm per tone;
T
amb
= 25
C; I
CC(tot)
= 450 mA; P
L
= 19 dBm per tone;
f = 748 MHz;
f = 1 MHz; matched for LTE-750.
f = 748 MHz;
f = 1 MHz; matched for LTE-750.
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(3) T
amb
= +85
C
(1) V
SUP
= 4.75 V
(2) V
SUP
= 5 V
(3) V
SUP
= 5.25 V
Fig 14.
Output third order intercept point as a function
of frequency for LTE-750 application; different
temperatures; typical values
Fig 15.
Output third order intercept point as a function
of frequency for LTE-750 application; different
supply voltages; typical values
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
14 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢂ
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢅ
/ꢙ
/ꢙ
ꢈꢅꢖ
ꢈꢅꢖ
ꢊ
ꢊ
52ꢀ07
52ꢀ07
//
//
/ꢖ
/ꢓ
/
/4
/ꢖ
/ꢓ
/
/4
5
7
5ꢓ7
5ꢖ7
5ꢖ7
5ꢓ7
5
7
ꢓ
/
ꢜ
ꢚ
ꢓ4
ꢓ
/
ꢜ
ꢚ
ꢓ4
ꢅ
ꢕ52ꢀ0ꢕ()%ꢕ*+”)7
ꢅ
ꢕ52ꢀ0ꢕ()%ꢕ*+”)7
ꢛ
ꢛ
V
SUP
= 5 V; I
CC(tot)
= 450 mA; f = 748 MHz;
f = 1 MHz;
matched for LTE-750.
T
amb
= 25
C; I
CC(tot)
= 450 mA; f = 748 MHz;
f = 1 MHz;
matched for LTE-750.
(1) V
SUP
= 4.75 V
(2)
SUP
= 5 V
(1) T
amb
=
40
C
(2)
amb
= +25
C
T
V
(3) T
amb
= +85
C
(3) V
SUP
= 5.25 V
Fig 16.
Output third order intercept point as a function
of output power for LTE-750 application;
different temperatures; typical values
Fig 17.
Output third order intercept point as a function
of output power for LTE-750 application;
different supply voltages; typical values
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢉ
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢃ
ꢖꢖ
ꢛ5
2ꢀ7
52ꢀ7
ꢖꢖ
ꢛ5
2ꢀ7
52ꢀ7
ꢅ
ꢅ
ꢅ
ꢅ
ꢖꢓ
ꢖꢓ
5
7
5ꢓ7
ꢖ
ꢖ4
ꢓ9
ꢓꢚ
ꢖ
ꢖ4
ꢓ9
ꢓꢚ
5ꢖ7
5ꢓ7
5
7
5ꢖ7
ꢜ94
! 4
!ꢖ4
!ꢙ4
!!4
!94
ꢚ 4
ꢜ94
! 4
!ꢖ4
!ꢙ4
!!4
!94
ꢚ 4
Cꢕ5ꢑꢒD7
Cꢕ5ꢑꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
=
40
C
(2)
amb
= +25
C
(3) T
amb
= +85
C
T
amb
= 25
C; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) V
SUP
= 4.75 V
(2)
SUP
= 5 V
(3) V
SUP
= 5.25 V
T
V
Fig 18.
Output power at 1 dB gain compression as a
function of frequency for LTE-750 application;
different temperatures; typical values
Fig 19.
Output power at 1 dB gain compression as a
function of frequency for LTE-750 application;
different supply voltages; typical values
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
15 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢊ
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢈ
ꢓ4
ꢂꢎ
52ꢀ7
ꢓ4
ꢂꢎ
52ꢀ7
ꢙ
4
ꢙ
ꢙ
4
ꢙ
5ꢖ7
5ꢓ7
5
7
5ꢖ7
5ꢓ7
5
7
4
4
4#ꢙ
4#ꢜ
4#!
4#ꢚ
Cꢕ5ꢄꢒD7
4#9
4#ꢙ
4#ꢜ
4#!
4#ꢚ
4#9
Cꢕ5ꢄꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(3)
amb
= +85
C
T
amb
= 25
C; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) V
SUP
= 4.75 V
(2) V
SUP
= 5 V
(3)
SUP
= 5.25 V
T
V
Fig 20.
Noise figure as a function of frequency for
LTE-750 application; different temperatures;
typical values
Fig 21.
Noise figure as a function of frequency for
LTE-750 application; different supply voltages;
typical values
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢋ
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢄ
!
ꢙ
!4
ꢆ
ꢆ
!
ꢙ
!4
ꢆ
ꢆ
ꢆ
ꢆ
ꢈ52-?7
5ꢆ7
ꢆ
ꢆ
ꢈ52-?7
5ꢆ7
ꢈ5ꢌꢎꢊꢐꢍ7
50ꢆ7
ꢈ5ꢌꢎꢊꢐꢍ7
50ꢆ7
ꢙ4
ꢖ4
4
8 4
ꢙ4
ꢖ4
4
8 4
ꢖ
ꢖ
ꢕꢆ
ꢆ
ꢈ5ꢌꢎꢊꢐꢍ7
ꢕꢆ
ꢈ52-?7ꢕ
ꢆ
ꢈ5ꢌꢎꢊꢐꢍ7
ꢈ52-?7ꢕ
8
8
8ꢖ
8ꢓ
8
4
ꢓ
ꢖ
/
ꢙ
8ꢖ
8ꢓ
8
4
ꢓ
ꢖ
/
ꢙ
*ꢕ5ꢠ’7
*ꢕ5ꢠ’7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
Fig 22.
Power-on delay time; typical values
Fig 23.
Power-down delay time; typical values
BGA7130
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© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
16 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢆ
ꢀꢀꢀꢁꢂꢂꢈꢉꢂꢇ
4
4
ꢓꢓ
ꢓ
ꢓ
ꢄ
ꢄ
ꢔꢕꢈꢝꢛ
(
52ꢀ7
ꢕE’
E
ꢔꢕE’
E
52ꢀ7
8 4
5ꢓ7
5
7
8/
8ꢓ4
8ꢖ4
8/4
8ꢙ4
8ꢜ4
5
7
5ꢓ7
8ꢚ
8 ꢓ
8 ꢜ
4#ꢙ
4#ꢜ
4#!
4#ꢚ
4#9
#
4#ꢙ
4#ꢜ
4#!
4#ꢚ
4#9
#
Cꢕ5ꢄꢒD7
Cꢕ5ꢄꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; pin ENABLE = LOW;
matched for LTE-750.
V
SUP
= 5 V; I
CC(tot)
= 450 mA; pin ENABLE = LOW;
matched for LTE-750.
(1) G
p
(2) ISL
(1)
s
11
2
(2)
s
22
2
Fig 24.
Isolation in power-down mode; typical values
Fig 25.
Return loss in power-down mode; typical
values
14.3 Characteristics
UMTS-2140
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢂ
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢅ
ꢓꢙ
4
ꢄ
ꢈꢝꢛ
52ꢀ7
(
52ꢀ7
ꢓ4
ꢙ
4
ꢙ
8 4
5
7
5ꢓ7
5ꢖ7
5
7
5ꢓ7
5ꢖ7
8ꢓ4
8ꢖ4
8/4
8ꢙ4
4
#ꢚ
#9
ꢓ
ꢓ#
ꢓ#ꢓ
ꢓ#ꢖ
ꢓ#/
ꢓ#ꢙ
#ꢚ
#9
ꢓ
ꢓ#
ꢓ#ꢓ
ꢓ#ꢖ
ꢓ#/
ꢓ#ꢙ
Cꢕ5ꢄꢒD7
Cꢕ5ꢄꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(3)
amb
= +85
C
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(3)
T
amb
= +85
C
T
Fig 26.
Power gain as a function of frequency for
UMTS-2140 application; typical values
Fig 27.
Isolation as a function of frequency for
UMTS-2140 application; typical values
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
17 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢉ
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢃ
4
ꢓ
4
ꢓ
E
E
‘
‘
E
E
E
‘
‘
E
ꢓꢓ
52ꢀ7
52ꢀ7
8ꢙ
8ꢙ
8 4
8 ꢙ
8ꢓ4
8ꢓꢙ
8 4
8 ꢙ
8ꢓ4
8ꢓꢙ
5
7
5ꢓ7
5ꢖ7
5
7
5ꢓ7
5ꢖ7
#ꢚ
#9
ꢓ
ꢓ#
ꢓ#ꢓ
ꢓ#ꢖ
ꢓ#/
ꢓ#ꢙ
#ꢚ
#9
ꢓ
ꢓ#
ꢓ#ꢓ
ꢓ#ꢖ
ꢓ#/
ꢓ#ꢙ
Cꢕ5ꢄꢒD7
Cꢕ5ꢄꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(3)
T
amb
= +85
C
(3) T
amb
= +85
C
Fig 28.
Input return loss as a function of frequency for
UMTS-2140 application; typical values
Fig 29.
Output return loss as a function of frequency
for UMTS-2140 application; typical values
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢊ
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢈ
/ꢚ
/ꢚ
ꢈ
ꢈ
ꢅ
ꢅ
ꢖ
ꢖ
ꢈ
ꢈ
ꢅ
ꢅ
ꢖ
ꢖ
ꢊ
ꢊ
52ꢀ07
52ꢀ07
/ꢜ
/ꢜ
5
7
5ꢖ7
5ꢓ7
5ꢖ7
5ꢓ7
5
7
//
/ꢓ
/4
//
/ꢓ
/4
ꢓ 44
ꢓ ꢓ4
ꢓ /4
ꢓ ꢜ4
Cꢕ5ꢑꢒD7
ꢓ ꢚ4
ꢓ 44
ꢓ ꢓ4
ꢓ /4
ꢓ ꢜ4
Cꢕ5ꢑꢒD7
ꢓ ꢚ4
V
SUP
= 5 V; I
CC(tot)
= 450 mA; P
L
= 15 dBm per tone;
T
amb
= 25
C; I
CC(tot)
= 450 mA; P
L
= 15 dBm per tone;
f = 1 MHz; matched for UMTS-2140.
f = 1 MHz; matched for UMTS-2140.
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(3) T
amb
= +85
C
(1) V
SUP
= 4.75 V
(2) V
SUP
= 5 V
(3) V
SUP
= 5.25 V
Fig 30.
Third order intermodulation distortion as a
function of frequency for UMTS-2140
application; different temperatures; typical
values
Fig 31.
Third order intermodulation distortion as a
function of frequency for UMTS-2140
application; different supply voltages; typical
values
BGA7130
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. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
18 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢋ
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢄ
/ꢚ
/ꢚ
ꢈꢅꢖ
ꢈꢅꢖ
ꢊ
ꢊ
52ꢀ07
52ꢀ07
/ꢜ
/ꢜ
//
/ꢓ
/4
//
/ꢓ
/4
5
7
5ꢓ7
5ꢖ7
5ꢖ7
5ꢓ7
5
7
ꢓ
/
ꢜ
ꢚ
ꢓ4
ꢓꢓ
ꢓ/
ꢓ
/
ꢜ
ꢚ
ꢓ4
ꢓꢓ
ꢓ/
ꢅ
ꢕ52ꢀ0ꢕ()%ꢕ*+”)7
ꢅ
ꢕ52ꢀ0ꢕ()%ꢕ*+”)7
ꢛ
ꢛ
V
SUP
= 5 V; I
CC(tot)
= 450 mA;
f = 1 MHz; matched for
UMTS-2140.
T
amb
= 25
C; I
CC(tot)
= 450 mA;
f = 1 MHz; matched for
UMTS-2140.
(1) V
SUP
= 4.75 V
(2)
SUP
= 5 V
(1) T
amb
=
40
C
(2)
amb
= +25
C
T
V
(3) T
amb
= +85
C
(3) V
SUP
= 5.25 V
Fig 32.
Third order intermodulation distortion as a
function of output power for UMTS-2140
application; different temperatures;
typical values
Fig 33.
Third order intermodulation distortion as a
function of output power for UMTS-2140
application; different supply voltages;
typical values
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢆ
ꢀꢀꢀꢁꢂꢂꢈꢉꢅꢇ
ꢖꢖ
ꢛ5
2ꢀ7
52ꢀ7
ꢖꢖ
ꢛ5
2ꢀ7
52ꢀ7
ꢅ
ꢅ
ꢅ
ꢅ
ꢖꢓ
ꢖꢓ
5
7
5ꢓ7
5ꢖ7
5ꢖ7
5ꢓ7
ꢖ
ꢖ4
ꢓ9
ꢓꢚ
ꢖ
ꢖ4
ꢓ9
ꢓꢚ
5
7
ꢓ 44
ꢓ ꢓ4
ꢓ /4
ꢓ ꢜ4
Cꢕ5ꢑꢒD7
ꢓ ꢚ4
ꢓ 44
ꢓ ꢓ4
ꢓ /4
ꢓ ꢜ4
Cꢕ5ꢑꢒD7
ꢓ ꢚ4
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
T
amb
= 25
C; I
CC(tot)
= 450 mA; matched for
UMTS-2140.
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(1) V
SUP
= 4.75 V
(2)
SUP
= 5 V
(3) V
SUP
= 5.25 V
V
(3)
T
amb
= +85
C
Fig 34.
Output power at 1 dB gain compression as a
function of frequency for UMTS-2140
application; different temperatures; typical
values
Fig 35.
Output power at 1 dB gain compression as a
function of frequency for UMTS-2140
application; different supply voltages; typical
values
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
19 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢀꢀꢀꢁꢂꢂꢈꢉꢉꢂ
ꢀꢀꢀꢁꢂꢂꢈꢉꢉꢅ
ꢚ
ꢂꢎ
52ꢀ7
ꢚ
ꢂꢎ
52ꢀ7
ꢜ
/
ꢜ
/
5ꢖ7
5ꢖ7
5ꢓ7
5ꢓ7
5
7
5
7
ꢓ
ꢓ
4
4
#9ꢙ
ꢓ#4ꢙ
ꢓ# ꢙ
ꢓ#ꢓꢙ
Cꢕ5ꢄꢒD7
ꢓ#ꢖꢙ
#9ꢙ
ꢓ#4ꢙ
ꢓ# ꢙ
ꢓ#ꢓꢙ
Cꢕ5ꢄꢒD7
ꢓ#ꢖꢙ
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
(1) T
amb
=
40
C
(2) T
amb
= +25
C
(3)
amb
= +85
C
T
amb
= 25
C; I
CC(tot)
= 450 mA; matched for
UMTS-2140.
(1) V
SUP
= 4.75 V
(2)
SUP
= 5 V
(3) V
SUP
= 5.25 V
V
T
Fig 36.
Noise figure as a function of frequency for
UMTS-2140 application; different
Fig 37.
Noise figure as a function of frequency for
UMTS-2140 application; different supply
voltages; typical values
temperatures; typical values
ꢀꢀꢀꢁꢂꢂꢈꢉꢉꢉ
ꢀꢀꢀꢁꢂꢂꢈꢉꢉꢃ
!
ꢙ
!4
ꢆ
ꢆ
!
ꢙ
!4
ꢆ
ꢆ
ꢆ
ꢆ
ꢈ52-?7
5ꢆ7
ꢆ
ꢆ
ꢈ52-?7
5ꢆ7
ꢈ5ꢌꢎꢊꢐꢍ7
50ꢆ7
ꢈ5ꢌꢎꢊꢐꢍ7
50ꢆ7
ꢙ4
ꢖ4
4
8 4
ꢙ4
ꢖ4
4
8 4
ꢖ
ꢖ
ꢕꢆ
ꢆ
ꢈ5ꢌꢎꢊꢐꢍ7
ꢈ52-?7ꢕ
ꢆ
ꢕꢆ
ꢈ5ꢌꢎꢊꢐꢍ7
ꢈ52-?7ꢕ
8
8
8ꢖ
8ꢓ
8
4
ꢓ
ꢖ
/
ꢙ
8ꢖ
8ꢓ
8
4
ꢓ
ꢖ
/
ꢙ
*ꢕ5ꢠ’7
*ꢕ5ꢠ’7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
Fig 38.
Power-on delay time; typical values
Fig 39.
Power-down delay time; typical values
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
20 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
ꢀꢀꢀꢁꢂꢂꢈꢉꢉꢊ
ꢀꢀꢀꢁꢂꢂꢈꢉꢉꢈ
4
4
ꢓꢓ
ꢓ
ꢓ
ꢕꢕꢄ
ꢔꢕꢈꢝꢛ
(
ꢕE’
E
ꢔꢕE’
E
52ꢀ7
8 4
52ꢀ7
5ꢓ7
5
7
8/
8ꢓ4
8ꢖ4
8/4
8ꢙ4
8ꢜ4
5
7
5ꢓ7
8ꢚ
8 ꢓ
8 ꢜ
#ꢚ
#9
ꢓ
ꢓ#
ꢓ#ꢓ
ꢓ#ꢖ
ꢓ#/
ꢓ#ꢙ
#ꢚ
#9
ꢓ
ꢓ#
ꢓ#ꢓ
ꢓ#ꢖ
ꢓ#/
ꢓ#ꢙ
Cꢕ5ꢄꢒD7
Cꢕ5ꢄꢒD7
V
SUP
= 5 V; I
CC(tot)
= 450 mA; pin ENABLE = LOW;
matched for UMTS-2140.
V
SUP
= 5 V; I
CC(tot)
= 450 mA; pin ENABLE = LOW;
matched for UMTS-2140.
(1) G
p
(1)
s
11
2
(2) ISL
(2)
s
22
2
Fig 40.
Isolation in power-down mode; typical values
Fig 41.
Return loss in power-down mode; typical
values
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
21 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
15. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3 x 3 x 0.85 mm
SOT908-3
X
D
B
A
E
A
A
1
c
detail X
terminal 1
index area
e
1
C
terminal 1
index area
v
C
A
B
e
b
y
y
C
1
w
1
4
L
k
E
h
8
5
D
h
0
1
2 mm
L
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
Unit
A
A
1
b
c
D
D
h
E
E
e
e
k
v
w
y
y
1
h
1
max 1.00 0.05 0.30
mm nom 0.85 0.03 0.25
0.2 3.0
2.40 3.0 1.70 0.5
1.5 0.25
0.40 0.1 0.05
0.05 0.1
min 0.80
0.00 0.20
2.9 2.35 2.9 1.65
0.20 0.35
3.1 2.45 3.1 1.75
0.30 0.45
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
sot908-3_po
References
Outline
version
European
projection
Issue date
IEC
– – –
JEDEC
JEITA
– – –
11-12-18
12-06-18
SOT908-3
MO-229
Fig 42.
Package outline SOT908-3 (HVSON8)
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
22 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
16. Soldering
ꢍꢎꢎꢏꢐꢑꢒꢓꢏꢔꢒꢓꢕꢎꢑꢖꢗꢏꢒꢎꢓꢔꢕꢎꢑꢔꢑꢘꢕꢙꢎꢚꢔꢛꢎꢙꢜꢘꢑꢒꢓꢝꢔꢎꢕꢔ !ꢇꢈ”ꢋꢔꢐꢗ#$ꢗꢝꢘ
ꢇꢈꢉꢊꢆꢋꢌꢅ
ꢄ3
ꢃ
ꢅ
ꢉ
“ꢝꢅ3
ꢝꢅ3ꢕ
ꢝꢅGꢕ
ꢝꢛG
ꢀG
ꢁG
ꢄG
ꢒG
“ꢝꢅG
ꢝꢛ3
‘+12)%ꢕ1&”2
‘+12)%ꢕ(&’*)ꢕ2)(+’-*
‘+12)%ꢕ1&”2ꢕ(1;’ꢕ’+12)%ꢕ(&’*)
+$$;(-)2ꢕ&%)&
ꢃꢈꢑꢋꢂꢝꢈꢊꢂꢝꢕ-“ꢕ00
ꢅ
ꢁG
ꢀG
ꢉ
ꢃ
ꢝꢛ3
ꢝꢛG
ꢝꢅ3
#
ꢝꢅG
4#ꢜꢙ
ꢄ3
ꢄG
ꢒG
“ꢝꢅ3
“ꢝꢅG
4#ꢙ
ꢖ#/ꢙ
ꢓ#ꢓꢙ
4#ꢜ
4#ꢓꢙ
ꢓ#/ꢙ
#ꢜꢙ
ꢖ#ꢓꢙ
ꢖ#ꢓꢙ
ꢖ#!
ꢓ84!84ꢖ
ꢓ84!8 ꢓ
ꢈ”;)ꢕ2&*)
ꢌꢍꢎꢇꢂꢆꢁꢃꢏꢐꢑ
Fig 43.
Reflow soldering footprint
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
23 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
17. Abbreviations
Table 13.
Abbreviations
Acronym
CDM
Description
Charged Device Model
CPE
Customer-Premises Equipment
ElectroStatic Discharge
ESD
E-UTRA
eUTRAN
HBM
Evolved Universal
T
e
rrestrial Radio Access
evolved UMTS
T
e
rrestrial Radio Access Network
Human Body Model
ISM
Industrial, Scientific and Medical
Long
T
e
rm Evolution
LTE
MMIC
MoCA
PAR
Monolithic Microwave Integrated Circuit
Multimedia over Coax Alliance
Peak-to-Average power Ratio
Radio Frequency IDentification
Sub-Miniature version A
RFID
SMA
UMTS
VSWR
W-CDMA
WLAN
Universal Mobile
T
e
lecommunications System
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Wireless Local Area Network
18. Revision history
Table 14.
Revision history
Document ID
Release date
20121009
Data sheet status
Change notice
Supersedes
BGA7130 v.1
Product data sheet
–
–
BGA7130
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V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
24 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
19. Legal information
19.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Suitability for use —
NXP Semiconductors products are not designed,
19.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
19.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
25 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
20. Contact information
BGA7130
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2012. All rights reserved.
Product data sheet
Rev. 1 — 9 October 2012
26 of 27
BGA7130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
21. Contents
1
2
3
4
5
6
7
General descriptio
n
. . . . . . . . . . . . . . . . . . . . . .
1
Features and benefits . . . . . . . . . . . . . . . . . . . .
1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data . . . . . . . . . . . . . . . . . . . . .
1
Design support
. . . . . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
3
Functional diagram . . . . . . . . . . . . . . . . . . . . . .
3
8
8.1
8.2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Pin description
. . . . . . . . . . . . . . . . . . . . . . . . .
4
9
9.1
9.2
Functional description
. . . . . . . . . . . . . . . . . . .
5
Supply current adjustment . . . . . . . . . . . . . . . .
5
Enable control. . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
11
12
13
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
5
Thermal characteristics
. . . . . . . . . . . . . . . . . .
6
Static characteristic
s
. . . . . . . . . . . . . . . . . . . . .
6
Dynamic characteristics . . . . . . . . . . . . . . . . . .
7
14
Application information. . . . . . . . . . . . . . . . . . .
8
Application board . . . . . . . . . . . . . . . . . . . . . . .
9
Characteristics LTE-750 . . . . . . . . . . . . . . . . .
13
Characteristics UMTS-2140 . . . . . . . . . . . . . .
17
14.1
14.2
14.3
15
16
17
18
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
22
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
23
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
2
4
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
2
4
19
Legal information. . . . . . . . . . . . . . . . . . . . . . .
25
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
25
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
5
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
2
5
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
26
19.1
19.2
19.3
19.4
20
21
Contact information. . . . . . . . . . . . . . . . . . . . .
26
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
27
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2012.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 October 2012
Document identifier: BGA7130
