NXP-Semicon-BGU8L1115
| Part # | NXP-Semicon-BGU8L1115 |
Download  | NXP-Semicon-BGU8L1115 |
BGU8L1
ꢀ
1
2
6
;
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3 — 16 January 2017
Product data sheet
1. General
description
The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE
receiver applications, available in a small plastic 6-pin extremely thin leadless package.
The BGU8L1 requires one external matching inductor.
The BGU8L1 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance. At low jamming power levels, it delivers 14 dB
gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias
current to improve sensitivity.
The BGU8L1 is optimized for 728 MHz to 960 MHz.
2. Features
and benefits
Operating frequency from 728 MHz to 960 MHz
Noise figure = 0.7 dB
Gain = 14 dB
High input 1 dB compression point of
3 dBm
High in band IP3
i
of 2 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 4.6 mA
Power-down mode current consumption < 1
A
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in a 6-pin leadless package 1.1 mm
0.7 mm
0.37 mm; 0.4 mm pitch:
SOT1232
180 GHz transit frequency – SiGe:C technology
Moisture sensitivity level 1
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
3. Applications
LNA for LTE reception in smart phones
Feature phones
T
a
blet PCs
RF front-end modules
4. Quick
reference data
Table 1.
Quick reference data
f = 882 MHz; V
CC
= 2.8 V; V
I(ENABLE)
0.8 V; T
amb
= 25 °C; input matched to 50
using a 15 nH inductor;
unless otherwise specified.
Symbol
V
CC
Parameter
Conditions
Min
1.5
2.6
12.5
–
Typ
–
Max
3.1
6.6
16.5
1.3
–
Unit
V
supply voltage
I
CC
supply current
4.6
14.5
0.7
3.0
+2.0
mA
dB
[1]
[1][2][3]
[1][3]
G
p
power gain
NF
noise figure
dB
P
i(1dB)
IP3
i
input power at 1 dB gain compression
input third-order intercept point
7.0
3.0
dBm
dBm
[1][3]
–
[1] E-UTRA
operating band 5 (869 MHz to 894 MHz).
[2] PCB
losses are subtracted.
[3] Guaranteed
by device design; not tested in production.
5. Ordering
information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BGU8L1
XSON6
plastic extremely thin small outline package; no leads; 6 terminals;
SOT1232
body 1.1
0.7
0.37 mm
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
2 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
6. Block
diagram
9
&&
ꢈ
%*8ꢁ[ꢂ
ꢁ
ꢂ
(1$%/(
5)B,1
%,$6ꢀ&21752/
ꢃ
5)B287
ꢄꢅꢆꢇ
DDDꢀꢁꢂꢂꢃꢃꢄ
Fig 1.
Block diagram
7. Pinning
information
7.1 Pinning
*1’B5)
ꢇ
ꢂ
ꢁ
ꢃ
ꢈ
ꢄ
5)B287
5)B,1
9
&&
(1$%/(
*1′
7UDQVSDUHQWꢆWRSꢆYLHZ
DDDꢀꢁꢂꢂꢅꢄꢂ
Fig 2.
Pin configuration
7.2 Pin
description
Table 3.
Pin description
Symbol
GND
Pin
Description
ground
1
2
3
4
5
6
V
CC
supply voltage
RF output
ground RF
RF input
RF_OUT
GND_RF
RF_IN
ENABLE
enable
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
3 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
8. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute maximum ratings are given as limiting
values of stress conditions during operation, that must not be exceeded under the worst probable conditions.
Symbol
V
CC
Parameter
Conditions
Min
0.5
0.5
0.5
0.5
–
Max
+5.0
+5.0
+5.0
+5.0
26
Unit
V
[1]
[1][2]
supply voltage
RF input AC coupled
V
I(ENABLE)
< V
CC
+ 0.6 V
DC; V
I(RF_IN)
< V
CC
+ 0.6 V
DC; V
I(RF_OUT)
< V
CC
+ 0.6 V
V
I(ENABLE)
V
I(RF_IN)
V
I(RF_OUT)
P
i
input voltage on pin ENABLE
input voltage on pin RF_IN
input voltage on pin RF_OUT
input power
V
[1][2]
V
[1][2][3]
[1]
V
dBm
mW
°C
°C
kV
P
tot
total power dissipation
storage temperature
junction temperature
electrostatic discharge voltage
T
sp
130 °C
–
55
T
stg
65
–
+150
150
2
T
j
V
ESD
Human Body Model (HBM)
according to ANSI/ESDA/JEDEC
standard JS-001
–
Charged Device Model (CDM)
according to JEDEC standard
JESD22-C101C
–
1
kV
[1] Stressed
with pulses of 1 s in duration. V
CC
connected to a power supply of 2.8 V with 500 mA current limit
.
[2] Warning:
Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed V
CC
+ 0.6 V or 5.0
V
.
[3] The
RF output is AC coupled through internal DC blocking capacitors.
9. Recommended
operating conditions
Table 5.
Symbol
V
CC
Operating conditions
Parameter
Conditions
Min
1.5
40
–
Typ
Max
3.1
+85
0.3
–
Unit
V
supply voltage
–
T
amb
ambient temperature
input voltage on pin ENABLE
+25
C
V
V
I(ENABLE)
OFF state
ON state
–
–
0.8
V
10. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
Conditions
Typ
Unit
thermal resistance from junction to
solder point
225
K/W
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
4 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
11. Characteristics
Table 7.
Characteristics at V
CC
= 1.8 V
728 MHz
f
960 MHz; V
CC
= 1.8 V; V
I(ENABLE)
0.8 V; T
amb
= 25
C; input matched to 50
using a 15 nH inductor;
unless otherwise specified.
Symbol Parameter
Conditions
V
I(ENABLE)
0.8 V
V
I(ENABLE)
0.3 V
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
Min
Typ
4.2
–
Max Unit
6.2 mA
1.0
A
I
CC
supply current
2.2
–
–
[1]
[2]
G
p
power gain
14.5
–
dB
12.5 14.5 16.5
dB
[3]
–
–
–
–
–
–
–
–
–
–
–
–
–
–
14.0
9.0
–
–
–
–
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
[1]
RL
in
RL
out
ISL
input return loss
output return loss
isolation
[2]
13.0
11.0
12.0
20.0
20.0
25.0
25.0
26.0
0.7
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[1][4]
[2][4][5]
[3][4]
[1]
NF
noise figure
0.7
1.3 dB
0.8
–
–
dB
P
i(1dB)
input power at 1 dB
gain compression
11.0
dBm
dBm
dBm
dBm
dBm
dBm
–
[2][5]
[3]
14.0
10.0 –
–
–
9.0
5.0
–
[1]
IP3
i
input third-order intercept point
f = 740 MHz
f = 882 MHz
–
[2][5]
[3]
8.0
3.0
–
f = 943 MHz
–
2.0
–
K
Rollett stability factor
1
–
–
–
–
–
t
on
t
off
turn-on time
turn-off time
time from V
I(ENABLE)
ON to 90 % of the gain
time from V
I(ENABLE)
OFF to 10 % of the gain
4
1
s
–
s
[1] E-UTRA
operating band 17 (734 MHz to 746 MHz).
[2] E-UTRA
operating band 5 (869 MHz to 894 MHz).
[3] E-UTRA
operating band 8 (925 MHz to 960 MHz).
[4] PCB
losses are subtracted.
[5] Guaranteed
by device design; not tested in production.
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
5 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
Table 8.
Characteristics at V
CC
= 2.8 V
728 MHz
f
960 MHz; V
CC
= 2.8 V; V
I(ENABLE)
0.8 V; T
amb
= 25
C; input matched to 50
using a 15 nH inductor;
unless otherwise specified.
Symbol Parameter
Conditions
V
I(ENABLE)
0.8 V
V
I(ENABLE)
0.3 V
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
Min Typ
Max Unit
I
CC
supply current
2.6 4.6
6.6 mA
–
–
–
1
–
A
[1]
[2]
G
p
power gain
14.5
dB
12.5 14.5
16.5 dB
[3]
–
–
–
–
–
–
–
–
–
–
–
–
–
–
14.0
9.0
–
–
–
–
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
[1]
RL
in
RL
out
ISL
input return loss
output return loss
isolation
[2]
14.0
12.0
12.0
20.0
20.0
26.0
26.0
26.0
0.7
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[1][4]
[2][4][5]
[3][4]
[1]
NF
noise figure
0.7 1.3 dB
0.8
–
–
–
–
–
–
–
–
dB
P
i(1dB)
input power at 1 dB
gain compression
5.0
dBm
dBm
dBm
dBm
dBm
dBm
–
[2][5]
[3]
7.0
3.0
–
–
3.0
[1]
IP3
i
input third-order intercept point
1.0
[2][5]
[3]
3.0 +2.0
–
2.0
K
Rollett stability factor
turn-on time
1
–
–
–
–
t
on
t
off
time from V
I(ENABLE)
ON to 90 % of the gain
time from V
I(ENABLE)
OFF to 10 % of the gain
4.0
s
1.0
s
turn-off time
–
[1] E-UTRA
operating band 17 (734 MHz to 746 MHz).
[2] E-UTRA
operating band 5 (869 MHz to 894 MHz).
[3] E-UTRA
operating band 8 (925 MHz to 960 MHz).
[4] PCB
losses are subtracted.
[5] Guaranteed
by device design; not tested in production.
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
6 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
12. Package outline
;621ꢀꢅꢆSODVWLFꢆH[WUHPHOꢆWKLQꢆVPDOOꢆRXWOLQHꢆSDFNDJHꢇꢆQRꢆOHDGVꢇꢆꢀꢆWHUPLQDOVꢇꢆERGꢆꢂꢈꢂꢆ[ꢆꢉꢈꢊꢆ[ꢆꢉꢈꢄꢊꢆPP
627ꢂꢃꢄꢃ
ꢍꢁîꢎ
H
$
(
%
‘
ꢃ
ꢇ
H
H
ꢄ
ꢄ
Y
$ %
ꢄ
ꢁ
Eꢆꢍꢁîꢎ
SLQꢆꢄ
LQGH[ꢆDUHD
SLQꢆꢄ
LQGH[ꢆDUHD
$
ꢄ
Y
$ %
/
ꢆꢍꢁîꢎ
$
&
ꢄ
&
ꢍꢇîꢎ
ꢊ
ꢄꢆPP
VFDOH
‘LPHQVLRQVꢆꢍPPꢆDUHꢆWKHꢆRULJLQDOꢆGLPHQVLRQVꢎꢆ
8QLW
$
$
‘
(
H
H
E
/
9
<
<
ꢄ
ꢄ
ꢄ
PLQ ꢊꢌꢃꢇ
ꢊꢌꢁꢂ ꢄꢌꢊꢂ
ꢊꢌꢏꢊ ꢄꢌꢄꢊ
ꢊꢌꢇ
ꢊꢌꢄꢏ ꢊꢌꢄꢏ
ꢊꢌꢇ ꢊꢌꢈꢊ
ꢊꢌꢈꢊ ꢊꢌꢄ ꢊꢌꢊꢂ ꢊꢌꢄ
ꢊꢌꢈꢂ ꢊꢌꢈꢂ
PP QRP
ꢊꢌꢃꢏ
PD[
ꢊꢌꢇꢊ ꢊꢌꢊꢇ ꢊꢌꢏꢂ ꢄꢌꢄꢂ
1RWH
ꢄꢌꢆ’LPHQVLRQꢆ$ꢆLVꢆLQFOXGLQJꢆSODWLQJꢆWKLFNQHVVꢌ
VRWꢅꢂꢆꢂBSR
5HIHUHQFHV
2XWOLQH
YHUVLRQ
(XURSHDQ
SURMHFWLRQ
,VVXHꢆGDWH
,(&
-(‘(&
-(,7$
ꢄꢃꢉꢊꢇꢉꢄꢈ
ꢄꢃꢉꢄꢄꢉꢊꢋ
627ꢄꢈꢃꢈ
Fig 3.
Package outline SOT1232 (XSON6)
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
7 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
13. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
14. Abbreviations
Table 9.
Acronym
ESD
Abbreviations
Description
ElectroStatic Discharge
Evolved UMTS
T
e
rrestrial Radio Access
Human Body Model
E-UTRA
HBM
LNA
Low-Noise Amplifier
LTE
Long
T
e
rm Evolution
MMIC
PCB
Monolithic Microwave Integrated Circuit
Printed-Circuit Board
SiGe:C
Silicon Germanium Carbon
15. Revision history
Table 10.
Revision history
Document ID
BGU8L1 v.3
Modifications:
BGU8L1 v.2
Modifications:
Release date
20170116
Data sheet status
Change notice
Supersedes
Product data sheet
–
BGU8L1 v.2
•
Section 1
: added LTE1001L according to our new naming convention
20160404
Product data sheet
–
BGU8L1 v.1
•
T
a
ble 4
: updated input power
•
T
a
ble 7
: updated
•
T
a
ble 8
: updated
BGU8L1 v.1
20140603
Product data sheet
–
–
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
8 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
16. Legal information
16.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Suitability for use —
NXP Semiconductors products are not designed,
16.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
16.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
9 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
17. Contact information
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.
V
.
2
017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
10 of 11
BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
18. Contents
1
2
3
4
5
6
General description . . . . . . . . . . . . . . . . . . . . . .
1
Features and benefits . . . . . . . . . . . . . . . . . . . .
1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Quick reference data . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Block diagram
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
7
7.1
7.2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Pin description
. . . . . . . . . . . . . . . . . . . . . . . . .
3
8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
4
Recommended operating conditions. . . . . . . .
4
Thermal characteristics. . . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
7
Handling information. . . . . . . . . . . . . . . . . . . . .
8
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
8
9
10
11
12
13
14
15
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
9
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
10
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . .
10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.
V
.
2
017.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 January 2017
Document identifier: BGU8L1
