NXP-Semicon-MC13820FCR2
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Document Number: MC13820/D
Rev. 1.1, 09/2005
Freescale Semiconductor
Technical Data
MC13820
Package Information
Plastic Package
Case 1345
MC13820
Low Noise Amplifier with Bypass
Switch
(QFN–12)
Ordering Information
Device Marking or
Device
Operating
Package
Temperature Range
MC13820
820
QFN-12
Contents:
1 Introduction
1 Introduction
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2 Electrical
Specifications .
. . . . . . . . . . . . . . .
3
3 Application
Information . . . . . . . . . . . . . . . .
10
4 Printed
Circuit Board
. . . . . . . . . . . . . . . . . .
23
5 Scattering
Parameters .
. . . . . . . . . . . . . . . .
26
6 Packaging .
. . . . . . . . . . . . . . . . . . . . . . . . . .
35
7 Product
Documentation . . . . . . . . . . . . . . . .
36
The MC13820 is a high gain LNA with extremely low
noise figure, designed for cellular, GPS and ISM band
applications. An integrated bypass switch is included to
preserve input intercept performance. The input and
output match are external to allow maximum design
flexibility. The MC13820 is fabricated using
Freescale
‘s
advanced RF BiCMOS process using the SiGe:C option
and is packaged in the QFN12 leadless package.
1.1
Features
•
RF Input Frequency: 1000 MHz to 2.4 GHz
•
•
Gain: 18 dB (typ) at 1575 MHz and 15.7 dB (typ)
at 2140 MHz
Output 3rd Order Intercept Point (OIP3): 18.5
dBm (typ) at 1575 MHz and 19.7 dBm (typ) at
2140 MHz
•
•
Noise Figure (NF): 1.25 dB (typ) at 1575 MHz
and 1.3 dB (typ) at 2140 MHz
1dB Compression Point (P1dB): -10 dBm (typ)
at 1575 MHz and -5 dBm (typ) at 2140 MHz
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its
products.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
Introduction
•
•
•
Freescale’s IP3 Boost Circuitry
Bypass Mode Included for Improved Intercept Point Performance
Total Supply Current:
2.8 mA @ 2.7 Vdc
10 µA (typ) in Bypass Mode
•
•
•
Bias Stabilized for Device and Temperature
V
a
riations
QFN-12 Leadless Package with Low Parasitics
SiGe Technology Ensures Lowest Possible Noise Figure
NC
12
NC
11
NC
10
NC
1
9
Gnd
MC13820
2
3
8
7
Gain
VCC1
Logic
LNA
Out
Enable
4
5
6
Emit
Gnd
LNA
In
Rbias
Figure 1. Simplified Block Diagram
MC13820 Technical Data, Rev. 1.1
2
Freescale Semiconductor
Electrical Specifications
2 Electrical
Specifications
Table 1. Maximum Ratings
Ratings
Symbol
Value
Unit
Supply Voltage
V
CC
T
stg
T
A
3.3
-65 to 150
-30 to 85
10
V
Storage
T
e
mperature Range
°C
Operating Ambient
T
e
mperature Range
RF Input Power
°C
P
rf
dBm
mW
C/W
C/W
Power Dissipation
P
dis
R
θ
JC
R
θ
JA
100
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient, 4 layer board
24
90
NOTES:
1. Maximum
Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD
(electrostatic discharge) immunity meets Human Body Model (HBM)
≤
200 V, Charge Device Model (CDM)
≤
450 V, and
Machine Model (MM)
≤
50 V. Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency range
Supply Voltage
f
RF
1000
2.7
2400
3
MHz
V
V
CC
2.75
Logic Voltage
V
Input High Voltage
Input Low Voltage
1.25
0
–
–
V
CC
0.8
Table 3. Electrical Characteristics
(V
CC
= 2.75
V
, T
A
= 25°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Insertion Gain
|S21|
2
dB
R1=1.2 k
Ω
, Freq=1.575 GHz
R1=1.2 k
Ω
, Freq=2.14 GHz
R1=2 k
Ω
, Freq=1.575 GHz
R1=2 k
Ω
, Freq=2.14 GHz
16
14.5
14.3
13
17.1
15.6
15.3
14.2
–
–
–
–
Maximum Stable Gain and/or Maximum Available Gain
1
R1=1.2 k
Ω
, Freq=1.575 GHz
R1=1.2 k
Ω
, Freq=2.14 GHz
R1=2 k
Ω
, Freq=1.575 GHz
R1=2 k
Ω
, Freq=2.14 GHz
MSG, MAG
NFmin
dB
dB
21.5
19.5
20.5
19.5
22.5
20.5
21.5
19.6
–
–
–
–
Minimum Noise Figure
R1=1.2 k
Ω
, Freq=1.575 GHz
R1=1.2 k
Ω
, Freq=2.14 GHz
R1=2 k
Ω
, Freq=1.575 GHz
R1=2 k
Ω
, Freq=2.14 GHz
–
–
–
–
1.01
0.96
1.01
0.96
1.1
1.05
1.1
1.05
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
3
Electrical Specifications
Table 3. Electrical Characteristics (continued)
(V
CC
= 2.75
V
, T
A
= 25°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Associated Gain at Minimum Noise Figure
R1=1.2 k
Ω
, Freq=1.575 GHz
R1=1.2 k
Ω
, Freq=2.14 GHz
R1=2 k
Ω
, Freq=1.575 GHz
Gnf
dB
21.7
19
21.7
19
22.7
19.8
22.7
19.8
–
–
–
–
R1=2 k
Ω
, Freq=2.14 GHz
1
Maximum Available Gain and Maximum Stable Gain
are defined by the K factor as follows:
S
S
21
2
21
⎛
⎞
, if K > 1,
MSG =
, if K < 1
———-
MAG =
–
——— K
±
K
–
1
⎝
⎠
S
S
12
12
Table 4. Electrical Characteristics Measured in Frequency Specific
T
u
ned Circuits
(V
CC
= 2.75
V
, T
A
= 25°C, Rbias = 2 k
Ω
, unless otherwise noted.)
Characteristic
1575 MHz (Refer to
Figure 9
)
Symbol
Min
Typ
Max
Unit
Frequency
f
–
17.5
–
1575
18
–
–
MHz
dB
Active Gain
G
Active Noise Figure
NF
IIP3
P
1dB
I
CC
G
1.25
0.5
-10
2.8
-5.0
4.8
27
1.4
–
dB
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
-1.0
-11
–
dBm
dBm
mA
dB
–
3.3
–
-6.0
–
Bypass Noise Figure
NF
IIP3
5.2
–
dB
Bypass Input Third Order Intercept Point
Bypass Current
26
–
dBm
µA
10
20
1960 MHz (Refer to
Figure 10
)
Frequency
f
–
16
–
1960
16.4
1.25
1
–
–
MHz
dB
Active Gain
G
Active Noise Figure
NF
IIP3
P
1dB
I
CC
G
1.4
–
dB
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
0
dBm
dBm
mA
dB
-7.0
–
-6
–
2.8
-4
3.3
–
-5.0
–
Bypass Noise Figure
NF
IIP3
4.7
25
5.1
–
dB
Bypass Input Third Order Intercept Point
Bypass Current
23
–
dBm
µA
10
20
MC13820 Technical Data, Rev. 1.1
4
Freescale Semiconductor
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(V
CC
= 2.75
V
, T
A
= 25°C, Rbias = 2 k
Ω
, unless otherwise noted.)
Characteristic
2140 MHz (Refer to
Figure 11
)
Symbol
Min
Typ
Max
Unit
Frequency
f
–
15.3
–
2140
15.7
1.3
–
–
MHz
dB
Active Gain
G
Active Noise Figure
NF
IIP3
P
1dB
I
CC
G
1.4
–
dB
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
2.5
-6.0
–
3.5
dBm
dBm
mA
dB
-5
–
2.8
3.2
–
-4.2
–
-3.2
3.2
Bypass Noise Figure
NF
IIP3
3.6
–
dB
Bypass Input Third Order Intercept Point
Bypass Current
22.5
–
24.5
10
dBm
µA
20
2400 MHz (Refer to
Figure 12
)
Frequency
f
–
13.8
–
2400
14
–
–
MHz
dB
Active Gain
G
Active Noise Figure
NF
IIP3
P
1dB
I
CC
G
1.49
4.0
-4.0
2.8
-4.0
4.2
24
1.6
–
dB
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
3.5
-5.0
–
dBm
dBm
mA
dB
–
3.2
–
-5.0
–
Bypass Noise Figure
NF
IIP3
4.7
–
dB
Bypass Input Third Order Intercept Point
Bypass Current
22
–
dBm
µA
10
20
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
5
Electrical Specifications
Table 5. Truth Table
Enable
Disable
Pin Function
Pin Name
Low Gain
High Gain
Low Gain
High Gain
Circuit Bias VCC1
VCC1
GAIN
1
0
1
1
1
0
1
1
T
o
ggles Gain Mode (Active or
Bypass)
T
o
ggles LNA On/Off
LNA Bias VCC3
ENABLE
LNA Out
1
1
1
1
0
1
0
1
NOTES: 1. Logic
state “1” equals V
voltage. Logic
state of “0” equals ground potential.
CC
2. VCC3
is inductively coupled to LNA OUT pin
3. Minimum
logic state “1” for enable and gain pins is 1.25 V.
4. Maximum
logic state “0” for enable and gain pins is 0.8 V.
Maximum Stable/Available
G
a
in and
For
w
ard Insertion
G
a
in vs.
F
r
equency
Rbias is 2 kohm
30
25
M
S
G
20
15
|S21|
2
MAG
10
5
0
0.5
1.5
2.5
3.5
4.5
5.5
f,
F
r
equency (G
H
z
)
Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency
(Rbias = 2 k
Ω)
MC13820 Technical Data, Rev. 1.1
6
Freescale Semiconductor
Electrical Specifications
M
a
xi
m
um
S
table/Available Gain and
F
o
r
w
a
rd Insertion Gain vs. Frequency
R
b
ias is 1.2 kohm
35
30
25
20
15
10
5
M
S
G
MAG
|S21|
2
0
0.5
1.5
2.5
3.5
4.5
f, Frequency (G
H
z
)
Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency
(Rbias = 1.2 k
Ω)
Maximum Stable/Available
G
a
in and
For
w
ard Insertion
G
a
in vs. Icc
24
23
M
S
G/
M
AG 1.575 GHz
22
M
S
G/
M
AG 1.96 G
H
z
21
20
M
S
G/
M
AG 2.14 G
H
z
19
18
17
S|21|
2
1.575 GHz
S|21|
2
1.96 GHz
16
15
S|21|
2
2.14 GHz
14
2.5
3
3.5
4
4.5
5
5.5
Icc (
m
A
)
Figure 4. Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
7
Electrical Specifications
Mini
m
u
m
N
o
ise
F
igure and Associated Gain vs. Frequency
R
b
ias = 2 kohm
1.2
30
25
20
15
10
5
1.15
1.1
Gnf
1.05
1
NFm in
0.95
0.9
0.85
0
1000
1200
1400
1600
1800
2000
2200
2400
f,
F
r
equency (M
H
z
)
Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency
(Rbias = 2 k
Ω)
Minimum
N
o
ise
F
igure and Associated Gain vs. Frequency
R
b
ias = 1.2 kohm
1.12
1.1
30
25
20
15
10
5
Gnf
1.08
1.06
1.04
1.02
1
NFm in
0.98
0
1000
1200
1400
1600
1800
2000
2200
2400
f,
F
r
equency (M
H
z
)
Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency
(Rbias = 1.2 k
Ω)
MC13820 Technical Data, Rev. 1.1
8
Freescale Semiconductor
Electrical Specifications
Input 3rd Order Intercept Point vs. Icc
1960 MHz Application Ckt.
6
4
2
0
-2
-4
-6
1.5
2.5
3.5
4.5
5.5
Icc (m
A
)
Figure 7. Input 3rd Order Intercept Point vs. Icc for the 1960 MHz Application Circuit
(Rbias varied from 1.2 k
Ω
to 3 k
Ω
)
Input 3rd Order Intercept Point vs. Icc
2140 MHz Application Circuit
6
5
4
3
2
1
0
-1
-2
1
2
3
4
5
Icc (m
A
)
Figure 8. Input 3rd Order Intercept Point vs. Icc for the 2140 MHz Application Circuit
(Rbias varied from 1.2 k
Ω
to 3 k
Ω
)
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
9
Application Information
3 Application
Information
The MC13820 SiGe:C LNA is designed for applications in the 1000 MHz to 2.4 GHz range. It has three
different modes: High Gain, Low Gain (Bypass) and Disabled. The IC is programmable through the Gain
and Enable pins. The logic truth table is given in
Table 5
.
In these application examples a balance is made between the competing RF performance characteristics of
I
, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the
CC
input or output. Instead, matching which achieves a trade-off in RF performance qualities is utilized. For
a particular application or spec requirement, the matching can be changed to achieve enhanced
performance of one parameter at the expense of other parameters.
Application information for 1575, 1960, 2140 and 2400 MHz are shown. For each application, two current
drain examples are provided. Typical RF performance is shown for two values of bias resistor R1: 1.2 k
Ω
and 2 k
Ω
, see
Table 6
,
Table 7
,
Table 8
, and
Table 9
. These two current drain states offer variation in
intercept point, gain, and noise figure. Measurements are made at a bias of V
= 2.75
V
.
F
req. spacing
CC
for IP3 measurements is 200 kHz. Non-linear measurements are made at Pin = -30 dB. The board loss
corrections for these boards are: Input 0.16 dB, Output 0.2 dB. Gain and NF results incorporate these
corrections in order to better reflect the actual performance of the device.
3.1
1575 MHz Application
This application circuit was designed to provide NF < 1.2 dB, S21 gain > 18 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 1575 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V V
is listed in
Table 6
.
CC
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
I
.
V
a
lues of external resistors R1 and R2 are varied to adjust I
and IP3.
CC
CC
MC13820 Technical Data, Rev. 1.1
10
Freescale Semiconductor
Application Information
NC
NC
NC
12
11
10
MC13820
1575 MHz LNA
NC
1
2
3
9
8
7
Gnd
C5
.01uf
C6
33 pf
Gain
Vcc1
Logic
C2
1 pf
LNA
OUT
Enable
L2
5.6 nH
R2
680
C3
33 pf
4
5
6
C4
.01uf
R1
2 k
L1
5.6 nH
LNA IN
Vcc3
C1
22pF
Rbias
Figure 9. 1575 MHz LNA Application Schematic
Table 6. Typical 1575 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
R1 = 1.2 k
Ω
, R2 = 620
Ω
Symbol
Min
Typ
Max
Unit
Frequency
f
–
1575.42
–
MHz
dB
Power Gain
High Gain
Bypass
G
–
–
18
-4.7
–
–
Output Third Order Intercept Point
OIP3
IIP3
dBm
dBm
dBm
dBm
High Gain
Bypass
–
–
20
20.8
–
–
Input Third Order Intercept Point
High Gain
Bypass
–
–
2.0
25.5
–
–
Out Ref P1dB
High Gain
Bypass
P
1dBout
–
–
10
–
–
–
In Ref P1dB
High Gain
Bypass
P
1dBin
–
–
-8.0
–
–
–
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
11
Application Information
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Insertion Gain
High Gain
Bypass
G
dBm
–
–
18.5
-3.4
–
–
Noise Figure
High Gain
Bypass
NF
I
CC
dB
–
–
1.25
4.8
–
–
Current Drain
High Gain
Bypass
–
–
4.45
4.0
–
–
mA
µA
Rbias R1 Value
–
–
1.2
–
–
k
Ω
Ω
Rstability R2 Value
620
Input Return Loss
High Gain
S11
S21
S12
S22
dB
–
–
-15.5
-8.1
–
–
Bypass
Gain
dB
dB
dB
High Gain
Bypass
–
–
18.2
-4.1
–
–
Reverse Isolation
High Gain
–
–
-23.7
-4.4
–
–
Bypass
Output Return Loss
High Gain
–
–
-13.9
-6.8
–
–
Bypass
R1= 2.0 k
Ω
, R2 = 680
Ω
Frequency
f
–
1575.42
–
MHz
dB
Power Gain
High Gain
Bypass
G
–
–
18
-5.0
–
–
Output Third Order Intercept Point
OIP3
IIP3
dBm
dBm
dBm
dBm
High Gain
Bypass
–
–
18.7
21.7
–
–
Input Third Order Intercept Point
High Gain
Bypass
–
–
0.5
27
–
–
Out Ref P1dB
High Gain
Bypass
P
1dBout
–
–
8.2
–
–
–
In Ref P1dB
High Gain
Bypass
P
1dBin
–
–
-10
–
–
–
MC13820 Technical Data, Rev. 1.1
12
Freescale Semiconductor
Application Information
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Insertion Gain
High Gain
Bypass
G
dBm
–
–
18.1
-3.6
–
–
Noise Figure
High Gain
Bypass
NF
I
CC
dB
–
–
1.25
4.8
–
–
Current Drain
High Gain
Bypass
–
–
2.8
4.0
–
–
mA
µA
Rbias R1 Value
–
–
2.0
–
–
k
Ω
Ω
Rstability R2 Value
680
Input Return Loss
High Gain
S11
S21
S12
S22
dB
–
–
-13.5
-9.0
–
–
Bypass
Gain
dB
dB
dB
High Gain
Bypass
–
–
17.9
-4.1
–
–
Reverse Isolation
High Gain
–
–
-22.9
-4.3
–
–
Bypass
Output Return Loss
High Gain
–
–
-10.8
-7.2
–
–
Bypass
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
13
Application Information
3.2
1960 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 17 dBm with
S11 better than -10 dB and S22 better than -10 dB at 1960 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V V
is listed in
Table 7
.
CC
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
I
.
V
a
lues of external resistors R1 and R2 are varied to adjust I
and IP3.
CC
CC
NC
NC
NC
12
11
10
MC13820
1960 MHz LNA
NC
1
2
3
9
8
7
Gnd
C5
.01uf
C6
33 pf
Gain
Vcc1
Logic
C2
0.9pf
LNA
OUT
Enable
R2
3.3 k
L2
2.7 nH
C3
33 pf
4
5
6
C4
.01uf
R1
2 k
L1
4.3 nH
LNA IN
Vcc3
C1
33pF
Rbias
Figure 10. 1960 MHz LNA Application Schematic
Table 7. Typical 1960 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
R1 = 1.2 k
Ω
, R2 = 3.3 k
Ω
Frequency
f
–
1960
–
MHz
dB
Power Gain
High Gain
Bypass
G
–
–
16
-4.5
–
–
Output Third Order Intercept Point
OIP3
IIP3
dBm
dBm
High Gain
Bypass
–
–
22
20.5
–
–
Input Third Order Intercept Point
High Gain
Bypass
–
–
5.5
25
–
–
MC13820 Technical Data, Rev. 1.1
14
Freescale Semiconductor
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Out Ref P1dB
High Gain
Bypass
P
1dBout
dBm
–
–
10.5
–
–
–
In Ref P1dB
High Gain
Bypass
P
1dBin
dBm
dBm
dB
–
–
-6.0
–
–
–
Insertion Gain
High Gain
Bypass
G
–
–
16.8
-3.7
–
–
Noise Figure
High Gain
Bypass
NF
–
–
1.26
2.5
–
–
Current Drain
High Gain
Bypass
I
CC
–
–
4.45
10
–
–
mA
µA
Rbias R1 Value
–
–
1.2
3.3
–
–
k
Ω
k
Ω
dB
Rstability R2 Value
Input Return Loss
High Gain
S11
S21
S12
S22
–
–
-9.7
-8.7
–
–
Bypass
Gain
dB
dB
dB
High Gain
Bypass
–
–
16.6
-3.8
–
–
Reverse Isolation
High Gain
–
–
-21.7
-4.2
–
–
Bypass
Output Return Loss
High Gain
–
–
-14.6
-6.3
–
–
Bypass
R1 = 2.0 k
Ω
, R2 = 3.3 k
Ω
Frequency
f
–
1960
–
MHz
dB
Power Gain
High Gain
Bypass
G
–
–
16.4
-4.0
–
–
Output Third Order Intercept Point
OIP3
IIP3
dBm
dBm
High Gain
Bypass
–
–
17.4
21
–
–
Input Third Order Intercept Point
High Gain
Bypass
–
–
1.0
25
–
–
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
15
Application Information
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Out Ref P1dB
High Gain
Bypass
P
1dBout
dBm
–
–
10.4
–
–
–
In Ref P1dB
High Gain
Bypass
P
1dBin
dBm
dBm
dB
–
–
-6.0
–
–
–
Insertion Gain
High Gain
Bypass
G
–
–
16.5
-3.7
–
–
Noise Figure
High Gain
Bypass
NF
–
–
1.25
4.7
–
–
Current Drain
High Gain
Bypass
I
CC
–
–
2.8
4.0
–
–
mA
µA
Rbias R1 Value
–
–
2.0
3.3
–
–
k
Ω
k
Ω
dB
Rstability R2 Value
Input Return Loss
High Gain
S11
S21
S12
S22
–
–
-9.2
-9.8
–
–
Bypass
Gain
dB
dB
dB
High Gain
Bypass
–
–
16.6
-3.9
–
–
Reverse Isolation
High Gain
–
–
-21.1
-4.0
–
–
Bypass
Output Return Loss
High Gain
–
–
-25
-7.8
–
–
Bypass
MC13820 Technical Data, Rev. 1.1
16
Freescale Semiconductor
Application Information
3.3
2140 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V V
is listed in
Table 8
.
CC
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
I
.
V
a
lues of external resistors R1 and R2 are varied to adjust I
and IP3.
CC
CC
NC
NC
NC
12
11
10
MC13820
2140 MHz LNA
NC
1
2
3
9
8
7
Gnd
C5
.01uf
C6
33 pf
Gain
Vcc1
Logic
C2
0.9pf
LNA
OUT
Enable
R2
3.3 k
L2
2.7 nH
C3
33 pf
4
5
6
C4
.01uf
R1
2 k
L1
4.3 nH
LNA IN
Vcc3
C1
33pF
Rbias
Figure 11. 2140 MHz LNA Application Schematic
Table 8. Typical 2140 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
R1 = 1.2 k
Ω
, R2 = 3.3 k
Ω
Frequency
f
–
2140
–
MHz
dB
Power Gain
High Gain
Bypass
G
–
–
15.7
-3.4
–
–
Output Third Order Intercept Point
OIP3
IIP3
dBm
dBm
High Gain
Bypass
–
–
20.7
16.4
–
–
Input Third Order Intercept Point
High Gain
Bypass
–
–
5.0
20
–
–
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
17
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Out Ref P1dB
High Gain
Bypass
P
1dBout
dBm
–
–
10.7
–
–
–
In Ref P1dB
High Gain
Bypass
P
1dBin
dBm
dBm
dB
–
–
-5.0
–
–
–
Insertion Gain
High Gain
Bypass
G
–
–
14.8
-3.4
–
–
Noise Figure
High Gain
Bypass
NF
–
–
1.49
3.4
–
–
Current Drain
High Gain
Bypass
I
CC
–
–
4.45
10
–
–
mA
µA
Rbias R1 Value
–
–
1.2
3.3
–
–
k
Ω
k
Ω
dB
Rstability R2 Value
Input Return Loss
High Gain
S11
S21
S12
S22
–
–
-8.5
-8.9
–
–
Bypass
Gain
dB
dB
dB
High Gain
Bypass
–
–
16.5
-4.1
–
–
Reverse Isolation
High Gain
–
–
-22.2
-4.5
–
–
Bypass
Output Return Loss
High Gain
–
–
-12.5
-6.1
–
–
Bypass
R1 = 2.0 k
Ω
, R2 = 3.3 k
Ω
Frequency
f
–
2140
–
MHz
dB
Power Gain
High Gain
Bypass
G
–
–
15.7
-3.2
–
–
Output Third Order Intercept Point
OIP3
IIP3
dBm
dBm
High Gain
Bypass
–
–
19.7
21.3
–
–
Input Third Order Intercept Point
High Gain
Bypass
–
–
3.5
24.5
–
–
MC13820 Technical Data, Rev. 1.1
18
Freescale Semiconductor
Application Information
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Out Ref P1dB
High Gain
Bypass
P
1dBout
dBm
–
–
10.7
–
–
–
In Ref P1dB
High Gain
Bypass
P
1dBin
dBm
dBm
dB
–
–
-5.0
–
–
–
Insertion Gain
High Gain
Bypass
G
–
–
14.8
-3.5
–
–
Noise Figure
High Gain
Bypass
NF
–
–
1.3
3.2
–
–
Current Drain
High Gain
Bypass
I
CC
–
–
2.8
10
–
–
mA
µA
Rbias R1 Value
–
–
2.0
3.3
–
–
k
Ω
k
Ω
dB
Rstability R2 Value
Input Return Loss
High Gain
S11
S21
S12
S22
–
–
-13.7
-17.1
–
–
Bypass
Gain
dB
dB
dB
High Gain
Bypass
–
–
15.5
-3.0
–
–
Reverse Isolation
High Gain
–
–
-20.9
-3.3
–
–
Bypass
Output Return Loss
High Gain
–
–
-12.1
-14.6
–
–
Bypass
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
19
Application Information
3.4
2400 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V V
is listed in
Table 9
.
CC
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
I
.
V
a
lues of external resistors R1 and R2 are varied to adjust I
and IP3.
CC
CC
NC
NC
NC
12
11
10
MC13820
2400 MHz LNA
NC
1
2
3
9
8
7
Gnd
C5
.01uf
C6
33 pf
Gain
Vcc1
Logic
C2
0.6pf
LNA
OUT
Enable
R2
3.3 k
L2
2.4 nH
C3
33 pf
4
5
6
C4
.01uf
R1
2 k
L1
2.7 nH
LNA IN
Vcc3
C1
33pF
Rbias
Figure 12. 2400 MHz LNA Application Schematic
Table 9. Typical 2400 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
R1 = 1.2 k
Ω
, R2 = 3.3 k
Ω
Frequency
f
–
2400
–
MHz
dB
Power Gain
High Gain
Bypass
G
–
–
14
-3.8
–
–
Output Third Order Intercept Point
OIP3
IIP3
dBm
dBm
High Gain
Bypass
–
–
21
19
–
–
Input Third Order Intercept Point
High Gain
Bypass
–
–
7.0
22
–
–
MC13820 Technical Data, Rev. 1.1
20
Freescale Semiconductor
Application Information
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Out Ref P1dB
High Gain
Bypass
P
1dBout
dBm
–
–
10.7
–
–
–
In Ref P1dB
High Gain
Bypass
P
1dBin
dBm
dBm
dB
–
–
-4.0
–
–
–
Insertion Gain
High Gain
Bypass
G
–
–
14
-3.8
–
–
Noise Figure
High Gain
Bypass
NF
–
–
1.55
3.8
–
–
Current Drain
High Gain
Bypass
I
CC
–
–
4.45
10
–
–
mA
µA
Rbias R1 Value
–
–
1.2
3.3
–
–
k
Ω
k
Ω
dB
Rstability R2 Value
Input Return Loss
High Gain
S11
S21
S12
S22
–
–
-8.5
-8.9
–
–
Bypass
Gain
dB
dB
dB
High Gain
Bypass
–
–
14.5
-4.1
–
–
Reverse Isolation
High Gain
–
–
-20.2
-4.0
–
–
Bypass
Output Return Loss
High Gain
–
–
-11
-7.0
–
–
Bypass
R1 = 2.0 k
Ω
, R2 = 3.3 k
Ω
Frequency
f
–
2400
–
MHz
dB
Power Gain
High Gain
Bypass
G
–
–
14
-3.6
–
–
Output Third Order Intercept Point
OIP3
IIP3
dBm
dBm
High Gain
Bypass
–
–
18.5
20
–
–
Input Third Order Intercept Point
High Gain
Bypass
–
–
4.0
24
–
–
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
21
Application Information
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different I
CC
and IP3 requirements.)
Characteristic
Symbol
Min
Typ
Max
Unit
Out Ref P1dB
High Gain
Bypass
P
1dBout
dBm
–
–
10
–
–
–
In Ref P1dB
High Gain
Bypass
P
1dBin
dBm
dBm
dB
–
–
-4.0
–
–
–
Insertion Gain
High Gain
Bypass
G
–
–
14
-4.0
–
–
Noise Figure
High Gain
Bypass
NF
–
–
1.49
4.2
–
–
Current Drain
High Gain
Bypass
I
CC
–
–
2.8
10
–
–
mA
µA
Rbias R1 Value
–
–
2.0
3.3
–
–
k
Ω
k
Ω
dB
Rstability R2 Value
Input Return Loss
High Gain
S11
S21
S12
S22
–
–
–
–
-10
-9.7
Bypass
Gain
–
–
–
–
dB
dB
dB
High Gain
Bypass
14
-3.6
Reverse Isolation
High Gain
–
–
–
–
-20
-3.8
Bypass
Output Return Loss
High Gain
–
–
–
–
-10
Bypass
-9.1
MC13820 Technical Data, Rev. 1.1
22
Freescale Semiconductor
Printed Circuit Board
4 Printed
Circuit Board
Q1
L2
R2
C2
L1
R1
C3
C4
C1
MB
C
1
3
720/21
V2R1
NO
T
E:
C
OMP
O
N
E
N
T
S C5 AND C6 ARE LOCATED ON THE BACK OF THE BOARD
Figure 13. Front Side
C5 C6
Figure 14. Back Side
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
23
Printed Circuit Board
Component
Table 10. Bill of Materials
Value
Case
Manufacturer
Comments
1575 MHz
C1
22 pF
1.0 pF
402
402
Murata
T
a
iyo
Y
u
den
Murata
Input match
Output match
RF bypass
C2
C3
33 pF
402
C4
.01 µF
402
Murata
Low freq bypass
Low freq bypass
RF bypass
C5
.01 µF
402
Murata
C6
33 pF
402
Murata
L2
5.6 nH
5.6 nH
1.2 or 2 k
Ω
680
Ω
1005
1005
402
CoilCraft
CoilCraft
KOA
Output match
Input match
L1
R1
Bias for 4.45 or 2.8 mA
Stability
R2
402
KOA
Q1
MC13820
QFN-12
Freescale
1960 MHz
C1
33 pF
0.9 pF
402
402
Murata
T
a
iyo
Y
u
den
Murata
Input match
Output match
RF bypass
C2
C3
33 pF
402
C4
.01 µF
402
Murata
Low freq bypass
Low freq bypass
RF bypass
C5
.01 µF
402
Murata
C6
33 pF
402
Murata
L1
4.3 nH
2.7 nH
1.2 or 2 k
Ω
3.3 k
Ω
MC13820
1005
1005
402
CoilCraft
Coilcraft
KOA
Input match
L2
Output match
Bias for 4.45 or 2.8 mA
Stability
R1
R2
402
KOA
Q1
QFN-12
Freescale
2140 MHz
C1
33 pF
0.9 pF
33 pF
.01 µF
.01 µF
33 pF
4.3 nH
2.7 nH
402
402
Murata
T
a
iyo
Y
u
den
Murata
Input match
Output match
RF bypass
C2
C3
402
C4
402
Murata
Low freq bypass
Low freq bypass
RF bypass
C5
402
Murata
C6
402
Murata
L1
1005
1005
CoilCraft
CoilCraft
Input match
L2
Output match
MC13820 Technical Data, Rev. 1.1
24
Freescale Semiconductor
Printed Circuit Board
Comments
Table 10. Bill of Materials (continued)
Component
Value
Case
Manufacturer
R2
R1
3.3 k
Ω
402
402
KOA
KOA
Stability
1.2 or 2 k
Ω
MC13820
Bias for 4.45 or 2.8 mA
Q1
QFN-12
Freescale
2400 MHz
C1
33 pF
0.6 pF
402
402
Murata
T
a
iyo
Y
u
den
Murata
Input match
Output match
RF bypass
C2
C3
33 pF
402
C4
.01 µF
402
Murata
Low freq bypass
Low freq bypass
RF bypass
C5
.01 µF
402
Murata
C6
33 pF
402
Murata
L1
2.7 nH
2.4 nH
1.2 or 2 k
Ω
3.3 k
Ω
MC13820
1005
1005
402
CoilCraft
CoilCraft
KOA
Input match
L2
Output match
Bias for 4.45 or 2.8 mA
Stability
R2
R1
402
KOA
Q1
QFN-12
Freescale
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
25
Scattering Parameters
5 Scattering
Parameters
Table 11. Active Mode Scattering Parameters
(V
CC
and V
CC3
= 2.75
V
,
B
and grounded, Gain = 2.75
V
,
E
nable = 2.75
V
,
R
bias resistor R1 = 2 k
Ω
), I
CC
= 2.6 mA
1
S
11
S
21
S
12
S
22
f
GHz)
|S
11
|
∠ φ
|S
11
|
∠ φ
|S
11
|
∠ φ
|S
11
|
∠ φ
0.7
0.8
0.9
1
0.852
0.836
0.803
0.814
0.782
0.772
0.752
0.718
0.672
0.688
0.695
0.686
0.653
0.661
0.646
0.639
0.628
0.608
0.61
-29.22
-32.9
7.029
7.279
7.034
6.856
6.687
6.29
142.03
137.43
133.48
127
0.021
0.024
0.027
0.029
0.031
0.034
0.036
0.039
0.04
75.16
73.13
70.95
66.71
68.53
65.83
65.66
64.76
61.29
61.9
0.956
0.946
0.966
0.887
0.924
0.898
0.897
0.912
0.943
0.882
0.865
0.866
0.892
0.863
0.844
0.818
0.8
-14.42
-15.76
-19.49
-17.77
-22.03
-23.58
-25.56
-26.44
-30.51
-35.18
-35.67
-36.55
-41.25
-42.78
-46.94
-49.01
-50.61
-51.67
-52.93
-54.38
-57.38
-63.02
-62.94
-64.16
-63.26
-63.69
-66.71
-70.44
-74.6
-36.02
-42.84
-42.6
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
125.21
122.03
116.95
114.12
112.14
107.49
104.8
101.62
97.81
95.37
90.65
86.29
86.75
82.12
79.31
77.33
75.4
-45.55
-47.28
-50.24
-52.29
-49.98
-53.95
-54.86
-57.19
-57.81
-60.4
6.242
6.082
5.696
5.662
5.499
5.348
5.334
5.098
5.035
4.766
4.575
4.529
4.366
4.251
4.307
4.168
3.933
3.819
3.665
3.572
3.523
3.495
3.484
0.043
0.044
0.047
0.05
60.95
60.42
59.47
60.14
56
0.052
0.058
0.058
0.059
0.06
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
-62.48
-61.9
52.65
51.95
52.38
53.62
51.2
-63.13
-63.96
-65.96
-69.48
-74.63
-75.03
-75.6
0.78
0.063
0.067
0.072
0.073
0.075
0.074
0.074
0.07
0.779
0.777
0.811
0.756
0.716
0.697
0.683
0.702
0.716
0.714
0.699
0.609
0.637
0.57
50.86
46.36
42.72
42.14
39.24
39.17
43.49
46.63
45.9
68.94
65.73
62.83
61.56
60.5
0.536
0.515
0.506
0.489
0.483
0.487
0.488
3.1
3.2
3.3
3.4
3.5
-75.28
-73.7
-74.54
-76.91
-78.25
58.09
55.25
51.93
0.07
0.075
0.082
MC13820 Technical Data, Rev. 1.1
26
Freescale Semiconductor
Scattering Parameters
Table 12. Bypass Mode Scattering Parameters
((V
CC1
and V
CC3
= 2.75
V
,
B
and and Gain grounded, Enable = 2.75
V
,
R
bias resistor R1= 2 k
Ω
), I
CC
= 3.0 µA)
S
11
S
21
S
12
S
22
f
(GHz)
|S
11
|
∠ φ
|S
11
|
∠ φ
|S
11
|
∠ φ
|S
11
|
∠ φ
0.7
0.8
0.9
1
0.549
0.511
0.47
-51.13
-53.94
-55.73
-59.65
-58.46
-59.33
-59.6
0.578
0.596
0.608
0.615
0.624
0.629
0.634
0.633
0.638
0.638
0.639
0.64
17.83
13.17
8.45
0.583
0.6
18.83
14.15
10.08
5.12
0.578
0.542
0.524
0.455
0.453
0.42
-41.21
-42.25
-45.13
-43.82
-46.74
-48.02
-48.56
-47.62
-49.7
0.614
0.617
0.628
0.635
0.639
0.639
0.641
0.643
0.643
0.645
0.649
0.643
0.643
0.645
0.644
0.642
0.638
0.633
0.645
0.643
0.629
0.621
0.619
0.622
0.623
0.615
0.607
0.458
0.434
0.421
0.404
0.384
0.36
3.3
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
1.11
2.52
-2.37
-0.96
-5.19
-3.8
0.407
0.394
0.388
0.374
0.353
0.335
0.348
0.327
0.342
0.324
0.309
0.294
0.279
0.274
0.297
0.282
0.245
0.23
-61.06
-62.48
-59.49
-60.21
-60.18
-63.26
-63.18
-66.36
-65.87
-63.97
-63.46
-63.28
-63.96
-65.66
-73.59
-74.61
-74.6
-8.02
-6.66
-10.97
-13.09
-15.43
-17.77
-20.27
-22.63
-24.42
-26.93
-28.95
-31.11
-33.88
-35.14
-36.78
-40.56
-42.77
-44.14
-45.7
-9.5
0.362
0.367
0.363
0.35
-11.89
-14.26
-16.58
-19.08
-21.39
-23.2
-53.61
-53.66
-53.3
0.645
0.639
0.64
-53.86
-54.83
-57.82
-60.95
-63.15
-64.43
-64.25
-62.49
-62.47
-72.82
-73.08
-70.36
-67.03
-68.8
0.355
0.335
0.332
0.322
0.32
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
0.64
-25.56
-27.79
-30.01
-32.07
-33.64
-35.11
-38.92
-41.1
0.64
0.639
0.632
0.627
0.64
0.319
0.323
0.354
0.317
0.296
0.284
0.283
0.274
0.269
0.265
0.261
0.637
0.622
0.616
0.616
0.618
0.618
0.609
0.603
-42.65
-43.94
-45.84
-48.62
-51.03
-52.96
3.1
3.2
3.3
3.4
3.5
-72.89
-72.04
-74.74
-77.34
-76.71
0.236
0.245
0.238
0.212
0.194
-47.38
-50.21
-52.62
-54.36
-75.51
-77.5
-77.94
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
27
Scattering Parameters
Table 13. Active Mode Scattering Parameters
(V
CC1
and V
CC3
= 2.75
V
,
B
and grounded, Gain and Enable = 2.75
V
,
R
bias resistor R1 = 1.2 k
Ω
, I
CC
= 4.8 mA)
S
11
S
21
S
12
S
22
f
(GHz)
|S
11
|
∠ φ
|S
11
|
∠ φ
|S
11
|
∠ φ
|S
11
|
∠ φ
0.7
0.8
0.9
1
0.784
0.765
0.721
0.724
0.692
0.678
0.662
0.626
0.576
0.594
0.599
0.594
0.56
-32.04
-35.9
10.275
10.162
9.646
9.184
8.773
8.23
132.74
127.59
122.89
116.28
114.36
110.64
106.21
103.36
100.91
96.71
93.81
90.92
87.3
0.021
0.022
0.025
0.027
0.029
0.033
0.034
0.037
0.039
0.041
0.042
0.044
0.049
0.05
72.91
71.83
68.97
67.34
67.52
67.56
66.62
64.27
63.47
62.78
62.14
62.34
60.88
60.42
57.9
0.92
-15.77
-16.82
-20.31
-18.21
-22.39
-23.69
-25.47
-25.98
-29.67
-34.46
-34.49
-35.3
0.907
0.923
0.842
0.877
0.846
0.845
0.858
0.893
0.835
0.816
0.817
0.843
0.817
0.798
0.774
0.761
0.742
0.741
0.743
0.768
0.715
0.68
-39
-45.16
-44.87
-47.17
-48.64
-51.75
-53.11
-49.59
-52.85
-54.14
-56.18
-57.13
-58.62
-59.79
-59.25
-59.9
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
7.98
7.638
7.185
6.972
6.691
6.444
6.34
-39.86
-41.18
-45.47
-46.98
-48.63
-49.56
-50.7
0.568
0.548
0.546
0.543
0.532
0.527
0.529
0.551
0.485
0.454
0.434
0.433
0.436
0.437
0.437
0.433
6.029
5.885
5.568
5.318
5.189
4.979
4.816
4.839
4.649
4.382
4.207
4.048
3.936
3.847
3.81
85.12
80.96
76.96
76.8
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
0.054
0.056
0.057
0.059
0.062
0.064
0.072
0.072
0.074
0.072
0.068
0.069
0.072
0.078
0.082
56.61
54.83
54.79
53.59
53.44
52.3
72.95
70.13
68.35
66.22
60.62
57.65
55.39
54.44
52.8
-61.63
-62.78
-67.21
-70.76
-71.28
-70.94
-67.82
-66.18
-68.3
-52
-55.57
-60.12
-60.09
-60.36
-60.12
-61.04
-63.24
-66.49
-70.55
47.22
44.14
42.21
41.81
43.96
47.68
46.81
45.71
0.666
0.669
0.674
0.684
0.687
0.676
3.1
3.2
3.3
3.4
3.5
50.72
48.36
45.48
-72.51
-73.15
3.767
MC13820 Technical Data, Rev. 1.1
28
Freescale Semiconductor
Scattering Parameters
Table 14. Bypass Mode Scattering Parameters
(V
CC1
and V
CC3
= 2.75
V
,
B
and and Gain grounded, Enable = 2.75
V
,
R
bias resistor R1 = 1.2 k
Ω
, I
CC
= 3 µA)
S
11
S
21
S
12
S
22
f
(GHz)
|S
11
|
∠ φ
|S
11
|
∠ φ
|S
11
|
∠ φ
|S
11
|
∠ φ
0.7
0.8
0.9
1
0.556
0.514
0.475
0.459
0.427
0.412
0.391
0.379
0.368
0.358
0.352
0.346
0.341
0.334
0.329
0.319
0.308
0.299
0.293
0.285
0.279
0.274
0.267
0.27
-44.11
-46.8
0.573
0.591
0.6
20.27
15.11
10.38
6.77
0.573
0.591
0.599
0.617
0.621
0.632
0.634
0.636
0.638
0.639
0.64
20.39
15.3
0.595
0.549
0.511
0.479
0.462
0.43
-42.94
-43.78
-43.02
-46.66
-47.17
-49.25
-49.35
-50.53
-51.37
-52.64
-53.9
-49.46
-50.05
-50.66
-51.99
-52.85
-53.91
-53.94
-54.86
-55.36
-55.58
-55.61
-56.07
-56.92
-57.96
-57.61
-57.89
-59.25
-60.49
-62.48
-64.02
-66.58
-68.28
-70.53
-72.44
-73.31
-73.49
-73.26
10.66
6.98
0.618
0.623
0.633
0.635
0.637
0.638
0.64
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
3.34
3.51
-0.34
-0.19
-3.09
-2.98
0.421
0.395
0.384
0.374
0.358
0.345
0.334
0.321
0.312
0.314
0.306
0.295
0.291
0.277
0.272
0.258
0.247
0.232
0.241
0.241
0.227
0.209
0.179
-6.45
-6.18
-8.92
-8.66
-11.49
-14.09
-16.37
-18.68
-20.97
-23.12
-24.75
-26.81
-29.13
-31.4
-11.33
-13.92
-16.17
-18.47
-20.85
-22.91
-24.45
-26.59
-28.92
-31.04
-33.11
-35.51
-37.69
-39.66
-42.06
-43.19
-45.19
-47.35
-49.26
-51.84
0.641
0.641
0.641
0.638
0.635
0.636
0.64
0.641
0.641
0.639
0.633
0.636
0.64
-54.87
-56.07
-56.45
-56.2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
-57.47
-59.76
-61.28
-62.5
0.641
0.64
0.64
0.642
0.636
0.635
0.633
0.63
0.636
0.636
0.634
0.629
0.623
0.618
0.617
0.616
0.613
0.61
-33.55
-35.59
-37.84
-39.74
-42.19
-43.48
-45.42
-47.61
-49.49
-52.15
-62.84
-65.72
-67.26
-67.95
-68.55
-64.77
-69.24
-74.2
0.623
0.616
0.616
0.615
0.613
0.61
3.1
3.2
3.3
3.4
3.5
0.264
0.261
0.26
0.26
-76.39
-78.56
0.265
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
29
Scattering Parameters
Table 15. Noise Parameters
(V
CC
= 2.7
V
,
E
nable = 2.75
V
,
R
bias = 1.2 k
Ω
, I
CC
= 4.8 mA)
Gamma Opt
f
NFmin
(dB)
Rn
(
Ω
)
rn
(
Ω
)
G
NF
(dB)
K
(GHz)
Mag
Ang
1
1.11
0.99
0.96
0.96
0.97
0.27
0.29
0.30
0.30
0.30
25.3
40.8
46.9
50.1
54.0
14
13
0.28
0.26
0.25
0.25
0.24
26.21
22.63
20.83
19.8
0.63
0.74
0.70
0.78
0.89
1.575
1.9
12.5
12.5
12
2.14
2.4
18.3
Table 16. Noise Parameters
(V
CC
= 2.7
V
,
E
nable = 2.75
V
,
R
bias = 2 k
Ω
, I
CC
= 2.8 mA)
Gamma Opt
f
NFmin
(dB)
Rn
(
Ω
)
rn
(
Ω
)
G
NF
(dB)
K
(GHz)
Mag
Ang
1
1.16
1.02
0.97
0.96
0.95
0.23
0.35
0.37
0.37
0.37
27.6
39.0
46.2
49.7
54.1
15.5
15
0.31
0.3
26.09
22.57
20.81
19.79
18.3
0.48
0.56
0.53
0.61
0.77
1.575
1.9
14
0.28
0.28
0.27
2.14
2.4
14
13.5
MC13820 Technical Data, Rev. 1.1
30
Freescale Semiconductor
Scattering Parameters
(shaded regions are potentially unstable)
f(GHz)
1.575
NFmin
1.02
Gamma-Opt
0.30/_38.2
Rn (
Ω
)
K
13.5
0.74
Figure 15. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 1.2 k
Ω
(shaded regions are potentially unstable)
f(GHz)
1.575
NFmin
0.97
Gamma-Opt
0.34/_39.1
Rn (
Ω
)
K
17.0
0.56
Figure 16. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 2 k
Ω
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
31
Scattering Parameters
(shaded regions are potentially unstable)
f(GHz)
1.9
NFmin
0.96
Gamma-Opt
0.30/_46.9
Rn (
Ω
)
K
12.5
0.68
Figure 17. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias =1.2 k
Ω
(shaded regions are potentially unstable)
f(GHz)
1.9
NFmin
0.97
Gamma-Opt
0.37/_46.2
Rn (
Ω
)
K
14.0
0.50
Figure 18. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias = 2 k
Ω
MC13820 Technical Data, Rev. 1.1
32
Freescale Semiconductor
Scattering Parameters
(shaded regions are potentially unstable)
f(GHz)
2.1
NFmin
0.96
Gamma-Opt
0.30/_50.1
Rn (
Ω
)
K
12.5
0.76
Figure 19. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 k
Ω
(shaded regions are potentially unstable)
f(GHz)
2.1
NFmin
0.96
Gamma-Opt
0.37/_49.7
Rn (
Ω
)
K
14.0
0.58
Figure 20. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 k
Ω
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
33
Scattering Parameters
(shaded regions are potentially unstable)
f(GHz)
2.3
NFmin
0.96
Gamma-Opt
0.30/_52.8
Rn (
Ω
)
K
12.0
0.85
Figure 21. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias =1.2 k
Ω
(shaded regions are potentially unstable)
f(GHz)
2.3
NFmin
0.95
Gamma-Opt
0.38/_53
Rn (
Ω
)
K
13.5
0.70
Figure 22. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias = 2 k
Ω
MC13820 Technical Data, Rev. 1.1
34
Freescale Semiconductor
Packaging
6 Packaging
LASER MARK FOR PIN 1
IDENTIFICATION IN
THIS AREA
3
A
M
2X
0.1
C
G
0.1
C
1.0 1.00
0.8 0.75
0.05
C
5
3
(0.24)
0.05
0.00
(0.5)
SEATING PLANE
C
2X
DETAIL G
VIEW ROTATED 90° CLOCKWISE
M
0.1
C
B
0.1 C
A B
1.25
0.95
DETAIL M
PIN 1 IDENTIFIER
M
M
0.1
C A B
10
12
EXPOSED DIE
ATTACH PAD
0.05
C
8X
(1.177)
4X
(45°)
12X
0.3
0.18
9
7
1
3
1.25
0.065
0.015
3X
(R0.09)
4X
(0.18)
0.1 C
A B
12X
0.95
DETAIL N
CORNER CONFIGURATION
N
6
4
12X
0.75
0.5
4
8X
0.5
VIEW M-M
NOTES:
1. DIMENSIONS
ARE IN MILLIMETERS.
2. INTERPRET
DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
DETAIL S
(90°)
3. THE
COMPLETE JEDEC DESIGNATOR FOR THIS
PACKAGE IS: HF-PQFP-N.
4. CORNER
CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES ARE FOR
REFERENCE ONLY.
5. COPLANARITY
APPLIES TO LEADS, CORNER LEADS,
AND DIE ATTACH PAD.
4X
(0.25)
0.39
0.31
2X
8X
(0.777)
2X
0.1
0.0
DETAIL S
PIN 1 BACKSIDE IDENTIFIER
DETAIL M
PIN 1 BACKSIDE IDENTIFIER
Figure 23. Outline Dimensions for QFN-12
(Case Outline 1345-01, Issue A)
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
35
Product Documentation
7 Product
Documentation
Table 17
summarizes revisions made to this document since Rev. 1.0 was released.
Table 17. Revision History
Location
Revision
Section 1.1, “Features
”,
on page 1
T
a
ble 1
Maximum Ratings
Updated text.
Updated Thermal Resistance, Junction to Case and added Thermal
Resistance, Junction to Ambient, 4 layer board.
T
a
ble 2
Recommended Operating Conditions
Updated Logic Voltage.
T
a
ble 5
T
r
uth
T
a
ble
Added notes.
T
a
ble 6
T
y
pical 1575 MHz LNA Demo Board
Updated Current Drain
T
y
p numbers.
Performance
T
a
ble 7
T
y
pical 1960 MHz LNA Demo Board
Updated Current Drain.
Performance
T
a
ble 8
T
y
pical 2140 MHz LNA Demo Board
Updated to R1 = 2.0 k
Ω
, R2 = 3.3 k
Ω.
Performance
T
a
ble 9
T
y
pical 2400 MHz LNA Demo Board
Updated to R1 = 2.0 k
Ω
, R2 = 3.3 k
Ω
.
Performance
T
a
ble 10
Bill of Materials
Updated 1575 MHz R1, 1960 MHz R1, 2140 MHz R1, and 2400 MHz R2.
Figure 13
Front Side of Printed Circuit Board
Updated.
MC13820 Technical Data, Rev. 1.1
36
Freescale Semiconductor
NOTES
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor
37
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