NXP-Semicon-MMRF1005HSR5
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Document Number: MMRF1005H
Rev. 1, 4/2015
Freescale Semiconductor
T
e
chnical Data
RF Power Field Effect Transistors
N
–
–
Channel Enhancement
–
–
Mode Lateral MOSFE
T
s
MMRF1005HR5
MMRF1005HSR5
RF power transistors designed for CW and pulse applications operating at
1300 MHz. These devices are suitable for use in defense and commercial CW
and pulse applications, such as DME/IFF systems.
Typical Pulse Performance: V
DD
= 50 Vdc, I
DQ
= 100 mA
P
(W)
f
G
(dB)
(%)
IRL
(dB)
out
ps
D
1300 MHz, 250 W, 50 V
LATERAL N
–
-CHANNEL
RF POWER MOSFETs
Signal Type
(MHz)
Pulse (200
sec,
10% Duty Cycle)
250 Peak
1300
22.7
57.0
— 1 8
Typical CW Performance: V
DD
= 50 Vdc, I
DQ
= 10 mA, T
C
= 61
C
P
(W)
f
G
(dB)
(%)
IRL
(dB)
out
ps
D
Signal Type
(MHz)
CW
230 CW
1300
20.0
53.0
— 2 5
NI
–
-780H
–
-2L
MMRF1005HR5
Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200
sec
Features
Characterized with series equivalent large
–
–
signal impedance parameters
Internally matched for ease of use
Qualified up to a maximum of 50 V
DD
operation
Characterized from 20 to 50 V for extended power range
Integrated ESD protection
Greater negative gate
–
–
source voltage range for improved Class C
operation
NI
–
-780S
–
-2L
MMRF1005HSR5
In tape and reel. R5 suffix = 50 units, 56 mm tape width, 13
–
–
inch reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
–
–
0.5, +120
–
–
6.0, +10
—
6
5 to +150
150
Unit
Vdc
Vdc
C
Drain
–
–
Source Voltage
V
DSS
Gate
–
–
Source Voltage
V
GS
Storage
T
e
mperature Range
Case Operating
T
e
mperature
Operating Junction
T
e
mperature
T
stg
T
C
C
(1)
T
J
225
C
T
o
tal Device Dissipation @ T
= 25
C
P
476
W
C
D
Derate above 25
C
2.38
W/
C
Table 2. Thermal Characteristics
(2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
C/W
Pulse: Case
T
e
mperature 65
C, 250 W Peak, 200
sec Pulse Width, 10% Duty
Cycle, 50 Vdc, I
= 100 mA, 1300 MHz
CW: Case
T
e
mperature 77
C, 235 W CW, 50 Vdc, I
Z
R
JC
0.07
0.42
DQ
JC
= 10 mA, 1300 MHz
DQ
1. Continuous
use at maximum temperature will affect MTT
F
.
2. Refer
to
AN1955
,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.freescale.com/rf
and search for AN1955.
Freescale Semiconductor, Inc., 2013, 2015. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22
–
–
A
1
14)
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
2
B
IV
Table 4. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate
–
–
Source Leakage Current
I
—
120
—
—
—
—
—
1
Adc
Vdc
GSS
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
Drain
–
–
Source Breakdown Voltage
(V =
0 Vdc, I
= 50 mA)
V
—
10
20
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V =
50 Vdc, V
= 0 Vdc)
I
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V =
90 Vdc, V
= 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 640
Adc)
V
V
1.0
2.0
0.1
1.8
2.4
2.7
3.0
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
50 Vdc, I
= 100 mAdc, Measured in Functional
T
e
st)
DD
D
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 1.58 Adc)
V
0.25
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V =
50 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
—
—
—
1.2
58
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V =
50 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
340
iss
(V =
50 Vdc, V
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 50 Vdc, I
= 100 mA, P
= 250 W Peak (25 W Avg.), f = 1300 MHz
DD
DQ
out
Pulse, 200
sec Pulse Width, 10% Duty Cycle
Power Gain
G
21.5
53.5
—
22.7
57.0
— 1 8
24.0
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
IRL
— 9
dB
Typical CW Performance
(In Freescale CW Application Circuit, 50 ohm system) V
= 50 Vdc, I
= 10 mA, P
= 230 W CW, f = 1300 MHz,
DD
DQ
out
T
C
= 61
C
Power Gain
G
—
20.0
—
—
—
dB
%
ps
Drain Efficiency
Input Return Loss
—
—
53.0
— 2 5
D
IRL
dB
Load Mismatch
(In Freescale Application
T
e
st Fixture, 50 ohm system) V
= 50 Vdc, I
= 100 mA, P
= 250 W Peak (25 W Avg.),
DD
DQ
out
f = 1300 MHz, Pulse, 200
sec Pulse Width, 10% Duty Cycle
VSWR 10:1 at all Phase Angles
No Degradation in Output Power
1. Part
internally input matched.
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
2
Z19
Z10
R1
V
V
SUPPLY
BIAS
+
+
+
C7
C8
C9
C10 C11
C12
C1
C2
C3
Z4
C4
Z7
Z18
RF
OUTPUT
Z9
Z11
Z12
Z13
Z14
Z15 Z16
Z17
RF
INPUT
C6
Z1
Z2
Z3
Z5
Z6
Z8
C5
DUT
Z20
Z21
V
SUPPLY
+
C18
C17 C16 C15 C14
C13
Z1
0.447
x 0.063
Microstrip
0.030
x 0.084
Microstrip
0.120
x 0.063
Microstrip
0.855
x 0.293
Microstrip
0.369
x 0.825
Microstrip
0.203
x 0.516
Microstrip
0.105
x 0.530
Microstrip
0.105
x 0.530
Microstrip
0.116
x 0.050
Microstrip
0.122
x 0.050
Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18, Z20
Z19*, Z21*
0.162
x 1.160
Microstrip
0.419
x 1.160
Microstrip
0.468
x 0.994
Microstrip
0.131
x 0.472
Microstrip
0.264
x 0.222
Microstrip
0.500
x 0.111
Microstrip
0.291
x 0.063
Microstrip
0.105
x 0.388
Microstrip
0.854
x 0.052
Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9*
Z10
*Line length includes microstrip bends.
Figure 1. MMRF1005HR5(HSR5) Test Circuit Schematic — 1300 MHz, Pulse
Table 5. MMRF1005HR5(HSR5) Test Circuit Component Designations and Values — 1300 MHz, Pulse
Part
Description
22
F
,
3
5 V
T
a
ntalum Capacitors
0.1
F
,
5
0 V Chip Capacitors
100 pF Chip Capacitors
Part Number
Manufacturer
C1, C2
T491X226K035AT
Kemet
C3, C11, C14
C4, C6, C7, C18
C5
CDR33BX104AKWS
ATC800B101JT500XT
ATC100B4R7CT500XT
ATC100B102JT50XT
ATC700B102FT50XT
ATC200B103KT50XT
MCGPR63V477M13X26
–
–
RH
CRCW120615R0FKEA
—
AVX
ATC
4.7 pF Chip Capacitor
ATC
C8, C17
C9, C16
C10, C15
C12, C13
R1
1000 pF Chip Capacitors
1000 pF Chip Capacitors
10K pF Chip Capacitors
ATC
ATC
ATC
470
F
,
6
3 V Electrolytic Capacitors
15
, 1/4 W Chip Resistor
Multicomp
Vishay
MTL
PCB
Rogers RO4350B, 0.030
,
= 3.66
r
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
3
C7
C9 C11
C3
C4
C12
R1
C1 C2
C8 C10
C5
C6
C17 C15
C18
C13
C16 C14
Figure 2. MMRF1005HR5(HSR5) Test Circuit Component Layout — 1300 MHz, Pulse
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS — PULSE
1000
100
10
60
V
= 50 Vdc, I
= 100 mA, f = 1300 MHz
DQ
DD
Ideal
Pulse Width = 200
sec, Duty Cycle = 10%
59
58
57
C
iss
P3dB = 55.4 dBm
(345 W)
C
oss
P2dB = 55.1 dBm
(326 W)
56
55
P1dB = 54.7 dBm
(293 W)
Measured with
30 mV(rms)ac @ 1 MHz
= 0 Vdc
Actual
V
GS
C
rss
54
53
1
0
10
20
30
40
50
30
31
32
33
34
35
36
37
V
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
P ,
INPUT POWER (dBm) PEAK
in
DS
Figure 3. Capacitance versus Drain
–
-Source Voltage
Figure 4. Output Power versus Input Power
24
23
70
60
25
23
V
= 50 Vdc, I
= 100 mA, f = 1300 MHz
DQ
DD
Pulse Width = 200,
sec Duty Cycle = 10%
21
19
22
21
50
40
V
= 50 V
DD
45 V
G
ps
40 V
30
20
17
20
19
35 V
200
30 V
150
15
13
11
D
I
= 100 mA, f = 1300 MHz
Pulse Width = 200
sec
DQ
25 V
10
0
18
17
Duty Cycle = 10%
20 V
100
1
10
100
500
0
50
250
300
350
400
P
, OUTPUT POWER (WATTS) PEAK
P ,
OUTPUT POWER (WATTS) PEAK
out
out
Figure 6. Power Gain versus Output Power
Figure 5. Power Gain and Drain Efficiency
versus Output Power
24
23
70
70
— 3 0
_
C
V
= 50 Vdc
= 100 mA
DD
V
= 50 V
DD
45 V
I
DQ
40 V
60
60
50
35 V
f = 1300 MHz
Pulse Width = 200
sec
Duty Cycle = 10%
G
ps
30 V
50
22
21
20
19
25 V
40
30
20 V
85
_
C
25
_
C
40
30
20
10
T
=
–
–
30
_
C
C
D
20
25
_
C
I
= 100 mA, f = 1300 MHz
Pulse Width = 200
sec
DQ
10
0
18
17
Duty Cycle = 10%
85
_
C
3
10
100
500
0
50
100
150
200
250
300
350
400
P
, OUTPUT POWER (WATTS) PEAK
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 7. Efficiency versus Output Power
Figure 8. Power Gain and Drain Efficiency
versus Output Power
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — CW
25
24
23
22
21
20
19
60
55
50
45
10 mA
G
I
= 700 mA
300 mA
ps
DQ
700 mA
300 mA
40
35
30
25
10 mA
D
V
= 50 Vdc
DD
18
17
16
f = 1300 MHz
(1)
T
= 61
C
20
15
C
20 40
60 80
100 120 140 160 180 200 220
240 260
280
P
, OUTPUT POWER (WATTS) CW
out
1. Data for graph was collected in a water
–
–
cooled test
fixture. The water inlet temperature = 25
C.
Figure 9. CW Power Gain and Drain Efficiency
versus Output Power
9
8
7
6
5
4
10
10
10
10
10
10
V
P
= 50 Vdc
= 230 W CW
= 53%
DD
out
D
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
C)
J
Figure 10. MTTF versus Junction Temperature — CW
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
6
Z =
10
o
Z
source
Z
load
f = 1300 MHz
f = 1300 MHz
V
= 50 Vdc, I
= 100 mA, P
= 250 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
1300
5.32 + j4.11
1.17 + j1.48
Z
=
T
e
st circuit impedance as measured from
gate to ground.
source
Z
load
=
T
e
st circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 11. Series Equivalent Source and Load Impedance — Pulse
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
7
Z19
Z10
R1
V
V
SUPPLY
BIAS
+
+
+
C8
C9
C10 C11 C12
C13
C1
C2
C3
Z4
C4
Z18
RF
OUTPUT
Z9
C7
Z11
Z12
Z13
Z14
Z15 Z16
Z17
RF
INPUT
Z1
Z2
Z3
Z5
Z6
Z7
Z8
C6
C5
DUT
Z20
Z21
V
SUPPLY
+
C19
C18 C17 C16 C15
C14
Z1
0.447
x 0.063
Microstrip
0.030
x 0.084
Microstrip
0.120
x 0.063
Microstrip
0.855
x 0.293
Microstrip
0.369
x 0.825
Microstrip
0.203
x 0.516
Microstrip
0.105
x 0.530
Microstrip
0.105
x 0.530
Microstrip
0.116
x 0.050
Microstrip
0.122
x 0.050
Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18, Z20
Z19*, Z21*
0.162
x 1.160
Microstrip
0.419
x 1.160
Microstrip
0.468
x 0.994
Microstrip
0.131
x 0.472
Microstrip
0.264
x 0.222
Microstrip
0.500
x 0.111
Microstrip
0.291
x 0.063
Microstrip
0.105
x 0.388
Microstrip
0.854
x 0.052
Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9*
Z10
*Line length includes microstrip bends.
Figure 12. MMRF1005HR5(HSR5) Application Circuit Schematic — 1300 MHz, CW
Table 6. MMRF1005HR5(HSR5) Application Circuit Component Designations and Values — 1300 MHz, CW
Part
Description
22
F
,
3
5 V
T
a
ntalum Capacitors
0.1
F
,
5
0 V Chip Capacitors
100 pF Chip Capacitors
Part Number
Manufacturer
C1, C2
T491X226K035AT
Kemet
C3, C12, C15
C4, C6, C7, C8, C19
C5
CDR33BX104AKWS
ATC800B101JT500XT
ATC100B4R7CT500XT
ATC100B102JT50XT
ATC700B102FT50XT
ATC200B103KT50XT
MCGPR63V477M13X26
–
–
RH
CRCW120615R0FKEA
—
AVX
ATC
4.7 pF Chip Capacitor
ATC
C9, C18
C10, C17
C11, C16
C13, C14
R1
1000 pF Chip Capacitors
1000 pF Chip Capacitors
10K pF Chip Capacitors
ATC
ATC
ATC
470
F
,
6
3 V Electrolytic Capacitors
15
, 1/4 W Chip Resistor
Multicomp
Vishay
MTL
PCB
Rogers RO4350B, 0.030
,
= 3.66
r
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
8
C8
C10 C12
C3
C4
C13
R1
C1 C2
C9 C11
C7
C6
C5
C18 C16
C19
C14
C17 C15
Figure 13. MMRF1005HR5(HSR5) Application Circuit Component Layout — 1300 MHz, CW
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
10
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
11
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
12
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Dec. 2013
Apr. 2015
Initial Release of Data Sheet
T
a
bles 5 and 6,
T
e
st Circuit Component Designations and Values: updated PCB description to reflect most
current board specifications from Rogers, pp. 3, 8
Added CW application circuit for 1300 MHz as follows: schematic, component designations and values,
and component layout, pp. 8
–
–
9
MMRF1005HR5 MMRF1005HSR5
RF Device Data
Freescale Semiconductor
14
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Document Number: MMRF1005H
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