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NXP-Semicon-MMRF1018NR1

Part #NXP-Semicon-MMRF1018NR1
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NXP-Semicon-MMRF1018NR1
Document Number: MMRF1018N  
Rev. 0, 7/2014  
Freescale Semiconductor  
T
e
chnical Data  
RF Power LDMOS Transistors  
Enhancement
–
–
Mode Lateral MOSFE
T
s  
These 90 W RF power LDMOS transistors are designed for wideband RF  
power amplifiers covering the frequency range of 470 to 860 MHz.  
MMRF1018NR1  
MMRF1018NBR1  
Typical Performance (Narrowband
T
e
st Circuit): V

DD

= 50 Vdc, I

DQ  

350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCD
F
.  
=
P
(W)  
f
G
(dB)  
(%)  
ACPR  
(dBc)  
out  
ps  
D
Signal Type  
(MHz)  
470
–
-860 MHz, 90 W, 50 V  
BROADBAND  
RF POWER LDMOS TRANSISTORS  
DVB
–
–
T (8k OFDM)  
18 Avg.  
860  
22.0  
28.5  
–
–
62.0  
Typical Performance (Broadband Reference Circuit): V

DD

= 50 Vdc,  
I

DQ

= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability  
on CCD
F
.  
Output  
Signal PAR
 
Shoulder  
IMD  
TO
–
-270WB
–
-4  
PLASTIC  
MMRF1018NR1  
P
f
G
D
out  
ps  
Signal Type  
(W)  
(MHz) (dB)  
(%)  
26.8  
28.0  
28.3  
(dB)  
8.6  
(dBc)  
–
–
31.8  
–
–
34.4  
–
–
29.2  
DVB
–
–
T (8k OFDM)
 
18 Avg.  
470  
650  
860  
21.6  
22.9  
21.9  
8.7  
7.9  
Features  
TO
–
-272WB
–
-4  
PLASTIC  
MMRF1018NBR1  
Capable of Handling 10:1 VSWR, All Phase Angles @ 50 Vdc, 860 MHz,  
90 W CW Output Power  
Characterized with Series Equivalent Large
–
–
Signal Impedance Parameters  
Internally Input Matched for Ease of Use  
Qualified Up to a Maximum of 50 V

DD

Operation  
Integrated ESD Protection  
PARTS ARE SINGLE
–
-ENDED  
Excellent Thermal Stability  
Greater Negative Gate
–
–
Source Voltage Range for Improved Class C  
Operation  
Gate A  
Gate B  
Drain A  
Drain B  
225
C Capable Plastic Package  
In
T
a
pe and Reel. R1 Suffix = 50 Units, 44 mm
T
a
pe Width, 13
–
–
inch Reel.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Drain
–
–
Source Voltage  
V
–
–
0.5, +120  
–
–
6.0, +10  
—
6
5 to +150  
150  
Vdc  
Vdc  
C  
DSS  
(
T
o
p View)  
Gate
–
–
Source Voltage  
V
GS  
Note: Exposed
 
backside of the package is  
the source terminal for the transistor.  
Storage
T
e
mperature Range  
Case Operating
T
e
mperature  
T
stg  
T
C  
C
Figure 1. Pin Connections  
(1,2)  
Operating Junction
T
e
mperature  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
C/W  
JC  
Case
T
e
mperature 76
C, 18 W CW, 50 Vdc, I
 
= 350 mA, 860 MHz  
0.79  
0.82  
DQ  
Case
T
e
mperature 80
C, 90 W CW, 50 Vdc, I
 
= 350 mA, 860 MHz  
DQ  
1. Continuous
 
use at maximum temperature will affect MTT
F
.  
2. MTTF
 

calculator available at http://www.freescale.com/rf. Select Software &

T
o
ols/Development
T
o
ols/Calculators to access MTTF  
calculators by product.  
3. Refer
 
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.  

Select Documentation/Application Notes
–
–
A
N1955.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22
–
–
A
1
14)  
Machine Model (per EIA/JESD22
–
–
A
1
15)  
Charge Device Model (per JESD22
–
–
C101)  
2 (2001
–
–
4000 V)  
B (201
–
–
400 V)  
IV (>1000 V)  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020  
3
260  
C  
Table 5. Electrical Characteristics
 
(T =
 
25
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Off Characteristics  
Gate
–
–
Source Leakage Current  
I
—
120  
—
—
—
—
—
0.5  
—
Adc  
Vdc  
GSS  
(V =
 
5 Vdc, V
 
= 0 Vdc)  
GS  
DS  
Drain
–
–
Source Breakdown Voltage  
(I =
 
50 mA, V
 
= 0 Vdc)  
V
(BR)DSS  
D
GS  
Zero Gate Voltage Drain Leakage Current  
(V =
 
50 Vdc, V
 
= 0 Vdc)  
I
I
10  
20  
Adc  
Adc  
DSS  
DSS  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
—
(V =
 
100 Vdc, V
 
= 0 Vdc)  
DS  
GS  
On Characteristics  
Gate Threshold Voltage  
(V =
 
10 Vdc, I
 
= 200
Adc)  
V
0.9  
2.0  
—
1.6  
2.7  
0.2  
2.4  
3.5  
—
Vdc  
Vdc  
Vdc  
GS(th)  
GS(Q)  
DS(on)  
DS  
D
Gate Quiescent Voltage  
(V =
 
50 Vdc, I
 
= 350 mAdc, Measured in Functional
T
e
st)  
V
DD  
D
Drain
–
–
Source On
–
–
V
oltage  
(V =
 
10 Vdc, I
 
= 0.5 Adc)  
V
GS  
D
Dynamic Characteristics  
Reverse Transfer Capacitance  
(V =
 
50 Vdc
30 mV(rms)ac @ 1 MHz, V
 
= 0 Vdc)  
DS  
C
—
—
—
41  
—
—
—
pF  
pF  
pF  
rss  
GS  
Output Capacitance  
(V =
 
50 Vdc
30 mV(rms)ac @ 1 MHz, V
 
= 0 Vdc)  
DS  
C
oss  
65.4  
591  
GS  
(1)  
Input Capacitance  
C
iss  
(V =
 
50 Vdc, V
 
= 0 Vdc
30 mV(rms)ac @ 1 MHz)  
DS  
GS  
Functional Tests
(In Freescale DVB
–
–
T Narrowband
T
e
st Fixture, 50 ohm system) V
 
= 50 Vdc, I
 
= 350 mA, P
 
= 18 W Avg.,  
DD  
DQ  
out  
f = 860 MHz, DVB
–
–
T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
4 MHz Offset @ 4 kHz Bandwidth.  
Power Gain  
G
21.0  
27.5  
—
22.0  
28.5  
–
–
62.0  
— 1 4  
24.0  
—
dB  
%
ps  
D
Drain Efficiency  
Adjacent Channel Power Ratio  
Input Return Loss  
ACPR  
IRL  
–
–
60.0  
— 9  
dBc  
dB  
—
1. Part
 
internally input matched.  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
2

V
SUPPLY  
+
V
BIAS  
C8  
C9  
C10  
+
R1  
C1  
C2  
C3  
Z8  
Z10  
RF  
OUTPUT  
C4 R2  
Z6  
Z9  
Z12 Z13  
Z14  
Z15 Z16  
Z17  
Z18  
RF  
INPUT  
Z1  
Z2  
Z3 Z4 Z5  
Z7  
C14  
C15 C11  
C12  
C13  
C5  
DUT  
C6  
C7  
Z11  
+
C16  
C17  
C18  
Z1  
0.266
 
0.067
Microstrip  
0.331
 
0.067
Microstrip  
0.598
 
0.067
Microstrip  
0.315
 
0.276
Microstrip  
0.054
 
0.669
Microstrip  
0.419
 
0.669
Microstrip  
0.256
 
0.669
Microstrip  
0.986
 
0.071
Microstrip  
0.201
 
0.571
Microstrip  
Z10, Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
Z17  
Z18  
1.292
 
0.079
Microstrip  
0.680
 
0.571
Microstrip  
0.132
 
0.117
Microstrip  
0.705
 
0.117
Microstrip  
0.159
 
0.117
Microstrip  
0.140
 
0.067
Microstrip  
0.077
 
0.067
Microstrip  
0.163
 
0.067
Microstrip  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9  
Figure 2. MMRF1018NR1(NBR1) 860 MHz Narrowband Test Circuit Schematic  
Table 6. MMRF1018NR1(NBR1) 860 MHz Narrowband Test Circuit Component Designations and Values  
Part  
Description  
Part Number  
Manufacturer  
C1  
22
F
,
3
5 V
T
a
ntalum Capacitor  
T491X226K035AT  
Kermet  
C2, C9, C17  
10
F
,
5
0 V Chip Capacitors  
43 pF Chip Capacitors  
GRM55DR61H106KA88L  
ATC100B430JT500XT  
ATC100B6R2BT500XT  
ATC100B2R2JT500XT  
ATC100B9R1CT500XT  
EEVFK2A221M  
Murata  
ATC  
C3, C5, C8, C14, C16  
C4  
6.2 pF Chip Capacitor  
ATC  
C6  
2.2 pF Chip Capacitor  
ATC  
C7  
9.1 pF Chip Capacitor  
ATC  
C10, C18  
C11, C15  
C12  
220
F
,
1
00 V Electrolytic Capacitors  
7.5 pF Chip Capacitors  
3.0 pF Chip Capacitor  
Panasonic
–
–
ECG  
ATC  
ATC100B7R5CT500XT  
ATC100B3R0CT500XT  
ATC100B0R7BT500XT  
CRCW120610KOJNEA  
CRCW120610ROJNEA  
RF
–
–
35  
ATC  
C13  
0.7 pF Chip Capacitor  
ATC  
R1  
10 k
, 1/4 W Chip Resistor  
10
, 1/4 W Chip Resistor  
Vishay  
Vishay  
T
a
conic  
R2  
PCB  
0.030
,
= 3.5  
r
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
3

– –  
C1  
C10  
C8  
C9  
R1  
C2  
C3  
C4  
C11  
C14  
C13  
R2  
C15  
C5  
C6  
C12  
C7  
C16  
C17  
C18  
–
Figure 3. MMRF1018NR1(NBR1) 860 MHz Narrowband Test Circuit Component Layout  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
4

TYPICAL CHARACTERISTICS  
1000  
100  
10  
24  
70  
C
V
= 50 Vdc, I
 
= 350 mA, f = 860 MHz  
DQ  
iss  
DD  
23  
60  
50  
G
ps  
22  
21  
40  
C
C
oss  
20  
19  
30  
20  
rss  
D
18  
17  
10  
0
Measured with
30 mV(rms)ac @ 1 MHz, V
 
= 0 Vdc  
GS  
0
10  
20  
30  
40  
50  
1
10  
100  
200  
V
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)  
P
, OUTPUT POWER (WATTS)  
out  
DS  
Figure 4. Capacitance versus Drain
–
-Source Voltage  
Figure 5. CW Power Gain and Drain Efficiency  
versus Output Power (Narrowband Test Circuit)  
56  
55  
54  
53  
25  
P3dB = 51.28 dBm (134.3 W)  
Ideal  
I
= 350 mA, f = 860 MHz  
DQ  
24  
23  
22  
21  
P2dB = 51.06 dBm (127.6 W)  
P1dB = 50.7 dBm (117.5 W)  
52  
51  
50  
Actual  
20  
19  
50 V  
49  
18  
17  
16  
45 V  
48  
47  
V
= 40 V  
V
= 50 Vdc, I
 
= 350 mA, f = 860 MHz  
DQ  
DD  
DD  
— 6
 
— 5  
— 4  
— 3  
— 2  
— 1  
0
1
2
3
4
10 20
 
30 40 50
 
60 70 80 90
 
100 110 120 130
 
140 150  
, OUTPUT POWER (WATTS)  
P ,
 
INPUT POWER (dBm)  
P
in  
out  
Figure 7. CW Power Gain versus Output Power  
(Narrowband Test Circuit)  
Figure 6. CW Output Power versus Input Power  
(Narrowband Test Circuit)  
25  
70  
T
=
–
–
30
_
C  
V
= 50 Vdc, I
 
= 350 mA, f = 860 MHz  
DQ  
C
DD  
24  
23  
22  
21  
20  
19  
60  
50  
G
ps  
85
_
C  
25
_
C  
T
=
–
–
30
_
C  
C
40  
30  
20  
10  
85
_
C  
25
_
C  
D
18  
0
200  
1
10  
, OUTPUT POWER (WATTS)  
100  
P
out  
Figure 8. CW Power Gain and Drain Efficiency versus  
Output Power (Narrowband Test Circuit)  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
5

TYPICAL CHARACTERISTICS — TWO
–
-TONE (NARROWBAND TEST CIRCUIT)  
— 1 0  
— 2 0  
V
= 50 Vdc, P
 
= 90 W (PEP), I
 
= 350 mA  
out DQ  
DD  
— 2 5  
V
= 50 Vdc, I
 
= 350 mA, f1 = 854 MHz  
DQ  
DD  
f = 860 MHz, Two
–
–
T
one Measurements  
— 2 0  
— 3 0  
— 4 0  
f2 = 860 MHz, Two
–
–
T
one Measurements  
— 3 0  
— 3 5  
— 4 0  
— 4 5  
— 5 0  
3rd Order  
3rd Order  
5th Order  
7th Order  
5th Order  
— 5 0  
— 5 5  
— 6 0  
— 6 5  
— 6 0  
— 7 0  
7th Order  
100  
1
10  
200  
1
10  
90  
P
, OUTPUT POWER (WATTS) PEP  
TWO
–
–
TONE SPACING (MHz)  
out  
Figure 9. Intermodulation Distortion Products  
versus Output Power  
Figure 10. Intermodulation Distortion  
Products versus Two
–
-Tone Spacing  
23.5  
23  
— 1 0  
— 2 0  
V
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz  
DD  
Two
–
–
T
one Measurements, 6 MHz Tone Spacing  
I
= 450 mA  
DQ  
22.5  
22  
— 3 0  
— 4 0  
— 5 0  
— 6 0  
350 mA  
300 mA  
250 mA  
I
= 250 mA  
DQ  
21.5  
21  
300 mA  
V
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz  
DD  
20.5  
20  
Two
–
–
T
one Measurements, 6 MHz Tone Spacing  
450 mA  
350 mA  
P
1
10  
100  
200  
1
10  
, OUTPUT POWER (WATTS) PEP  
100  
200  
P
, OUTPUT POWER (WATTS) PEP  
out  
out  
Figure 12. Third Order Intermodulation  
Distortion versus Output Power  
Figure 11. Two
–
-Tone Power Gain versus  
Output Power  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
6

TYPICAL CHARACTERISTICS — DVB
–
-T (8k OFDM)  
100  
10  
— 2 0  
— 3 0  
— 4 0  
7.61 MHz  
1
— 5 0  
4 kHz BW  
4 kHz BW  
— 6 0  
— 7 0  
— 8 0  
— 9 0  
0.1  
0.01  
ACPR Measured at 4 MHz Offset  
from Center Frequency  
DVB
–
–
T (8k OFDM)  
64 QAM Data Carrier Modulation  
5 Symbols  
DVB
–
–
T (8k OFDM)  
64 QAM Data Carrier Modulation, 5 Symbols  
0.001  
–
–
100  
—
1
1 0  
0.0001  
0
2
4
6
8
10  
12  
— 5  
— 4  
— 3  
— 2  
— 1  
0
1
2
3
4
5
PEAK
–
–
TO
–
–
A
VERAGE (dB)  
f, FREQUENCY (MHz)  
Figure 13. Single
–
-Carrier DVB
–
-T (8k OFDM)  
Figure 14. DVB
–
-T (8k OFDM) Spectrum  
23  
22.5  
22  
— 5 4  
V
= 50 Vdc, f = 860 MHz  
DD  
I
= 450 mA  
DQ  
DVB
–
–
T (8k OFDM), 64 QAM Data  
Carrier Modulation, 5 Symbols  
— 5 6  
— 5 8  
— 6 0  
350 mA  
300 mA  
I
= 250 mA  
300 mA  
DQ  
— 6 2  
21.5  
21  
250 mA  
— 6 4  
— 6 6  
— 6 8  
V
= 50 Vdc, f = 860 MHz  
DD  
350 mA  
450 mA  
DVB
–
–
T (8k OFDM), 64 QAM Data  
Carrier Modulation, 5 Symbols  
20.5  
1
10  
40  
1
10  
P ,
 
OUTPUT POWER (WATTS) AVG.  
out  
40  
P
, OUTPUT POWER (WATTS) AVG.  
out  
Figure 15. Single
–
-Carrier DVB
–
-T (8k OFDM) Power Gain  
versus Output Power (Narrowband Test Circuit)  
Figure 16. Single
–
-Carrier DVB
–
-T (8k OFDM) ACPR  
versus Output Power (Narrowband Test Circuit)  
50  
— 4 5  
— 3 0
_
C  
V
= 50 Vdc, I
 
= 350 mA  
DQ  
DD  
f = 860 MHz, DVB
–
–
T (8k OFDM)  
64 QAM Data Carrier Modulation  
5 Symbols  
— 5 0  
40  
D
25
_
C  
— 5 5  
— 6 0  
— 6 5  
30  
20  
10  
0
85
_
C  
G
ps  
85
_
C  
=
–
–
30
_
C  
T
C
25
_
C  
ACPR  
— 7 0  
1
10  
, OUTPUT POWER (WATTS) AVG.  
40  
P
out  
Figure 17. Single
–
-Carrier DVB
–
-T (8k OFDM) Drain  
Efficiency, Power Gain and ACPR versus Output Power  
(Narrowband Test Circuit)  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
7

TYPICAL CHARACTERISTICS  
9
8
10  
V
P
= 50 Vdc  
= 18 W Avg.  
= 28.5%  
DD  
out  
10  
D
7
6
5
4
10  
10  
10  
10  
90  
110  
130  
150  
170  
190  
210  
230  
250  
T , JUNCTION TEMPERATURE (
C)  
J

MTTF calculator available at http://www.freescale.com/rf. Select  

Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
Figure 18. MTTF versus Junction Temperature
–
– CW  
V
= 50 Vdc, I
 
= 350 mA, P
 
= 18 W Average  
DQ out  
DD  
f
Z
Z
load  
source  
MHz  
860  
1.58
–
–
j
0.89  
3.51
–
–
j
3.98  
Z
Z
=
T
e
st circuit impedance as measured from  
gate to ground.  
source  
=
T
e
st circuit impedance as measured from  
drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under  
Test  
Input  
Matching  
Network  
Z
Z
source  
load  
Figure 19. Series Equivalent Source and Load Impedance (Narrowband Test Circuit)  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
8

470
–
-860 MHz BROADBAND REFERENCE CIRCUIT  
V

DD

= 50 Vdc, I

DQ

= 450 mA, Channel Bandwidth = 8 MHz, Input  
Signal PAR = 9.5 dB @ 0.01% Probability on CCD
F
.  
Output  
PAR  
(dB)  
IMD  
Shoulder  
(dBc)  
P
f
G
D
out  
ps  
Signal Type  
(W)  
(MHz) (dB)  
(%)  
11.6  
11.8  
11.9  
18.2  
18.6  
18.9  
26.8  
28.0  
28.3  
DVB
–
–
T (8k OFDM)  
4.5 Avg.  
470  
650  
860  
470  
650  
860  
470  
650  
860  
21.5  
22.8  
21.8  
21.6  
22.8  
21.8  
21.6  
22.9  
21.9  
9.9  
9.9  
9.8  
9.5  
9.7  
9.5  
8.6  
8.7  
7.9  
–
–
37.5  
–
–
41.7  
–
–
40.3  
–
–
37.4  
–
–
40.2  
–
–
39.0  
–
–
31.8  
–
–
34.4  
–
–
29.2  
9 Avg.  
18 Avg.  
R1  
V
DD  
V
GG  
C14 C15  
C16 C17  
C13  
C20  
C5  
C6  
C7  
C4  
Q1  
C1  
C12  
C9  
C2  
C8  
C11  
C18 C19  
C10  
C3  
Figure 20. MMRF1018NR1(NBR1) 470
–
-860 MHz Broadband 2

3
Compact Reference Circuit Component Layout  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
9

470
–
-860 MHz BROADBAND REFERENCE CIRCUIT  
Table 7. MMRF1018NR1(NBR1) 470
–
-860 MHz Broadband 2

3
Reference Circuit Component Designations and  
Values  
Part  
Description  
100 pF Chip Capacitors  
Part Number  
Manufacturer  
C1, C12  
C2  
ATC100B101JT500XT  
ATC  
ATC  
ATC  
ATC  
ATC  
ATC  
ATC  
1.8 pF Chip Capacitor  
ATC100B1R8BT500XT  
ATC100B6R2BT500XT  
ATC100B130JT500XT  
ATC100B2R2JT500XT  
ATC100B150JT500XT  
ATC100B3R9CT500XT  
T491D476K016AS  
C3225X7R2A225KT  
ATC100B221JT200XT  
MCGPR63V477M13X26
–
–
RH  
MRF6V3090NBR1  
CRCW120610RJ  
C3  
6.2 pF Chip Capacitor  
C4, C5, C6  
13 pF Chip Capacitors  
C7, C8, C11  
2.2 pF Chip Capacitors  
15 pF Chip Capacitor  
C9  
C10  
3.9 pF Chip Capacitor  
C13  
47
F
,
1
6 V
T
a
ntalum Capacitor  
2.2
F
,
1
00 V Chip Capacitors  
220 pF Chip Capacitors  
470
F
,
6
3 V Electrolytic Capacitor  
RF High Power Transistor  
10
, 1/4 W Chip Resistor  
Kemet  
TDK  
C14, C17, C19  
C15, C16, C18  
ATC  
C20  
Q1  
Multicomp  
Freescale  
Vishay  
MTL  
R1  
PCB  
Rogers RO4350B, 0.030
,
= 3.66  
—
r
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
10  

TYPICAL CHARACTERISTICS — 470
–
-860 MHz BROADBAND REFERENCE CIRCUIT  
24  
23  
22  
21  
20  
19  
18  
60  
50  
40  
30  
V
= 50 Vdc, I
 
= 450 mA, DVB
–
–
T (8k OFDM)  
DQ  
DD  
64 QAM Data Carrier Modulation, 5 Symbols  
G
ps  
P
= 4.5 W  
out  
9 W  
18 W  
18 W  
D
20  
10  
0
9 W  
4.5 W  
450 500  
550 600  
650  
700 750 800 850 900  
f, FREQUENCY (MHz)  
Figure 21. Single
–
-Carrier DVB
–
-T (8k OFDM) Power Gain and Drain  
Efficiency versus Frequency (Broadband Reference Circuit)  
12  
11  
10  
0
V
= 50 Vdc, I
 
= 450 mA, DVB
–
–
T (8k OFDM)  
DQ  
DD  
64 QAM Data Carrier Modulation, 5 Symbols  
— 5  
P
= 4.5 W  
9 W  
out  
— 1 0  
— 1 5  
— 2 0  
— 2 5  
— 3 0  
— 3 5  
9
8
7
PAR  
18 W  
6
5
4
3
(1)  
18 W  
9 W  
IMD  
— 4 0  
— 4 5  
4.5 W  
450 495 540 585 630 675 720 765 810 855 900  
f, FREQUENCY (MHz)  
(1) Intermodulation
 
distortion shoulder measurement made using  
delta marker at 4.2 MHz offset from center frequency.  
Figure 22. Single
–
-Carrier DVB
–
-T (8k OFDM) Output PAR and IMD  
Shoulder versus Frequency (Broadband Reference Circuit)  
26  
25  
24  
23  
70  
60  
50  
40  
30  
V
= 50 Vdc, I
 
= 450 mA  
DQ  
DD  
620 MHz  
Pulse Width = 100
sec, 10% Duty Cycle  
860 MHz  
740  
MHz  
470 MHz  
G
ps  
620 MHz  
860 MHz  
740 MHz  
22  
21  
20  
19  
470 MHz  
3
20  
10  
0
D
1
10  
, OUTPUT POWER (WATTS) PEAK  
100  
200  
P
out  
Figure 23. Power Gain and Drain Efficiency versus  
Output Power (Broadband Reference Circuit)  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
11  

PACKAGE DIMENSIONS  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
12  

MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
13  

MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
14  

MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
15  

MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
16  

MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
17  

PRODUCT DOCUMENTATION AND SOFTWARE  
Refer to the following resources to aid your design process.  
Application Notes  
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over
–
–
Molded Plastic Packages  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages  
AN3789: Clamping of High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages  
Engineering Bulletins  
EB212: Using Data Sheet Impedances for RF LDMOS Devices  
Software  
Electromigration MTTF Calculator  

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &  

T
o
ols tab on the part’s Product Summary page to download the respective tool.  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
July 2014  
Initial Release of Data Sheet  
MMRF1018NR1 MMRF1018NBR1  
RF Device Data  
Freescale Semiconductor, Inc.  
18  

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E
2014 Freescale Semiconductor, Inc.  
Document Number: MMRF1018N  
Rev. 0, 7/2014  

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