NXP-Semicon-MRF1K50GNR5
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Document Number: MRF1K50N
Rev. 0, 11/2016
NXP Semiconductors
T
e
chnical Data
RF Power LDMOS Transistors
High Ruggedness N
–
–
Channel
Enhancement
–
–
Mode Lateral MOSFE
T
s
MRF1K50N
MRF1K50GN
These high ruggedness devices are designed for use in high VSWR industrial,
scientific and medical applications, as well as radio and VHF TV broadcast,
sub
–
–
GHz aerospace and mobile radio applications. Their unmatched input and
output design allows for wide frequency range use from 1.8 to 500 MHz.
1.8–500 MHz, 1500 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
P
(W)
G
(dB)
η
D
(%)
out
ps
Signal Type
(1,2)
87.5
–
–
108
CW
1421 CW
23.1
23.4
83.2
75.1
OM
–
-1230
–
-4L
PLASTIC
MRF1K50N
(3,4)
230
Pulse
1500 Peak
(100
μ
sec, 20% Duty Cycle)
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(3)
230
Pulse
> 65:1 at all
15 Peak
(3 dB
50
No Device
Degradation
OM
–
-1230G
–
-4L
PLASTIC
(100
μ
sec, 20%
Phase Angles
Duty Cycle)
Overdrive)
MRF1K50GN
1. Data
from 87.5–108 MHz broadband reference circuit (page 5).
2. The
values shown are the center band performance numbers across the indicated
frequency range.
3. Data
from 230 MHz narrowband production test fixture (page 11).
4. All
data measured in fixture with device soldered to heatsink.
Drain A
Drain B
3
4
1
2
Gate A
Gate B
Features
•
•
•
•
•
•
High drain
–
–
source avalanche energy absorption capability
Unmatched input and output allowing wide frequency range utilization
Device can be used single
–
–
ended or in a push
–
–
pull configuration
Characterized from 30 to 50 V for ease of use
Suitable for linear application
Integrated ESD protection with greater negative gate
–
–
source voltage range
for improved Class C operation
(
T
o
p View)
•
Recommended driver: MRFE6VS25N (25 W)
Note: Exposed
backside of the package is
the source terminal for the transistor.
Typical Applications
Figure 1. Pin Connections
•
Industrial, Scientific, Medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
Broadcast
– Radio broadcast
– VHF TV broadcast
•
•
Aerospace
– VHF omnidirectional range (VOR)
– HF and VHF communications
– Weather radar
•
Mobile Radio
– VHF and UHF base stations
©
2016 NXP B.
V
.
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +133
–6.0, +10
50
Unit
Vdc
Vdc
Vdc
°
C
Drain
–
–
Source Voltage
V
DSS
Gate
–
–
Source Voltage
V
GS
DD
Operating Voltage
V
Storage
T
e
mperature Range
Case Operating
T
e
mperature Range
Operating Junction
T
e
mperature Range
T
stg
–
6
5 to +150
–40 to +150
–40 to +225
T
C
°
C
(1,2)
T
J
°
C
T
o
tal Device Dissipation @ T
= 25
°
C
P
2941
W
C
D
Derate above 25
°
C
14.71
W/
°
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
0.068
°
C/W
JC
CW: Case
T
e
mperature 80
°
C, 1500 W CW, 50 Vdc, I
= 200 mA, 98 MHz
DQ(A+B)
Thermal Impedance, Junction to Case
Z
θ
0.015
°
C/W
JC
Pulse: Case
T
e
mperature 75
°
C, 1500 W Peak, 100
μ
sec Pulse Width, 20% Duty Cycle,
50 Vdc, I
= 100 mA, 230 MHz
DQ(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22
–
–
A
1
14)
Charge Device Model (per JESD22
–
–
C101)
2, passes 2500 V
C3, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020
3
260
°
C
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate
–
–
Source Leakage Current
I
—
133
—
—
—
—
—
1
—
μ
Adc
Vdc
GSS
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
Drain
–
–
Source Breakdown Voltage
(V =
0 Vdc, I
= 100 mAdc)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V =
50 Vdc, V
= 0 Vdc)
I
10
100
μ
Adc
mAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V =
133 Vdc, V
= 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V =
10 Vdc, I
= 2130
μ
Adc)
V
V
1.7
1.9
—
2.2
2.4
2.7
2.9
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
50 Vdc, I
= 100 mAdc, Measured in Functional
T
e
st)
D(A+B)
DD
(4)
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 2.4 Adc)
V
0.15
33.5
GS
D
(4)
Forward Transconductance
(V =
10 Vdc, I
= 36 Adc)
g
—
—
fs
DS
D
1. Continuous
use at maximum temperature will affect MTT
F
.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
4. Each
side of device measured separately.
(continued)
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V =
50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
—
—
—
5.77
219
683
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V =
50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V =
50 Vdc, V
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
DS
GS
(2,3)
Functional Tests
(In NXP Production
T
e
st Fixture, 50 ohm system) V
= 50 Vdc, I
= 100 mA, P
= 1500 W Peak
DQ(A+B) out
DD
(300 W Avg.), f = 230 MHz, 100
μ
sec Pulse Width, 20% Duty Cycle
Power Gain
G
21.5
23.0
73.0
–16
25.0
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
η
68.0
—
IRL
–9
dB
Table 6. Load Mismatch/Ruggedness
(In NXP Production
T
e
st Fixture, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
230
Pulse
> 65:1 at all
15 Peak
50
No Device Degradation
(100
μ
sec, 20% Duty Cycle)
Phase Angles
(3 dB Overdrive)
Table 7. Ordering Information
Device
Tape and Reel Information
Package
MRF1K50NR5
OM
–
–
1230
–
–
4L
R5 Suffix = 50 Units, 56 mm
T
a
pe Width, 13
–
–
inch Reel
MRF1K50GNR5
OM
–
–
1230G
–
–
4L
1. Each
side of device measured separately.
2. Devices
tested without thermal grease or solder under the transistor.
3. Measurements
made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1.08
10000
1000
100
10
I
= 100 mA
Measured with
±
30 mV(rms)ac @ 1 MHz
= 0 Vdc
500 mA
V
= 50 Vdc
DQ(A+B)
DD
1.06
V
GS
1.04
C
iss
1500 mA
1.02
1
C
oss
2000 mA
0.98
0.96
0.94
0.92
C
rss
1
–50
–25
0
25
50
75
100
0
10
V
20
30
40
50
T ,
CASE TEMPERATURE (
°
C)
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
C
DS
Note:
Each side of device measured separately.
I
(mA)
Slope (mV/
°
C)
DQ
100
–2.76
–2.38
–2.20
–1.76
Figure 2. Capacitance versus Drain
–
-Source Voltage
500
1500
2000
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
8
10
V
= 50 Vdc
DD
I
D
= 35.2 Amps
7
6
5
4
3
10
10
10
10
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
°
C)
J
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature — CW
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
4
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 8. 87.5–108 MHz Broadband Performance
(In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I
= 200 mA, P
= 7 W, CW
DQ(A+B) in
DD
Frequency
(MHz)
G
η
P
out
(W)
ps
D
(dB)
22.5
23.1
22.8
(%)
81.7
83.2
79.1
87.5
98
1257
1421
1328
108
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
5
87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.88
″ ×
5.12
″
(73 mm
×
130 mm)
C21
C22
C6
L4
C25
C26
C27
C7
R2
C28
C4
C5
C20
C19
C18
C17
L1
L2
C11
R1
C3
C16
Q1
C24
C12
C1
C2*
C23*
C15*
L3
R3
C14*
C13
swedddddddd
C8
MRF1K50N
Rev. 0
C10
C9
D87696
*C2, C14, C15 and C23 are mounted vertically.
Note: Q1 leads are soldered to the PCB with L3 soldered directly on top of the drain leads.
0.26
(6.5)
0.63
(16.0)
0.26
(6.6)
Inches
L3 total wire length = 2.04
″
(52 mm)
(mm)
Figure 5. MRF1K50N 87.5–108 MHz Broadband Reference Circuit
Component Layout
Figure 6. MRF1K50N 87.5–108 MHz Broadband Reference Circuit
Component Layout — Bottom
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
6
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 9. MRF1K50N Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz
Part
Description
Part Number
Manufacturer
C1, C3, C6, C9, C18, C19,
C20, C21, C22
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C2
33 pF Chip Capacitor
ATC100B330JT500XT
ATC200B103KT50XT
ATC100B471JT200XT
MIN02-002EC910J-F
MIN02-002DC560J-F
ATC100B2R2JT500XT
ATC100B120GT500XT
EEV-FK1A221M
ATC
ATC
ATC
CDE
CDE
ATC
ATC
C4, C5, C8
10,000 pF Chip Capacitors
C7, C10, C15, C16, C17, C23
470 pF Chip Capacitors
C11
91 p
F
,
3
00 V Mica Capacitor
56 p
F
,
3
00 V Mica Capacitor
2.2 pF Chip Capacitor
C12
C13
C14, C24
C25, C26, C27
C28
12 pF Chip Capacitors
220
μ
F
,
1
00 V Electrolytic Capacitors
22
μ
F
,
3
5 V Electrolytic Capacitor
17.5 nH Inductors, 6 Turns
Panasonic
Nichicon
UUD1V220MCL1GS
B06TJLC
L1, L2
L3
Coilcraft
1.5 mm Non
–
–
T
a
rnish Silver Plated Copper Wire
SP1500NT-001
Scientific Wire Company
Coilcraft
L4
22 nH Inductor
1212VS-22NMEB
MRF1K50N
Q1
RF Power LDMOS Transistor
10
Ω
, 1/4 W Chip Resistor
33
Ω
, 2 W Chip Resistors
NXP
R1
CRCW120610R0JNEA
1-2176070-3
Vishay
R2, R3
PCB
TE Connectivity
MTL
Arlon TC350 0.030
″
,
ε
= 3.5
D87696
r
Note: Refer
to MRF1K50N’s
printed circuit boards and schematics
to download the 87.5–108 MHz heatsink drawing.
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
7
TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
27
85
83
81
26
η
D
25
24
23
22
21
20
19
18
79
77
G
ps
1600
1500
P
out
1400
1300
1200
V
= 50 Vdc, P
= 7 W, l
= 200 mA
DQ(A+B)
DD
in
87 89
91 93 95 97 99 101
103 105 107 109
f, FREQUENCY (MHz)
Figure 7. Power Gain, Drain Efficiency and CW Output Power
versus Frequency at a Constant Input Power
1600
98 MHz
1400
1200
87.5 MHz
108 MHz
1000
800
600
400
200
0
V
= 50 Vdc, I
= 200 mA
DD
DQ(A+B)
0
1
2
3
4
5
6
7
8
9
P
INPUT POWER (WATTS)
in,
Figure 8. CW Output Power versus Input Power and Frequency
30
100
87.5 MHz
29
28
80
60
40
20
η
D
98 MHz
87.5 MHz
108 MHz
27
26
25
24
108 MHz
98 MHz
87.5 MHz
1600
1200
800
400
0
P
out
23
22
21
98 MHz
108 MHz
G
ps
V
= 50 Vdc, l
= 200 mA
DQ(A+B)
DD
0
1
2
3
4
5
6
7
8
9
P ,
INPUT POWER (WATTS)
in
Figure 9. Power Gain, Drain Efficiency and CW Output Power
versus Input Power and Frequency
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
8
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Z =
10
Ω
o
Z
source
f = 108 MHz
f = 87.5 MHz
f = 108 MHz
f = 87.5 MHz
Z
load
f
Z
Z
load
source
MHz
87.5
98
Ω
Ω
4.07 + j5.13
3.93 + j4.84
3.50 + j4.72
3.92 + j2.89
3.39 + j2.35
2.83 + j2.56
108
Z
Z
=
=
T
e
st circuit impedance as measured from
gate to gate, balanced configuration.
source
T
e
st circuit impedance as measured
load
from drain to drain, balanced configuration.
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
—
50
Ω
50
Ω
—
+
Z
Z
source
load
Figure 10. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
9
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
F1
87.5 MHz
Fundamental (F1)
175 MHz
–32 dB
H2
H3
262.5 MHz
–28 dB
H4
H3
H4
H2
350 MHz
–44 dB
(262.5 MHz)
(350 MHz)
(175 MHz)
–32 dB
–28 dB
–44 dB
H3
H2
H4
35 MHz
Span: 350 MHz
Center: 228.5 MHz
Figure 11. 87.5 MHz Harmonics @ 1200 W CW
MRF1K50N MRF1K50GN
10
RF Device Data
NXP Semiconductors
230 MHz NARROWBAND PRODUCTION TEST FIXTURE — 6.0
″ ×
4.0
″
(152 mm
×
102 mm)
C10
C27
C28
C29
C12
C6
C9
D79536
C25
Coax1
Coax3
R1
L3
C18*
C19*
C20*
C2
L1
L2
C15
C13
C4*
C14
C21*
C22*
C23*
C16
C3
C17
C24
C1
L4
R2
Coax4
Coax2
C26
MRF1K50N
Rev. 0
C11
C5
C7
C30
C31
C32
C8
*C4, C18, C19, C20, C21, C22 and C23 are mounted vertically.
Figure 12. MRF1K50N Narrowband Test Circuit Component Layout — 230 MHz
Table 10. MRF1K50N Narrowband Test Circuit Component Designations and Values — 230 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3
C4
22 pF Chip Capacitors
ATC100B220JT500XT
ATC
ATC
27 pF Chip Capacitor
ATC100B270JT500XT
T491X226K035AT
C5, C6
C7, C9
C8, C10
22
μ
F
,
3
5 V
T
a
ntalum Capacitors
0.1
μ
F Chip Capacitors
220 nF Chip Capacitors
1000 pF Chip Capacitors
51 pF Chip Capacitor
Kemet
AVX
CDR33BX104AKWS
C1812C224K5RACTU
ATC100B102JT50XT
ATC100B510JT500XT
ATC800R240JT500XT
ATC800R200JT500XT
ATC100B241JT200XT
ATC100B8R2CT500XT
MCGPR63V477M13X26-RH
UT-141C-25
Kemet
ATC
C11, C12, C25, C26
C13
ATC
C14
24 pF Chip Capacitor
ATC
C15, C16, C17
20 pF Chip Capacitors
ATC
C18, C19, C20, C21, C22, C23
240 pF Chip Capacitors
C24 8.2
pF Chip Capacitor
C27, C28, C29, C30, C31, C32
470
μ
F
,
6
3 V Electrolytic Capacitors
ATC
ATC
Multicomp
Micro
–
–
Coax
Coax1, 2, 3, 4
25
Ω
Semi Rigid Coax Cables, 2.2
″
Shield
Length
L1, L2
L3, L4
R1, R2
PCB
5 nH Inductors
A02TKLC
Coilcraft
Coilcraft
Vishay
MTL
6.6 nH Inductors
GA3093-ALC
CRCW120610R0JNEA
D79536
10
Ω
, 1/4 W Chip Resistors
Arlon AD255A 0.030
″
,
ε
= 2.55
r
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
11
TYPICAL CHARACTERISTICS — 230 MHz
PRODUCTION TEST FIXTURE
1800
1600
1400
1200
1000
V
= 50 Vdc, f = 230 MHz
DD
Pulse Width = 100
μ
sec, 20% Duty Cycle
P
= 6.5 W
in
800
600
400
P
= 3.2 W
in
200
0
0
0.5
1
1.5
2
2.5
3
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
Figure 13. Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
100
80
60
40
20
0
27
68
64
60
56
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
DD
DQ(A+B)
Pulse Width = 100
μ
sec, 20% Duty Cycle
Pulse Width = 100
μ
sec, 20% Duty Cycle
25
23
21
19
17
G
ps
I
= 900 mA
DQ(A+B)
η
D
600 mA
300 mA
100 mA
52
48
44
40
900 mA
600 mA
300 mA
100
100 mA
24
28
32
36
40
44
10
1000
2000
P ,
INPUT POWER (dBm) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 15. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
f
P1dB
(W)
P3dB
(W)
(MHz)
230
1629
1857
Figure 14. Output Power versus Input Power
29
27
25
23
21
19
17
15
13
11
28
90
80
70
60
50
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
I
= 100 mA, f = 230 MHz
DQ(A+B)
Pulse Width = 100
μ
sec, 20% Duty Cycle
Pulse Width = 100
μ
sec, 20% Duty Cycle
26
24
22
20
18
16
G
ps
T
= –40
_
C
C
η
D
40
30
20
25
_
C
85
_
C
50 V
45 V
40 V
35 V
V
= 30 V
DD
85
_
C
10
0
–40
_
C
25
_
C
100
, OUTPUT POWER (WATTS) PEAK
30
0
200 400 600
800 1000
1200 1400
1600 1800 2000
, OUTPUT POWER (WATTS) PEAK
1000
2000
P
P
out
out
Figure 17. Power Gain versus Output Power
and Drain
–
-Source Voltage
Figure 16. Power Gain and Drain Efficiency
versus Output Power
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
12
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
Z
Z
load
source
MHz
Ω
Ω
230
1.0 + j2.0
1.7 + j0.9
Z
Z
=
T
e
st
circuit impedance as measured from
gate to gate, balanced configuration.
source
=
T
e
st
circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
—
50
Ω
50
Ω
—
+
load
Z
Z
source
Figure 18. Narrowband Series Equivalent Source and Load Impedance — 230 MHz
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
13
PACKAGE DIMENSIONS
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
14
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
15
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
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MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
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MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
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MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
19
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over
–
–
Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
•
To Download Resources Specific to a Given Part Number:
1. Go to
http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2016
•
Initial Release of Data Sheet
MRF1K50N MRF1K50GN
RF Device Data
NXP Semiconductors
20
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
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T
e
rmsandConditions
.
NX
P
,
t
he NXP logo, Freescale, and the Freescale logo are trademarks of NXP B.
V
.
All other product or service names are the property of their respective owners.
E
2016 NXP B.
V
.
Document Number: MRF1K50N
Rev. 0, 11/2016
