NXP-Semicon-MRF8P20140WGHSR3
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Document Number: MRF8P20140WH
Rev. 1, 11/2013
Freescale Semiconductor
T
e
chnical Data
MRF8P20140WHR3
MRF8P20140WHSR3
MRF8P20140WGHSR3
RF Power Field Effect Transistors
N
–
–
Channel Enhancement
–
–
Mode Lateral MOSFE
T
s
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
1880
–
-2025 MHz, 24 W AVG., 28 V
SINGLE W
–
-CDMA
Typical Doherty Single
–
–
Carrier W
–
–
CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 500 mA, V
GSB
= 1.2 Vdc, P
out
= 24 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCD
F
.
LATERAL N
–
-CHANNEL
RF POWER MOSFETs
G
(dB)
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1880 MHz
1920 MHz
2025 MHz
16.0
16.0
15.9
42.8
43.7
42.0
8.0
8.1
8.1
–
–
31.0
–
–
32.6
–
–
31.2
NI
–
-780H
–
-4L
MRF8P20140WHR3
Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
Typical P
out
@ 3 dB Compression Point
≃
170 Watts
(1)
)
Features
Designed for Wide Instantaneous Bandwidth Applications. VBW
res
240 MHz.
≃
Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
Production
T
e
sted in a Symmetrical Doherty Configuration
100% PAR
T
e
sted for Guaranteed Output Power Capability
Characterized with Large
–
–
Signal Load
–
–
Pull Parameters and Common Source
S
–
–
Parameters
NI
–
-780S
–
-4L
MRF8P20140WHSR3
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate
–
–
Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
NI
–
–
780H
–
–
4L in
T
a
pe and Reel. R3 Suffix = 250 Units, 56 mm
T
a
pe Width,
13
–
–
inch Reel.
NI
–
-780GS
–
-4L
MRF8P20140WGHSR3
NI
–
–
780S
–
–
4L, NI
–
–
780GS
–
–
4L in
T
a
pe and Reel. R3 Suffix = 250 Units, 32 mm
T
a
pe Width, 13
–
–
inch Reel.
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(
T
o
p View)
Figure 1. Pin Connections
1. P3dB
= P
+ 7.0 dB where P
is the average output power measured using an unclipped W
–
–
CDMA single
–
–
carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCD
F
.
Freescale Semiconductor, Inc., 2011, 2013. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
–
–
0.5, +65
–
–
6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
C
Drain
–
–
Source Voltage
V
DSS
Gate
–
–
Source Voltage
V
GS
DD
Operating Voltage
V
Storage
T
e
mperature Range
Case Operating
T
e
mperature
Operating Junction
T
e
mperature
T
stg
–
–
65 to +150
125
T
C
C
(1,2)
T
J
225
C
CW Operation @ T
= 25
C
CW
140
W
C
Derate above 25
C
0.66
W/
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case
T
e
mperature 80
C, 24 W CW, 28 Vdc, I
Case
T
e
mperature 96
C, 130 W CW
, 28 Vdc, I
= 500 mA, V
= 1.2 Vdc, 1920 MHz
GSB
0.68
0.40
DQA
(3)
= 500 mA, V
= 1.2 Vdc, 1920 MHz
DQA
GSB
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22
–
–
A
1
14)
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
2
A
IV
Table 4. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
5
Adc
Adc
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
I
1
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
(4,5)
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 200
Adc)
V
1.1
—
1.8
2.6
5.2
0.2
2.6
—
Vdc
Vdc
Vdc
Vdc
GS(th)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 500 mAdc)
V
GSA(Q)
GGA(Q)
DS
DA
(6)
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 500 mAdc, Measured in Functional
T
e
st)
V
4.5
0.1
6.0
0.3
DD
DA
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 2 Adc)
V
DS(on)
GS
D
1. Continuous
use at maximum temperature will affect MTT
F
.
2. MTTF
calculator available at http://www.freescale.com/rf. Select Software &
T
o
ols/Development
T
o
ols/Calculators to access MTTF
calculators by product.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
–
–
A
N1955.
4. Exceeds
recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Each
side of device measured separately.
6. V
7. V
and V
= 2.0 x V
must be tied together and powered by a single DC power supply.
DDA
DDB
. Parameter measured on Freescale
T
e
st Fixture, due to resistive divider network on the board. Refer to
T
e
st Circuit
(continued)
GG
GS(Q)
schematic.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
= 500 mA, V
= 1.2 Vdc,
GSB
Max
Unit
(1,2,3,4)
Functional Tests
(In Freescale Doherty
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
DD
DQA
P
= 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2
–
–
Carrier W
–
–
CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
out
Probability on CCD
F
.
A
CPR measured in 3.84 MHz Channel Bandwidth @
5 MHz Offset.
Power Gain
G
15.0
37.5
7.3
16.0
41.2
7.7
18.0
—
dB
%
ps
D
Drain Efficiency
Output Peak
–
–
to
–
–
Average Ratio @ 0.01% Probability on CCDF
PAR
—
dB
dBc
Adjacent Channel Power Ratio
ACPR
—
–
–
31.9
–
–
29.5
(3)
Typical Performance over Frequency
—
(In Freescale Doherty
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 500 mA, V
= 1.2
DD
DQA
GSB
Vdc, P
= 24 W Avg., Single
–
–
Carrier W
–
–
CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCD
F
.
A
CPR
out
measured in 3.84 MHz Channel Bandwidth @
5 MHz Offset.
G
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1880 MHz
1920 MHz
2025 MHz
(dB)
16.0
16.0
15.9
42.8
8.0
8.1
8.1
— 3 1 . 0
— 3 2 . 6
— 3 1 . 2
43.7
42.0
(3)
Typical Performances
(In Freescale Doherty
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 500 mA, V
= 1.2 Vdc,
GSB
DD
DQA
1880
–
–
2025 MHz Bandwidth
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
—
140
170
—
—
W
W
out
out
(5)
@ 3 dB Compression Point
IMD Symmetry @ 24 W PE
P
, P
w
here IMD Third Order
IMD
MHz
out
sym
—
—
133
—
—
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
240
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 145 MHz Bandwidth @ P
= 24 W Avg.
G
—
—
0.25
—
—
dB
out
F
Gain Variation over
T
e
mperature
G
0.013
dB/
C
(
–
–
30
C to +85
C)
Output Power Variation over
T
e
mperature
(
–
–
30
C to +85
C)
P1dB
—
0.003
—
dB/
C
(6)
1. V
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
2. Part
internally matched both on input and output.
3. Measurement
made with device in a Symmetrical Doherty configuration.
4. Measurement
made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GHS) parts.
5. P3dB
= P
+ 7.0 dB where P
is the average output power measured using an unclipped W
–
–
CDMA single
–
–
carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCD
F
.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
3
R2
V
DDA
V
GGA
C18
C19
R3
C15
C16
C14
C4
C7
C6
R6
C12*
MRF8P20140W
Rev. 1.2
C1
C23
C26
C
P
C2*
C9
C17
Z1
C3*
R1
C5
C21
C13*
R7
C11
C10
C22
C8
V
C20
R5
C25
C24
V
GGB
DDB
R4
Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically.
Note 2: V
and V
must be tied together and powered by a single DC power supply.
DDA
DDB
Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout
Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values
Part
Description
0.6 pF Chip Capacitor
Part Number
ATC600F0R6BT250XT
ATC600F8R2BT250XT
GRM55DR61H106KA88L
ATC600F1R2BT250XT
ATC600F120JT250XT
Manufacturer
ATC
C1
C2, C3
8.2 pF Chip Capacitors
10
F
,
5
0 V Chip Capacitors
1.2 pF Chip Capacitor
12 pF Chip Capacitors
ATC
C4, C8, C18, C24
C5
Murata
ATC
C6, C10, C12, C13, C14,
C20
ATC
C7, C11
C9, C17
C15, C21
C16, C22
C19, C25
C23
10
F
,
3
2 V Chip Capacitors
0.1 pF Chip Capacitors
GRM32ER61H106KA12L
ATC600F0R1BT250XT
C4532X7R1H685KT
C3225X7R2A225KT
EEV
–
–
FK2A221M
Murata
ATC
6.8
F
,
5
0 V Chip Capacitors
2.2
F
,
1
00 V Chip Capacitors
220
F
,
1
00 V Chip Capacitors
0.2 pF Chip Capacitor
TDK
TDK
Panasonic
–
–
ECG
ATC
ATC600F0R2BT250XT
ATC600F1R5BT250XT
ATCCW12010T0050GBK
CRCW12061K50FKEA
CRCW12062R2FNEA
1P503S
C26
1.5 pF Chip Capacitor
ATC
R1
50
, Chip Resistor
ATC
R2, R3, R4, R5
R6, R7
Z1
1.5 k
, 1/4 W Chip Resistors
2.2
, 1/4 W Chip Resistors
1700
–
–
2000 MHz Band 90
, 3 dB Hybrid Coupler
Vishay
Vishay
Anaren
Rogers
PCB
0.020
,
= 3.5
R04350B
r
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
4
Single
–
–
ended
4
Quadrature combined
4
4
Doherty
2
Push
–
–
pull
2
Figure 3. Possible Circuit Topologies
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
17
16.8
16.6
16.4
16.2
16
44
42
D
40
V
V
= 28 Vdc, P
= 24 W (Avg.), I
= 500 mA
DD
out
DQA
38
= 1.2 Vdc, 2
–
–
Carrier W
–
–
CDMA, 3.84 MHz Channel
GSB
Bandwidth, 30 MHz Carrier Spacing, Input Signal
PAR = 9.8 dB @ 0.01% Probability on CCDF
36
— 3 0
— 3 1
— 3 2
— 3 3
— 3 4
— 3 5
— 2 5
— 2 6
— 1
G
ps
15.8
15.6
15.4
15.2
15
— 1 . 2
— 1 . 4
— 1 . 6
— 1 . 8
— 2
PARC
— 2 7
— 2 8
— 2 9
— 3 0
IM3
ACPR
1880 1900 1920
1940 1960 1980 2000 2020
2040
f, FREQUENCY (MHz)
Figure 4. 2
–
-Carrier Output Peak
–
-to
–
-Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 24 Watts Avg.
17
16.8
16.6
16.4
16.2
16
43
42
D
41
V
V
= 28 Vdc, P
= 24 W (Avg.), I
= 500 mA
DD
out
DQA
= 1.2 Vdc, 2
–
–
Carrier W
–
–
CDMA, 3.84 MHz
40
GSB
Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
39
— 3 0
— 3 1
— 3 2
— 3 3
— 3 4
— 3 5
— 1 . 6
— 1 . 7
— 1 . 8
— 1 . 9
— 2
G
ps
15.8
15.6
15.4
15.2
15
ACPR
PARC
— 2 . 1
1880 1900 1920
1940 1960 1980 2000 2020
2040
f, FREQUENCY (MHz)
Figure 5. Single
–
-Carrier Output Peak
–
-to
–
-Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 24 Watts Avg.
— 2 0
V
DQA
= 28 Vdc, P
= 24 W (PEP)
out
DD
I
= 500 mA, V
= 1.2 Vdc
GSB
IM3
–
–
U
— 3 0
— 4 0
— 5 0
— 6 0
— 7 0
IM3
–
–
L
IM5
–
–
L
IM5
–
–
U
IM7
–
–
U
IM7
–
–
L
Two
–
–
T
one Measurements
(f1 + f2)/2 = Center Frequency of 1920 MHz
1
10
100
300
TWO
–
–
TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two
–
-Tone Spacing
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
— 2 2
— 2 4
— 2 6
— 2 8
— 3 0
— 3 2
— 3 4
16.5
16
1
0
60
50
V
= 28 Vdc, I
= 500 mA, V
= 1.2 Vdc, f = 1920 MHz
GSB
DD
DQA
Single
–
–
Carrier W
–
–
CDMA, 3.84 MHz Channel Bandwidth
D
15.5
15
— 1
— 2
40
30
20
10
0
G
ps
–
–
1 dB = 14.5 W
— 2
d B = 2
5 W
ACPR
14.5
14
— 3
— 4
PARC
— 3
d B = 3
5 W
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
20 30 40 50
, OUTPUT POWER (WATTS)
13.5
— 5
10
60
P
out
Figure 7. Output Peak
–
-to
–
-Average Ratio
Compression (PARC) versus Output Power
20
60
0
V
V
= 28 Vdc, I
= 500 mA
1880 MHz
D
DD
DQA
= 1.2 Vdc, Single
–
–
Carrier W
–
–
CDMA
GSB
18
16
14
12
10
8
— 1 0
— 2 0
— 3 0
— 4 0
— 5 0
— 6 0
50
40
30
20
10
0
1920 MHz
2025 MHz
G
ps
2025 MHz
1880 MHz
ACPR
1920 MHz
1880 MHz
2025 MHz
1920 MHz
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
1
10
100
200
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 8. Single
–
-Carrier W
–
-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
18
— 1 0
— 2 0
— 3 0
— 4 0
— 5 0
— 6 0
— 7 0
V
= 28 Vdc, I
= 500 mA, V
= 1.2 Vdc, f1 = 1880 MHz
GSB
DD
DQA
f2 = 1910 MHz, 2
–
–
Carrier W
–
–
CDMA, 3.84 MHz Channel
Bandwidth
18
16
14
12
10
8
15
12
9
G
ps
IM5
–
–
L
IM5
–
–
U
IM3
–
–
U
IM3
–
–
L
V
P
= 28 Vdc
= 0 dBm
DD
IM7
–
–
U
IM7
–
–
L
in
6
I
V
= 500 mA
= 1.2 Vdc
DQA
GSB
3
0
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
1
10
100
200
1650 1725
1800 1875 1950 2025
2100 2175 2250
P
, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
out
Figure 9. 2
–
-Carrier W
–
-CDMA Power Gain, IM3, IM5, IM7
versus Output Power
Figure 10. Broadband Frequency Response
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
7
W
–
-CDMA TEST SIGNAL
— 2 0
100
10
3.84 MHz
— 3 0
— 4 0
— 5 0
— 6 0
— 7 0
— 8 0
— 9 0
–
–
100
Channel BW
1
Input Signal
0.1
0.01
W
–
–
CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
5 MHz Offset.
Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF
–
–
ACPR in
+ACPR in
3.84 MHz BW
3.84 MHz BW
— I M 3
i n
3.84 MHz BW
+IM3 in
3.84 MHz BW
0.001
—
1
1 0
–
–
120
0.0001
–
–
75
–
–
6 0 —
4 5 —
3 0 —
1 5
0
15
30
45
60 75
0
2
4
6
8
10
12
f, FREQUENCY (MHz)
PEAK
–
–
TO
–
–
A
VERAGE (dB)
Figure 12. 2
–
–
Carrier W
–
–
CDMA Spectrum
Figure 11. CCDF W
–
-CDMA IQ Magnitude
Clipping, 2
–
-Carrier Test Signal
100
10
10
0
— 1 0
— 2 0
— 3 0
— 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
— 5 0
— 6 0
W
–
–
CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
–
–
ACPR in 3.84 MHz
Integrated BW
0.001
— 7 0
— 8 0
0.0001
0
2
4
6
8
10
12
— 9 0
PEAK
–
–
TO
–
–
A
VERAGE (dB)
–
–
100
Figure 13. CCDF W
–
-CDMA IQ Magnitude
Clipping, Single
–
-Carrier Test Signal
— 9
— 7 . 2
— 5 . 4
— 3 . 6
— 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 14. Single
–
-Carrier W
–
-CDMA Spectrum
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
8
V
= 28 Vdc, I
= 500 mA
,
Pulsed CW, 10
sec(on), 10% Duty Cycle
DD
DQA
Max Output Power
P1dB
P3dB
(W)
113
(1)
f
Z
Z
load
(
)
source
(
)
(MHz)
(dBm)
49.7
50.0
50.0
50.0
(W)
93
(%)
(dBm)
50.5
50.8
50.7
50.7
(%)
D
D
1880
1930
1990
2025
5.35
–
–
j
5.03
7.39
–
–
j
5.10
9.46
–
–
j
1.71
9.30 + j0.80
2.36
–
–
j
4.84
2.57
–
–
j
4.73
2.48
–
–
j
5.11
2.50
–
–
j
5.30
53.7
56.9
56.4
56.7
56.2
59.3
58.6
59.1
100
100
100
119
118
118
(1) Load
impedance for optimum P1dB power.
Z
Z
= Impedance
as measured from gate contact to ground.
= Impedance
as measured from drain contact to ground.
source
load
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 15. Carrier Side Load Pull Performance — Maximum P1dB Tuning
V
= 28 Vdc, I
= 500 mA
,
Pulsed CW, 10
sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
DD
DQA
P3dB
(W)
67
(1)
f
Z
Z
load
source
(
)
(MHz)
(
)
(dBm)
47.6
48.0
48.0
47.9
(W)
57
63
63
61
(%)
(dBm)
48.2
48.6
48.6
48.5
(%)
D
D
1880
1930
1990
2025
5.35
–
–
j
5.03
7.39
–
–
j
5.10
9.46
–
–
j
1.71
9.30 + j0.80
6.91
–
–
j
4.37
6.36
–
–
j
3.60
5.61
–
–
j
3.11
5.28
–
–
j
2.88
64.6
67.3
67.2
66.5
65.2
72
68.3
67.8
67.3
72
70
(1) Load
impedance for optimum P1dB efficiency.
Z
Z
= Impedance
as measured from gate contact to ground.
= Impedance
as measured from drain contact to ground.
source
load
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 16. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
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MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
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MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
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MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, Software and
T
o
ols to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and
T
o
ols, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software &
T
o
ols tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Apr. 2011
Nov. 2013
Initial Release of Data Sheet
Added part number MRF8P20140WGHSR3 (NI
–
–
780GS
–
–
4L), p. 1
T
a
ble 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
Added NI
–
–
780GS
–
–
4L package isometric, p. 1, and Mechanical Outline, pp. 14
–
–
15
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 16
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
16
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Document Number: MRF8P20140WH
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