NXP-Semicon-MRFE6VP61K25NR6
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Document Number: MRFE6VP61K25N
Rev. 2, 4/2015
Freescale Semiconductor
T
e
chnical Data
RF Power LDMOS Transistors
High Ruggedness N
–
–
Channel
MRFE6VP61K25N
MRFE6VP61K25GN
Enhancement
–
–
Mode Lateral MOSFE
T
s
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design allows for wide frequency range use from
1.8 to 600 MHz.
1.8–600 MHz, 1250 W CW, 50 V
WIDEBAND
Typical Performance:
V
DD
= 50 Vdc
RF POWER LDMOS TRANSISTORS
Frequency
(MHz)
P
(W)
G
D
out
ps
Signal Type
(dB)
24.1
23.0
(%)
77.6
72.3
(1,2)
87.5–108
CW
1309 CW
1250 Peak
(3)
230
Pulse
(100
sec, 20% Duty Cycle)
OM
–
-1230
–
-4L
PLASTIC
MRE6VP61K25N
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(3)
230
Pulse
> 65:1 at all
11.5 Peak
(3 dB
50
No Device
Degradation
(100
sec, 20%
Phase Angles
Duty Cycle)
Overdrive)
OM
–
-1230G
–
-4L
PLASTIC
MRE6VP61K25GN
1. Measured
in 87.5–108 MHz broadband reference circuit.
2. The
values shown are the center band performance numbers across the indicated
frequency range.
3. Measured
in 230 MHz narrowband test circuit.
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single
–
–
Ended or in a Push
–
–
Pull Configuration
Qualified up to a Maximum of 50 V
DD
Operation
Characterized from 30 to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Drain A
Drain B
3
4
1
2
Gate A
Gate B
Integrated ESD Protection with Greater Negative Gate
–
–
Source Voltage Range
for Improved Class C Operation
Characterized with Series Equivalent Large
–
–
Signal Impedance Parameters
Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
(
T
o
p View)
Note: Exposed
backside of the package is
the source termina
l
f
or the transistors.
Figure 1. Pin Connections
Typical Applications
Broadcast
Aerospace
– FM broadcast
– VHF omnidirectional range (VOR)
– Weather radar
– HF and VHF broadcast
Industrial, Scientific, Medical (ISM)
– CO
2
laser generation
– Plasma etching
Mobile Radio
– HF and VHF communications
– PMR base stations
– Particle accelerators (synchrotrons)
– MRI
– Industrial heating/welding
Freescale Semiconductor, Inc., 2015. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
C
Drain
–
–
Source Voltage
V
–0.5, +133
–6.0, +10
DSS
Gate
–
–
Source Voltage
V
GS
Storage
T
e
mperature Range
Case Operating
T
e
mperature Range
Operating Junction
T
e
mperature Range
T
stg
–
6
5 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
T
J
C
T
o
tal Device Dissipation @ T
= 25
C
P
3333
W
C
D
Derate above 25
C
16.67
W/
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.06
C/W
JC
CW: Case
T
e
mperature 109
C, 1250 W CW, 50 Vdc, I
= 245 mA, 98 MHz
DQ(A+B)
Thermal Impedance, Junction to Case
Z
0.016
C/W
JC
Pulse: Case
T
e
mperature 74
C, 1250 W Peak, 100
sec Pulse Width, 20% Duty Cycle,
= 100 mA, 230 MHz
I
DQ(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22
–
–
A
1
14)
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
2, passes 2500 V
B, passes 250 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020
3
260
C
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate
–
–
Source Leakage Current
I
—
133
—
—
—
—
—
1
Adc
Vdc
GSS
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
Drain
–
–
Source Breakdown Voltage
(V =
0 Vdc, I
= 100 mAdc)
V
—
10
20
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V =
50 Vdc, V
= 0 Vdc)
I
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V =
100 Vdc, V
= 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V =
10 Vdc, I
= 1776
Adc)
V
V
1.7
1.9
—
2.2
2.4
2.7
2.9
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
50 Vdc, I
= 100 mAdc, Measured in Functional
T
e
st)
D(A+B)
DD
(4)
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 2 Adc)
V
0.2
GS
D
(4)
Forward Transconductance
(V =
10 Vdc, I
= 30 Adc)
g
—
28.0
—
fs
DS
D
1. Continuous
use at maximum temperature will affect MTT
F
.
3. Refer
to
AN1955 –
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.freescale.com/rf
and search AN1955.
4. Each
side of device measured separately.
(continued)
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
C
—
—
—
2.8
185
562
—
—
—
pF
pF
pF
rss
(V =
50 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
GS
(1)
Output Capacitance
C
oss
(V =
50 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
GS
(1)
Input Capacitance
C
iss
(V =
50 Vdc, V
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
DS
GS
(2,3)
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 50 Vdc, I
= 100 mA, P
= 1250 W Peak (250 W Avg.),
DQ(A+B) out
DD
f = 230 MHz, 100
sec Pulse Width, 20% Duty Cycle
Power Gain
G
22.0
68.5
—
23.0
72.3
–13
24.5
—
dB
%
ps
Drain Efficiency
Input Return Loss
D
IRL
–9
dB
Table 6. Load Mismatch/Ruggedness
(In Freescale
T
e
st Fixture, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
230
Pulse
> 65:1 at all
11.5 Peak
50
No Device Degradation
(100
sec, 20% Duty Cycle)
Phase Angles
(3 dB Overdrive)
Table 7. Ordering Information
Device
Tape and Reel Information
Package
MRFE6VP61K25NR6
MRFE6VP61K25GNR6
OM
–
–
1230
–
–
4L
R6 Suffix = 150 Units, 56 mm
T
a
pe Width, 13
–
–
Reel
OM
–
–
1230G
–
–
4L
1. Each
side of device measured separately.
2. Devices
tested without thermal grease.
3. Measurements
made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
1.06
1.05
1.04
1.03
10000
1000
100
10
Measured with
30 mV(rms)ac @ 1 MHz
I
= 100 mA
500 mA
V
= 50 Vdc
DQ(A+B)
DD
V
= 0 Vdc
GS
C
iss
1500 mA
1.02
1.01
1
0.99
0.98
0.97
2000 mA
C
oss
0.96
0.95
0.94
C
rss
1
–50
–25
0
25
50
75
100
0
10
V
20
30
40
50
T ,
CASE TEMPERATURE (
C)
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
C
DS
Note:
Each side of device measured separately.
I
(mA)
Slope (mV/
C)
DQ
100
–2.70
–2.42
–2.22
–2.05
Figure 2. Capacitance versus Drain
–
-Source Voltage
500
1500
2000
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
4
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
C10
C22
C23
C24
C13
C11
C12
C21
COAX1
COAX3
R1
L3
C16
C4
C17
C18
C2
C3
L1
L2
C15
C14
C29
C20
C1
C5
C19
L4
R2
COAX2
C6
COAX4
C25
C9
D63312
C7
C26
C27
C28
MRFE6VP61K25N
Rev. 0
C8
Figure 4. MRFE6VP61K25N Narrowband Test Circuit Component Layout — 230 MHz
Table 8. MRFE6VP61K25N Narrowband Test Circuit Component Designations and Values — 230 MHz
Part
Description
Part Number
Manufacturer
C1
20 pF Chip Capacitor
ATC100B200JT500XT
ATC
ATC
C2, C3, C5
C4
27 pF Chip Capacitors
ATC100B270JT500XT
27291SL
0.8–8.0 pF Variable Capacitor, Gigatrim
22
F
,
3
5 V
T
a
ntalum Capacitors
0.1
F Chip Capacitors
Johanson
Kemet
AVX
C6, C10
C7, C11
C8, C12
T491X226K035AT
CDR33BX104AKWS
C1812C224K5RAC-TU
ATC100B102JT50XT
ATC100B390JT500XT
ATC100C390JT250XT
ATC100B241JT200XT
ATC100B9R1BT500XT
MCGPR63V477M13X26-RH
ATC100C470JT250XT
UT-141C-25
220 nF Chip Capacitors
1000 pF Chip Capacitors
39 pF Chip Capacitor
Kemet
ATC
C9, C13, C21, C25
C14
ATC
C15
39 pF Chip Capacitor
ATC
C16, C17, C18, C19
C20
240 pF Chip Capacitors
9.1 pF Chip Capacitor
ATC
ATC
C22, C23, C24, C26, C27, C28
470
F
,
6
3 V Electrolytic Capacitors
Multicomp
ATC
C29
47 pF Chip Capacitor
Coax1, 2, 3, 4
L1, L2
25
Semi Rigid Coax, 2.2
Shield Length
5 nH Inductors
Micro
–
–
Coax
Coilcraft
Coilcraft
Vishay
MTL
A02TKLC
L3, L4
6.6 nH Inductors
GA3093-ALC
R1, R2
PCB
10
, 1/4 W Chip Resistors
CRCW120610R0JNEA
D63312
Arlon AD255A 0.030
,
= 2.55
r
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
5
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS — 230 MHz
1600
1400
V
= 50 Vdc, f = 230 MHz
DD
Pulse Width = 100
sec, 20% Duty Cycle
1200
1000
800
600
400
200
0
P
= 6 W
P
= 3 W
in
in
0
0.5
1
1.5
2
2.5
3
3.5
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
Figure 6. Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
27
64
60
56
52
48
44
90
80
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
26
Pulse Width = 100
sec, 20% Duty Cycle
Pulse Width = 100
sec, 20% Duty Cycle
70
60
50
40
30
20
10
25
24
23
22
21
20
19
18
I
= 900 mA
DQ(A+B)
600 mA
D
300 mA
100 mA
G
ps
900 mA
600 mA
300 mA
100 mA
0
2000
26
28
30
32
34
36
38
40
42
50
100
1000
P ,
INPUT POWER (dBm)
in
P
, OUTPUT POWER (WATTS) PEAK
out
f
Figure 8. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
230
1295
1518
Figure 7. Output Power versus Input Power
26
25
24
23
22
21
26
90
25
_
C
25
24
23
80
70
60
50
40
30
20
T
= –40
_
C
C
22
21
G
ps
50 V
45 V
85
_
C
–40
_
C
20
19
18
17
16
40 V
35 V
25
_
C
D
85
_
C
20
19
18
V
= 30 V
400
DD
I
= 100 mA, f = 230 MHz
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
Pulse Width = 100
sec, 20% Duty Cycle
DQ(A+B)
DD
DQ(A+B)
Pulse Width = 100
sec, 20% Duty Cycle
10
2000
0
200
600 800 1000
1200 1400
1600
40
100
1000
P
, OUTPUT POWER (WATTS) PEAK
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 10. Power Gain versus Output Power
and Drain
–
-Source Voltage
Figure 9. Power Gain and Drain Efficiency
versus Output Power
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
7
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
Z
Z
load
source
MHz
230
2.10 + j3.70
2.55 + j1.90
Z
Z
=
T
e
st
circuit impedance as measured from
gate to gate, balanced configuration.
source
=
T
e
st
circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
—
50
50
—
+
load
Z
Z
source
Figure 11. Narrowband Series Equivalent Source and Load Impedance — 230 MHz
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
8
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 10. 87.5–108 MHz Broadband Performance
(In Freescale Reference Circuit, 50 ohm system)
V
= 50 Vdc, I
= 250 mA, P
= 5 W, CW
DQ(A+B) in
DD
Frequency
G
D
P
out
ps
(MHz)
87.5
98
(dB)
23.8
24.1
23.6
(%)
78.3
77.6
77.8
(W)
1212
1309
1161
108
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
9
87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.88
5.11
(73.1 mm
130 mm)
C25
C26
C22
C27
C21
C28
C7
C6
C5
L4
R2
R3
L1
C20
C19
C18
C17
C4
L3
R1
C3
C12
C16
Q1
C24
C11
C1
C23*
C15*
C13
C2
L2
C14
C8
MRFE6VP61K25N
D62499
C9
C10
*C15 and C23 are mounted vertically.
0.472
(12)
0.472
(12)
0.196
(5)
0.472
(12)
0.472
(12)
0.669
(17)
Bend Here
0.196
(5)
Inches
(mm)
0.197
(5)
0.197
(5)
Side view
45 degree
L3 total wire length = 2.2
(56 mm)
Figure 12. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit
Component Layout
Figure 13. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit
Component Layout — Bottom
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
10
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 11. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C6, C9, C18, C19,
C20, C21, C22
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C2
22 pF Chip Capacitor
ATC100B220JT500XT
ATC200B103KT50XT
ATC100B471JT200XT
MIN02-002EC101J-F
MIN02-002CC150J-F
ATC100B6R2BT500XT
ATC100B150JT500XT
ATC100B120JT500XT
EEU-FC1J221
ATC
ATC
ATC
CDE
CDE
ATC
ATC
ATC
C4, C5, C8
10000 pF Chip Capacitors
C7, C10, C15, C16, C17, C23
470 pF Chip Capacitors
C11
100 p
F
,
3
00 V Mica
C12
15 p
F
,
3
00 V Mica
C13
6.2 pF Chip Capacitor
C14
15 pF Chip Capacitor
C24
12 pF Chip Capacitor
C25, C26, C27
C28
220
F
,
6
3 V Electrolytic Capacitors
22
F
,
3
5 V Electrolytic Capacitor
17.5 nH Inductors, 6 Turns
Panasonic
Nichicon
Coilcraft
—
UUD1V220MCL1GS
B06TJLC
L1, L2
L3
1.5 mm Non
–
–
T
a
rnish Silver Plated Copper Wire,
SP1500NT-001
T
o
tal Wire Length = 2.2
/56 mm
L4
22 nH Inductor
1212VS-22NMEB
MRFE6VP61K25NR6
CRCW120610R0JNEA
1-2176070-3
Coilcraft
Freescale
Vishay
Q1
RF Power LDMOS Transistor
10
, 1/4 W Chip Resistor
33
, 2 W Chip Resistors
R1
R2, R3
PCB
TE Connectivity
MTL
Arlon TC350 0.030
,
= 3.5
D62499
r
Note: Refer
to MRFE6VP61K25N’s
printed circuit boards and schematics
to download the 87.5–108 MHz heatsink drawing.
MRFE6VP61K25N MRFE6VP61K25GN
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
28
79
78
77
27
26
D
25
24
23
22
21
20
19
76
75
G
P
ps
1400
1300
out
1200
1100
1000
V
= 50 Vdc, P
= 5 W, I
= 250 mA
DD
in
DQ(A+B)
87 89
91 93 95 97 99 101
103 105 107 109
f, FREQUENCY (MHz)
Figure 14. Power Gain, Drain Efficiency and CW Output
Power versus Frequency
29
28
27
26
100
80
60
40
20
0
f = 87.5 MHz
D
98 MHz
108 MHz
87.5 MHz
98 MHz
25
24
23
22
21
20
19
18
G
P
ps
108 MHz
1500
1250
98 MHz
1000
750
out
108 MHz
87.5 MHz
500
250
0
V
l
= 50 Vdc
DD
= 250 mA
DQ(A+B)
17
0
1
2
3
4
5
6
7
8
P ,
INPUT POWER (WATTS)
in
Figure 15. Power Gain, Drain Efficiency and CW Output
Power versus Input Power and Frequency
MRFE6VP61K25N MRFE6VP61K25GN
12
RF Device Data
Freescale Semiconductor, Inc.
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
f = 87.5 MHz
Z =
10
o
Z
source
f = 108 MHz
f = 108 MHz
Z
load
f = 87.5 MHz
f
Z
Z
load
source
MHz
87.5
98
2.10 + j6.67
2.80 + j6.96
3.60 + j6.65
4.11 + j3.87
3.33 + j3.85
2.97 + j4.45
108
Z
Z
=
=
T
e
st circuit impedance as measured from
gate to gate, balanced configuration.
source
T
e
st circuit impedance as measured
load
from drain to drain, balanced configuration.
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
—
50
50
—
+
Z
Z
source
load
Figure 16. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
13
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
F1
87.5 MHz
Fundamental (F1)
175 MHz
–37 dB
H2
H3
262.5 MHz
–30 dB
H4
H3
H4
H2
350 MHz
–42 dB
(262.5 MHz)
(350 MHz)
(175 MHz)
–37 dB
–30 dB
–42 dB
H3
H2
H4
35 MHz
Span: 350 MHz
Center: 228.5 MHz
Figure 17. 87.5 MHz Harmonics @ 1215 W CW
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
14
PACKAGE DIMENSIONS
MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
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MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
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MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
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MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
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MRFE6VP61K25N MRFE6VP61K25GN
RF Device Data
Freescale Semiconductor, Inc.
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MRFE6VP61K25N MRFE6VP61K25GN
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over
–
–
Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
White Paper
RFPLASTICWP: Designing with Plastic RF Power Transistors
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
2. Search
by part number
3. Click
part number link
4. Choose
the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Feb. 2015
Feb. 2015
Initial Release of Data Sheet
T
a
ble 2, Maximum Ratings: added
T
o
tal Device Dissipation, p. 2
T
a
ble 3, Thermal Characteristics: added CW Thermal Resistance, p. 2
Added Fig. 11, Narrowband Series Equivalent Source and Load Impedance
–
–
2
30 MHz, p. 8
2
Apr. 2015
Added part number MRFE6VP61K25GN, p. 1
Added OM
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–
1230G
–
–
4L package photo, p. 1, and Mechanical Outline, pp. 18
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–
20
MRFE6VP61K25N MRFE6VP61K25GN
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RF Device Data
Freescale Semiconductor, Inc.
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2015 Freescale Semiconductor, Inc.
Document Number: MRFE6VP61K25N
Rev. 2, 4/2015
