NXP-Semicon-MRFE6VS25LR5
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Document Number: MRFE6VS25L
Rev. 1, 03/2017
NXP Semiconductors
T
e
chnical Data
RF Power LDMOS Transistor
High Ruggedness N
–
–
Channel
Enhancement
–
–
Mode Lateral MOSFET
MRFE6VS25L
RF power transistor designed for both narrowband and broadband ISM,
broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. This device is fabricated using NXP’s enhanced ruggedness
platform and is suitable for use in applications where high VSWRs are
encountered.
1.8
–
-2000 MHz, 25 W, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Typical Performance:
V
DD
= 50 Vdc
P
(W)
Frequency
(MHz)
G
(dB)
η
(%)
IMD
(dBc)
out
ps
D
Signal Type
(1,3)
1.8
–
–
30
Two
–
–
T
o
ne
(10 kHz spacing)
25 PEP
25.0
50.0
— 2 8
— 3 2
—
(2,3)
30
–
–
512
Two
–
–
T
o
ne
(200 kHz spacing)
25 PEP
25 Peak
17.3
25.9
32.0
74.0
(4)
512
Pulse
(100
μ
sec, 20%
Duty Cycle)
NI
–
-360H
–
-2L
(4)
512
CW
25
26.0
75.0
—
Load Mismatch/Ruggedness
Frequency
P
Test
in
(MHz)
Signal Type
VSWR
(W)
Voltage
Result
(1)
>65:1
at all Phase
Angles
50
No Device
Degradation
30
CW
0.11
(3 dB
Overdrive)
Gate
Drain
1
2
(2)
512
CW
0.95
(3 dB
Overdrive)
(4)
(4)
(
T
o
p View)
512
512
Pulse
(100
μ
sec, 20%
Duty Cycle)
0.14 Peak
(3 dB
Overdrive)
Note: The
backside of the package is the
source terminal for the transistor.
CW
0.14
(3 dB
Figure 1. Pin Connections
Overdrive)
1. Measured
in 1.8
–
–
30 MHz broadband reference circuit.
2. Measured
in 30
–
–
512 MHz broadband reference circuit.
3. The
values shown are the minimum measured performance numbers across the in-
dicated frequency range.
4. Measured
in 512 MHz narrowband test circuit.
Features
•
•
•
•
•
•
Wide operating frequency range
Extreme ruggedness
Unmatched, capable of very broadband operation
Integrated stability enhancements
Low thermal resistance
Extended ESD protection circuit
©
2012, 2017 NXP B.
V
.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
°
C
Drain
–
–
Source Voltage
V
–
–
0.5, +133
–
–
6.0, +10
DSS
Gate
–
–
Source Voltage
V
GS
Storage
T
e
mperature Range
Case Operating
T
e
mperature Range
T
stg
–
–
65 to +150
–
–
40 to +150
–
–
40 to +225
T
C
°
C
(1,2)
Operating Junction
T
e
mperature Range
T
J
°
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
1.4
°
C/W
JC
CW: Case
T
e
mperature 81
°
C, 25 W CW, 50 Vdc, I
= 10 mA, 512 MHz
DQ
Thermal Impedance, Junction to Case
Z
θ
0.32
°
C/W
JC
Pulse: Case
T
e
mperature 77
°
C, 25 W Peak, 100
μ
sec Pulse Width,
20% Duty Cycle, 50 Vdc, I
= 10 mA, 512 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22
–
–
A
1
14)
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
2, passes 2000 V
B, passes 200 V
IV, passes 1200 V
Table 4. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate
–
–
Source Leakage Current
(V =
5 Vdc, V
= 0 Vdc)
I
—
133
—
—
140
—
400
—
2
nAdc
Vdc
GSS
GS
DS
Drain
–
–
Source Breakdown Voltage
(V =
0 Vdc, I
= 50 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V =
50 Vdc, V
= 0 Vdc)
I
μ
Adc
μ
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
—
7
(V =
100 Vdc, V
= 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 85
μ
Adc)
V
V
1.5
2.0
—
2.0
2.4
2.5
3.0
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
50 Vdc, I
= 10 mAdc, Measured in Functional
T
e
st)
DD
D
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 210 mAdc)
V
0.23
GS
D
Dynamic Characteristics
Reverse Transfer Capacitance
(V =
50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
—
—
—
0.17
14.7
39.0
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V =
50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V =
50 Vdc, V
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
DS
GS
1. Continuous
use at maximum temperature will affect MTT
F
.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
(continued)
MRFE6VS25L
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In NXP
T
e
st Fixture, 50 ohm system) V
= 50 Vdc, I
= 10 mA, P
= 25 W Peak (5 W Avg.), f = 512 MHz,
DD
DQ
out
Pulse, 100
μ
sec Pulse Width, 20% Duty Cycle
Power Gain
G
24.5
70.0
—
25.9
74.0
— 1 6
27.5
—
dB
%
ps
D
Drain Efficiency
η
Input Return Loss
IRL
— 1 0
dB
Load Mismatch/Ruggedness
(In NXP
T
e
st Fixture, 50 ohm system) I
= 150 mA
DQ
Frequency
(MHz)
Signal
Type
P
in
(W)
VSWR
Test Voltage, V
Result
DD
512
Pulse
>65:1
0.14 Peak
50
No Device
(100
μ
sec, 20% Duty Cycle)
at all Phase Angles
(3 dB Overdrive)
Degradation
CW
0.14
(3 dB Overdrive)
Table 5. Ordering Information
Device
Tape and Reel Information
R5 Suffix = 50 Units, 32 mm
T
a
pe Width, 13
–
–
inch Reel
Package
MRFE6VS25LR5
NI
–
–
360H
–
–
2L
MRFE6VS25L
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
100
10
1
1.07
C
C
1.06
1.05
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
V
= 50 Vdc
DD
iss
I
= 10 mA
DQ
50 mA
oss
100 mA
150 mA
C
rss
Measured with
±
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc
GS
0.1
— 5 0
–
–
25
0
25
50
75
100
0
10
V
20
30
40
50
T ,
CASE TEMPERATURE (
°
C)
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
C
DS
Figure 2. Capacitance versus Drain
–
-Source Voltage
I
(mA)
Slope (mV/
°
C)
DQ
10
50
–
–
2.16
–
–
1.79
–
–
1.76
–
–
1.68
100
150
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
8
10
V
= 50 Vdc
DD
I
D
= 0.55 Amps
7
10
10
0.69 Amps
6
0.83 Amps
5
10
10
4
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
°
C)
J
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
NOTE
:
For pulse applications or CW conditions, use the MTTF
calculator referenced above.
Figure 4. MTTF versus Junction Temperature
–
– CW
MRFE6VS25L
RF Device Data
NXP Semiconductors
4
512 MHz NARROWBAND PRODUCTION TEST FIXTURE
C1
C2
C9
C10
L3
B2
C3
B1
C4
L1
C14
C5
C12
L2
C13
C8
C15
C6
C11
C7
MRFE6VS25L
Rev. 3
Figure 5. MRFE6VS25L Narrowband Test Circuit Component Layout — 512 MHz
Table 6. MRFE6VS25L Narrowband Test Circuit Component Designations and Values — 512 MHz
Part
Description
Part Number
Manufacturer
Fair-Rite
B1, B2
C1
Long Ferrite Beads
2743021447
22
μ
F
,
3
5 V
T
a
ntalum Capacitor
0.1
μ
F Chip Capacitors
0.01
μ
F Chip Capacitors
180 pF Chip Capacitors
18 pF Chip Capacitor
2.7 pF Chip Capacitor
15 pF Chip Capacitor
36 pF Chip Capacitor
4.3 pF Chip Capacitor
13 pF Chip Capacitor
470
μ
F
,
6
3 V Electrolytic Capacitor
33 nH Inductor
T491X226K035AT
CDR33BX104AKWS
C0805C103K5RAC
ATC100B181JT500XT
ATC100B180JT500XT
ATC100B2R7BT500XT
ATC100B150JT500XT
ATC100B360JT500XT
ATC100B4R3CT500XT
ATC100B130JT500XT
MCGPR63V477M13X26-RH
1812SMS-33NJLC
A04TJLC
Kemet
AVX
C2, C9
C3, C10
C4, C12, C15
C5
Kemet
ATC
ATC
C6
ATC
C7
ATC
C8
ATC
C11
ATC
C13
ATC
C14
Multicomp
Coilcraft
Coilcraft
Coilcraft
Arlon
L1
L2
12.5 nH Inductor
L3
82 nH Inductor
1812SMS-82NJLC
AD255A
PCB
0.030
″
,
ε
= 2.55
r
MRFE6VS25L
RF Device Data
NXP Semiconductors
5
L3
B2
V
SUPPLY
B1
+
C12
V
BIAS
C9
C10
C14
+
C1
C2
C3
C4
L2
L1
RF
OUTPUT
Z11
Z12
Z13 Z14 Z15 Z16
Z17 Z18
Z19
RF
INPUT
C15
Z1
Z2
Z3 Z4 Z5
Z6 Z7
Z8
Z9 Z10
C11
C13
C5
DUT
C6
C7
C8
Figure 6. MRFE6VS25L Narrowband Test Circuit Schematic — 512 MHz
Table 7. MRFE6VS25L Narrowband Test Circuit Microstrips — 512 MHz
Microstrip
Description
Microstrip
Description
Z1
0.235
″ ×
0.082
″
Microstrip
0.042
″ ×
0.082
″
Microstrip
0.682
″ ×
0.082
″
Microstrip
0.200
″ ×
0.060
″
Microstrip
0.324
″ ×
0.060
″
Microstrip
0.200
″ ×
0.060
″
Microstrip
0.089
″ ×
0.082
″
Microstrip
0.120
″ ×
0.082
″
Microstrip
0.411
″ ×
0.082
″
Microstrip
0.260
″ ×
0.270
″
Microstrip
Z11
0.475
″ ×
0.270
″
Microstrip
0.091
″ ×
0.082
″
Microstrip
0.170
″ ×
0.082
″
Microstrip
0.670
″ ×
0.082
″
Microstrip
0.280
″ ×
0.082
″
Microstrip
0.413
″ ×
0.082
″
Microstrip
0.259
″ ×
0.082
″
Microstrip
0.761
″ ×
0.082
″
Microstrip
0.341
″ ×
0.082
″
Microstrip
Z2
Z12
Z13
Z14*
Z15
Z16*
Z17*
Z18
Z19
Z3
Z4*
Z5
Z6*
Z7
Z8
Z9
Z10
* Line length includes microstrip bends
MRFE6VS25L
RF Device Data
NXP Semiconductors
6
TYPICAL CHARACTERISTICS — 512 MHz
32
28
24
20
16
12
8
V
= 50 Vdc, f = 512 MHz
DD
P =
0.035 W
in
P
= 0.07 W
in
4
0
0.5
1.5
2.5
0
1
2
3
3.5
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
Figure 7. CW Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
46
44
42
40
38
36
34
32
30
90
80
70
60
V
= 50 Vdc, f = 512 MHz
50 mA
DD
V
= 50 Vdc
= 10 mA
10 mA
DD
29
28
27
I
DQ
η
D
I
= 150 mA
DQ
f = 512 MHz
100 mA
150 mA
100 mA
50 mA
G
ps
26
25
24
23
50
40
30
20
10 mA
2
10
, OUTPUT POWER (WATTS)
50
10
14
16
18
20
22
12
P
P ,
INPUT POWER (dBm)
in
out
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power and Quiescent Current
f
P1dB
(W)
P3dB
(W)
(MHz)
512
28.7
31.6
Figure 8. CW Output Power versus Input Power
90
80
70
60
50
40
30
20
10
29
28
27
26
25
24
23
22
21
28
27
26
25
24
23
V
= 50 Vdc
= 10 mA
DD
— 4 0
_
C
η
D
I
DQ
f = 512 MHz
25
_
C
85
_
C
50 V
45 V
G
ps
22
21
20
19
T
=
–
–
40
_
C
40 V
C
35 V
25
_
C
85
_
C
30 V
I
= 10 mA, f = 512 MHz
Pulse Width = 100
μ
sec
25 V
18
17
16
DQ
V
= 20 V
10
20% Duty Cycle
DD
1
10
, OUTPUT POWER (WATTS)
50
0
5
15
20
25
30
35
P
, OUTPUT POWER (WATTS) PEAK
P
out
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
and Drain
–
-Source Voltage
MRFE6VS25L
RF Device Data
NXP Semiconductors
7
512 MHz NARROWBAND PRODUCTION TEST FIXTURE
V
= 50 Vdc, I
= 10 mA, P
= 25 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
512
0.72 + j10.8
8.8 + j17.5
Z
Z
=
T
e
st
circuit impedance as measured from
gate to ground.
source
=
T
e
st
circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50
Ω
50
Ω
Z
Z
load
source
Figure 12. Narrowband Series Equivalent Source and Load Impedance — 512 MHz
MRFE6VS25L
RF Device Data
NXP Semiconductors
8
1.8
–
-30 MHz HF BROADBAND REFERENCE CIRCUIT
Table 8. 1.8
–
-30 MHz HF Broadband Performance
(In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I
= 100 mA
DD
DQ
P
f
G
η
D
IMD
out
ps
Signal Type
(W)
(MHz)
(dB)
25.8
25.9
25.0
(%)
51.5
50.4
50.7
(dBc)
Two-
T
o
ne
(10 kHz spacing)
25 PEP
1.8
10
30
–
–
28.7
–
–
33.9
–
–
31.1
Table 9. Load Mismatch/Ruggedness
(In NXP Reference Circuit)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
30
CW
>65:1
at all Phase
Angles
0.11
(3 dB Overdrive)
50
No Device
Degradation
MRFE6VS25L
RF Device Data
NXP Semiconductors
9
1.8
–
-30 MHz HF BROADBAND REFERENCE CIRCUIT
C2
C8
C5
C7
C6
C3 C4
R1
+
L1, E1
C10
C9
C1*
L2, E2
C11*
Q1
MRFE6VS25L/N
Rev. 0
*C1 and C11 are mounted vertically.
Figure 13. MRFE6VS25L HF Broadband Reference Circuit Component Layout — 1.8
–
-30 MHz
Table 10. MRFE6VS25L HF Broadband Reference Circuit Component Designations and Values — 1.8
–
-30 MHz
Part
Description
Part Number
Manufacturer
C1, C5, C6, C9, C11
20K pF Chip Capacitors
ATC200B203KT50XT
ATC
C2
C3
C4
C7
C8
C10
E1
10
μ
F
,
3
5 V
T
a
ntalum Capacitor
0.1
μ
F Chip Capacitor
T491D106K035AT
Kemet
AVX
CDR33BX104AKWY
C3225X7R1H225KT
GRM319R72A104KA01D
G2225X7R225KT3AB
2.2
μ
F Chip Capacitor
TDK
0.1
μ
F Chip Capacitor
Murata
ATC
2.2
μ
F Chip Capacitor
220
μ
F
,
1
00 V Electrolytic Capacitor
#43 Ferrite
T
o
roid
MCGPR100V227M16X26-RH Multicomp
5943001101
Fair
–
–
Rite
Fair
–
–
Rite
Belden
Belden
NXP
E2
#61 Ferrite
T
o
roid
5961001101
L1
4 Turns, 22 AWG,
T
o
roid Transformer with Ferrite E1
26 Turns, 22 AWG,
T
o
roid Transformer with Ferrite E2
RF Power LDMOS Transistor
1 k
Ω
, 3 W Chip Resistor
8077 Copper Magnetic Wire
8077 Copper Magnetic Wire
MRFE6VS25L
L2
Q1
R1
PCB
CPF31K0000FKE14
S1000
Vishay
0.030
″
,
ε
= 4.8
Shenzhen Multilayer
PCB
T
e
chnology
r
MRFE6VS25L
RF Device Data
NXP Semiconductors
10
Z4
Z3
R1
L1, E1
V
BIAS
+
C2
C3
C4
C5
V
SUPPLY
Z8
+
C6 C7
C8
C10
C9
Z7
L2, E2
RF
OUTPUT
Z6
Z9
Z10
RF
INPUT
Z1
Z2
Z5
C11
C1
DUT
Figure 14. MRFE6VS25L HF Broadband Reference Circuit Schematic — 1.8
–
-30 MHz
Table 11. MRFE6VS25L HF Broadband Reference Circuit Microstrips — 1.8
–
-30 MHz
Microstrip
Description
Microstrip
Description
Z1
Z2
Z3
Z4
Z5
0.141
″ ×
0.047
″
Microstrip
0.625
″ ×
0.047
″
Microstrip
0.119
″ ×
0.219
″
Microstrip
0.422
″ ×
0.241
″
Microstrip
0.469
″ ×
0.263
″
Microstrip
Z6
Z7
Z8
Z9
Z10
0.469
″ ×
0.263
″
Microstrip
0.119
″ ×
0.063
″
Microstrip
0.422
″ ×
0.241
″
Microstrip
0.625
″ ×
0.047
″
Microstrip
0.141
″ ×
0.047
″
Microstrip
MRFE6VS25L
RF Device Data
NXP Semiconductors
11
TYPICAL CHARACTERISTICS — 1.8
–
-30 MHz
HF BROADBAND REFERENCE CIRCUIT
30
130
120
110
100
90
V
DQ
= 50 Vdc, P
= 0.15 W
in
DD
28
26
24
I
= 25 mA
G
ps
22
20
18
16
14
12
10
8
80
70
η
D
60
40
30
20
P
out
10
6
0
0
5
10
15
20
25
30
35
f, FREQUENCY (MHz)
Figure 15. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
40
30
35
V
P
= 50 Vdc
DD
in
V
P
= 50 Vdc
DD
in
30
25
20
15
10
5
= 0.1 W
f = 10 MHz
= 0.05 W
1.8 MHz
f = 10 MHz
1.8 MHz
20
10
0
30 MHz
30 MHz
0
0
1
2
3
4
0
1
2
3
V ,
GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
4
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
Figure 16. CW Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
Figure 17. CW Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
MRFE6VS25L
RF Device Data
NXP Semiconductors
12
TYPICAL CHARACTERISTICS — 1.8
–
-30 MHz
HF BROADBAND REFERENCE CIRCUIT
48
44
V
DQ
= 50 Vdc
DD
I
= 25 mA
f = 10 MHz
1.8 MHz
40
36
30 MHz
32
8
12
16
20
24
P ,
INPUT POWER (dBm)
in
f
P1dB
P3dB
(W)
(MHz)
(W)
21.9
24.0
23.9
1.8
26.4
28.4
29.1
10
30
Figure 18. CW Output Power versus Input Power
30
28
26
24
75
65
55
45
35
25
15
10 MHz
30 MHz
f = 1.8 MHz
V
I
= 50 Vdc
= 25 mA
DD
DQ
1.8 MHz
10 MHz
30 MHz
22
20
18
G
ps
η
D
1
10
, OUTPUT POWER (WATTS)
100
P
out
Figure 19. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6VS25L
RF Device Data
NXP Semiconductors
13
TYPICAL CHARACTERISTICS — 1.8
–
-30 MHz
HF BROADBAND REFERENCE CIRCUIT — TWO
–
-TONE
(1)
— 2 0
— 2 5
— 3 0
— 2 0
V
= 50 Vdc, I
= 100 mA
V
= 50 Vdc, I
= 100 mA
DD DQ
— 2 5
— 3 0
DD
DQ
f1 = 1.795 MHz, f2 = 1.805 MHz
Two
–
–
T
one Measurements
f1 = 9.995 MHz, f2 = 10.005 MHz
Two
–
–
T
one Measurements
— 3 5
— 4 0
— 3 5
— 4 0
— 4 5
— 5 0
— 5 5
— 6 0
— 6 5
— 7 0
— 4 5
— 5 0
— 5 5
— 6 0
— 6 5
— 7 0
3rd Order
5th Order
3rd Order
5th Order
7th Order
7th Order
2
10
, OUTPUT POWER (WATTS) PEP
30
2
10
P ,
OUTPUT POWER (WATTS) PEP
out
30
P
out
Figure 20. Intermodulation Distortion
Figure 21. Intermodulation Distortion
Products versus Output Power — 1.8 MHz
Products versus Output Power — 10 MHz
— 2 0
V
= 50 Vdc, I
= 100 mA
DQ
— 2 5
— 3 0
DD
f1 = 29.995 MHz, f2 = 30.005 MHz
Two
–
–
T
one Measurements
— 3 5
— 4 0
3rd Order
— 4 5
— 5 0
— 5 5
— 6 0
— 6 5
— 7 0
5th Order
7th Order
2
10
, OUTPUT POWER (WATTS) PEP
30
P
out
Figure 22. Intermodulation Distortion
Products versus Output Power — 30 MHz
1. The
distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 dB above the power in a single tone.
MRFE6VS25L
RF Device Data
NXP Semiconductors
14
1.8
–
-30 MHz HF BROADBAND REFERENCE CIRCUIT
Z =
50
Ω
o
f = 1.8 MHz
Z
source
f = 1.8 MHz
f = 30 MHz
Z
load
f = 30 MHz
V
= 50 Vdc, I
= 25 mA, P
= 25 W CW
DQ out
DD
f
Z
Z
load
source
MHz
1.8
5
Ω
Ω
42.4 + j9.5
44.3 + j3.0
44.2 + j0.4
44.4 – j0.5
44.6 – j1.3
44.8 – j2.0
44.9 – j2.5
47.1 – j1.6
46.8 – j1.2
47.2 – j2.1
47.5 – j3.2
47.7 – j4.3
47.8 – j5.2
47.7 – j6.1
10
15
20
25
30
Z
Z
=
T
e
st
circuit impedance as measured from
gate to ground.
source
=
T
e
st
circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50
Ω
50
Ω
Z
Z
load
source
Figure 23. HF Broadband Series Equivalent Source and Load Impedance — 1.8
–
-30 MHz
MRFE6VS25L
RF Device Data
NXP Semiconductors
15
30
–
-512 MHz BROADBAND REFERENCE CIRCUIT
Table 12. 30
–
-512 MHz Broadband Performance
(In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I
= 100 mA
DD
DQ
P
f
G
η
D
IMD
out
ps
Signal Type
(W)
(MHz)
(dB)
20.9
19.0
17.3
(%)
34.2
38.2
32.0
(dBc)
Two-
T
o
ne
(200 kHz spacing)
25 PEP
30
–
–
32.3
–
–
31.5
–
–
36.1
100
512
Table 13. Load Mismatch/Ruggedness
(In NXP Reference Circuit)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
512
CW
>65:1
at all Phase
Angles
0.95
(3 dB Overdrive)
50
No Device
Degradation
MRFE6VS25L
16
RF Device Data
NXP Semiconductors
30
–
-512 MHz BROADBAND REFERENCE TEST FIXTURE
D1
C10
C9
C11
E3
E2, L2
C8
R3
R1
T2
C5 C6
C7
L1
R2
C2
C4
Q1
C3
C1
E4
E1
T1
T3
MRFE6VS25L/N
Rev. 0
Note: See
Figure 24a for a more detailed view of the semi
–
–
flex cables with shields and #61 multi
–
–
aperture cores.
Figure 24. MRFE6VS25L Broadband Reference Circuit Component Layout — 30
–
-512 MHz
Table 14. MRFE6VS25L Broadband Reference Circuit Component Designations and Values — 30
–
-512 MHz
Part
Description
Part Number
ATC100B102JT50XT
ATC100B2R7BT500XT
C3225CH2A153JT
GRM3195C1E103JA01
C3225JB2A105KT
MCGPR100V227M16X26-RH
1N4738A
Manufacturer
C1, C3, C6, C7, C8
1,000 pF Chip Capacitors
ATC
ATC
TDK
C2
2.7 pF Chip Capacitor
15 nF Chip Capacitor
10 nF Chip Capacitors
1
μ
F Chip Capacitor
C4
C5, C9
C10
C11
D1
Murata
TDK
220
μ
F
,
1
00 V Electrolytic Capacitor
8.2 V, 1 W Zener Diode
#61 Multi-aperture Cores
Ferrite Core Bead
Multicomp
Fairchild Semiconductor
Fair-Rite
E1, E3, E4
E2
2861001502
21-201-J
Ferronics
Coilcraft
L1
47 nH Inductor
1812SMS-47NJLC
8076 Copper Magnetic Wire
L2
4 Turns, 20 AWG,
T
o
roid Transformer with
Ferrite E2
Belden
Q1
RF Power LDMOS Transistor
MRFE6VS25L
NXP
R1
5.6 K
Ω
, 1/4 W Chip Resistor
CRCW12065K60FKEA
CRCW120615R0FKEA
3224W-1-502E
Vishay
Vishay
Bourns
Microdot
Microdot
Arlon
R2
15
Ω
, 1/4 W Chip Resistor
R3
5 k
Ω
Potentiometer CMS Cermet Multi
–
–
turn
25
Ω
Semi-flex Cable, 0.945
″
Shield Length
25
Ω
Semi-flex Cables, 1.340
″
Shield Length
T1
D260-4118-0000
D260-4118-0000
TC350
T2, T3
PCB
0.030
″
,
ε
= 3.5
r
MRFE6VS25L
RF Device Data
NXP Semiconductors
17
Center conductor
connection to PCB
T2
E3
C2
Shield connection
to PCB
C3
C4
E1
T2
E3
E4
S
S
S
T1
Z12
T3
E1
S
S
T1
E4
T3
S
NOT TO SCALE
S = Shield
Figure 24a. Detailed View of Semi
–
-flex Cables with Shields and #61 Multi
–
-aperture Cores
V
SUPPLY
+
R1
C8
C9
C10 C11
L1
L2, E2
D1
R3
C5 C6
T2
C7
E3
Z8
R2
Z9
Z10
RF
OUTPUT
Z12
T3
Z11
Z14 Z15 Z16
E4
RF
INPUT
Z1 Z2
Z3
Z4
Z6
Z7
T1
C4
Z13
E1
C1
C3
DUT
C2
Z5
Figure 25. MRFE6VS25L Broadband Reference Circuit Schematic — 30
–
-512 MHz
Table 15. MRFE6VS25L Broadband Reference Circuit Microstrips — 30
–
-512 MHz
Microstrip
Description
Microstrip
Description
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.180
″ ×
0.080
″
Microstrip
0.080
″ ×
0.190
″
Microstrip
0.230
″ ×
0.190
″
Microstrip
0.150
″ ×
0.190
″
Microstrip
0.180
″ ×
0.190
″
Microstrip
0.220
″ ×
0.190
″
Microstrip
0.230
″ ×
0.260
″
Microstrip
0.140
″ ×
0.150
″
Microstrip
Z9
0.080
″ ×
0.310
″
Microstrip
0.260
″ ×
0.260
″
Microstrip
0.140
″ ×
0.190
″
Microstrip
0.170
″ ×
0.080
″
Microstrip
0.210
″ ×
0.060
″
Microstrip
0.420
″ ×
0.190
″
Microstrip
0.070
″ ×
0.140
″
Microstrip
0.190
″ ×
0.080
″
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
MRFE6VS25L
RF Device Data
NXP Semiconductors
18
TYPICAL CHARACTERISTICS — 30
–
-512 MHz
BROADBAND REFERENCE CIRCUIT
24
120
V
DQ
= 50 Vdc, P
= 0.8 W
in
DD
110
100
22
20
I
= 25 mA
90
18
G
ps
16
14
12
80
70
60
50
40
10
η
D
8
6
4
2
0
30
20
P
out
10
0
0
50 100 150 200 250 300 350 400 450 500
550
f, FREQUENCY (MHz)
Figure 26. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
50
40
30
20
40
V
P
= 50 Vdc
DD
in
V
P
= 50 Vdc
DD
in
f = 30 MHz
= 0.65 W
f = 30 MHz
= 0.325 W
100 MHz
30
20
10
0
512 MHz
100 MHz
512 MHz
10
0
0
1
2
3
4
0
1
2
3
4
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
V ,
GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
GS
Figure 27. CW Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
Figure 28. CW Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
MRFE6VS25L
RF Device Data
NXP Semiconductors
19
TYPICAL CHARACTERISTICS — 30
–
-512 MHz
BROADBAND REFERENCE CIRCUIT
48
100 MHz
f = 30 MHz
512 MHz
44
40
36
32
28
V
DQ
= 50 Vdc
DD
I
= 25 mA
16
20
24
28
32
36
P ,
INPUT POWER (dBm)
in
f
P1dB
(W)
P3dB
(W)
(MHz)
30
33.4
35.6
32.7
40.2
44.6
37.7
100
512
Figure 29. CW Output Power versus Input Power
24
22
20
18
70
60
f = 512 MHz
V
= 50 Vdc
= 25 mA
DD
I
DQ
100 MHz
30 MHz
50
40
30 MHz
100 MHz
512 MHz
16
14
12
30
G
ps
20
10
0
η
D
10
1
10
100
P
, OUTPUT POWER (WATTS)
out
Figure 30. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6VS25L
RF Device Data
NXP Semiconductors
20
TYPICAL CHARACTERISTICS — 30
–
-512 MHz
BROADBAND REFERENCE CIRCUIT — TWO
–
-TONE
(1)
— 2 0
— 3 0
— 4 0
— 5 0
— 6 0
— 7 0
— 8 0
— 2 0
3rd Order
3rd Order
— 3 0
— 4 0
— 5 0
— 6 0
— 7 0
— 8 0
5th Order
7th Order
5th Order
7th Order
V
= 50 Vdc, I
= 100 mA
DQ
V
= 50 Vdc, I
= 100 mA
DQ
DD
DD
f1 = 29.9 MHz, f2 = 30.1 MHz
Two
–
–
T
one Measurements
f1 = 99.9 MHz, f2 = 100.1 MHz
Two
–
–
T
one Measurements
1
10
40
1
10
40
P
, OUTPUT POWER (WATTS) PEP
P
, OUTPUT POWER (WATTS) PEP
out
out
Figure 31. Intermodulation Distortion
Figure 32. Intermodulation Distortion
Products versus Output Power — 30 MHz
Products versus Output Power — 100 MHz
— 2 0
— 2 6
3rd Order
— 3 2
— 3 8
— 4 4
— 5 0
— 5 6
— 6 2
— 6 8
— 7 4
— 8 0
5th Order
7th Order
V
= 50 Vdc, I
= 100 mA
DQ
DD
f1 = 511.9 MHz, f2 = 512.1 MHz
Two
–
–
T
one Measurements
1
10
40
P
, OUTPUT POWER (WATTS) PEP
out
Figure 33. Intermodulation Distortion
Products versus Output Power — 512 MHz
1. The
distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 dB above the power in a single tone.
MRFE6VS25L
RF Device Data
NXP Semiconductors
21
30
–
-512 MHz BROADBAND REFERENCE CIRCUIT
Z =
25
Ω
o
f = 30 MHz
f = 512 MHz
f = 512 MHz
Z
load
Z
source
f = 30 MHz
V
= 50 Vdc, I
= 25 mA, P
= 25 W CW
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
30
7.2 – j0.6
8.2 – j1.7
8.9 + j1.9
9.2 + j2.2
9.2 + j2.2
9.4 + j2.4
9.3 + j1.9
9.8 + j2.2
8.9 + j2.1
7.8 + j3.5
7.0 + j3.1
6.7 + j5.0
15.4 + j8.1
18.1 + j5.4
19.0 + j3.9
19.3 + j3.9
19.4 + j4.0
19.8 + j4.1
19.1 + j2.8
20.0 + j2.6
18.6 + j2.0
19.2 + j2.6
19.2 + j3.5
20.5 + j5.3
64
88
98
100
108
144
170
230
352
450
512
Z
Z
=
T
e
st
circuit impedance as measured from
gate to ground.
source
=
T
e
st
circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50
Ω
50
Ω
Z
Z
load
source
Figure 34. Broadband Series Equivalent Source and Load Impedance — 30
–
-512
MHz
MRFE6VS25L
RF Device Data
NXP Semiconductors
22
PACKAGE DIMENSIONS
MRFE6VS25L
RF Device Data
NXP Semiconductors
23
MRFE6VS25L
RF Device Data
NXP Semiconductors
24
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
•
•
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
•
Printed Circuit Boards
For Software and
T
o
ols, do a Part Number search at
http://www.nxp.com
, and select the “Part Number” link. Go to the
Software &
T
o
ols tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Oct. 2012
Mar. 2017
•
Initial Release of Data Sheet
•
•
Figure 1 Pin Connections: corrected Drain (Pin 1) and Gate (Pin 2) to reflect correct pin numbers, p. 1
T
a
ble 14, 30
–
–
512 MHz Broadband Reference Circuit Component Designations and Values: added Q1 to
parts list, p. 17
MRFE6VS25L
25
RF Device Data
NXP Semiconductors
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us:
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NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address:
nxp.com/Sales
T
e
rmsandConditions
.
NX
P
,
t
he NXP logo, Freescale, and the Freescale logo are trademarks of NXP B.
V
.
All other product or service names are the property of their respective owners.
E
2012, 2017 NXP B.
V
.
Document Number: MRFE6VS25L
Rev. 1, 03/2017
