NXP-Semicon-MRFX035HR5
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Document Number: MRFX035H
Rev. 0, 12/2018
NXP Semiconductors
T
e
chnical Data
RF Power LDMOS Transistor
High Ruggedness N
–
–
Channel
Enhancement
–
–
Mode Lateral MOSFET
MRFX035H
This high ruggedness device is designed for use in high VSWR industrial,
medical, broadcast, aerospace and mobile radio applications. Its unmatched
input and output design supports frequency use from 1.8 to 512 MHz.
1.8–512 MHz, 35 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Typical Performance:
V
DD
= 65 Vdc
P
(W)
Frequency
(MHz)
G
(dB)
D
(%)
out
ps
Signal Type
(1,2)
1.8–54
CW
CW
CW
32 CW
26 CW
35 CW
24.1
15.1
24.8
58.1
42.3
75.8
(2)
30–400
(3)
230
Load Mismatch/Ruggedness
Frequency
P
Test
in
(MHz)
Signal Type
VSWR
(dBm)
Voltage
Result
NI
–
-360H
–
-2SB
(3)
230
CW
> 65:1
at all Phase
Angles
23.5
(3 dB
Overdrive)
65
No Device
Degradation
1. Measured
in 1.8–54 MHz broadband reference circuit (page 5).
2. The
values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured
in 230 MHz production test fixture (page 10).
Gate
Drain
1
2
Features
Unmatched input and output allowing wide frequency range utilization
50 ohm native output impedance
Qualified up to a maximum of 65 V
DD
operation
Characterized from 30 to 65 V for extended power range
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
(
T
o
p View)
Note: The
backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Integrated ESD protection with greater negative gate
–
–
source voltage
range for improved Class C operation
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
Mobile radio
– HF and VHF communications
– PMR base stations
2018 NXP B.
V
.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
C
Drain
–
–
Source Voltage
V
–0.5, +179
–6.0, +10
DSS
Gate
–
–
Source Voltage
V
GS
Storage
T
e
mperature Range
Case Operating
T
e
mperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction
T
e
mperature Range
T
J
C
T
o
tal Device Dissipation @ T
= 25
C
P
154
W
C
D
Derate above 25
C
0.769
W/
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
1.3
C/W
JC
CW: Case
T
e
mperature 74.2
C, 35 W CW, 65 Vdc, I
= 15 mA, 230 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS
–
–
001
–
–
2017)
Charge Device Model (per JS
–
–
002
–
–
2014)
2, passes 2500 V
C3, passes 1200 V
Table 4. Electrical Characteristics
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate
–
–
Source Leakage Current
(V =
5 Vdc, V
= 0 Vdc)
I
—
179
—
—
193
—
400
—
nAdc
Vdc
GSS
GS
DS
Drain
–
–
Source Breakdown Voltage
(V =
0 Vdc, I
= 250
Adc)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V =
65 Vdc, V
= 0 Vdc)
I
10
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
—
300
(V =
179 Vdc, V
= 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 640
Adc)
V
V
1.7
2.5
—
2.75
3.0
3.0
3.5
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
65 Vdc, I
= 15 mAdc, Measured in Functional
T
e
st)
DD
D
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 100 mAdc)
V
0.17
GS
D
Dynamic Characteristics
Reverse Transfer Capacitance
(V =
65 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
—
—
—
0.13
13.7
42.8
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V =
65 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V =
65 Vdc, V
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
DS
GS
1. Continuous
use at maximum temperature will affect MTT
F
.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
(continued)
MRFX035H
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics
(T =
25
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In NXP Production
T
e
st Fixture, 50 ohm system) V
= 65 Vdc, I
= 15 mA, P
= 35 W CW, f = 230 MHz
DD
DQ
out
Power Gain
G
23.5
72.0
—
24.8
75.8
–16
26.5
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
IRL
–11
dB
Load Mismatch/Ruggedness
(In NXP Production
T
e
st Fixture, 50 ohm system) I
= 15 mA
DQ
Frequency
(MHz)
Signal
Type
P
in
(dBm)
VSWR
Test Voltage, V
Result
DD
230
CW
> 65:1
23.5
65
No Device
at all Phase Angles
(3 dB Overdrive)
Degradation
Table 5. Ordering Information
Device
Tape and Reel Information
Package
NI
–
–
360H
–
–
2SB
MRFX035HR5
R5 Suffix = 50 Units, 32 mm
T
a
pe Width, 13
–
–
inch Reel
MRFX035H
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
200
100
1.06
Measured with
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc
GS
V
= 65 Vdc
DD
100 mA
C
C
iss
1.04
1.02
I
= 15 mA
DQ
oss
300 mA
10
1
200 mA
500 mA
1
0.98
0.96
0.94
C
rss
0.1
0
10
20
30
40
50
60
70
–50
–25
0
25
50
75
100
V
, DRAIN
–
–
SOURCE VOLTAGE (VOLTS)
T ,
CASE TEMPERATURE (
C)
C
DS
I
(mA)
Slope (mV/
C)
–2.88
Figure 2. Capacitance versus Drain
–
-Source Voltage
DQ
15
100
200
300
500
–2.32
–2.16
–1.76
–1.36
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
9
10
V
= 65 Vdc
DD
I
D
= 0.56 Amps
8
7
6
5
10
10
10
10
I =
0.73 Amps
D
I =
0.89 Amps
D
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
C)
J
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature — CW
MRFX035H
RF Device Data
NXP Semiconductors
4
1.8–54 MHz BROADBAND REFERENCE CIRCUIT — 2.0
3.0
(5.1 cm
7.6 cm)
Table 6. 1.8–54 MHz HF Broadband Performance
(In NXP Reference Circuit, 50 ohm system)
V
= 65 Vdc, I
= 25 mA, P
= 22 dBm, CW
DD
DQ in
Frequency
(MHz)
P
G
D
out
ps
(W)
39
42
43
32
(dB)
24.9
25.2
25.3
24.1
(%)
65.7
69.3
70.3
58.1
1.8
7.2
14.2
54
MRFX035H
RF Device Data
NXP Semiconductors
5
1.8–54 MHz BROADBAND REFERENCE CIRCUIT — 2.0
3.0
(5.1 cm
7.6 cm)
C2
C8
C3 C4 C5
C6 C7
R1
C10
L1, E1
C9
R2
C11
C1
Q1
D115353
Rev. 0
aaa
–
-031941
Figure 5. MRFX035H Broadband Reference Circuit Component Layout — 1.8–54 MHz
Table 7. MRFX035H Broadband Reference Circuit Component Designations and Values — 1.8–54 MHz
Part
Description
22 nF Chip Capacitor
Part Number
Manufacturer
TDK
C1, C5, C6, C9, C11
C3216NP02A223J160AA
C2
C3
C4
C7
C8
C10
E1
L1
10
F
,
3
5 V
T
a
ntalum Capacitor
0.1
F Chip Capacitor
T491D106K035AT
Kemet
Kemet
TDK
C1206C104K1RACTU
C3225X7R1H225K
C3216C0G2A104J160AE
G2225X7R225KT3AB
MCGPR100V227M16X26
5961001101
2.2
F Chip Capacitor
0.1
F Chip Capacitor
TDK
2.2
F Chip Capacitor
ATC
220
F
,
1
00 V Electrolytic Capacitor
61 Ferrite
T
o
roid
Multicomp
Fair-Rite
T
e
mco
NXP
26 Turns, 23 AWG,
T
o
roid Transformer with Ferrite E1
RF Power LDMOS Transistor
1 k
, 3 W Axial Leaded Resistor
330
, 1 W Chip Resistor
MW0454 Copper Magnet Wire
MRFX035H
Q1
R1
R2
CPF31K0000FKE14
RMCF2512JT330R
Vishay
Stackpole
Electronics
PCB
FR4 0.30
,
= 4.8, 1 oz. Copper
D115353
MTL
r
MRFX035H
RF Device Data
NXP Semiconductors
6
TYPICAL CHARACTERISTICS — 1.8–54 MHz
BROADBAND REFERENCE CIRCUIT
29
28
75
70
65
60
55
50
45
40
35
30
D
27
26
G
ps
25
24
23
22
21
20
P
out
V
= 65 Vdc, P
= 22 dBm, l
= 25 mA, CW
in DQ
DD
0
10
20
30
40
50
60
f, FREQUENCY (MHz)
Figure 6. Power Gain, Drain Efficiency and CW Output Power
versus Frequency at a Constant Input Power
60
50
40
30
20
10
0
60
V
DD
= 65 Vdc, P
= 22 dBm, CW
V
= 65 Vdc, I
= 25 mA, CW
in
DD DQ
f = 14.2 MHz
54 MHz
f = 14.2 MHz
7.2 MHz
50
40
30
7.2 MHz
1.8 MHz
1.8 MHz
54 MHz
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
10
15
20
P ,
INPUT POWER (dBm)
25
30
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
in
Figure 7. CW Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
f
P1dB
(W)
P3dB
(W)
(MHz)
1.8
7.2
14.2
54
36.4
43.7
44.5
38.7
44.6
51.3
52.4
47.7
Figure 8. CW Output Power versus Input Power
90
28
V
DD
= 65 Vdc, I
= 25 mA, CW
DQ
f = 14.2 MHz
80
27
26
25
24
23
22
21
1.8 MHz
G
ps
70
60
50
40
30
20
54 MHz
7.2 MHz
f = 14.2 MHz
7.2 MHz
D
54 MHz
40
1.8 MHz
10
20
0
10
20
30
50
60
P
, OUTPUT POWER (WATTS)
out
Figure 9. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRFX035H
RF Device Data
NXP Semiconductors
7
TYPICAL CHARACTERISTICS — 1.8–54 MHz
BROADBAND REFERENCE CIRCUIT — TWO
–
-TONE
(1)
–20
–20
3rd Order
–30
3rd Order
–30
–40
–50
–60
5th Order
5th Order
–40
7th Order
–50
–60
–70
7th Order
V
= 65 Vdc, I
= 60 mA
DQ
V
= 65 Vdc, I
= 60 mA
DD
DD
DQ
f1 = 1.799 MHz, f2 = 1.801 MHz
Two
–
–
T
one Measurements
f1 = 7.199 MHz, f2 = 7.201 MHz
Two
–
–
T
one Measurements
–70
0
10
20
30
40
50
0
10
20
P ,
OUTPUT POWER (WATTS) PEP
out
30
40
50
P
, OUTPUT POWER (WATTS) PEP
out
Figure 10. Intermodulation Distortion
Figure 11. Intermodulation Distortion
Products versus Output Power — 1.8 MHz
Products versus Output Power — 7.2 MHz
–20
–20
3rd Order
3rd Order
5th Order
7th Order
–30
–40
–50
–60
–30
–40
–50
–60
5th Order
7th Order
V
= 65 Vdc, I
= 60 mA
V
= 65 Vdc, I
= 60 mA
DD
DQ
DD
DQ
f1 = 14.199 MHz, f2 = 14.201 MHz
Two
–
–
T
one Measurements
f1 = 53.999 MHz, f2 = 54.001 MHz
Two
–
–
T
one Measurements
–70
–70
0
10
20
30
40
50
0
10
20
P ,
OUTPUT POWER (WATTS) PEP
out
30
40
50
P
, OUTPUT POWER (WATTS) PEP
out
Figure 12. Intermodulation Distortion
Figure 13. Intermodulation Distortion
Products versus Output Power — 14.2 MHz
Products versus Output Power — 54 MHz
1. The
distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 dB above the power in a single tone.
MRFX035H
RF Device Data
NXP Semiconductors
8
1.8–54 MHz BROADBAND REFERENCE CIRCUIT
f
Z
Z
load
source
MHz
1.8
7.2
14.2
54
42.6 – j2.98
42.5 – j1.78
42.4 – j2.46
41.3 – j8.14
48.8 + j0.18
48.5 – j1.37
48.3 – j2.80
46.5 – j10.59
Z
Z
=
T
e
st
circuit impedance as measured from
gate to ground.
source
=
T
e
st
circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 14. Broadband Series Equivalent Source and Load Impedance — 1.8–54 MHz
MRFX035H
RF Device Data
NXP Semiconductors
9
230 MHz PRODUCTION TEST FIXTURE — 3.0
5.0
(7.6 cm
12.7 cm)
C11
C2
C9
C7
D105952
C4
B2
C3
C8
B1
L3
C10
C12
C5
L4
L2
C1
C6
C13
C14
C15
L5
L1
cut
out
area
MRFX035H
Rev. 0
aaa
–
-031940
Figure 15. MRFX035H Production Test Fixture Component Layout — 230 MHz
Table 8. MRFX035H Production Test Fixture Component Designations and Values — 230 MHz
Part
Description
Part Number
2743021447
Manufacturer
Fair-Rite
B1, B2
C1
Long RF Bead
15 pF Chip Capacitor
22
F
,
3
5 V
T
a
ntalum Capacitor
2.2
F Chip Capacitor
0.1
F Chip Capacitor
1000 pF Chip Capacitor
5.1 pF Chip Capacitor
0.1
F Chip Capacitor
1
F Chip Capacitor
ATC100B150JT500XT
T491X226K035AT
C3225X7R1H225K250AB
CDR33BX104AKWS
ATC100B102JT50XT
ATC100B5R1CT500XT
C1206C104K1RACTU
C3225JB2A105K200AA
C5750X7S2A156M230KB
MCGPR100V477M16X32
ATC100B5R6C500XT
A02TJLC
ATC
C2
Kemet
TDK
C3
C4
AVX
C5, C10, C12, C15
ATC
C6
ATC
C7
Kemet
TDK
C8
C9
15
F Chip Capacitor
470
F
,
1
00 V Electrolytic Capacitor
5.6 pF Chip Capacitor
5.0 nH, 2 Turn Inductor
8.0 nH, 3 Turn Inductor
120 nH Inductor
TDK
C11
C13, C14
L1
Multicomp
ATC
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Coilcraft
MTL
L2
A03TJLC
L3
1812SMS-R12JLC
1812SMS-R10JLC
B08TJLC
L4
100 nH Inductor
L5
28 nH, 8 Turn Inductor
PCB
Rogers AD255C, 0.030
,
= 2.55, 1 oz. Copper
D105952
r
MRFX035H
RF Device Data
NXP Semiconductors
10
TYPICAL CHARACTERISTICS — 230 MHz, T
C
= 25
_
C
PRODUCTION TEST FIXTURE
40
V
= 65 Vdc, f = 230 MHz, CW
DD
35
30
25
20
15
10
P
= 0.11 W
in
P
= 0.06 W
in
5
0
0
0.5
1
1.5
2
2.5
3
3.5
V
, GATE
–
–
SOURCE VOLTAGE (VOLTS)
GS
Figure 16. Output Power versus Gate
–
-Source
Voltage at a Constant Input Power
48
30
90
80
70
60
50
V
DD
= 65 Vdc, I
= 15 mA, f = 230 MHz, CW
DQ
V
= 65 Vdc, f = 230 MHz, CW
G
DD
I
ps
46
44
42
40
38
36
34
32
30
28
28
26
24
22
= 150 mA
DQ
100 mA
50 mA
D
15 mA
20
18
40
30
20
10
0
150 mA
100 mA
16
14
12
50 mA
15 mA
6
9
12
15
18
21
24
27
1
10
100
P ,
INPUT POWER (dBm)
in
P
, OUTPUT POWER (WATTS)
out
f
Figure 18. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
230
37
43
Figure 17. Output Power versus Input Power
90
80
28
30
28
26
24
22
20
I
= 15 mA, f = 230 MHz, CW
V
= 65 Vdc, I
= 15 mA, f = 230 MHz, CW
–40
_
C
DQ
DD
DQ
26
24
22
20
18
16
14
12
10
25
_
C
G
ps
70
60
85
_
C
T
= –40
_
C
C
50
40
25
_
C
85
_
C
65 V
60 V
55 V
50 V
30
20
10
0
18
16
14
12
D
40 V
V
= 30 V
DD
0.1
1
10
100
0
5
10
15
20
25
30
35
40
45
50
P
, OUTPUT POWER (WATTS)
P
, OUTPUT POWER (WATTS)
out
out
Figure 20. Power Gain versus Output Power
and Drain
–
-Source Voltage
Figure 19. Power Gain and Drain Efficiency
versus Output Power
MRFX035H
RF Device Data
NXP Semiconductors
11
230 MHz PRODUCTION TEST FIXTURE
f
Z
Z
load
source
MHz
230
3.1 + j27.0
16.2 + j39.5
Z
Z
=
T
e
st
circuit impedance as measured from
gate to ground.
source
=
T
e
st
circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 21. Series Equivalent Source and Load Impedance — 230 MHz
MRFX035H
RF Device Data
NXP Semiconductors
12
PACKAGE DIMENSIONS
MRFX035H
RF Device Data
NXP Semiconductors
13
MRFX035H
RF Device Data
NXP Semiconductors
14
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to
http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2018
Initial release of data sheet
MRFX035H
RF Device Data
NXP Semiconductors
15
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us:
Home Page:
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Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address:
nxp.com/Sales
T
e
rmsandConditions
.
NXP and the NXP logo are trademarks of NXP B.
V
.
A
ll other product or service names
are the property of their respective owners.
E
2018 NXP B.
V
.
Document Number: MRFX035H
Rev. 0, 12/2018
