NXP-Semicon-MW4IC001MR4
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MW4IC001MR4
Rev. 4, 5/2006
Freescale Semiconductor
T
e
chnical Data
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lea
d
–
f
ree
terminations.
MW4IC001MR4
RF LDMOS Wideband Integrated
Power Amplifier
The MW4IC001M wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Freescale’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2170 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and
W
–
C
DMA.
80
0
–
2
170 MHz, 900 mW, 28 V
W-
C
DMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
•
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
•
High Gain, High Efficiency and High Linearity
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Larg
e
–
S
ignal Impedance Parameters
CASE 46
6
–
0
3, STYLE 1
PL
D
–
1
.5
PLASTIC
•
In
T
a
pe and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drai
n
–
S
ource Voltage
Gat
e
–
S
ource Voltage
V
– 0.5, +65
– 0.5, +15
DSS
V
GS
T
o
tal Device Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
4.58
0.037
W
W/
°
C
C
D
Storage
T
e
mperature Range
Operating Junction
T
e
mperature
T
– 65 to +150
150
°
C
°
C
stg
T
J
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case @ 85
°
C
R
θ
JC
27.3
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
Machine Model
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 2
2
–
A
113, IPC/JEDEC
J
–
S
T
D
–
0
20
3
260
°
C
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V =
65 Vdc, V
= 0 Vdc)
I
I
I
—
—
—
—
—
—
10
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gat
e
–
S
ource Leakage Current
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V =
10 V, I
= 50
μ
A)
V
V
2
2
3
5
5
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
28 V, I
= 10 mA)
3.7
DS
D
Drai
n
–
S
ource O
n
–
V
oltage
(V =
10 V, I
= 0.05 A)
V
—
—
0.48
0.05
0.9
—
GS
D
Forward Transconductance
(V =
10 V, I
= 0.1 A)
g
fs
DS
D
Dynamic Characteristics
Output Capacitance
(V =
28 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
—
—
45
—
—
pF
pF
oss
GS
Reverse Transfer Capacitance
C
0.62
rss
(V =
28 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
GS
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system)
Tw
o
–
T
o
ne Common Source Amplifier Power Gain
G
—
—
—
—
13
29
—
—
—
—
dB
%
ps
(V =
28 Vdc, P
= 0.9 W PE
P
, I
=
1
2 mA,
DD
out
DQ
f = 2170 MHz,
T
o
ne Spacing = 100 kHz)
Tw
o
–
T
o
ne Drain Efficiency
η
D
(V =
28 Vdc, P
= 0.9 W PE
P
, I
=
1
2 mA,
DQ
DD
out
f = 2170 MHz,
T
o
ne Spacing = 100 kHz)
Third Order Intermodulation Distortion
IMD
IRL
– 28
–
1
8
dBc
dB
(V =
28 Vdc, P
= 0.9 W PE
P
, I
=
1
2 mA,
DQ
DD
out
f = 2170 MHz,
T
o
ne Spacing = 100 kHz)
Input Return Loss
(V =
28 Vdc, P
= 0.9 W PE
P
, I
=
1
2 mA,
DQ
DD
out
f = 2170 MHz,
T
o
ne Spacing = 100 kHz)
Output Power, 1 dB Compression Point, CW
P1dB
—
12
0.85
13
—
—
—
—
W
dB
%
(V =
28 Vdc, I
= 12 mA, f = 2170 MHz)
DD
DQ
Commo
n
–
S
ource Amplifier Power Gain
G
ps
(V =
28 Vdc, P
= 0.9 W CW, I
= 12 mA, f = 2170 MHz)
= 12 mA, f = 2170 MHz)
= 12 mA, f = 2170 MHz)
DD
out
DQ
DQ
DQ
Drain Efficiency
η
D
35
38
(V =
28 Vdc, P
= 0.9 W CW, I
DD
out
Input Return Loss
IRL
–
1
0
–
1
6
dB
(V =
28 Vdc, P
= 0.9 W CW, I
DD
out
MW4IC001MR4
RF Device Data
Freescale Semiconductor
13
V
GG
V
D
D
C
1
C 2
+
Z
6
1
C
7
C
6
C8
Z
7
R
R
F
O
U
T
P
U
T
R F
I N
PU T
Z
8
Z
9
Z
1
0
Z
11
Z
1
2
Z1 3
DUT
Z
1
Z
2
Z
3
Z
4
Z
5
R
2
L
2
C
5
C
11
C 1
3
C1 2
L
1
C
3
C
9
C1 0
C
4
Z1
Z2
Z3
Z4
Z5
1.331
″
x 0.044
″
Microstrip
0.126
″
x 0.076
″
Microstrip
0.065
″
x 0.175
″
Microstrip
0.065
″
x 0.195
″
Microstrip
0.680
″
x 0.145
″
Microstrip
1.915
″
x 0.055
″
Microstrip
0.120
″
x 0.141
″
Microstrip
Z9
0.062
″
x 0.044
″
to 0.615
″
T
a
per
0.082
″
x 0.615
″
Microstrip
0.075
″
x 0.044
″
Microstrip
0.625
″
x 0.044
″
Microstrip
1.375
″
x 0.044
″
Microstrip
Z10
Z11
Z12
Z13
Z6, Z7
Z8
PCB
Rogers RO4350, 0.020
″
,
ε
= 3.5
r
Figure 1. MW4IC001MR4 900 MHz Test Circuit Schematic
Table 6. MW4IC001MR4 900 MHz Test Circuit Component Designations and Values
Part
Description
0.1
μ
F
,
1
00 V Chip Capacitors
43 p
F
,
5
00 V Chip Capacitors
12 p
F
,
5
00 V Chip Capacitor
22
μ
F
,
3
5 V
T
a
ntalum Chip Capacitor
4.7 p
F
,
5
00 V Chip Capacitor
0.
6
–
4
.5 p
F
,
5
00 V Variable Capacitors
2.7 p
F
,
5
00 V Chip Capacitor
3.3 p
F
,
5
00 V Chip Capacitor
5.6 nH Chip Inductor
Part Number
C1210C104K5RACTR
100B430JP500X
100B120JP500X
T491X226K035AS
100B4R7CP500X
27271SL
Manufacturer
Kemet
C1, C6
C2, C3, C5, C7
ATC
C4
ATC
C8
Kemet
ATC
C9
C10, C11
C12
C13
L1
Johanson
ATC
100B2R7CP500X
100B3R3CP500X
0805 Series
ATC
AVX
L2
10 nH Chip Inductor
1008 Series
ATC
R1
100
W
Chip Resistor
CRCW12061001F100
CRCW120620R0F100
Dale
Dale
R2
20
W
Chip Resistor
MW4IC001MR4
RF Device Data
Freescale Semiconductor
14
V
V
G
G
D
D
C
8
C
1
C2
C
6
C
7
R
1
C1 2
C
9
C 3
C
4
C
5
L
2
C11
C
1
0
C
1
3
L
1
R2
MW4IC001MR4
900 MHz
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MW4IC001MR4 900 MHz Test Circuit Component Layout
MW4IC001MR4
15
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS – 900 MHz
5
0
−
−
−
−
−
−
−
−
−
−
1 5
17
19
21
23
25
27
29
31
33
3 5
I RL
4
4
6
2
η
D
3
3
8
4
V
P
I
=
=
2
0
8 Vd
c
. 9
W (
PE P )
D S
o u t
=
1
4
m
A
3
2
0
6
D Q
Tw
o
−
T
o
n
e
M
e asu re me n t
S
1
0
0
k
H
z
T
o
ne
p
a
c
i
n
g
2
2
I
M
3
1
1
8
4
G
p
s
1
0
−
8
5
5
8
6
0
8
6
5
8
7
0
8
7
5
8
8
0
8
8
5
8
9
0
8
9
5
9
0
0
9
0
5
f
1
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 3. Two-Tone Performance versus
Frequency
1
1
1
1
5
4
3
2
6
5
5
0
5
0
−
2
5
G
η
D
p
s
V
=
2
8
V
8 0
MH
d
c
D S
=
−
−
3
0
5
f
f
1
8
z
I
=
8
m
A
2
=
8
8
0
.
1
M
H
z
D
Q
3
4
4
5
0
P
1
d
B
1
0
1
m
A
1
1
8
m
A
−
−
4
0
5
1
0
9
3
3
5
0
1
6
m
A
4
8
7
V
=
2
8
V
d
c
2
2
5
0
D
S
1
4
m
A
−
−
5
0
5
I
f
=
1
4
= 880
M H
z
m
A
D
Q
T
w
o
−
T
o
n
e
M
e
a
s
u
r
e
m
e
n
t
1
0
0
k
H
z
T
o
n
e
S
p
a
c
i
n
g
1
2
m
A
6
1
5
5
0
0
.
2
0
.
4
0
.
6
0
.
8
1
.
0
1
.
2
1
.
4
0
.
0
1
0
.
1
1
1
0
P
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
, O
o u t
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
E
P
o
u
t
Figure 4. CW Performance
versus Output
Power
Figure 5. Intermodulation Distortion versus
Output Power
−
−
−
2
3
3
5
0
5
−
2
5
V
=
2
8
V
= 1
4 m
A
d
c
D
S
I
f
f
D
Q
−
−
−
30
35
40
1
2
=
=
8
8
0
0
M
H z
M H
z
8
8
.
1
−
−
4
0
5
4
3
r
d
O
r
d
e
r
−
−
5
0
5
5
V
= 2
8 V
d c
D S
= 1
4 m
A
1
0
M
H
z
I
f
f
D
Q
5
7
t
t
h
h
O
O
r
r
d
e
e
r
r
−
−
6
0
5
−
−
4
5
0
1
M
H
z
1
2
=
=
8
8
0
M
H
z
,
T
w
o
−
T
o
n
e
M
e
a
s
u
on e
S paci
ng
r
e
m
e
n
t
f
1
+
T
o
n
e
S
p
a
c
i
n
g
6
To ne
S
1
0
0
k
H
z
T
d
T
w
o
−
T
o
n
e
M
e
a
s
u
r
e
m
e
n
t
p
a
c
i
n
g
=
1
0
0
k
H
,
z
−
7
0
5
0
.
0
1
0
.
1
1
)
1
0
0
.
0
1
0
.
1
1
1
0
P
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
P
E
P
P
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
E
P
o
u
t
o
u
t
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Third Order Intermodulation
Distortion versus Output Power
MW4IC001MR4
RF Device Data
Freescale Semiconductor
16
Z
5
V
GG
Z1 2
+
V
F
D D
C
1
C2
+
Z
4
C
4
C6
Z11
R
1
R
O
U
T
P
U
T
R F
IN P UT
Z
8
Z
9
Z
1
3
Z
1
4
Z
1
5
Z
1
0
DUT
Z
1
Z
2
Z
3
Z
6
Z
7
C
5
C
3
C
7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.018
″
x 0.044
″
Microstrip
0.495
″
x 0.296
″
Microstrip
0.893
″
x 0.500
″
Microstrip
1.340
″
x 0.022
″
Microstrip
0.912
″
x 0.022
″
Microstrip
0.241
″
x 0.500
″
Microstrip
0.076
″
x 0.150
″
Microstrip
0.294
″
x 0.150
″
Microstrip
Z9
0.067
″
x 0.264
″
Microstrip
0.457
″
x 0.492
″
Microstrip
0.719
″
x 0.022
″
Microstrip
1.149
″
x 0.022
″
Microstrip
0.677
″
x 0.434
″
Microstrip
0.095
″
x 0.264
″
Microstrip
0.772
″
x 0.044
″
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
Rogers RO4350, 0.020
″
,
ε
= 3.5
r
Figure 8. MW4IC001MR4 1990 MHz Test Circuit Schematic
Table 7. MW4IC001MR4 1990 MHz Test Circuit Component Designations and Values
Part
Description
22
μ
F
,
3
5 V
T
a
ntalum Capacitors
10 p
F
,
5
00 V Chip Capacitors
10 p
F
,
5
00 V Chip Capacitor
0.
6
–
4
.5 p
F
,
5
00 V Variable Capacitor
1 k
W
Chip Resistor
Part Number
T491X226K035AS
100B100JCA500X
600S100JW
Manufacturer
Kemet
C1, C6
C2, C4
C3, C5
C7
ATC
ATC
27271SL
Johanson
Dale
R1
CRCW12061021F100
V
V
D
D
G
G
C1
C6
C2
C4
R1
C3
C5
C7
MW4IC001MR4
1990 MHz
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 9. MW4IC001MR4 1990 MHz Test Circuit Component Layout
MW4IC001MR4
17
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS – 1990 MHz
4
3
0
5
−
11
I
R
L
−
−
1
4
7
η
1
D
3
2
2
1
1
0
5
0
5
0
5
−
20
V
=
2
8
V
d
c
,
P
=
0
.
9
W
(
P
E
P
)
,
I
= 1
2 m
A
i
DD
o
o u t
e
D Q
−
−
2
3
6
Tw
−
To
n
e
M
e
a
s
u
r
m
e
n
t
,
1
0
0
k
H
z
T
o
n
e
S
p
a
c
n
g
G
p
s
2
−
−
2
9
2
I
M
D
3
0
−
3
5
1
9
3
0
1
9
4
0
1
9
5
0
1
9
6
0
1
9
7
0
1
9
8
0
1
9
9
0
f
1
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 10. Two-Tone Performance versus
Frequency
1
4
.
4
0
5
6
−
3
0
G
p
s
I
=
2
0
m
A
D
Q
−
−
3
5
0
1
1
4
.
4
4
3
2
1
8
0
2
4
6
4
3
.
6
−
−
45
50
55
1
6
m
A
1
1
3
2
.
2
P
1
d
B
V
= 2
8 Vd
c
1
D D
=
V
=
2
8
V
d
c
D
D
f
1
9
9
0
M
H
z
,
f
2
=
1
9
9
0
t
.
1
M
H
z
.
8
I
f
= 2
= 1
990
1
m
A
H
D
Q
−
−
T
w
o
−
T
o
n
e
M
e
a
s
u
r
e
m
e
n
η
M
z
D
9
1
.
6
m
A
1
2
m
A
1
0
0
k
H
z
T
o
n
e
S
p
a
c
i
n
g
6
0
1
2
.
4
0
.
1
0
.
2
0
.
3
0
.
4
0
.
5
0
.
6
0
.
7
0
.
8
0
.
9
1
.
0
1
.
1
1
.
2
1
.
3
0
.
0
0
.
1
1
P
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
, O
o u t
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
E
P
o
u
t
Figure 11. CW Performance versus Output
Power
Figure 12. Intermodulation Distortion versus
Output Power
−
3
3
4
0
5
0
−
3
0
5
0
−
−
−
−
3
4
3
r
d
O
r
d
e
r
−
−
−
45
50
55
1
0
M
H
z
5
t
h
O
r
d
e
r
−
−
4
5
0
−
−
6
0
5
5
1
M
H
z
V
= 2
8 V
dc
D D
= 1
2 m
A
I
f
f
D
Q
6
V
I
=
D D
2
8
V
d
c
1
2
=
=
1
9
9
0
M
H
z
7
t
h
O
r
d
e
r
−
−
5
5
0
=
1
2
m
A
,
f
1
=
1
9
9
0
M
H
z
,
f
2
=
1
9
9
0
.
1
M
H
z
f
1
+
T
o
n
e
S
p
a
c
i
n
g
−
−
7
0
5
D
Q
1
0
0
k
H
z
T
w
o
−
T
o
n
e
M
e
a
s
u
r
e
m
e
n
t
,
1
0
0
k
H
z
T
o
n
e
S
p
a
c
i
n
g
T
w
o
−
T
o
n
e
M
e
a
s
u
r
e
m
e
n
t
6
7
0
.
0
1
0
.
1
1
0
.
0
1
0
.
1
1
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
E
P
P
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
E
P
o
u
t
Figure 13. Intermodulation Distortion
Products versus Output Power
Figure 14. Third Order
Intermodulation
Distortion versus Output Power
MW4IC001MR4
RF Device Data
Freescale Semiconductor
18
Z
5
V
G
G
Z1 2
+
V
F
D D
C
1
C
2
+
Z
4
C
4
C6
Z11
R
1
R
O
U
T
P
U
T
R F
IN P UT
Z
8
Z
9
Z
1
3
Z
1
4
Z
1
5
Z
1
0
D
U
T
Z
1
Z
2
Z
3
Z
6
Z
7
C
5
C
3
C
7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.267
″
x 0.044
″
Microstrip
0.058
″
x 0.044
″
Microstrip
0.758
″
x 0.256
″
Microstrip
1.073
″
x 0.022
″
Microstrip
1.361
″
x 0.022
″
Microstrip
0.205
″
x 0.332
″
Microstrip
0.109
″
x 0.150
″
Microstrip
0.210
″
x 0.150
″
Microstrip
Z9
0.106
″
x 0.344
″
Microstrip
0.783
″
x 0.500
″
Microstrip
0.847
″
x 0.022
″
Microstrip
1.055
″
x 0.022
″
Microstrip
0.291
″
x 0.387
″
Microstrip
0.050
″
x 0.287
″
Microstrip
0.950
″
x 0.044
″
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
Rogers RO4350, 0.020
″
,
ε
= 3.5
r
Figure 15. MW4IC001MR4 2170 MHz Test Circuit Schematic
Table 8. MW4IC001MR4 2170 MHz Test Circuit Component Designations and Values
Part
Description
22
μ
F
,
3
5 V
T
a
ntalum Capacitors
10 p
F
,
5
00 V Chip Capacitors
10 p
F
,
5
00 V Chip Capacitor
0.
6
–
4
.5 p
F
,
5
00 V Variable Capacitor
1 k
W
Chip Resistor
Part Number
T491X226K035AS
100B100JCA500X
600S100JW
Manufacturer
Kemet
C1, C6
C2, C4
C3, C5
C7
ATC
ATC
27271SL
Johanson
Dale
R1
CRCW12061021F100
V
V
D
D
G
G
C1
C6
C4
C2
R1
C5
C3
C7
MW4IC001MR4
2170 MHz
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 16. MW4IC001MR4 2170 MHz Test Circuit Component Layout
MW4IC001MR4
19
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS – 2170 MHz
3
2
2
2
7
2
−
−
−
13
18
23
I RL
η
D
V
P
=
=
2
8
V
d
c
D D
o u t
0
.
9
W
(
P
E
P
)
I
=
1
2
m
A
D Q
Tw
o
−
To
n
e
M
e
a su re me nt
,
S
1
0
0
k
H
z
T
o
n
e
p
a
c
i
n
g
I
M
D
1
1
7
2
−
−
2
8
3
G
p s
3
2
1
1
0
2
1
2
0
2
1
3
0
2
1
4
0
2
1
5
0
2
1
6
0
2
1
7
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 17. Two-Tone Performance versus
Frequency
1
3
.
8
6
0
−
2
0
V
= 2
8 Vd
c
2
D D
=
f
1
1
7
0
M
H
z
,
f
2
=
2
1
7
0
.
1
M
H
z
G
5
4
0
0
1
1
3
3
.
.
4
0
p
s
−
−
2
5
0
T
w
o
−
T
o
n
e
M
e
a
s
u
r
e
m
e
n
t
1
0
0
k
H
z
T
o
n
e
S
p
a
c
i
n
g
7
.
2
m
A
3
2
0
m
A
3
2
1
0
0
0
0
−
−
3
5
0
1
1
2
2
.
.
6
2
η
D
1
6
m
A
4
P
1
d
B
V
=
2
8
V
d
c
D
D
1
1
.
.
8
4
−
−
4
5
0
I
f
=
1
2
m
A
D
Q
9
.
6
m
A
=
2
1
7
0
M
H
z
1
2
m
A
1
1
5
0
.
1
0
.
2
0
.
3
0
.
4
0
.
5
0
.
6
0
.
7
0
.
8
0
.
9
1
.
0
1
.
1
1
.
2
1
.
3
1
.
4
1
.
5
0
.
01
0
.
1
1
P
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S)
P
EP
o u t
P
,
OU
T
P
U
T
PO
W
E
R
(
W
A
T
T
S
)
P
E
P
o
u
t
Figure 18. CW
Performance versus Output
Power
Figure 19. Intermodulation Distortion versus
Output Power
−
20
25
30
35
−
2
0
V
I
= 2
8 V
dc
= 1
2 m
A
V
=
2
8
V
d
c
,
I
=
1
2
m
A
,
D
D
D D
=
DQ
f
−
−
2
5
0
f
1
2
1
7
0
M
H
z
,
2
=
2
1
7
0
.
1
M
H z
H
D Q
−
−
−
3
f
f
1
=
=
2
1
7
0
M
H
z
T
w
o
−
To
n
e
M
e
a
s
u
r
e
m
e
n
t
,
1
0
0
k
z
To
n
e
S
p
a
c
i
n
g
2
f
1
+
T
o
n
e
S
pa
c
i
n
g
−
−
−
−
35
40
45
50
T
w
o
−
T
o
n
e
M
e
a
s
u
r
e
m
e
n
t
3
r
d
O
r
d
e
r
1
M
H
z
1
0
M
H
z
5
t
h
O
r
d
e
r
−
−
5
5
0
6
−
−
4
0
5
7
t
h
O
r
d
e
r
−
−
6
5
0
1
0
0
k
H
z
4
7
0
.
0
1
0
.
1
1
0
.
0
1
0
.
1
1
P
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
E
P
P
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P
E
P
o
u
t
o
u
t
Figure 21. Third Order Intermodulation
Distortion versus Output Power
Figure 20. Intermodulation Distortion
Products versus Output Power
MW4IC001MR4
RF Device Data
Freescale Semiconductor
20
f
=
86
0
M
H
z
Z
f
=
9
0
0
M
H
z
l o
a d
Z
= 5
0
Ω
o
Z
s
o
u
r
c
e
f =
9 00 M
Hz
f
=
8
6
0
M
H
z
V
=
2
8
V
,
I
=
1
4
m
A
,
P
o u t
=
0
.
9
W
P
E
P
D
D
D
Q
f
Z
Z
load
source
MHz
Ω
Ω
860
865
870
27.853 + j5.908
28.617 + j6.078
29.458 + j6.285
15.492 + j63.669
15.592 + j68.687
15.788 + j69.799
875
880
30.306 + j6.422
31.223 + j6.567
32.194 + j6.660
33.228 + j6.656
34.293 + j6.624
35.424 + j6.508
15.835 + j70.863
15.975 + j71.920
16.094 + j73.091
16.286 + j74.159
16.344 + j75.236
16.628 + j76.283
885
890
895
900
Z
Z
=
=
T
e
st circuit impedance as measured from
gate to ground.
source
load
T
e
st circuit impedance as measured
from drain to ground.
O
u
t
p
u
t
D
U
e
n
vice
d er
T
e
s
t
I
n
p
u
t
M i
Ne t
wo rk
a
t
c
h
n
g
M i
N etw or
k
a
t
c
h
n
g
Z
Z
s
o
u
r
c
e
l
o
a
d
Figure 22. Series Equivalent Source and Load Impedance
MW4IC001MR4
RF Device Data
Freescale Semiconductor
21
f
= 21
8 0 M
Hz
Z
l
o
a
d
f =
1 920
MH z
f
=
0
21 0 0
M Hz
f
=
2
0
0
0
M
H
z
Z
l o
a d
f
=
2
1
8
M
H
z
f
=
2
0
0
0
M
H
z
f =
21 0 0
M Hz
Z
s
o
u
r
c
e
f
=
1
9
2
0
M
H
z
Z
so u r
ce
Z
=
5
0
Ω
o
Z
=
5
0
Ω
o
V
=
2 8
V
,
I
=
1
2
m
A
,
P
o u t
=
0
.
9
W
P
E
P
V
=
2
8
V,
I
=
1
2
m
A
,
P
o u
t
=
0
.
9
W
P
E
P
D
D
D
Q
D
D
D
Q
f
Z
Z
load
Ω
f
Z
Z
load
Ω
source
Ω
source
Ω
MHz
MHz
2100
2110
2120
2.667 + j12.903
2.671 + j13.070
2.664 + j13.224
5.892 + j26.374
6.092 + j26.739
6.281 + j27.094
1920
1930
1940
4.238 + j15.142
4.322 + j15.362
4.490 + j15.466
7.764 + j28.829
8.056 + j29.352
8.436 + j29.727
2130
2140
2.694 + j13.431
2.703 + j13.511
2.702 + j13.700
2.745 + j13.952
2.754 + j14.026
2.784 + j14.206
6.540 + j27.510
6.748 + j27.795
6.996 + j28.182
7.300 + j28.678
7.562 + j28.987
7.862 + j29.411
1950
1960
4.605 + j15.711
4.752 + j15.904
4.905 + j16.050
5.071 + j16.236
5.262 + j16.446
5.487 + j16.632
8.809 + j30.249
9.183 + j30.763
9.598 + j31.213
2150
2160
1970
1980
10.030 + j31.690
10.546 + j32.237
11.054 + j32.726
2170
2180
1990
2000
Z
Z
=
=
T
e
st circuit impedance as measured from
gate to ground.
source
load
Z
Z
=
T
e
st circuit impedance as measured from
gate to ground.
source
load
T
e
st circuit impedance as measured
from drain to ground.
=
T
e
st circuit impedance as measured
from drain to ground.
O
u
t
p
u
t
O
u
t
p
u
t
D
U
e
n
vice
d er
T
e
s
t
D
U
e
n
v
i
c
e
I
n
p
u
t
I
n
p
u
t
M i
Ne t
w or
k
a
t
c
h
n
g
M i
Ne t
wor k
a
t
c
h
n
g
d
e
r
T
e
s
t
M c
Ne t
wo rk
a
t
h
i
n
g
Ma
N e tw
o rk
t
c
h
i
n
g
Z
Z
Z
Z
s
o
u
r
c
e
l
o
a
d
s
o
u
r
c
e
l
o
a
d
Figure 23. Series Equivalent Source and Load Impedance
MW4IC001MR4
RF Device Data
Freescale Semiconductor
22
NOTES
MW4IC001MR4
RF Device Data
Freescale Semiconductor
23
NOTES
MW4IC001MR4
RF Device Data
Freescale Semiconductor
24
NOTES
MW4IC001MR4
RF Device Data
Freescale Semiconductor
25
PACKAGE DIMENSIONS
A
F
3
1
2
R
D
L
B
N
O
T
E
I
S
:
1 .
N T
E RP RET
DI M EN SIO N S
A
N
D
TO L ERA NC ES
P
E
R
A S ME
Y
1
4
.
5
M
,
1
9
8
4
.
2
3
.
.
C
R
O
N
I
T
N
R
B
O
L
L
E
L
E
I
N
D
G
D
I
M
S
E
H
N
A
S
L
I
L
O
O
N
W
:
I
A
N
B
C
L
H
E
E
S
/
F
LA
I
N
Z
O
N
E
V
,
W
,
4
AN D
X
.
N
K
I
N
C
H
E
S
M
I
L
L
I
M
E
T
E
R
S
_
_
D
I
M
M
I
N
M
A
X
M
I
N
M
A
X
“
5
0
.
3
5
(
0
.
8
9
)
X
4
5
A
B
C
D
E
F
0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
2
2
0
1
0
0
0
0
1
2
2
2
0
0
2
0
0
0
0
0
5
2
6
3
2
2
5
4
6
7
4
3
0
5
0
0
0
0
0
0
5
0
0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
2
6
5
5
2
0
6
4
0
3
0
5
5
0
8
3
0
2
2
1
0
0
6
5
1
3
0
0
1
1
4
6
6
5
0
1
5
0
0
0
0
0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4
7
6
3
5
6
2
1
0
9
2
8
0
4
0
1
1
0
0
0
8
6
5
1
3
0
1
1
1
4
7
6
6
0
1
5
0
0
0
0
0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
7
9
8
8
6
1
7
6
5
2
4
1
2
6
3
3
3
5
2
2
3
7
3
1
6
2
8
0
7
4
8
0
0
0
3
1
1
3
5
5
1
0
D
R
A
F
T
_
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
5
5
0
1
6
0
5
0
3
5
0
0
5
0
6
6
0
0
0
2
0
1
0
0
0
0
1
2
2
2
0
0
2
0
0
0
0
0
3
7
5
2
4
7
6
8
8
5
4
0
6
1
1
1
2
1
1
2
5
0
3
6
7
4
6
3
2
4
0
0
8
5
5
0
0
0
Q
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
U
H
ZONE V
ZONE W
P
4
G
H
J
C
E
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PLASTIC
MW4IC001MR4
RF Device Data
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