NXP-Semicon-MW5IC970NBR1
| Part # | NXP-Semicon-MW5IC970NBR1 |
Download  | NXP-Semicon-MW5IC970NBR1 |
Document Number: MW5IC970NBR1
Rev. 1, 5/2006
Freescale Semiconductor
T
e
chnical Data
RF LDMOS Wideband
2
–
S
tage
Power Amplifiers
MW5IC970NBR1
Designed for broadband commercial and industrial applications with frequen-
cies from 132 MHz to 960 MHz. The high gain and broadband performance of
this device make it ideal for larg
e
–
s
ignal, commo
n
–
s
ource amplifier applica-
tions in 28 volt base station equipment. The device has a
2
–
s
tage design with
of
f
–
c
hip matching for the input, interstage and output networks to cover the
desired frequency band.
80
0
–
9
00 MHz, 70 W,
28 V
RF LDMOS WIDEBAND
2-
S
TAGE POWER AMPLIFIERS
•
Typical Performance: 800 MHz, 28 Volts, I
DQ1
= 80 mA,
I
DQ2
= 650 mA, P
out
= 70 Watts PEP
Power Gain — 30 dB
Drain Efficiency — 48%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 850 MHz, 70 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Larg
e
–
S
ignal Impedance Parameters
•
Integrated Quiescent Current
T
e
mperature Compensation
CASE 132
9
–
0
9
T
O
–
2
72 W
B
–
1
6
PLASTIC
with Enable/Disable Function
•
O
n
–
C
hip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
200
°
C Capable Plastic Package
•
RoHS Compliant
•
In
T
a
pe and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
RD2
GND
V
1
2
3
4
5
GND
NC
16
15
Quiescent Current
Temperature Compensation
V
V
/V
RD2
RG2 GS2
V
V
/V
RG2 GS2
/V
RG1 GS1
RF
in1
/V
RG1 GS1
V
D2/
RF
GND
6
14
out2
V
RD1
/RF
7
8
9
10
RF
V
D2
/RF
V
V
in1
out2
D1
out1
/RF
D1 out1
13
12
NC
GND
V
RD1
RF
in2
GND
11
V
V
/RF
/RF
D1
out1
(
T
o
p View)
D1
out1
RF
in2
Note: Exposed
backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer
to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes – AN1987.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
– 0.5,
+
6
5
– 0.5,
+
1
5
– 65 to +200
200
Unit
Vdc
Vdc
°
C
Drai
n
–
S
ource Voltage
V
DSS
Gat
e
–
S
ource Voltage
V
GS
Storage
T
e
mperature Range
Operating Junction
T
e
mperature
T
stg
T
J
°
C
Table 2. Thermal Characteristics
(1)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
°
C/W
θ
JC
Final Application
(P =
70 W CW)
out
Stage 1, 28 Vdc, I
= 80 mA
5.2
0.8
DQ
Stage 2, 28 Vdc, I
= 650 mA
DQ
EDGE Application
(P =
35 W CW)
out
Stage 1, 28 Vdc, I
= 80 mA
5.3
0.8
DQ
Stage 2, 28 Vdc, I
= 650 mA
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD2
2
–
A
114)
Machine Model (per EIA/JESD2
2
–
A
115)
Charge Device Model (per JESD2
2
–
C
101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 2
2
–
A
113, IPC/JEDEC
J
–
S
T
D
–
0
20
3
260
°
C
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28.5 Vdc, I
= 80 mA, I
= 650 mA, P
= 70 W PE
P
,
DD
DQ1
DQ2
out
f1 = 870.0 MHz, f2 = 870.1 MHz
Power Gain
G
26.5
40
30
48
34.5
—
dB
%
ps
Drain Efficiency
η
D
Input Return Loss
Intermodulation Distortion
IRL
—
–
1
2
–
3
3
–
1
0
–
2
8
dB
dBc
IMD
—
Typical 800/900 MHz Performances
(In Freescale 800/900 MHz Reference Fixture, 50 ohm system) V
= 28 Vdc, I
= 80 mA, I
=
DD
DQ1
DQ2
650 mA, 74
0
–
8
70 MHz, 87
0
–
9
60 MHz
Gain Flatness in 30 MHz Bandwidth @ P
= 70 W CW
G
G
—
—
2
—
—
dB
dB
out
F
F
Gain Flatness in 30 MHz Instantaneous Bandwidth
0.2
@ P
= 70 W CW
out
Delay @ P
= 70 W CW Including Output Matching
Delay
—
—
4.5
15
—
—
ns
out
Par
t
–
t
o
–
P
art Phase Variation @ P
= 70 W CW
ΔΦ
°
out
1. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes – AN1955.
(continued)
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
2
V
BIAS
V
D2
R6
R5
F1
R4
R3
R8
R7
R2
C8 C9
1
2
16
15
C18
C17
C16
NC
Quiescent Current
Temperature
Compensation
V
G2R2
R1
3
4
5
C15
Z2
V
G1R1
RF
INPUT
Z6
Z5
Z1
Z3
RF
OUTPUT
C7
C10
Z8
C12
C13
Z7
Z9
C2
6
14
C1
C6
C11
7
8
Z10
Z11
C14
9
C5
NC
10
11
13
12
Z4
C3
C4
F2
V
D1
Z1
0.485
″
x 0.066
″
Microstrip
0.270
″
x 0.040
″
Microstrip
0.068
″
x 0.020
″
Microstrip
0.950
″
x 0.040
″
Microstrip
0.131
″
x 0.233
″
Microstrip
0.797
″
x 0.050
″
Microstrip
Z7
Z8
Z9
Z10
Z11
0.040
″
x 0.233
″
Microstrip
0.450
″
x 0.120
″
Microstrip
0.100
″
x 0.066
″
Microstrip
1.000
″
x 0.040
″
Microstrip
0.148
″
x 0.040
″
Microstrip
Z2
Z3
Z4
Z5
Z6
PCB
Rogers 4350B, 0.030
″
,
ε
= 3.5
r
Figure 3. MW5IC970NBR1 Test Circuit Schematic
Table 6. MW5IC970NBR1 Test Circuit Component Designations and Values
Part
C1, C10, C11
Description
3.9 pF Chip Capacitor
Part Number
600S3R9BT
Manufacturer
ATC
C2
56 pF Chip Capacitor
39 pF Chip Capacitors
10
μ
F Chip Capacitors
24 pF Chip Capacitor
15 pF Chip Capacitors
4.7 pF Chip Capacitor
0.4 pF Chip Capacitor
0.015
μ
F Chip Capacitors
5A Surface Mount Fuse
1A Surface Mount Fuse
681
Ω
, Chip Resistors
4.75 k
Ω
, Chip Resistors
1.21 k
Ω
, Chip Resistors
267
Ω
, Chip Resistor
600S560JW
ATC
C3, C8, C14, C15, C17
GRM40001C0G390J050BD
ECJ4YF1H106Z
600F240JT
Murata
C4, C9
Panasonic
ATC
C5
C6, C7
600F150JT
ATC
C12
600F4R7BT
ATC
C13
600F0R4BT
ATC
C16, C18, C19, C20
GRM400X7R153J050BD
1FT5A
Murata
Little Fuse
Little Fuse
F1
F2
1FT1A
R1, R7
R2, R5
R3, R4, R8
R6
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
3
V
D2
F1
V
V
G2
C9
R6
G1
C8
R8
R7
R4
R3
R5
C18
C17
R2
R1
C16
C15
C11
C10
C13
C12
C7
C2
C6
C
C1
C5
C14
C3
C4
MW5IC970
Rev. 1
V
D1
F2
Figure 4. MW5IC970NBR1 Test Circuit Component Layout
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
60
40
20
60
40
20
PAE
G
ps
V
DD
= 28.5 Vdc, P
= 35 W (Avg.)
out
I
DQ1
100 kHz
T
o
ne Spacing
= 80 mA, I
= 650 mA
DQ2
0
−20
−40
0
IRL
−20
−40
IMD
920
800
820
840
860
880
900
940
960
f, FREQUENCY (MHz)
Figure 5. Tw
o
–
T
one Wideband Performance
@ P
out
= 35 Watts (Avg.)
−10
32
31
30
29
V
= 28.5 Vdc
= 80 mA, I
DD
I
= 975 mA
DQ2
I
= 650 mA
DQ1
DQ2
−20
−30
−40
−50
f1 = 870 MHz, f2 = 870.1 MHz
Two−Tone Measurements
100 kHz
T
o
ne Spacing
812 mA
650 mA
3rd Order
488 mA
325 mA
5th Order
7th Order
V
= 28.5 Vdc, I
= 80 mA
DD
DQ1
28
27
f1 = 870 MHz, f2 = 870.1 MHz
Two−Tone Measurements
100 kHz
T
o
ne Spacing
−60
−70
1
10
, OUTPUT POWER (WATTS) PEP
100
300
1
10
100
200
P
out
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Tw
o
–
T
one Power Gain versus
Output Power
Figure 7. Intermodulation Distortion Products
versus Output Power
−20
−25
−30
−35
34
32
30
28
26
24
70
V
I
= 28.5 Vdc, I
= 80 mA
V
I
= 28.5 Vdc, P
= 35 W (PEP)
out
−30
_
C
DD
DQ1
= 650 mA, f = 870 MHz
DD
= 80 mA, I
= 650 mA
60
50
DQ2
DQ1
DQ2
25
_
C
85
_
C
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 870 MHz
−30
_
C
G
ps
3rd Order
T
= 25
_
C
C
40
30
20
10
0
5th Order
85
_
C
−40
−45
−50
−55
7th Order
PAE
22
20
0.1
1
10
100 200
0.1
1
10
100
1000
TWO−TONE SPACING (MHz)
P ,
OUTPUT POWER (WATTS) CW
out
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Figure 9. Power Gain and Power Added
Efficiency versus CW Output Power
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
32
31
I
I
= 80 mA
= 650 mA
DQ1
DQ2
f = 870 MHz
30
29
28
27
16 V
32 V
24 V
80
28.5 V
100
20 V
60
V
= 12 V
DD
0
20
40
120
140
P ,
OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain versus Output Power
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
6
NOTES
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
7
NOTES
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
8
PACKAGE DIMENSIONS
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
9
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
10
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
11
How to Reach Us:
Home Page:
E-
m
ail:
USA/Europe or Locations Not Listed:
Freescale Semiconductor
T
e
chnical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+
1
–
8
0
0
–
5
2
1
–
6
274 or +
1
–
4
8
0
–
7
6
8
–
2
130
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
T
e
chnical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO
T
o
wer 15F
1-8-
1
, Shim
o
–
M
eguro, Megur
o
–
k
u,
T
o
kyo 15
3
–
0
064
Japan
0120 191014 or +81 3 5437 9125
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
T
e
chnical Information Center
2 Dai King Street
T
a
i Po Industrial Estate
T
a
i Po, N.
T
.
, Hong Kong
+800 2666 8080
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P
.
O. Box 5405
Semiconductor was negligent regarding the design or manufacture of the part.
Denver, Colorado 80217
Freescale
t
and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ
Freescale Semiconductor, Inc. 2006. All rights reserved.
1-
8
0
0
–
4
4
1
–
2
447 or 30
3
–
6
7
5
–
2
140
Fax: 30
3
–
6
7
5
–
2
150
Document Number: MW5IC970NBR1
R
ev. 1, 5/2006
