NXP-Semicon-MW6IC2420NBR1

Document Number: MW6IC2420N  

Rev. 3, 12/2010  

Freescale Semiconductor  

T

e

chnical Data  

RF LDMOS Integrated  

Power Amplifier  

The MW6IC2420NB integrated circuit is designed with on

–

–

chip matching  

that makes it usable at 2450 MHz. This multi

–

–

stage structure is rated for 26 to  

32 Volt operation and covers all typical industrial, scientific and medical  

modulation formats.  

MW6IC2420NBR1  

2450 MHz, 20 W, 28 V  

CW  

RF LDMOS INTEGRATED POWER  

AMPLIFIER  

Driver Applications  

•

Typical CW Performance at 2450 MHz: V

DD

= 28 Volts, I

DQ1

= 210 mA,  

I

DQ2

= 370 mA, P

out

= 20 Watts  

Power Gain — 19.5 dB  

Power Added Efficiency — 27%  

•

•

Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW  

Output Power  

Stable into a 3:1 VSWR. All Spurs Below

–

–

60 dBc @ 100 mW to 10 Watts  

CW P

out  

.

Features  

•

Characterized with Series Equivalent Large

–

–

Signal Impedance Parameters  

and Common Source Scattering Parameters  

•

•

On

–

–

Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)  

Integrated Quiescent Current

T

e

mperature Compensation with  

Enable/Disable Function

(1)  

•

•

•

•

Integrated ESD Protection  

225

°

C Capable Plastic Package  

RoHS Compliant  

CASE 1329

–

-09  

TO

–

-272 WB

–

-16  

PLASTIC  

In

T

a

pe and Reel. R1 Suffix = 500 Units, 44 mm

T

a

pe Width, 13 inch Reel  

GND  

DS1  

NC  

NC  

NC  

1

2

3

4

5

16  

15  

GND  

NC  

V

V

DS1  

RF  

V

/

out  

RF  

6

14  

in  

RF  

RF /V  

out DS2  

DS2  

in  

7

8

NC  

GS1  

GS2  

V

V

9

V

V

GS1  

GS2  

Quiescent Current  

Temperature Compensation  

10  

13  

12  

NC  

GND  

V

DS1  

(1)  

GND  

11  

V

DS1  

(

T

o

p View)  

Note: Exposed

 

backside of the package is  

the source terminal for the transistors.  

Figure 1. Functional Block Diagram  

Figure 2. Pin Connections  

1. Refer

 

to AN1977,

Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

and to AN1987,

Quiescent Current Control  

for the RF Integrated Circuit Device Family

Select Documentation/Application Notes

–

–

A

N1977 or AN1987.  

©

Freescale Semiconductor, Inc., 2007

–

–

2010. All rights reserved.  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

1

Table 1. Maximum Ratings  

Rating  

Symbol  

Value  

–

–

0.5, +68  

–

–

0.5, +6  

–

–

65 to +150  

150  

Unit  

Vdc  

Vdc  

°

C  

Drain

–

–

Source Voltage  

V

DSS  

Gate

–

–

Source Voltage  

V

GS  

Storage

T

e

mperature Range  

Case Operating

T

e

mperature  

Operating Junction

T

e

mperature  

Input Power  

T

stg  

T

C

°

C  

(1,2)  

T

225  

°

C  

J

P

23  

dBm  

in  

Table 2. Thermal Characteristics  

(2,3)  

Characteristic  

Symbol  

Value  

Unit  

Thermal Resistance, Junction to Case  

R

θ

°

C/W  

JC  

W

–

–

CDMA Application  

(P =

 

4.5 W Avg.)  

out  

Stage 1, 28 Vdc, I

 

= 210 mA  

1.8  

1

DQ  

Stage 2, 28 Vdc, I

 

= 370 mA  

DQ  

Table 3. ESD Protection Characteristics  

Test Methodology  

Class  

Human Body Model (per JESD22

–

–

A

1

14)  

Machine Model (per EIA/JESD22

–

–

A

1

15)  

Charge Device Model (per JESD22

–

–

C101)  

1A (Minimum)  

A (Minimum)  

III (Minimum)  

Table 4. Moisture Sensitivity Level  

Test Methodology  

Rating  

Package Peak  

Temperature  

Unit  

Per JESD 22

–

–

A

1

13, IPC/JEDEC J

–

–

STD

–

–

020  

3

260  

°

C  

Table 5. Electrical Characteristics

 

(T =

 

25

°

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

= 210 mA, I

 

= 370 mA,  

DQ2  

Max  

Unit  

Functional Tests

(In Freescale Wideband 2110

–

–

2170 MHz

T

e

st Fixture, 50 ohm system) V

 

= 28 Vdc, I  

DD  

DQ1  

P

= 4.5 W Avg., f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2

–

–

Carrier W

–

–

CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in  

out  

3.84 MHz Channel Bandwidth @

±

5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @

±

10 MHz Offset. Input Signal  

PAR = 8.5 dB @ 0.01% Probability on CCD

F

.  

Power Gain  

G

25.5  

13.7  

—

28  

15  

30  

—

dB  

%

ps  

Power Added Efficiency  

PAE  

IM3  

Intermodulation Distortion  

— 4 3  

— 4 6  

— 1 5  

— 4 0  

— 4 3  

— 1 0  

dBc  

dBc  

dB  

Adjacent Channel Power Ratio  

Input Return Loss  

ACPR  

IRL  

—

—

1. Continuous

 

use at maximum temperature will affect MTT

F

.  

2. MTTF

 

T

o

ols/Development

T

o

ols/Calculators to access  

MTTF calculators by product.  

3. Refer

 

to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Select Documentation/Application Notes

–

–

A

N1955.  

(continued)  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

2

Table 5. Electrical Characteristics

 

(T =

 

25

°

C unless otherwise noted)

(continued)  

A

Characteristic  

Symbol  

Min  

Typ  

= 210 mA, I

 

= 370 mA, 2110

–

–

2170 MHz  

DQ2  

Max  

Unit  

Typical Performances

(In Freescale

T

e

st Fixture, 50 ohm system) V

 

= 28 Vdc, I  

DD  

DQ1  

Video Bandwidth @ 20 W PEP P

 

where IM3 =

–

–

30 dBc  

VBW  

MHz  

out  

(

T

o

ne Spacing from 100 kHz to VBW)  

∆

IMD3 = IMD3 @ VBW frequency

–

–

I

MD3 @ 100 kHz <1 dBc (both  

sidebands)  

—

—

30  

—

—

Quiescent Current Accuracy over

T

e

mperature  

∆

I  

±

5  

%

QT  

(1)  

with 18 k

Ω

Gate Feed Resistors (

–

–

10 to 85

°

C)  

Gain Flatness in 30 MHz Bandwidth @ P

 

= 1 W CW  

out  

G

—

—

0.2  

2

—

—

dB  

F

Average Deviation from Linear Phase in 30 MHz Bandwidth  

Φ

°

@ P

 

= 1 W CW  

out  

Average Group Delay @ P

 

= 1 W CW Including Output Matching  

Delay  

—

—

2.8  

18  

—

—

ns  

out  

Part

–

–

to

–

–

Part Insertion Phase Variation @ P

 

= 1 W CW,  

∆Φ  

°

out  

Six Sigma Window  

Table 6. Electrical Characteristics

 

(T =

 

25

°

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

Typical Performances

(In Freescale

T

e

st Fixture, 50 ohm system) V

 

= 28 Vdc, I  

= 110 mA, I  

—

= 370 mA, 2110

–

–

2170 MHz  

DQ2  

DD  

DQ1  

Saturated Pulsed Output Power  

P

60  

—

W

sat  

(8

μ

sec(on), 1 msec(off))  

1. Refer

 

to AN1977,

Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

and to AN1987,

Quiescent Current Control  

for the RF Integrated Circuit Device Family

Select Documentation/Application Notes

–

–

A

N1977 or AN1987.  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

3

V

DS2  

1

2

3

4

5

DUT  

16  

C2  

C11  

V

DS1  

NC 15  

NC  

NC  

C1  

Z3  

Z10  

Z5  

RF  

INPUT  

RF  

OUTPUT  

Z1  

Z2  

Z4  

C6 Z6  

Z7  

Z8  

Z9  

14  

6

C8  

C14  

C15  

C7  

C9  

C10  

7

8

9

NC  

Z11  

Quiescent Current  

Temperature  

Compensation  

V

GS1  

NC 13  

12  

10  

11  

C5  

NC  

NC  

R1  

V

GS  

C4  

C12  

C3  

V

C13  

R2  

GS2  

Z1  

Z2  

Z3, Z8  

Z4  

0.510

″

x 0.054

″

Microstrip  

0.300

″

x 0.054

″

Microstrip  

0.410

″

x 0.054

″

Microstrip  

0.138

″

x 0.237

″

Microstrip  

0.086

″

x 0.237

″

Microstrip  

Z6  

Z7  

Z9  

Z10, Z11  

PCB  

0.189

″

x 0.237

″

Microstrip  

0.127

″

x 0.054

″

Microstrip  

0.182

″

x 0.054

″

Microstrip  

1.073

″

x 0.054

″

Microstrip  

Z5  

T

a

conic RF35, 0.020

″

,

ε

= 3.5  

r

Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz  

Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values  

Part  

Description  

Part Number  

C32225X5R1H225MT  

C1206C104K1KAC  

08051J0R5BS  

Manufacturer  

C1, C2, C3, C4  

2.2

μ

F Chip Capacitors  

TDK  

Kemet  

AVX  

C5, C13  

C6, C7  

C8  

100 nF Chip Capacitors  

0.5 pF Chip Capacitors  

6.8 pF Chip Capacitor  

08051J6R8BS  

AVX  

C9  

2.2 pF Chip Capacitor  

08051J2R2BS  

AVX  

C10  

1 pF Chip Capacitor  

08051J1R0BS  

AVX  

C11, C12  

C14  

5.6 pF Chip Capacitors  

0.3 pF Chip Capacitor  

08051J5R6BS  

AVX  

ATC100B0R3BT500XT  

ATC100B0R5BT500XT  

3224W

–

–

1

–

–

502E  

ATC  

C15  

0.5 pF Chip Capacitor  

ATC  

R1, R2  

5 k

Ω

Potentiometer CMS Cermet Multi

–

–

turn  

Bourns  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

4

V

V

DS2  

DS1  

C2  

C11  

C9  

C1  

MW6IC2420  

Rev. 0  

C10  

C6  

C7  

C8  

C14  

C15  

C13  

C5  

C4  

C12  

C3  

R1  

R2  

V

GS  

Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

5

TYPICAL CHARACTERISTICS — 2450 MHz  

24  

40  

35  

30  

25  

V

= 32 V  

30 V  

DD  

23  

22  

21  

28 V  

G

ps  

20  

15  

20  

19  

PAE  

28 V  

32 V

 

30 V  

10  

18  

17  

16  

I

I

= 210 mA  

= 370 mA  

DQ1  

DQ2  

5

0

f = 2450 MHz  

1

10  

, OUTPUT POWER (WATTS) CW  

50  

P

out  

Figure 5. Power Gain and Power Added Efficiency  

versus CW Output Power as a Function of V

DD  

22  

40  

35  

30  

25  

21.5  

21  

G

ps  

20.5  

20  

15  

20  

19.5  

V

I

I

= 28 V  

= 210 mA  

= 370 mA  

DD  

DQ1  

DQ2  

10  

19  

18.5  

18  

5

0

PAE  

P

f = 2450 MHz  

0.5  

1

10  

50  

, OUTPUT POWER (WATTS) CW  

out  

Figure 6. Power Gain and Power Added  

Efficiency versus CW Output Power  

9

24  

10  

23  

22  

21  

20  

19  

8

10  

I

= 620 mA  

DQ  

1st Stage  

580 mA  

7

10  

540 mA  

6

10  

2nd Stage  

18  

17  

16  

5

G

10  

ps  

V

= 28 V  

DD  

f = 2450 MHz  

4

10  

0.5  

1

10  

, OUTPUT POWER (WATTS) CW  

50  

90  

110  

130  

150  

170  

190  

210  

230  

250  

P

T , JUNCTION TEMPERATURE (

°

C)  

J

out  

This above graph displays calculated MTTF in hours when the device  

is operated at V

 

= 28 Vdc, P

 

= 20 W Avg., and PAE = 27%.  

Figure 7. Power Gain and Power Added  

Efficiency versus CW Output Power as a  

Function of Total I

DQ  

DD  

out  

Software & Tools/Development Tools/Calculators to access MTTF  

calculators by product.  

Figure 8. MTTF versus Junction Temperature  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

6

Z =

 

50

Ω  

o

Z

load  

Z

source  

f = 2450 MHz  

f = 2450 MHz  

V

= 28 Vdc, I  

= 210 mA, I

 

= 370 mA, P

 

= 20 W CW  

DQ2 out  

DD  

DQ1  

f

Z

Z

load  

source  

MHz  

Ω

Ω

2450  

54.8 + j16.6  

0.42 + j4.3  

Z

Z

=

T

e

st circuit impedance as measured from  

gate to ground.  

source  

=

T

e

st circuit impedance as measured  

from drain to ground.  

load  

Output  

Matching  

Network  

Device  

Under  

Test  

Input  

Matching  

Network  

Z

Z

source  

load  

Figure 9. Series Equivalent Source and Load Impedance  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

7

PACKAGE DIMENSIONS  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

8

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

9

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

10  

PRODUCT DOCUMENTATION  

Refer to the following documents to aid your design process.  

Application Notes  

•

•

•

•

•

AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages  

AN1955: Thermal Measurement Methodology of RF Power Amplifiers  

AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family  

AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family  

AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over

–

–

Molded Plastic Packages  

Engineering Bulletins  

EB212: Using Data Sheet Impedances for RF LDMOS Devices  

•

REVISION HISTORY  

The following table summarizes revisions to this document.  

Revision  

Date  

Description  

0

1

Mar. 2007  

Apr. 2008  

•

Initial Release of Data Sheet  

•

•

Changed 220

°

C to 225

°

C in Capable Plastic Package bullet, p. 1  

Added Footnote 1 to Quiescent Current

T

e

mperature bullet under Features section and to callout in Fig. 1,  

Functional Block Diagram, p. 1  

•

•

Added Case Operating

T

e

mperature limit to the Maximum Ratings table and set limit to 150

°

C, p. 2  

Operating Junction

T

e

mperature increased from 200

°

C to 225

°

C in Maximum Ratings table and related  

“Continuous use at maximum temperature will affect MTTF” footnote added, p. 2  

•

Replaced Case Outline 1329

–

–

09, Issue L, with 1329

–

–

09, Issue M, p. 8

–

–

10. Added pin numbers 1 through  

17.  

2

3

Feb. 2009  

Dec. 2010  

•

•

Changed Storage

T

e

mperature Range in Max Ratings table from

–

–

65 to +200 to

–

–

65 to +150 for  

standardization across products, p. 2  

Modified data sheet to reflect RF

T

e

st Reduction described in Product and Process Change Notification  

number, PCN13232, p. 2  

•

Corrected data sheet to reflect RF

T

e

st Reduction described in Product and Process Change Notification  

number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable  

overlay, p. 1, 2  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

11  

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e

chnical Information Center, EL516  

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T

e

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T

e

chnical Information Center  

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ꢀ

Freescale Semiconductor, Inc. 2007

–

–

2010. All rights reserved.  

MW6IC2420NBR1  

RF Device Data  

Freescale Semiconductor  

Document Number: MW6IC2420N  

1

R

2

ev. 3, 12/2010