NXP-Semicon-MW6S010NR1
| Part # | NXP-Semicon-MW6S010NR1 |
Download  | NXP-Semicon-MW6S010NR1 |
Document Number: MW6S010N
Rev. 5, 6/2009
Freescale Semiconductor
T
e
chnical Data
RF Power Field Effect Transistors
N-
C
hannel Enhancemen
t
–
M
ode Lateral MOSFE
T
s
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
MW6S010NR1
MW6S010GNR1
•
Typical Tw
o
–
T
o
ne Performance at 960 MHz: V
DD
= 28 Volts, I
DQ
= 125 mA,
P
out
= 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD —
–
3
7 dBc
45
0
–
1
500 MHz, 10 W, 28 V
LATERAL
N
–
C
HANNEL
BROADBAND RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Larg
e
–
S
ignal Impedance Parameters
•
O
n
–
C
hip RF Feedback for Broadband Stability
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
CASE 126
5
–
0
9, STYLE 1
T
O
–
2
7
0
-2
PLASTIC
MW6S010NR1
•
225
°
C Capable Plastic Package
•
RoHS Compliant
•
In
T
a
pe and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
CASE 1265
A
–
0
3, STYLE 1
T
O
–
2
7
0
-2
G
ULL
PLASTIC
MW6S010GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
–
0
.5, +68
–
0
.5, +12
– 65 to +150
150
Unit
Vdc
Vdc
°
C
Drai
n
–
S
ource Voltage
Gat
e
–
S
ource Voltage
Storage
T
e
mperature Range
Case Operating
T
e
mperature
V
DSS
V
GS
T
stg
T
°
C
C
(1,2)
Operating Junction
T
e
mperature
T
225
°
C
J
Table 2. Thermal Characteristics
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°
C/W
Case
T
e
mperature 80
°
C, 10 W PEP
2.85
1. Continuous
use at maximum temperature will affect MTT
F
.
2. MTTF
calculator available at http://www.freescale.com/rf. Select Software &
T
o
ols/Development
T
o
ols/Calculators to access
MTTF calculators by product.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes – AN1955.
©
Freescale Semiconductor, Inc., 200
5
–
2
006, 200
8
–
2
009. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
1A
Human Body Model (per JESD2
2
–
A
114)
Machine Model (per EIA/JESD2
2
–
A
115)
Charge Device Model (per JESD2
2
–
C
101)
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD2
2
–
A
113, IPC/JEDEC
J
–
S
T
D
–
0
20
3
260
°
C
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
68 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gat
e
–
S
ource Leakage Current
1
(V =
5 Vdc, V
= 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V =
10 Vdc, I
= 100
μ
Adc)
V
V
1.5
2
2.3
3.1
3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 125 mAdc, Measured in Functional
T
e
st)
DD
D
Drai
n
–
S
ource O
n
–
V
oltage
(V =
10 Vdc, I
= 0.3 Adc)
V
—
0.27
0.35
GS
D
Dynamic Characteristics
Reverse Transfer Capacitance
(V =
28 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
—
—
—
0.32
10
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V =
28 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
23
iss
(V =
28 Vdc, V
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 125 mA, P
= 10 W PE
P
, f =
9
60 MHz, Tw
o
–
T
o
ne
T
e
st,
out
DD
DQ
100 kHz
T
o
ne Spacing
Power Gain
G
17.5
31
18
32
20.5
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
IMD
IRL
—
–
3
7
–
1
8
–
3
3
–
1
0
dBc
dB
Input Return Loss
—
Typical Performances
(In Freescale 450 MHz Demo Board, 50
ο
hm system) V
= 28 Vdc, I
= 150 mA, P
= 10 W PE
P
,
4
2
0
–
4
70 MHz,
DD
DQ
out
Tw
o
–
T
o
ne
T
e
st, 100 kHz
T
o
ne Spacing
Power Gain
G
—
—
—
—
20
—
—
—
—
dB
%
ps
Drain Efficiency
η
33
D
Intermodulation Distortion
Input Return Loss
IMD
IRL
–
4
0
–
1
0
dBc
dB
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
2
C11
C12
B1
V
V
BIAS
SUPPLY
+
+
+
+
+
C18
C19
C2
C4
C6
C7
C3
C15
C16
C10
C13
Z5
L1
RF
OUTPUT
DUT
R1
Z6
Z7
RF
INPUT
Z1
Z2
Z3
Z4
C20
C14
C17
C1
C5
C8
C9
Z1
Z2
Z3
Z4
0.073
″
x 0.223
″
Microstrip
0.112
″
x 0.070
″
Microstrip
0.213
″
x 0.500
″
Microstrip
0.313
″
x 1.503
″
Microstrip
Z5
Z6
Z7
0.313
″
x 0.902
″
Microstrip
0.073
″
x 1.080
″
Microstrip
0.073
″
x 0.314
″
Microstrip
PCB
Rogers ULTRALAM 2000, 0.031
″
,
ε
= 2.55
r
Figure 1. MW6S010NR1(GNR1) Test Circuit Schematic — 900 MHz
Table 6. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fai
r
–
R
ite
B1
Ferrite Bead
C1, C6, C11, C20
C2, C18, C19
C3, C16
47 pF Chip Capacitors
ATC100B470JT500XT
T491D226K035AT
222
2
–
1
3
6
–
6
8221
CDR33BX104AKWS
272915L
ATC
22
μ
F
,
3
5 V
T
a
ntalum Capacitors
220
μ
F
,
6
3 V Electrolytic Capacitors, Radial
0.1
μ
F Chip Capacitors
Kemet
Vishay
Kemet
Johanson
ATC
C4, C15
C5, C8, C17
C7, C12
0.
8
–
8
.0 pF Variable Capacitors, Gigatrim
24 pF Chip Capacitors
ATC100B240JT500XT
ATC100B6R8JT500XT
ATC100B7R5JT500XT
A04
T
-5
C9, C10, C13
C14
6.8 pF Chip Capacitors
ATC
7.5 pF Chip Capacitor
ATC
L1
12.5 nH Inductor
Coilcraft
Vishay
R1
1 k
Ω,
1/4 W Chip Resistor
CRCW12061001FKEA
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
3
C3
C18
C7
C4
C16
C15
C10
C6
B1
C2
C11
C13
C19
C12
L1
R1
C20
C9
C1
C17
C14
C5
C8
MW6S010N
Figure 2. MW6S010NR1(GNR1) Test Circuit Component Layout — 900 MHz
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
— 900 MHz
−8
48
44
40
η
D
−10
−12
−14
−16
IRL
36
32
28
24
20
16
V
= 28 Vdc, P
= 10 W (Avg.)
out
= 125 mA, 100 kHz Tone Spacing
DD
I
DQ
−18
−20
−22
IMD
G
ps
−24
−26
910
920
930
940
950
960
970
f, FREQUENCY (MHz)
Figure 3. Tw
o
–
T
one Wideband Performance
@ P
out
= 10 Watts
20
19
−10
I
= 190 mA
125 mA
DQ
V
= 28 Vdc, I
= 125 mA
DD DQ
3rd Order
5th Order
f = 945 MHz, Two−Tone Measurements
100 kHz Tone Spacing
−20
−30
−40
−50
18
17
90 mA
7th Order
V
= 28 Vdc, f = 945 MHz
16
15
DD
−60
−70
Two−Tone Measurements
100 kHz Tone Spacing
0.1
1
10
100
0.1
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
out
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 4. Tw
o
–
T
one Power Gain versus
Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
−15
48
46
44
42
V
I
= 28 Vdc, P
= 10 W (Avg.)
out
= 125 mA, Two−Tone Measurements
DD
Ideal
−20
−25
−30
−35
−40
−45
−50
−55
DQ
P3dB = 43.14 dBm (20.61 W)
(f1+f2)/2 = Center Frequency = 945 MHz
P1dB = 42.23 dBm (16.71 W)
3rd Order
Actual
5th Order
7th Order
V
= 28 Vdc, I
= 125 mA
DQ
DD
40
38
Pulsed CW, 8
μ
sec(on), 1 msec(off)
f = 945 MHz
19
21
23
25
27
29
0.1
1
10
100
TWO−TONE SPACING (MHz)
P ,
INPUT POWER (dBm)
in
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
— 900 MHz
50
40
30
20
−10
−20
−30
−40
V
= 28 Vdc
= 125 mA
DD
I
DQ
f = 945 MHz
G
ps
η
D
10
0
−50
−60
ACPR
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 8. Singl
e
–
C
arrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
20
19
50
40
30
20
−30
_
C
25
_
C
T =
−30
_
C
C
85
_
C
G
ps
η
D
25
_
C
85
_
C
18
17
16
15
V
= 28 Vdc
= 125 mA
10
0
DD
I
DQ
f = 945 MHz
0.1
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
24
5
19
I
= 125 mA
f = 945 MHz
DQ
20
16
12
8
0
S21
18
17
−5
−10
−15
16
15
S11
V
P
= 28 Vdc
= 10 W CW
DD
out
28 V
32 V
4
0
−20
−25
V
= 24 V
DD
I
= 125 mA
DQ
0
2
4
6
8
10
12
14
16
500
600
700
800
900
1000
1100
1200
f, FREQUENCY (MHz)
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain versus Output Power
Figure 11. Broadband Frequency Response
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
8
7
6
10
10
10
5
4
10
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
°
C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V
= 28 Vdc, P
= 10 W PE
P
,
a
nd
η
= 32%.
DD
out
D
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
7
Z =
25
Ω
o
f = 980 MHz
f = 980 MHz
Z
source
Z
load
f = 800 MHz
f = 800 MHz
V
= 28 Vdc, I
= 125 mA, P
= 10 W PEP
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
800
820
840
860
880
900
920
940
960
980
3.1 + j1.9
2.8 + j1.7
10.1 + j2.3
8.3 + j2.5
8.2 + j3.3
9.8 + j4.8
10.6 + j5.6
9.5 + j5.5
10.1 + j5.9
11.0 + j6.4
11.8 + j6.6
12.1 + j7.1
2.7 + j2.2
3.1 + j3.4
3.3 + j3.8
2.9 + j3.7
2.8 + j4.4
3.0 + j4.7
3.2 + j4.9
3.6 + j5.2
Z
Z
=
T
e
st circuit impedance as measured from
gate to ground.
source
=
T
e
st circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance — 900 MHz
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
8
T1
R1
V
BIAS
+
C1
R2
B1
B2
R5
V
SUPPLY
+
+
C13
C14
C15
C2
C3
C4
R3
T2
R4
R6
L1
RF
OUTPUT
DUT
Z6
Z7
Z8
RF
INPUT
Z1
Z2
Z3
Z4
Z5
C10
C12
C11
C9
C6
C5
C7
C8
Z1
Z2
Z3
0.540
″
x 0.080
″
Microstrip
0.365
″
x 0.080
″
Microstrip
0.225
″
x 0.080
″
Microstrip
0.440
″
x 0.080
″
Microstrip
Z5
Z6
Z8
0.475
″
x 0.330
″
Microstrip
0.475
″
x 0.325
″
Microstrip
1.250
″
x 0.080
″
Microstrip
Z4, Z7
PCB
Rogers ULTRALAM 2000, 0.030
″
,
ε
= 2.55
r
Figure 14. MW6S010NR1(GNR1) Test Circuit Schematic — 450 MHz
Table 7. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 450 MHz
Part
Description
Part Number
2743019447
Manufacturer
B1, B2
C1
Ferrite Bead
Fai
r
–
R
ite
1
μ
F
,
3
5 V
T
a
ntalum Capacitor
22
μ
F
,
3
5 V
T
a
ntalum Capacitors
0.1
μ
F Chip Capacitors
330 pF Chip Capacitors
4.3 pF Chip Capacitor
0.
6
–
8
.0 pF Variable Capacitors
4.7 pF Chip Capacitors
39
μ
H Chip Inductor
T491C105K050AT
T491X226K035AT
C1210C104K5RAC
ATC700A331JT150XT
ATC100B4R3JT500XT
27291SL
Kemet
C2, C15
C3, C14
Kemet
Kemet
C4, C9, C10, C13
ATC
C5
ATC
C6, C11
Johanson
ATC
C7, C8, C12
ATC100B4R7JT500XT
IS
C
–
1
210
L1
Vishay
R1
R2
R3
R4
R5
R6
T1
T2
10
Ω
Chip Resistor
CRCW080510R0FKEA
CRCW08051001FKEA
CRCW08051201FKEA
CRCW08052201FKEA
1224W
Vishay
1 k
Ω
Chip Resistor
Vishay
1.2 k
Ω
Chip Resistor
Vishay
2.2 k
Ω
Chip Resistor
Vishay
5 k
Ω
Potentiometer
Bourns
1 k
Ω
Chip Resistor
CRCW12061001FKEA
LP2951CDMR2G
BC847ALT1G
Vishay
5 Volt Regulator, Micro 8
NPN Transistor, SO
T
–
2
3
On Semiconductor
On Semiconductor
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
9
R2 R1
C1
R5
C4
T1
R3
C15
B1
B2
T2
R4
C3
C14
C2
C13
C5
C6
C12
C11
L1
C10
C9
R6
C7
C8
MW6S010N 450 MHz
Figure 15. MW6S010NR1(GNR1) Test Circuit Component Layout — 450 MHz
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
10
TYPICAL CHARACTERISTICS
— 450 MHz
20.4
20.2
20
37
34
G
ps
31
28
19.8
η
D
V
= 28 Vdc, P
= 3 W (Avg.), I
= 150 mA
out DQ
DD
25
19.6
19.4
19.2
19
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−6
−40
−9
−45
−50
−55
ACPR
IRL
−12
−15
−18
−21
18.8
18.6
18.4
ALT1
−60
−65
400 410 420 430 440 450 460 470 480 490 500
f, FREQUENCY (MHz)
Figure 16.
2
–
C
arrier
W
–
C
DMA Broadband Performance @ P
out
= 3 Watts Avg.
19
18.8
18.5
18.3
55
50
G
ps
45
40
η
D
V
= 28 Vdc, P
= 7.5 W (Avg.), I
= 150 mA
out DQ
DD
35
18
17.8
17.5
17.3
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−4
−30
−6
−35
−40
−45
ACPR
−8
IRL
−10
−12
−14
17
16.8
16.5
ALT1
−50
−55
400 410 420 430 440 450 460 470 480 490 500
f, FREQUENCY (MHz)
Figure 17.
2
–
C
arrier
W
–
C
DMA Broadband Performance @ P
out
= 7.5 Watts Avg.
30
0
−10
V
= 28 Vdc, I
= 150 mA,
DQ
DD
−20
−30
−40
−50
−60
f = 450 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
25
20
15
−5
S11
S21
ACPR
−10
ALT1
ALT2
−15
−20
−25
V
P
= 28 Vdc
= 10 W
= 150 mA
DD
out
10
5
−70
−80
I
DQ
0.1
1
10
50 100
150 200
250 300 350 400 450 500 550 600 650
P
, OUTPUT POWER (WATTS) AVG.
out
f, FREQUENCY (MHz)
Figure 18. Broadband Frequency Response
Figure 19. Singl
e
–
C
arrier
N
–
C
DMA ACPR, ALT1
and ALT2 versus Output Power
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
11
Z =
25
Ω
o
f = 500 MHz
Z
source
f = 500 MHz
Z
load
f = 400 MHz
f = 400 MHz
V
= 28 Vdc, I
= 150 mA, P
= 10 W PEP
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
400
420
440
460
480
500
9.0 + j3.8
8.8 + j5.4
15.0 + j1.4
14.3 + j3.3
15.0 + j4.7
16.3 + j7.3
16.4 + j11.1
16.9 + j12.7
9.6 + j6.6
10.6 + j9.5
10.7 + j12.6
11.5 + j13.9
Z
Z
=
T
e
st circuit impedance as measured from
gate to ground.
source
load
=
T
e
st circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 20. Series Equivalent Source and Load Impedance — 450 MHz
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
12
PACKAGE DIMENSIONS
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
13
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
14
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
15
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
16
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
17
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
18
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•
AN1949: Mounting Method for the MHVIC910HR2 (PF
P
–
1
6) and Similar Surface Mount Packages
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•
AN3789: Clamping of High Power RF Transistors and RFICs in Ove
r
–
M
olded Plastic Packages
Engineering Bulletins
•
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
Electromigration MTTF Calculator
•
RF High Power Model
For Software and
T
o
ols, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software &
T
o
ols tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
Dec. 2008
•
•
Changed Storage
T
e
mperature Range in Max Ratings table from
–
6
5 to +175 to
–
6
5 to +150 for
standardization across products, p. 1
Removed
T
o
tal Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
•
•
Added Case Operating
T
e
mperature limit to the Maximum Ratings table and set limit to 150
°
C, p. 1
Operating Junction
T
e
mperature increased from 200
°
C to 225
°
C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200
°
C to 225
°
C in
Capable Plastic Package bullet, p. 1
•
•
•
•
•
•
Corrected V
to V
in the RF test condition voltage callout for V
T
e
st”, On Characteristics table, p. 2
and added “Measured in Functional
GS(Q)
DS
DD
Corrected C
test condition to indicate AC stimulus on the V
connection versus the V
connection,
iss
GS
DS
Dynamic Characteristics table, p. 2
Updated Part Numbers in
T
a
bles 6, 7, Component Designations and Values, to RoHS compliant part
numbers, p. 3, 9
Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
2
Replaced Fig. 12, MTTF versus Junction
T
e
mperature with updated graph. Removed Amps
and listed
operating characteristics and location of MTTF calculator for device, p. 7
Replaced Case Outline 126
5
–
0
8 with 126
5
–
0
9, Issue K, p. 1, 1
3
–
1
5. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Mi
n
–
M
ax .29
0
–
.
320 to .290 Min; E3 changed from Mi
n
–
M
ax .15
0
–
.
180 to .150 Min). Added JEDEC
Standard Package Number.
•
Replaced Case Outline 1265
A
–
0
2 with 1265
A
–
0
3, Issue C, p. 1, 1
6
–
1
8. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Mi
n
–
M
ax .29
0
–
.
320 to .290 Min; E3
changed from Mi
n
–
M
ax .15
0
–
.
180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gul
l
–
w
ing foot from 4.9
0
–
5
.06 Mi
n
–
M
ax to 0.4
6
–
0
.61 Mi
n
–
M
ax. Added JEDEC Standard Package Number.
•
•
Added Product Documentation and Revision History, p. 19
5
June 2009
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
•
•
Added AN3789, Clamping of High Power RF Transistors and RFICs in Ove
r
–
M
olded Plastic Packages to
Product Documentation, Application Notes, p. 19
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 19
MW6S010NR1 MW6S010GNR1
RF Device Data
Freescale Semiconductor
19
How to Reach Us:
Home Page:
Web Support:
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
T
e
chnical Information Center, EL516
2100 East Elliot Road
T
e
mpe, Arizona 85284
1-
8
0
0
–
5
2
1
–
6
274 or +
1
–
4
8
0
–
7
6
8
–
2
130
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
T
e
chnical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO
T
o
wer 15F
1-8-
1
, Shim
o
–
M
eguro, Megur
o
–
k
u,
T
o
kyo 15
3
–
0
064
Japan
0120 191014 or +81 3 5437 9125
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
Semiconductor was negligent regarding the design or manufacture of the part.
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1-
8
0
0
–
4
4
1
–
2
447 or +
1
–
3
0
3
–
6
7
5
–
2
140
Fax: +
1
–
3
0
3
–
6
7
5
–
2
150
Freescale
t
and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ
Freescale Semiconductor, Inc. 200
5
–
2
006, 200
8
–
2
009. All rights reserved.
Document Number: MW6S010N
R
ev. 5, 6/2009
