NXP-Semicon-MW7IC18100GNR1
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Document Number: MW7IC18100N
Rev. 3, 3/2009
Freescale Semiconductor
T
e
chnical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC18100N wideband integrated circuit is designed with o
n
–
c
hip
matching that makes it usable from 1805 to 2050 MHz. This mult
i
–
s
tage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulations including GSM EDGE and CDMA.
MW7IC18100NR1
MW7IC18100GNR1
MW7IC18100NBR1
Final Application
1990 MHz, 100 W, 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ1
= 180 mA, I
DQ2
= 1000 mA,
P
out
= 100 Watts CW, 180
5
–
1
880 MHz or 193
0
–
1
990 MHz
Power Gain — 30 dB
Power Added Efficiency — 48%
INTEGRATED POWER AMPLIFIERS
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 215 mA, I
DQ2
800 mA, P
out
= 40 Watts Avg., 180
5
–
1
880 MHz or 193
0
–
1
990 MHz
Power Gain — 31 dB
=
CASE 161
8
–
0
2
T
O
–
2
70 W
B
–
1
4
PLASTIC
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset =
–
6
3 dBc
Spectral Regrowth @ 600 kHz Offset =
–
8
0 dBc
EVM — 1.5% rms
MW7IC18100NR1
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
CASE 162
1
–
0
2
T
O
–
2
70 W
B
–
1
4 GULL
PLASTIC
Output Power
•
Stable into a 5:1 VSWR. All Spurs Below
–
6
0 dBc @ 1 mW to 120 Watts
MW7IC18100GNR1
CW P
out
.
Features
•
Characterized with Series Equivalent Larg
e
–
S
ignal Impedance Parameters
and Common Source Scattering Parameters
CASE 161
7
–
0
2
T
O
–
2
72 W
B
–
1
4
PLASTIC
•
O
n
–
C
hip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current
T
e
mperature Compensation with
Enable/Disable Function
(1)
MW7IC18100NBR1
•
Integrated ESD Protection
•
225
°
C Capable Plastic Package
•
RoHS Compliant
•
In
T
a
pe and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
NC
1
2
V
DS1
NC
NC
NC
3
4
5
V
14
13
RF /V
DS1
out DS2
RF
RF
6
7
8
9
10
11
12
in
in
RF
RF /V
out DS2
in
NC
RF /V
out DS2
V
GS1
V
GS2
V
V
GS1
Quiescent Current
Temperature Compensation
V
DS1
NC
(1)
GS2
(
T
o
p View)
Note: Exposed
backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer
to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf. Select Documentation/Application Notes – AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 200
7
–
2
009. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
–
0
.5, +65
–
0
.5, +6
–
6
5 to +150
150
Unit
Vdc
Vdc
°
C
Drai
n
–
S
ource Voltage
V
DSS
Gat
e
–
S
ource Voltage
V
GS
Storage
T
e
mperature Range
Case Operating
T
e
mperature
Operating Junction
T
e
mperature
T
stg
T
C
°
C
(1,2)
T
J
225
°
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
GSM Application
(P =
100 W CW)
out
R
°
C/W
θ
JC
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 180 mA
= 1000 mA
2.0
0.51
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD2
2
–
A
114)
Machine Model (per EIA/JESD2
2
–
A
115)
Charge Device Model (per JESD2
2
–
C
101)
1 (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 2
2
–
A
113, IPC/JEDEC
J
–
S
T
D
–
0
20
3
260
°
C
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, P
= 100 W CW, I
= 180 mA, I
= 1000 mA,
DQ2
DD
out
DQ1
f = 1990 MHz.
Power Gain
G
27
—
45
30
–
1
5
48
31
–
1
0
—
dB
ps
Input Return Loss
Power Added Efficiency
IRL
PAE
dB
%
P
out
@ 1 dB Compression Point, CW
P1dB
100
112
—
W
Typical GSM EDGE Performances
(In Freescale GSM EDGE
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 215 mA, I
= 800 mA,
DQ2
DD
DQ1
P
out
= 40 W Avg., 180
5
–
1
880 MHz or 193
0
–
1
990 MHz EDGE Modulation.
Power Gain
G
—
—
—
—
—
31
35
—
—
—
—
—
dB
%
ps
Power Added Efficiency
PAE
EVM
SR1
SR2
Error Vector Magnitude
1.5
–
6
3
–
8
0
% rms
dBc
dBc
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
1. Continuous
use at maximum temperature will affect MTT
F
.
2. MTTF
calculator available at http://www.freescale.com/rf. Select Software &
T
o
ols/Development
T
o
ols/Calculators to access
MTTF calculators by product.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes – AN1955.
4. Measurement
made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
C
Characteristic
Typical Performances
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
Symbol
Min
Typ
= 1000 mA, 193
0
–
1
990 MHz Bandwidth
DQ2
Max
Unit
= 180 mA, I
—
F
DD
DQ1
Gain Flatness in 60 MHz Bandwidth @ P
= 100 W CW
G
0.37
—
—
dB
out
Average Deviation from Linear Phase in 60 MHz Bandwidth
Φ
—
0.502
°
@ P
= 100 W CW
out
Average Group Delay @ P
= 100 W CW, f = 1960 MHz
Delay
—
—
2.57
—
—
ns
out
Par
t
–
t
o
–
P
art Insertion Phase Variation @ P
= 100 W CW,
ΔΦ
63.65
°
out
f = 1960 MHz, Six Sigma Window
Gain Variation over
T
e
mperature
(-
3
0
°
C to +85
°
C)
Δ
G
—
0.048
0.004
—
—
dB/
°
C
Output Power Variation over
T
e
mperature
Δ
P1dB
—
dBm/
°
C
(-
3
0
°
C to +85
°
C)
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
3
+
C17
V
DD1
V
DD2
C1
1
2
NC
DUT
C10
C3
C6
C7
Z8
3 NC
4 NC
5 NC
6
Z3
Z4
RF
INPUT
RF
OUTPUT
14
13
C12
C14
Z13 Z14
Z2
Z5
Z6
Z10
Z11 Z12
Z15
Z16
Z1
Z7
C11
7
C5
NC
8
9
V
GG1
R1
R2
C13
C15
Quiescent Current
Temperature
Compensation
Z9
10
11
12
V
GG2
NC
C4
C8
C9
C16
C2
Z1
Z2, Z5
Z3
Z4
Z6
Z7
Z8, Z9
Z10
0.083
″
x 0.505
″
Microstrip
0.083
″
x 0.552
″
Microstrip
0.083
″
x 0.252
″
Microstrip
0.083
″
x 0.174
″
Microstrip
0.083
″
x 1.261
″
Microstrip
0.060
″
x 0.126
″
Microstrip
0.080
″
x 1.569
″
Microstrip
0.880
″
x 0.224
″
Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.880
″
x 0.256
″
Microstrip
0.215
″
x 0.138
″
Microstrip
0.215
″
x 0.252
″
Microstrip
0.083
″
x 0.298
″
Microstrip
0.083
″
x 0.810
″
Microstrip
0.083
″
x 0.250
″
Microstrip
Arlon CuClad 250G
X
–
0
30
0
–
5
5
–
2
2, 0.030
″
,
ε
= 2.55
r
Figure 3. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Schematic — 1900 MHz
Table 6. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1900 MHz
Part
C1, C2, C3, C4, C5
C6, C7, C8, C9
C10, C11
C12, C13
C14
Description
Part Number
ATC100B6R8BT500XT
GRM55DR61H106KA88L
ATC100B0R2BT500XT
ATC100B0R5BT500XT
ATC100B0R8BT500XT
ATC100B1R5BT500XT
C1206C225K4RAC
Manufacturer
6.8 pF Chip Capacitors
ATC
10
μ
F
,
5
0 V Chip Capacitors
0.2 pF Chip Capacitors
Murata
ATC
0.5 pF Chip Capacitors
ATC
0.8 pF Chip Capacitor
ATC
C15
1.5 pF Chip Capacitor
ATC
C16
2.2
μ
F
,
1
6 V Chip Capacitor
470
μ
F
,
6
3 V Electrolytic Capacitor, Radial
10 K
Ω
, 1/4 W Chip Resistors
Kemet
Illinois Capacitor
Vishay
C17
477KXM063M
R1, R2
CRCW12061001FKEA
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
4
C17
C3
C10
C11
C6 C7
C1
C12
C13
C15
C5
C14
MW7IC18100N
Rev. 2
C2
C8 C9
R1
R2
C4
C16
Figure 4. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Layout — 1900 MHz
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 1900 MHz
33
32
55
50
PAE
45
40
35
31
30
G
ps
−5
V
= 28 Vdc, P
= 100 W CW
out
DD
−10
−15
−20
29
28
27
I
= 180 mA, I
= 1000 mA
DQ1
DQ2
IRL
30
25
1880 1900
1920 1940
1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss and Power Added
Efficiency versus Frequency @ P
out
= 100 Watts CW
32
60
G
ps
31
30
29
28
27
50
40
PAE
−5
30
20
10
0
V
= 28 Vdc, P
= 40 W Avg.
out
DD
I
= 215 mA, I
DQ2
EDGE Modulation
= 800 mA
DQ1
−10
−15
−20
IRL
EVM
26
1880 1900
1920 1940
1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 6. Power Gain, Input Return Loss, EVM and Power
Added Efficiency versus Frequency @ P
out
= 40 Watts Avg.
32
31
30
34
I
= 1500 mA
DQ2
1250 mA
I
= 270 mA
DQ1
33
32
31
30
29
28
27
26
25
1000 mA
750 mA
225 mA
180 mA
29
28
27
500 mA
135 mA
90 mA
V =
28 Vdc, I
DD
f = 1960 MHz
= 180 mA
10
DQ1
26
25
V
DD
f = 1960 MHz
= 28 Vdc, I
= 1000 mA
DQ2
1
100
200
1
10
100
200
P ,
OUTPUT POWER (WATTS) CW
out
P ,
OUTPUT POWER (WATTS) CW
out
Figure 7. Tw
o
–
T
one Power Gain versus
Output Power @ I
DQ1
= 180 mA
Figure 8. Tw
o
–
T
one Power Gain versus
Output Power @ I
DQ2
= 1000 mA
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS — 1900 MHz
−10
−20
−30
−10
V
DD
f1 = 1960 MHz, f2 = 1960.1 MHz
= 28 Vdc, I
= 180 mA
V
DD
f1 = 1960 MHz, f2 = 1960.1 MHz
= 28 Vdc, I
= 1000 mA
DQ1
DQ2
Two−Tone Measurements, 100 kHz Tone Spacing
Two−Tone Measurements, 100 kHz Tone Spacing
−20
−30
I
= 500 mA
DQ2
I
= 90 mA
DQ1
750 mA
135 mA
1500 mA
180 mA
−40
−50
−60
−40
−50
−60
225 mA
1250 mA
1000 mA
270 mA
1
10
, OUTPUT POWER (WATTS) PEP
100
200
1
10
, OUTPUT POWER (WATTS) PEP
out
100
200
P
out
P
Figure 9. Third Order Intermodulation Distortion
versus Output Power @ I
DQ1
= 180 mA
Figure 10. Third Order Intermodulation Distortion
versus Output Power @ I
DQ2
= 1000 mA
0
0
−10
−20
−30
−40
−50
−60
−70
V
I
= 28 Vdc, P
= 80 W (PEP), I
= 215 mA
V
= 28 Vdc, I
= 180 mA
= 1000 mA, f1 = 1960 MHz, f2 = 1960.1 MHz
DD
out
DQ1
= 800 mA, Two−Tone Measurements
DD
DQ1
−10
DQ2
I
DQ2
Two−Tone Measurements, 100 kHz Tone Spacing
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
−30
IM3−U
IM3−L
−40
−50
IM5−U
3rd Order
IM5−L
IM7−U
−60
−70
−80
5th Order
IM7−L
7th Order
−80
1
10
, OUTPUT POWER (WATTS) PEP
100
400
0.1
1
10
P
out
TWO−TONE SPACING (MHz)
Figure 11. Intermodulation Distortion
Products versus Output Power
Figure 12. Intermodulation Distortion
Products versus Tone Spacing
40
35
30
25
20
15
10
60
50
40
30
20
10
0
58
57
56
55
54
Ideal
−30
_
C
P6dB = 51.74 dBm (149.27 W)
G
ps
T
= −30
_
C
C
25
_
C
P3dB = 51.32 dBm (135.51 W)
25
_
C
85
_
C
85
_
C
P1dB = 50.6 dBm (114.8 W)
53
52
51
50
49
Actual
V
= 28 Vdc
= 180 mA
= 1000 mA
DD
DQ1
DQ2
I
I
V
DD
= 28 Vdc, I
= 180 mA, I
= 1000 mA
DQ2
DQ1
PAE
Pulsed CW, 12
μ
sec(on), 1% Duty Cycle
f = 1960 MHz
f = 1960 MHz
48
16
17
18
19
20
21
22
23
24
25
26
1
10
100
200
P ,
INPUT POWER (dBm)
in
P ,
OUTPUT POWER (WATTS) CW
out
Figure 13. Pulsed CW Output Power versus
Input Power
Figure 14. Power Gain and Power Added
Efficiency versus Output Power
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS — 1900 MHz
5
31
30
I
I
= 180 mA
= 1000 mA
DQ1
V
= 28 Vdc
= 215 mA, I
DD1
DQ2
I
DQ1
EDGE Modulation
= 800 mA
DQ2
f = 1960 MHz
4
3
2
1
0
29
28
27
P
out
= 50 W Avg.
40 W Avg.
30 W Avg.
28 V
32 V
V
DD
= 24 V
100
0
50
150
200
1880 1900 1920 1940 1960 1980 2000 2020
2040
f, FREQUENCY (MHz)
P ,
OUTPUT POWER (WATTS) CW
out
Figure 16. EVM versus Frequency
Figure 15. Power Gain versus Output Power
−40
−50
−60
−70
−80
−55
−60
V
= 28 Vdc
= 215 mA, I
DD1
25
_
C
= −30
_
C
SR @ 400 kHz
P
= 50 W Avg.
out
I
= 800 mA
f = 1960 MHz, EDGE Modulation
DQ1
DQ2
T
C
40 W Avg.
30 W Avg.
−65
−70
−75
−80
−85
85
_
C
V
DD1
= 28 Vdc, V
DD2
= 215 mA, I
= 28 Vdc
= 815 mA
I
DQ1
DQ2
f = 1960 MHz, EDGE Modulation
30 W Avg.
50 W Avg.
40 W Avg.
SR @ 600 kHz
1880 1900
1920 1940
1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
1
10
, OUTPUT POWER (WATTS) AVG.
100
200
P
out
Figure 18. Spectral Regrowth at 400 kHz
versus Output Power
Figure 17. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−50
−60
−70
−80
−90
16
14
12
10
8
80
V
I
= 28 Vdc
= 215 mA, I
DD1
25
_
C
V
= 28 Vdc
T
= 85
_
C
DD1
DQ1
DQ2
C
70
60
50
40
30
= 800 mA
T
= 85
_
C
DQ1
DQ2
C
I
I
= 215 mA
= 800 mA
25
_
C
f = 1960 MHz, EDGE Modulation
f = 1960 MHz
EDGE Modulation
−30
_
C
−30
_
C
85
_
C
25
_
C
6
PAE
4
20
10
0
2
0
EVM
1
10
, OUTPUT POWER (WATTS) AVG.
100
200
1
10
P ,
OUTPUT POWER (WATTS) AVG.
out
100
200
P
out
Figure 20. EVM and Power Added Efficiency
versus Output Power
Figure 19. Spectral Regrowth at 600 kHz
versus Output Power
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
8
TYPICAL CHARACTERISTICS — 1900 MHz
32
28
24
20
16
12
0
36
S21
T
= −30
_
C
35
C
−5
34
33
32
31
30
29
S11
−10
−15
−20
−25
25
_
C
85
_
C
V
= 28 Vdc, P
= 40 W Avg.
out
DD
I
= 180 mA, I
= 1000 mA
DQ1
DQ2
V
= 28 Vdc
= 180 mA, I
DD
I
= 1000 mA
2000
DQ1
DQ2
1400
1600
1800
2200
2400
2600
1880 1900 1920 1940 1960 1980
2000 2020 2040
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 22. Power Gain versus Frequency
Figure 21. Broadband Frequency Response
9
10
8
10
1st Stage
7
10
2nd Stage
6
10
10
5
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
°
C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V
= 28 Vdc, P
= 100 W CW, and PAE = 48%.
DD
out
Software &
T
o
ols/Development
T
o
ols/Calculators to access MTTF
calculators by product.
Figure 23. MTTF versus Junction Temperature
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
9
GSM TEST SIGNAL
−10
−20
−30
Reference Power
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−40
−50
−60
−70
−80
−90
−100
400 kHz
400 kHz
600 kHz
600 kHz
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 24. EDGE Spectrum
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
10
Z =
50
Ω
o
f = 2040 MHz
f = 1880 MHz
f = 1880 MHz
Z
in
Z
load
f = 2040 MHz
V
DD1
= V
= 28 Vdc, I
= 180 mA, I
= 1000 mA, P
= 100 W CW
DQ2 out
DD2
DQ1
f
Z
W
Z
load
W
in
MHz
1880
1900
1920
1940
1960
1980
2000
2020
2040
67.48 – j17.89
60.03 – j20.86
53.65 – j21.94
48.13 – j21.94
43.52 – j21.22
39.60 – j20.00
36.14 – j18.52
33.19 – j16.57
30.96 – j14.58
2.324 – j3.239
2.234 – j3.105
2.135 – j2.965
2.037 – j2.818
1.936 – j2.666
1.851 – j2.509
1.765 – j2.355
1.669 – j2.193
1.559 – j2.012
Z
in
=
Device input impedance as measured from
gate to ground.
Z
load
=
T
e
st circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
T
e
st
Z
Z
in
load
Figure 25. Series Equivalent Input and Load Impedance — 1900 MHz
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
11
RF Device Data
Freescale Semiconductor
Table 7. Common Source
S
–
P
arameters (V
DD
= 28
V
,
I
DQ1
= 180 mA, I
DQ2
= 1000 mA, T
C
= 25
5
C, 50 Ohm System)
S
11
S
21
S
12
S
22
f
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
MHz
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
0.612
0.557
0.491
0.410
0.313
0.216
0.131
0.117
0.185
0.253
0.303
0.328
0.331
0.273
0.141
0.050
0.194
0.270
0.288
0.274
0.236
118.5
104.3
88.33
70.24
48.99
21.99
–
2
2.83
–
9
5.13
–
1
46.3
–
1
77.3
160.4
139.5
117.9
91.65
64.27
172.7
163.4
139.7
118.9
100.6
83.35
6.369
11.42
16.92
23.21
30.49
32.64
32.93
32.62
32.58
32.45
32.41
32.33
32.50
32.84
32.52
28.92
21.30
14.62
9.878
6.771
4.579
69.06
18.29
–
3
4.34
–
8
4.03
–
1
35.7
168.8
114.0
0.002
0.003
0.005
0.005
0.006
0.007
0.006
0.006
0.006
0.007
0.007
0.006
0.008
0.008
0.008
0.009
0.007
0.007
0.007
0.007
0.007
102.9
85.09
59.06
28.40
7.983
–
1
5.63
–
3
5.27
–
5
3.22
–
7
7.03
–
9
8.93
–
1
08.4
–
1
27.3
–
1
45.8
–
1
69.1
162.7
138.3
112.6
0.615
0.666
0.844
0.931
0.887
0.700
0.475
0.332
0.252
0.165
0.052
0.070
0.161
0.257
0.424
0.641
0.804
0.879
0.910
0.911
0.903
47.74
–
4
1.54
–
1
13.4
–
1
63.4
155.6
120.3
95.71
82.10
68.30
47.02
8.742
–
1
54.8
179.9
165.7
150.3
123.4
91.99
62.03
34.57
8.878
–
1
6.73
65.01
20.45
–
2
2.53
–
6
5.29
–
1
08.6
–
1
52.7
160.2
109.2
56.72
8.112
–
3
4.53
–
7
2.70
–
1
07.5
–
1
41.3
97.74
84.37
70.79
55.31
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
12
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — 1900 MHz
56
Ideal
P3dB = 52.72 dBm (187.06 W)
P2dB = 52.43 dBm (175 W)
55
54
53
52
P1dB = 51.93 dBm (155.89 W)
Actual
51
50
V
= 28 Vdc, I
= 180 mA
= 1000 mA, Pulsed CW
DD
DQ1
I
DQ2
12
μ
sec(on) 1% Duty Cycle
f = 1990 MHz
49
17
18
19
20
21
22
24
23
P ,
INPUT POWER (dBm)
in
NOTE: Load Pull
T
e
st Fixture Tuned for Peak Output Power @ 28 V
Test Impedances per Compression Level
Z
Z
load
source
Ω
Ω
P3dB
40.2 – j30.91
0.96 – j3.14
Figure 26. Pulsed CW Output Power
versus Input Power @ 28 V
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
13
+
C17
V
DD1
V
DD2
C1
1
2
NC
DUT
C10
C3
C6
C7
Z8
3 NC
4 NC
5 NC
6
Z3
Z4
RF
INPUT
RF
OUTPUT
14
13
C12
C14
Z13 Z14
Z2
Z5
Z6
Z10
Z11 Z12
Z15
Z16
Z1
Z7
C11
7
C5
NC
8
9
V
GG1
R1
R2
C13
C15
Quiescent Current
Temperature
Compensation
Z9
10
11
12
V
GG2
NC
C4
C8
C9
C16
C2
Z1
Z2, Z5
Z3
Z4
Z6
Z7
Z8, Z9
Z10
0.083
″
x 0.505
″
Microstrip
0.083
″
x 0.552
″
Microstrip
0.083
″
x 0.252
″
Microstrip
0.083
″
x 0.174
″
Microstrip
0.083
″
x 1.261
″
Microstrip
0.060
″
x 0.126
″
Microstrip
0.080
″
x 1.569
″
Microstrip
0.880
″
x 0.224
″
Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.880
″
x 0.256
″
Microstrip
0.215
″
x 0.138
″
Microstrip
0.215
″
x 0.252
″
Microstrip
0.083
″
x 0.298
″
Microstrip
0.083
″
x 0.810
″
Microstrip
0.083
″
x 0.250
″
Microstrip
Arlon CuClad 250G
X
–
0
30
0
–
5
5
–
2
2, 0.030
″
,
ε
= 2.55
r
Figure 27. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Schematic — 1800 MHz
Table 8. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1800 MHz
Part
C1, C2, C3, C4, C5
C6, C7, C8, C9
C10, C11
C12, C13
C14
Description
Part Number
ATC100B6R8BT500XT
GRM55DR61H106KA88L
ATC100B0R2BT500XT
ATC100B0R8BT500XT
ATC100B1R2BT500XT
ATC100B1R0BT500XT
C1206C225K4RAC
Manufacturer
6.8 pF Chip Capacitors
ATC
10
μ
F
,
5
0 V Chip Capacitors
0.2 pF Chip Capacitors
Murata
ATC
0.8 pF Chip Capacitors
ATC
1.2 pF Chip Capacitor
ATC
C15
1.0 pF Chip Capacitor
ATC
C16
2.2
μ
F
,
1
6 V Chip Capacitor
470
μ
F
,
6
3 V Electrolytic Capacitor, Radial
10 K
Ω
, 1/4 W Chip Resistors
Kemet
Illinois Capacitor
Vishay
C17
477KXM063M
R1, R2
CRCW12061001FKEA
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
14
C17
C3
C10
C11
C6 C7
C1
C12
C13
C14
C5
C15
MW7IC18100N
Rev. 2
C2
C8 C9
R1
R2
C4
C16
Figure 28. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Layout — 1800 MHz
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
15
TYPICAL CHARACTERISTICS — 1800 MHz
32
31
55
50
PAE
45
40
35
30
29
G
ps
V
= 28 Vdc, P
= 100 W CW
out
DD1
−10
−15
−20
−25
I
= 180 mA, I
= 1000 mA
DQ1
DQ2
28
27
26
IRL
30
25
1760 1780
1800 1820 1840 1860 1880 1900 1920 1940
f, FREQUENCY (MHz)
Figure 29. Power Gain, Input Return Loss and Power Added
Efficiency versus Frequency @ P
out
= 100 Watts CW
32
60
31
30
29
50
40
G
ps
V
I
= 28 Vdc, P
= 40 W Avg.
out
DD1
= 215 mA, I
= 800 mA
DQ1
DQ2
EDGE Modulation
−10
PAE
30
20
10
0
−15
−20
28
27
IRL
−25
−30
26
EVM
25
1760 1780
1800 1820 1840 1860 1880 1900
1920 1940
f, FREQUENCY (MHz)
Figure 30. Power Gain, Input Return Loss, EVM and Power
Added Efficiency versus Frequency @ P
out
= 40 Watts Avg.
33
36
I
= 270 mA
I
= 1500 mA
DQ1
V
DD
f = 1840 MHz
= 28 Vdc, I
= 1000 mA
DQ2
DQ2
35
34
33
32
31
30
29
28
1250 mA
32
31
30
29
28
27
225 mA
1000 mA
750 mA
180 mA
135 mA
500 mA
V
DD
f = 1840 MHz
= 28 Vdc, I
= 180 mA
10
DQ1
90 mA
27
26
1
100
200
1
10
P ,
OUTPUT POWER (WATTS) CW
out
100
200
P
out
, OUTPUT POWER (WATTS) CW
Figure 31. Tw
o
–
T
one Power Gain versus
Output Power @ I
DQ1
=180 mA
Figure 32. Tw
o
–
T
one Power Gain versus
Output Power @ I
DQ2
= 1000 mA
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
16
TYPICAL CHARACTERISTICS — 1800 MHz
−10
−20
−30
−10
V
DD
f1 = 1840 MHz, f2 = 1840.1 MHz
= 28 Vdc, I
= 180 mA
V
DD
f1 = 1840 MHz, f2 = 1840.1 MHz
= 28 Vdc, I
= 1000 mA
DQ1
DQ2
Two−Tone Measurements, 100 kHz Tone Spacing
Two−Tone Measurements, 100 kHz Tone Spacing
−20
−30
I
= 500 mA
DQ2
I
= 90 mA
DQ1
750 mA
270 mA
135 mA
−40
−50
−60
−40
−50
−60
1000 mA
1500 mA
180 mA
225 mA
1250 mA
1
10
, OUTPUT POWER (WATTS) PEP
100
200
1
10
P ,
OUTPUT POWER (WATTS) PEP
out
100
200
P
out
Figure 33. Third Order Intermodulation Distortion
versus Output Power @ I
DQ1
= 180 mA
Figure 34. Third Order Intermodulation Distortion
versus Output Power @ I
DQ2
= 1000 mA
0
−10
−20
−30
−40
−50
−60
V
I
= 28 Vdc, I
= 180 mA
= 1000 mA, f1 = 1840 MHz, f2 = 1840.1 MHz
DD
DQ1
V
I
= 28 Vdc, P
= 80 W (PEP), I
= 180 mA
DD
out
DQ1
= 1000 mA, Two−Tone Measurements
−10
−20
−30
DQ2
DQ2
(f1 + f2)/2 = Center Frequency of 1840 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
IM3−L
IM3−U
−40
−50
IM5−U
IM5−L
IM7−U
IM7−L
3rd Order
−60
−70
−80
5th Order
7th Order
1
10
100
400
0.1
1
10
50
P ,
OUTPUT POWER (WATTS) PEP
out
TWO−TONE SPACING (MHz)
Figure 35. Intermodulation Distortion
Products versus Output Power
Figure 36. Intermodulation Distortion
Products versus Tone Spacing
40
35
30
25
20
15
10
60
50
40
30
20
10
0
58
57
56
55
54
Ideal
−30
_
C
P6dB = 51.876 dBm (154.028 W)
G
T
= −30
_
C
25
_
C
ps
C
25
_
C
85
_
C
P3dB = 51.34 dBm (136.144 W)
P1dB = 50.539 dBm (113.21 W)
85
_
C
53
52
51
50
49
Actual
= 1000 mA
V
= 28 Vdc
= 180 mA
= 1000 mA
DD
DQ1
DQ2
I
I
V
DD
= 28 Vdc, I
= 180 mA, I
DQ1 DQ2
PAE
Pulsed CW, 12
μ
sec(on), 1% Duty Cycle
f = 1840 MHz
f = 1840 MHz
48
15
16
17
18
19
20
21
22
23
24
25
1
10
100
200
P ,
INPUT POWER (dBm)
in
P ,
OUTPUT POWER (WATTS) CW
out
Figure 37. Pulsed CW Output Power versus
Input Power
Figure 38. Power Gain and Power Added
Efficiency versus Output Power
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
17
TYPICAL CHARACTERISTICS — 1800 MHz
4
32
31
I
I
= 180 mA
= 1000 mA
V
= 28 Vdc
= 215 mA, I
DQ1
DD
I
DQ1
EDGE Modulation
= 800 mA
DQ2
DQ2
f = 1840 MHz
3
2
30
29
28
27
P
= 50 W Avg.
out
40 W Avg.
1
0
28 V
30 W Avg.
V
DD
= 24 V
32 V
0
50
100
150
200
1760 1780
1800 1820 1840 1860 1880 1900 1920 1940
f, FREQUENCY (MHz)
P ,
OUTPUT POWER (WATTS) CW
out
Figure 40. EVM versus Frequency
Figure 39. Power Gain versus Output Power
−40
−50
−60
−70
−80
−55
−60
V
= 28 Vdc
= 215 mA, I
DD1
25
_
C
85
_
C
I
= 800 mA
f = 1840 MHz, EDGE Modulation
DQ1
DQ2
P
= 50 W Avg.
out
T
= −30
_
C
SR @ 400 kHz
C
40 W Avg.
−65
−70
−75
−80
−85
V
DD1
= 28 Vdc, V
DD2
= 215 mA, I
= 28 Vdc
= 815 mA
30 W Avg.
I
DQ1
DQ2
f = 1840 MHz, EDGE Modulation
30 W Avg.
50 W Avg.
40 W Avg.
SR @ 600 kHz
1760 1780 1800 1820 1840
1860 1880 1900 1920
1940
f, FREQUENCY (MHz)
1
10
, OUTPUT POWER (WATTS) AVG.
100
200
P
out
Figure 42. Spectral Regrowth at 400 kHz
versus Output Power
Figure 41. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−50
−60
−70
−80
−90
14
12
10
8
70
V
I
= 28 Vdc
= 215 mA, I
DD1
V
= 28 Vdc
25
_
C
DD1
DQ1
DQ2
−30
_
C
25
_
C
= 800 mA
85
_
C
DQ1
DQ2
60
50
40
I
I
= 215 mA
T
= 85
_
C
C
f = 1840 MHz, EDGE Modulation
T
= −30
_
C
25
_
C
= 800 mA
C
f = 1840 MHz
EDGE Modulation
85
_
C
−30
_
C
6
30
20
PAE
4
2
0
10
0
EVM
1
10
, OUTPUT POWER (WATTS) AVG.
100
200
1
10
P ,
OUTPUT POWER (WATTS) AVG.
out
100
200
P
out
Figure 43. Spectral Regrowth at 600 kHz
versus Output Power
Figure 44. EVM and Power Added Efficiency
versus Output Power
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
18
TYPICAL CHARACTERISTICS — 1800 MHz
37
36
35
34
33
32
31
30
29
T
= −30
_
C
25
_
C
C
V
= 28 Vdc, P
= 40 W Avg.
out
DD
I
= 180 mA, I
= 1000 mA
DQ1
DQ2
85
_
C
1760 1780 1800 1820 1840 1860 1880 1900 1920
1940
f, FREQUENCY (MHz)
Figure 45. Power Gain versus Frequency
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
19
RF Device Data
Freescale Semiconductor
f = 1760 MHz
Z =
75
Ω
o
Z
in
f = 1920 MHz
f = 1760 MHz
Z
load
f = 1920 MHz
V
DD1
= V
= 28 Vdc, I
= 180 mA, I
= 1000 mA, P
= 100 W CW
DQ2 out
DD2
DQ1
f
Z
W
Z
load
W
in
MHz
1760
1780
1800
1820
1840
1860
1880
1900
1920
71.78 + j40.05
79.83 + j31.13
84.35 + j19.44
84.75 + j7.234
81.21 – j4.076
74.76 – j12.32
67.49 – j17.89
60.03 – j20.86
53.65 – j21.94
2.983 – j3.974
2.872 – j3.861
2.757 – j3.745
2.636 – j3.639
2.535 – j3.506
2.434 – j3.376
2.324 – j3.239
2.234 – j3.105
2.135 – j2.965
Z
in
=
Device input impedance as measured from
gate to ground.
Z
load
=
T
e
st circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
T
e
st
Z
Z
in
load
Figure 46. Series Equivalent Input and Load Impedance — 1800 MHz
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
20
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — 1800 MHz
56
Ideal
P3dB = 52.46 dBm (176.19 W)
55
54
53
52
P2dB = 52.19 dBm (165.57 W)
P1dB = 51.72 dBm (148.59 W)
Actual
51
50
V
= 28 Vdc, I
= 180 mA
= 1000 mA, Pulsed CW
DD
DQ1
I
DQ2
12
μ
sec(on) 1% Duty Cycle
f = 1880 MHz
49
17
18
19
20
21
22
24
23
P ,
INPUT POWER (dBm)
in
NOTE: Load Pull
T
e
st Fixture Tuned for Peak Output Power @ 28 V
Test Impedances per Compression Level
Z
Z
load
source
Ω
Ω
P3dB
83.04 – j2.44
1.36 – j3.19
Figure 47. Pulsed CW Output Power
versus Input Power @ 28 V
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
21
PACKAGE DIMENSIONS
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
22
RF Device Data
Freescale Semiconductor
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
23
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
24
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
25
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
26
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
27
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
28
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
29
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
30
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
•
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
•
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Ove
r
–
M
olded Plastic Packages
•
AN3789: Clamping of High Power RF Transistors and RFICs in Ove
r
–
M
olded Plastic Packages
Engineering Bulletins
•
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
May 2007
June 2007
•
•
Initial Release of Data Sheet
Removed Case Operating
T
e
mperature from Maximum Ratings table, p. 2. Case Operating
T
e
mperature
rating will be added to the Maximum Ratings table when parts’ Operating Junction
T
e
mperature is
increased to 225
°
C.
2
Apr. 2008
•
Operating Junction
T
e
mperature increased from 200
°
C to 225
°
C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200
°
C to 225
°
C
in Capable Plastic Package bullet, p. 1, 2
•
•
Added Case Operating
T
e
mperature limit to the Maximum Ratings table and set limit to 150
°
C, p. 2
Updated PCB information to show more specific material details, Figs. 3, 27,
T
e
st Circuit Schematic, p. 4,
14
•
•
Updated Part Numbers in
T
a
bles 6, 8, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 14
Replaced Case Outline 161
7
–
0
1 with 161
7
–
0
2, Issue A, p. 2
2
–
2
4. Revised cros
s
–
h
atched area for
exposed heat
spreader. Added pin numbers 1, 12, 13, and 14 to Sheets 1 and 2. Corrected mm Min and
Max values for dimension A1 to 0.99 and 1.09, respectively.
•
•
Replaced Case Outline 161
8
–
0
1 with 161
8
–
0
2, Issue A, p. 2
5
–
2
7. Added pin numbers 1, 12, 13, and 14
and Pin 1 Index designation to Sheet 1. Corrected dimensions e and e1 on Sheet 1. Removed Pin 5
designation from Sheet 2.
Replaced Case Outline 162
1
–
0
1 with 162
1
–
0
2, Issue A, p. 2
8
–
3
0. Added pin numbers 1, 12, 13, and 14
and Pin 1 Index designation to Sheet 1. Corrected dimensions e and e1 on Sheets 1 and 3. Removed Pin 5
designation from Sheet 2.
3
Mar. 2009
•
•
•
Changed Storage
T
e
mperature Range in Max Ratings table from
–
6
5 to +200 to
–
6
5 to +150 for
standardization across products, p. 2.
Updated Human Body Model ESD from Class 0 to 1 to reflect 2008 Human Body Model actual test data,
p. 2
Added footnote, Measurement made with device in straight lead configuration before any lead forming
operation is applied, to Functional
T
e
sts table, p. 2.
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
RF Device Data
Freescale Semiconductor
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