NXP-Semicon-MW7IC2040GNR1
| Part # | NXP-Semicon-MW7IC2040GNR1 |
Download  | NXP-Semicon-MW7IC2040GNR1 |
Document Number: MW7IC2040N
Rev. 1, 11/2009
Freescale Semiconductor
T
e
chnical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2040N wideband integrated circuit is designed with o
n
–
c
hip
matching that makes it usable from 1805 to 1990 MHz. This mult
i
–
s
tage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
MW7IC2040NR1
MW7IC2040GNR1
MW7IC2040NBR1
•
Typical Singl
e
–
C
arrier
W
–
C
DMA Performance: V
DD
= 28 Volts, I
DQ1
=
130 mA, I
DQ2
= 330 mA, P
out
= 4 Watts Avg., f = 1932.5, Channel
193
0
–
1
990 MHz, 180
5
–
1
880 MHz,
4 W AVG., 28 V
SINGLE
W
–
C
DMA, GSM EDGE, GSM
RF LDMOS WIDEBAND
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCD
F
.
Power Gain — 32 dB
Power Added Efficiency — 17.5%
ACPR @ 5 MHz Offset —
–
50 dBc in 3.84 MHz Bandwidth
INTEGRATED POWER AMPLIFIERS
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Stable into a 3:1 VSWR. All Spurs Below
–
6
0 dBc @ 100 mW to 40 Watts
CASE 188
6
–
0
1
T
O
–
2
70 W
B
–
1
6
PLASTIC
CW P
out
.
•
Typical P
out
@ 1 dB Compression Point
‘
30 Watts CW
GSM EDGE Application
MW7IC2040NR1
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 90 mA, I
DQ2
430 mA, P
out
= 16 Watts Avg., 180
5
–
1
880 MHz
Power Gain — 33 dB
=
CASE 188
7
–
0
1
T
O
–
2
70 W
B
–
1
6 GULL
PLASTIC
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset =
–
6
2 dBc
Spectral Regrowth @ 600 kHz Offset =
–
7
7 dBc
EVM — 1.5% rms
MW7IC2040GNR1
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ1
= 90 mA, I
DQ2
= 430 mA,
CASE 132
9
–
0
9
T
O
–
2
72 W
B
–
1
6
PLASTIC
P
out
= 40 Watts CW, 180
5
–
1
880 MHz and 193
0
–
1
990 MHz
Power Gain — 31 dB
Power Added Efficiency — 50%
Features
MW7IC2040NBR1
•
Characterized with Series Equivalent Larg
e
–
S
ignal Impedance Parameters
and Common Source
S
–
P
arameters
•
O
n
–
C
hip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current
T
e
mperature Compensation with Enable/
Disable Function
(1)
•
Integrated ESD Protection
•
225
°
C Capable Plastic Package
•
RoHS Compliant
•
In
T
a
pe and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
GND
V
V
1
2
3
4
5
GND
NC
16
15
DS1
GS2
V
GS1
NC
V
DS1
RF
RF /V
out DS2
6
14
in
NC
7
8
RF
RF /V
out DS2
V
in
GS1
V
V
GND
9
10
11
GS2
NC
GND
13
12
DS1
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
(
T
o
p View)
Note: Exposed
backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer
to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf. Select Documentation/Application Notes – AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2009. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
–
0
.5, +65
–
0
.5, +10
32, +0
–
6
5 to +150
150
Unit
Vdc
Vdc
Vdc
°
C
Drai
n
–
S
ource Voltage
Gat
e
–
S
ource Voltage
Operating Voltage
V
DSS
V
GS
DD
V
Storage
T
e
mperature Range
Case Operating
T
e
mperature
Operating Junction
T
e
mperature
Input Power
T
stg
T
°
C
C
(1,2)
T
225
°
C
J
P
25
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
θ
JC
°
C/W
W-
C
DMA
(P =
4 W Avg., Case
T
e
mperature = 73
°
C)
out
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 130 mA
= 330 mA
4.0
1.5
DQ1
DQ2
GSM EDGE
(P =
16 W Avg., Case
T
e
mperature = 76
°
C) Stage
1, 28 Vdc, I
= 130 mA
= 330 mA
4.1
1.4
out
DQ1
DQ2
Stage 2, 28 Vdc, I
GSM
(P =
40 W Avg., Case
T
e
mperature = 79
°
C) Stage
1, 28 Vdc, I
= 130 mA
= 330 mA
3.9
1.3
out
DQ1
DQ2
Stage 2, 28 Vdc, I
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD2
2
–
A
114)
Machine Model (per EIA/JESD2
2
–
A
115)
Charge Device Model (per JESD2
2
–
C
101)
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD2
2
–
A
113, IPC/JEDEC
J
–
S
T
D
–
0
20
3
260
°
C
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gat
e
–
S
ource Leakage Current
(V =
1.5 Vdc, V
= 0 Vdc)
1
GS
DS
Stage 1 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
2
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V =
10 Vdc, I
= 25
μ
Adc)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 130 mAdc)
2.7
DS
DQ1
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 130 mAdc, Measured in Functional
T
e
st)
V
13
14.5
16
DD
DQ1
1. Continuous
use at maximum temperature will affect MTT
F
.
2. MTTF
calculator available at http://www.freescale.com/rf. Select Software &
T
o
ols/Development
T
o
ols/Calculators to access MTTF
calculators by product.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes – AN1955.
(continued)
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
C
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gat
e
–
S
ource Leakage Current
(V =
1.5 Vdc, V
= 0 Vdc)
1
GS
DS
Stage 2 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
7
2
2.8
8
2.7
—
9
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V =
10 Vdc, I
= 140
μ
Adc)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 330 mAdc)
DS
DQ2
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 330 mAdc, Measured in Functional
T
e
st)
V
DD
DQ2
Drai
n
–
S
ource O
n
–
V
oltage
(V =
10 Vdc, I
= 1 Adc)
V
0.2
0.39
1.2
GS
D
(1)
Stage 2 — Dynamic Characteristics
Output Capacitance
C
oss
—
246
—
pF
(V =
28 Vdc
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
GS
(3)
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 130 mA, I
= 330 mA, P
= 4 W Avg.,
DQ2 out
DD
DQ1
f = 1932.5 MHz, Singl
e
–
C
arrier
W
–
C
DMA, 3GPP
T
e
st Model 1, 64 DPCH, 45.2% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCD
F
.
A
CPR measured in 3.84 MHz Channel Bandwidth @
5 MHz Offset.
Power Gain
G
29.5
16
32
17.5
–
5
0
–
1
5
34.5
—
dB
%
ps
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
PAE
ACPR
IRL
—
–
4
6
-8
dBc
dB
—
Typical Performances
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 130 mA, I
= 330 mA, 193
0
–
1
990 MHz
DD
DQ1
DQ2
P
@ 1 dB Compression Point, CW
P1dB
IMD
—
30
60
—
W
out
IMD Symmetry @ 22 W PE
P
, P
w
here IMD Third Order
MHz
out
sym
—
—
—
—
Intermodulation
`
30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
VBW Resonance Point
VBW
65
3
—
—
MHz
%
res
(IMD Third Order Intermodulation Inflection Point)
(2)
Quiescent Current Accuracy over
T
e
mperature
Δ
I
QT
with 5.6 k
Ω
Gate Feed Resistors
(
–
3
0 to 85
°
C)
Gain Flatness in 60 MHz Bandwidth @ P
= 4 W Avg.
G
—
—
1.2
0.5
—
—
dB
out
F
Average Deviation from Linear Phase in 60 MHz Bandwidth
Φ
°
@ P
= 30 W CW
out
Average Group Delay @ P
= 30 W CW, f = 1960 MHz
Delay
—
—
2.5
33
—
—
ns
out
Par
t
–
t
o
–
P
art Insertion Phase Variation @ P
= 30 W CW,
ΔΦ
°
out
f = 1960 MHz, Six Sigma Window
Gain Variation over
T
e
mperature
(-
3
0
°
C to +85
°
C)
Δ
G
—
—
0.029
0.003
—
—
dB/
°
C
Output Power Variation over
T
e
mperature
Δ
P1dB
dBm/
°
C
(-
3
0
°
C to +85
°
C)
1. Part
internally matched both on input and output.
2. Refer
to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf. Select Documentation/Application Notes – AN1977 or
AN1987.
3. Measurement
made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical
W
–
C
DMA Performance — 1800 MHz
(In Freescale
W
–
C
DMA 180
5
–
1
880 MHz
T
e
st Fixture, 50 ohm system) V
= 28 Vdc,
DD
I
= 130 mA, I
= 330 mA, P
= 4 W Avg., 180
5
–
1
880 MHz, Singl
e
–
C
arrier
W
–
C
DMA, 3GPP
T
e
st Model 1, 64 DPCH, 45.2% Clipping,
DQ2 out
DQ1
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCD
F
.
A
CPR measured in 3.84 MHz Channel Bandwidth @
5 MHz Offset.
Power Gain
G
—
—
—
—
33.5
16.5
–
5
0
-6
—
—
—
—
dB
%
ps
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
PAE
ACPR
IRL
dBc
dB
Typical GSM EDGE Performance — 1800 MHz
(In Freescale GSM EDGE 180
5
–
1
880 MHz
T
e
st Fixture, 50 ohm system) V
= 28 Vdc,
DD
P
= 16 W Avg., I
= 90 mA, I
= 430 mA, 180
5
–
1
880 MHz EDGE Modulation
out
DQ1
DQ2
Power Gain
G
—
—
—
—
—
33
35
—
—
—
—
—
dB
%
ps
Power Added Efficiency
Error Vector Magnitude
PAE
EVM
SR1
SR2
1.5
–
6
2
–
7
7
% rms
dBc
dBc
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Typical GSM EDGE Performance — 1900 MHz
(In Freescale GSM EDGE 193
0
–
1
990 MHz
T
e
st Fixture, 50 ohm system) V
= 28 Vdc,
DD
P
= 16 W Avg., I
= 90 mA, I
= 430 mA, 193
0
–
1
990 MHz EDGE Modulation
out
DQ1
DQ2
Power Gain
G
—
—
—
—
—
30
33
—
dB
%
ps
Power Added Efficiency
Error Vector Magnitude
PAE
EVM
SR1
SR2
—
1.5
–
6
2
–
8
0
—
% rms
dBc
dBc
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
—
—
Typical CW Performance
(In Freescale GSM EDGE 193
0
–
1
990 MHz
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 90 mA,
DD
DQ1
I
= 430 mA, P
= 40 W CW, 180
5
–
1
880 MHz and 193
0
–
1
990 MHz
DQ2
out
Power Gain
G
—
—
—
—
31
50
—
—
—
—
dB
%
ps
Power Added Efficiency
Input Return Loss
PAE
IRL
–
1
5
45
dB
W
P
@ 1 dB Compression Point
P1dB
out
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
4
+
C13
V
Z13
DD2
1
2
3
4
5
DUT
16
15
C3
C17
C6
C7
V
NC
DD1
G1
G2
Z8
C11 C1
Z3
C15
Z15
RF
INPUT
RF
OUTPUT
NC
Z2
Z4
Z12
Z10
Z11
Z16
Z1
Z5
Z6
Z7
14
6
C5
C16
C14
7
8
9
NC
Z9
Quiescent Current
Temperature
Compensation
G2
G1
V
V
GG1
GG2
R1
R2
Z14
10
11
NC
13
12
C4
C18
C8
C9
C12
C10 C2
Z1
0.0826
″
x 0.5043
″
Microstrip
0.0826
″
x 0.3639
″
Microstrip
0.0826
″
x 0.4258
″
Microstrip
0.0826
″
x 0.3639
″
Microstrip
0.0826
″
x 0.3060
″
Microstrip
0.0826
″
x 0.9290
″
Microstrip
0.0600
″
x 0.1273
″
Microstrip
0.0800
″
x 1.3684
″
Microstrip
Z10
Z11
Z12
0.3419
″
x 0.1725
″
Microstrip
0.3419
″
x 0.4671
″
Microstrip
0.0830
″
x 0.4220
″
Microstrip
0.0830
″
x 0.2855
″
Microstrip
0.0830
″
x 0.9030
″
Microstrip
0.0830
″
x 0.2499
″
Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z13, Z14
Z15
Z16
PCB
Rogers RO4350, 0.030
″
,
ε
= 3.5
r
Z8, Z9
Figure 3. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 193
0
–
1
990 MHz
Table 6. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 193
0
–
1
990 MHz
Part
Description
6.8 pF Chip Capacitors
Part Number
ATC100B6R8CT500XT
GRM55DR61H106KA88L
C1206C225K4RAC
Manufacturer
ATC
C1, C2, C3, C4, C5
C6, C7, C8, C9, C10, C11
10
μ
F
,
5
0 V Chip Capacitors
2.2
μ
F
,
1
6 V Chip Capacitor
470
μ
F
,
6
3 V Electrolytic Capacitor, Radial
0.8 pF Chip Capacitors
Murata
Kemet
Multicomp
ATC
C12
C13
MCGPR63V477M13X2
6
–
R
H
ATC100B0R8BT500XT
ATC100B1R0BT500XT
GRM21BR71H105KA12L
CRCW12065601FKEA
C14, C16
C15
1 pF Chip Capacitor
ATC
C17, C18
R1, R2
1
μ
F
,
5
0 V Chip Capacitors
5.6 K
Ω
, 1/4 W Chip Resistors
Murata
Vishay
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
5
C13
C3
C17
C11
C1
C6 C7
C15
C16
C14
TO272WB−16
MW7IC2040N
Rev. 2
C5
C2
C8 C9
C10
R1
R2
C4
C18
C12
Figure 4. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 193
0
–
1
990 MHz
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
37
18
PAE
36
35
34
33
17
V
= 28 Vdc, P
= 4 W (Avg.), I
out
= 130 mA
DQ1
16
= 330 mA, Single−Carrier W−CDMA, 3.84 MHz
DD
I
DQ2
Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
G
15
ps
14
−47
−48
−49
−50
−51
−52
32
31
30
29
28
27
−10
−12
−14
−16
−18
−20
IRL
ACPR
1880 1900 1920
1940 1960 1980 2000 2020
2040
f, FREQUENCY (MHz)
Figure 5. Single Carrier
W
–
C
DMA Broadband Performance
@ P
out
= 4 Watts Avg.
35
34
35
I
= 195 mA
DQ1
413 mA
330 mA
I
= 495 mA
DQ2
34
33
32
31
30
163 mA
80 mA
98 mA
33
32
31
248 mA
165 mA
65 mA
V
= 28 Vdc
= 130 mA
f = 1960 MHz
DD
V
I
= 28 Vdc
= 330 mA
DD
30
29
I
DQ1
29
28
DQ2
f = 1960 MHz
1
10
50
1
10
P ,
OUTPUT POWER (WATTS) CW
out
50
P
, OUTPUT POWER (WATTS) CW
out
Figure 6. Power Gain versus Output Power
@ I
DQ1
= 130 mA
Figure 7. Power Gain versus Output Power
@ I
DQ2
= 330 mA
−10
V
= 28 Vdc, P
= 22 W (PEP), I
= 130 mA
DD
out
DQ1
= 330 mA, Two−Tone Measurements
I
DQ2
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
−30
−40
−50
−60
IM3−U
IM3−L
IM5−L
IM5−U
IM7−L
IM7−U
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tw
o
–
T
one Spacing
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
−10
−20
−30
−40
−50
−60
−70
34
33
65
55
ACPR
G
ps
32
31
45
35
25
15
5
PAE
30
29
V
= 28 Vdc, I
= 130 mA, I
= 330 mA, f = 1960 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
DD
DQ1
DQ2
28
1
8
16
24
32
40
P
, OUTPUT POWER (WATTS)
out
Figure 9. Power Gain, ACPR and Power Added
Efficiency versus Output Power
−10
40
38
36
34
32
30
50
45
85
_
C
−30
_
C
25
_
C
−16
−22
−28
−34
−40
−46
−52
−58
−64
40
PAE
T =
−30
_
C
C
−30
_
C
ACPR
35
30
25
20
15
25
_
C
G
85
_
C
ps
28
26
24
22
V
= 28 Vdc, I
= 130 mA
DQ1
= 330 mA, f = 1960 MHz
DD
I
DQ2
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
10
5
1
10
, OUTPUT POWER (WATTS) AVG.
60
P
out
Figure 10. Singl
e
–
C
arrier
W
–
C
DMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
40
35
30
0
Gain
−4
−8
−12
−16
−20
25
20
15
V
P
= 28 Vdc
= 25 dBm
= 130 mA
= 330 mA
DD
out
IRL
I
I
DQ1
DQ2
1400 1500
1600 1700 1800 1900 2000 2100 2200 2300 2400
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
8
TYPICAL CHARACTERISTICS
9
8
7
10
10
10
2nd Stage
1st Stage
6
5
10
10
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (
°
C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V
= 28 Vdc, P
= 4 W Avg., and PAE = 17.5%.
DD
out
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W-
C
DMA TEST SIGNAL
100
10
10
0
−10
−20
−30
−40
−50
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
−60
−70
+ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
0.001
−80
0.0001
0
1
2
3
4
5
6
7
8
9
10
−90
PEAK−TO−AVERAGE (dB)
−100
Figure 13. CCDF
W
–
C
DMA 3GP
P
, T
e
st Model 1,
64 DPCH, 45.2% Clipping, Singl
e
–
C
arrier Test Signal
−9 −7.2
−5.4 −3.6 −1.8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 14. Singl
e
–
C
arrier
W
–
C
DMA Spectrum
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
9
Z =
50
Ω
o
Z =
10
Ω
o
Z
in
f = 2040 MHz
f = 2040 MHz
f = 1880 MHz
Z
f = 1880 MHz
load
V
= 28 Vdc, I
= 130 mA, I
= 330 mA, P
= 4 W Avg.
DQ2 out
DD
DQ1
f
Z
W
Z
load
W
in
MHz
1880
1900
1920
1940
1960
1980
2000
2020
2040
=
42.97 – j25.07
44.01 – j25.91
45.14 – j26.72
46.38 – j27.48
47.71 – j28.19
49.16 – j28.83
50.71 – j29.40
52.36 – j29.87
54.12 – j30.23
6.10 – j5.01
5.92 – j4.71
5.76 – j4.44
5.62 – j4.21
5.51 – j4.01
5.40 – j3.83
5.27 – j3.71
5.13 – j3.60
4.99 – j3.52
Z
Device input impedance as measured from
gate to ground.
in
Z
=
T
e
st circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
T
e
st
Z
Z
in
load
Figure 15. Series Equivalent Input and Load Impedance
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
10
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
53
53
52
51
52
51
P3dB = 47.74 dBm (59 W)
Ideal
Ideal
P3dB = 47.88 dBm (61 W)
50
49
48
47
46
45
44
43
50
49
48
47
46
45
44
43
P1dB = 47.06 dBm (51 W)
P1dB = 47.37 dBm (55 W)
Actual
Actual
V
= 28 Vdc, I
= 130 mA, I
= 330 mA
V
= 28 Vdc, I
= 130 mA, I
= 330 mA
DQ2
DD
DQ1
DQ2
DD
DQ1
Pulsed CW, 10
μ
sec(on), 10% Duty Cycle, f = 1990 MHz
Pulsed CW, 10
μ
sec(on), 10% Duty Cycle, f = 1930 MHz
13 14 15 16 17 18 19 20 21
P ,
INPUT POWER (dBm)
11
12
13
14
15
16
17
18
19
20
21
22 23
P ,
INPUT POWER (dBm)
in
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Test Impedances per Compression Level
Z
Z
Z
Z
load
source
load
source
Ω
Ω
Ω
Ω
P1dB
49.30 + j8.40
3.60 – j4.50
P1dB
50.0 – j4.90
3.40 – j5.10
Figure 16. Pulsed CW Output Power
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 1930 MHz
versus Input Power @ 28 V @ 1990 MHz
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
11
Table 7. Common Source
S
–
P
arameters
(V =
28 V, I
= 90 mA, I
= 430 mA, T
= 25
°
C, 50 Ohm System)
DQ2 C
DD
DQ1
S
S
S
S
22
11
21
12
f
|S
|
∠ φ
–
1
18.5
–
1
47.4
–
1
76.5
156.7
146.1
116.5
59.6
|S
|
∠ φ
–
1
51.3
178.9
144.7
103.6
45.5
|S
|
∠ φ
–
7
1.2
–
8
6.7
–
1
14.0
–
1
49.9
177.5
110.9
67.4
|S |
22
∠ φ
–
1
60.3
170.4
137.1
94.6
MHz
11
21
12
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
2550
2600
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
3250
3300
3350
3400
3450
3500
0.595
0.545
0.482
0.398
0.332
0.542
0.488
0.373
0.294
0.269
0.297
0.342
0.389
0.420
0.424
0.388
0.302
0.188
0.066
0.034
0.104
0.154
0.191
0.250
0.278
0.309
0.343
0.382
0.420
0.459
0.498
0.542
0.577
0.603
0.628
0.654
0.661
0.678
0.692
0.704
2.110
3.851
7.415
15.620
37.544
62.685
50.513
42.562
38.690
36.138
33.838
32.122
30.682
29.594
28.734
27.277
24.568
20.404
16.281
12.661
9.738
7.577
5.905
3.679
2.921
2.330
1.874
1.518
1.226
0.985
0.782
0.641
0.531
0.439
0.363
0.303
0.250
0.208
0.157
0.158
0.00174
0.00192
0.00294
0.00445
0.00746
0.00940
0.00642
0.00497
0.00438
0.00416
0.00382
0.00350
0.00342
0.00354
0.00396
0.00425
0.00483
0.00470
0.00415
0.00388
0.00368
0.00328
0.00281
0.00245
0.00271
0.00373
0.00250
0.00286
0.00313
0.00262
0.00101
0.00279
0.00504
0.00526
0.00587
0.00659
0.00909
0.00691
0.00718
0.01000
0.888
0.876
0.867
0.872
0.884
0.650
0.454
0.419
0.416
0.443
0.497
0.553
0.602
0.640
0.666
0.689
0.720
0.753
0.778
0.806
0.826
0.842
0.851
0.856
0.854
0.854
0.849
0.851
0.850
0.851
0.847
0.850
0.856
0.857
0.858
0.857
0.853
0.845
0.745
0.760
29.4
–
4
8.6
–
1
24.5
–
1
78.8
132.3
85.3
–
9
3.8
157.6
105.4
75.9
8.7
40.5
–
4
6.7
–
1
07.0
–
1
61.3
154.0
114.8
78.2
19.1
–
7
.3
54.0
39.7
–
2
8.5
–
5
0.7
–
6
9.9
–
8
4.6
–
1
01.3
–
1
25.1
–
1
53.1
174.4
148.7
124.4
106.5
77.5
31.7
–
4
.7
8.0
–
4
8.5
–
9
2.4
–
1
37.7
175.2
126.4
78.5
–
1
6.3
–
4
1.0
–
6
5.4
–
8
9.2
–
1
13.5
–
1
38.7
–
1
63.6
171.0
145.2
119.7
94.4
41.2
2.9
–
3
7.2
–
7
8.8
–
1
23.6
55.1
33.8
–
8
.6
12.1
–
4
8.2
–
8
5.7
–
1
21.7
169.8
136.7
104.5
72.7
–
1
7.7
–
4
4.6
–
9
4.4
–
1
18.4
–
1
42.0
–
1
65.3
171.0
147.7
124.6
102.9
79.6
57.2
37.8
45.7
19.5
22.1
2.2
–
0
.5
–
1
9.6
–
4
0.7
–
7
1.3
–
9
8.0
–
1
08.5
–
8
4.9
–
1
10.7
–
1
52.0
–
1
76.6
160.1
129.6
98.1
–
2
3.5
–
4
6.0
–
6
8.4
–
9
1.1
–
1
13.4
–
1
36.3
–
1
59.8
176.4
152.0
126.8
101.4
74.5
41.5
10.6
–
1
9.8
–
4
9.0
–
7
6.9
–
1
05.1
–
1
33.3
–
1
61.1
171.0
143.7
115.4
88.5
56.4
33.6
11.0
–
1
1.9
–
3
5.4
–
5
7.0
–
8
0.2
–
1
03.7
80.9
42.1
71.5
46.8
43.7
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
12
W-
C
DMA — 180
5
–
1
880 MHz
+
C13
V
DD2
1
2
3
4
5
DUT
16
15
C3
C6
C7
V
NC
DD1
G1
G2
Z8
C11 C1
Z6 Z7
Z3
C15
Z13
RF
INPUT
RF
OUTPUT
NC
Z2
Z4
Z12
Z10
Z11
Z14
Z1
Z5
14
6
C5
C16
C14
7
8
9
NC
Z9
Quiescent Current
Temperature
Compensation
G2
G1
V
V
GG1
GG2
R1
R2
10
11
NC
13
12
C4
C8
C9
C12
C10 C2
Z1
0.0826
″
x 0.5043
″
Microstrip
0.0826
″
x 0.3639
″
Microstrip
0.0826
″
x 0.4258
″
Microstrip
0.0826
″
x 0.3639
″
Microstrip
0.0826
″
x 0.3459
″
Microstrip
0.0826
″
x 0.9115
″
Microstrip
0.0600
″
x 0.1273
″
Microstrip
Z8, Z9
Z10
Z11
Z12
Z13
0.0800
″
x 1.1139
″
Microstrip
0.3419
″
x 0.1725
″
Microstrip
0.3419
″
x 0.4671
″
Microstrip
0.0830
″
x 0.4220
″
Microstrip
0.0830
″
x 0.9030
″
Microstrip
0.0830
″
x 0.2499
″
Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z14
PCB
Rogers RO4350, 0.030
″
,
ε
= 3.5
r
Figure 18. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 180
5
–
1
880 MHz
Table 8. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 180
5
–
1
880 MHz
Part
C1, C2, C3, C4, C5
C6, C7, C8, C9, C10, C11
C12
Description
6.8 pF Chip Capacitors
Part Number
ATC100B6R8CT500XT
GRM55DR61H106KA88L
C1206C225K4RAC
Manufacturer
ATC
10
μ
F
,
5
0 V Chip Capacitors
2.2
μ
F
,
1
6 V Chip Capacitor
470
μ
F
,
6
3 V Electrolytic Capacitor, Radial
1 pF Chip Capacitors
Murata
Kemet
Multicomp
ATC
C13
MCGPR63V477M13X2
6
–
R
H
ATC100B1R0BT500XT
CRCW12065601FKEA
C14, C15, C16
R1, R2
5.6 K
Ω
, 1/4 W Chip Resistors
Vishay
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
13
W-
C
DMA — 180
5
–
1
880 MHz
C13
C3
C11
C6 C7
C1
C15
C16
C14
TO272WB−16
MW7IC2040N
Rev. 2
C5
C2
C10
C8 C9
R1
R2
C4
C12
Figure 19. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 180
5
–
1
880 MHz
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
14
RF Device Data
Freescale Semiconductor
GSM EDGE — 180
5
–
1
880 MHz
+
V
DD1
C13
V
DD2
C11 C1
Z3
1
2
3
4
5
DUT
16
15
C3
C6
C7
NC
Z4
Z5
Z2
G1
G2
Z8
C15
Z13
RF
INPUT
RF
OUTPUT
C14
NC
Z12
Z10
Z11
Z14
Z1
Z6
Z7
14
6
C5
C16
7 NC
Z9
Quiescent Current
Temperature
Compensation
8
G2
V
V
9
GG1
GG2
G1
R1
R2
10
11
NC
13
12
C4
C8
C9
C12
C10 C2
Z1
0.0826
″
x 0.5043
″
Microstrip
0.0826
″
x 0.3639
″
Microstrip
0.0826
″
x 0.4258
″
Microstrip
0.0826
″
x 0.2315
″
Microstrip
0.0826
″
x 0.1324
″
Microstrip
0.0826
″
x 1.2574
″
Microstrip
0.0600
″
x 0.1273
″
Microstrip
Z8, Z9
Z10
Z11
Z12
Z13
0.0800
″
x 1.3354
″
Microstrip
0.3419
″
x 0.1725
″
Microstrip
0.3419
″
x 0.4671
″
Microstrip
0.0830
″
x 0.3575
″
Microstrip
0.0830
″
x 0.9675
″
Microstrip
0.0830
″
x 0.2499
″
Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z14
PCB
Rogers RO4350, 0.030
″
,
ε
= 3.5
r
Figure 20. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 180
5
–
1
880 MHz
Table 9. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 180
5
–
1
880 MHz
Part
Description
6.8 pF Chip Capacitors
Part Number
ATC100B6R8CT500XT
GRM55DR61H106KA88L
C1206C225K4RAC
Manufacturer
ATC
C1, C2, C3, C4, C5
C6, C7, C8, C9, C10, C11
10
μ
F
,
5
0 V Chip Capacitors
2.2
μ
F
,
1
6 V Chip Capacitor
470
μ
F
,
6
3 V Electrolytic Capacitor, Radial
0.8 pF Chip Capacitor
Murata
Kemet
Multicomp
ATC
C12
C13
MCGPR63V477M13X2
6
–
R
H
ATC100B0R8BT500XT
ATC100B1R0BT500XT
ATC100B1R2BT500XT
CRCW12065601FKEA
C14
C15
1 pF Chip Capacitor
ATC
C16
1.2 pF Chip Capacitor
ATC
R1, R2
5.6 K
Ω
, 1/4 W Chip Resistors
Vishay
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
15
GSM EDGE — 180
5
–
1
880 MHz
C13
C3
C11
C6 C7
C1
C15
C16
C14
TO272WB−16
MW7IC2040N
Rev. 2
C5
C2
C10
C8 C9
R1
R2
C4
C12
Figure 21. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 180
5
–
1
880 MHz
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
16
RF Device Data
Freescale Semiconductor
GSM EDGE — 193
0
–
1
990 MHz
+
C13
V
DD2
1
2
3
4
5
DUT
16
15
C3
C6
C7
V
NC
DD1
G1
G2
Z8
C11 C1
Z6 Z7
Z3
C15
Z13
RF
INPUT
RF
OUTPUT
NC
Z2
Z4
Z12
Z10
Z11
Z14
Z1
Z5
14
6
C5
C16
C14
7
8
9
NC
Z9
Quiescent Current
Temperature
Compensation
G2
G1
V
V
GG1
GG2
R1
R2
10
11
NC
13
12
C4
C8
C9
C12
C10 C2
Z1
0.0826
″
x 0.5043
″
Microstrip
0.0826
″
x 0.3639
″
Microstrip
0.0826
″
x 0.4258
″
Microstrip
0.0826
″
x 0.3639
″
Microstrip
0.0826
″
x 0.6544
″
Microstrip
0.0826
″
x 0.6030
″
Microstrip
0.0600
″
x 0.1273
″
Microstrip
Z8, Z9
Z10
Z11
Z12
Z13
0.0800
″
x 1.6274
″
Microstrip
0.3419
″
x 0.1725
″
Microstrip
0.3419
″
x 0.4671
″
Microstrip
0.0830
″
x 0.4685
″
Microstrip
0.0830
″
x 0.8565
″
Microstrip
0.0830
″
x 0.2499
″
Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z14
PCB
Rogers RO4350, 0.030
″
,
ε
= 3.5
r
Figure 22. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Schematic — 193
0
–
1
990 MHz
Table 10. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 193
0
–
1
990 MHz
Part
Description
6.8 pF Chip Capacitors
Part Number
ATC100B6R8CT500XT
GRM55DR61H106KA88L
C1206C225K4RAC
Manufacturer
ATC
C1, C2, C3, C4, C5
C6, C7, C8, C9, C10, C11
10
μ
F
,
5
0 V Chip Capacitors
2.2
μ
F
,
1
6 V Chip Capacitor
470
μ
F
,
6
3 V Electrolytic Capacitor, Radial
0.5 pF Chip Capacitor
Murata
Kemet
Multicomp
ATC
C12
C13
MCGPR63V477M13X2
6
–
R
H
ATC100B0R5BT500XT
ATC100B0R8BT500XT
CRCW12065601FKEA
C14
C15, C16
R1, R2
0.8 pF Chip Capacitors
ATC
5.6 K
Ω
, 1/4 W Chip Resistors
Vishay
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
17
GSM EDGE — 193
0
–
1
990 MHz
C13
C3
C11
C1
C6 C7
C15
C16
C14
TO272WB−16
MW7IC2040N
Rev. 2
C5
C2
C8 C9
C10
R1
R2
C4
C12
Figure 23. MW7IC2040NR1(GNR1)(NBR1) Test Circuit Component Layout — 193
0
–
1
990 MHz
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
18
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
19
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
20
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
21
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
22
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
23
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
24
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
25
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
26
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
27
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
•
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
•
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Ove
r
–
M
olded Plastic Packages
•
AN3789: Clamping of High Power RF Transistors and RFICs in Ove
r
–
M
olded Plastic Packages
Engineering Bulletins
•
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
Electromigration MTTF Calculator
•
RF High Power Model
For Software and
T
o
ols, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software &
T
o
ols tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Feb. 2009
Nov. 2009
•
•
Initial Release of Data Sheet
Updated Human Body Model ESD from Class 1C to 1B to reflect Human Body Model actual test data,
p. 2
•
•
•
Fig. 13, CCDF
W
–
C
DMA 3GP
P
, T
e
st Model 1, 64 DPCH, 45.2% Clipping, Singl
e
–
C
arrier
T
e
st Signal and
Fig. 14, Singl
e
–
C
arrier
W
–
C
DMA Spectrum updated to show the undistorted input test signal, p. 9
Added AN3789, Clamping of High Power RF Transistors and RFICs in Ove
r
–
M
olded Plastic Packages to
Product Documentation, Application Notes, p. 28
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 28
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
RF Device Data
Freescale Semiconductor
28
How to Reach Us:
Home Page:
Web Support:
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
T
e
chnical Information Center, EL516
2100 East Elliot Road
T
e
mpe, Arizona 85284
1-
8
0
0
–
5
2
1
–
6
274 or +
1
–
4
8
0
–
7
6
8
–
2
130
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
T
e
chnical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO
T
o
wer 15F
1-8-
1
, Shim
o
–
M
eguro, Megur
o
–
k
u,
T
o
kyo 15
3
–
0
064
Japan
0120 191014 or +81 3 5437 9125
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
Semiconductor was negligent regarding the design or manufacture of the part.
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1-
8
0
0
–
4
4
1
–
2
447 or +
1
–
3
0
3
–
6
7
5
–
2
140
Fax: +
1
–
3
0
3
–
6
7
5
–
2
150
Freescale
t
and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ
Freescale Semiconductor, Inc. 2009. All rights reserved.
Document Number: MW7IC2040N
R
e
v
.
1
,
1
1
/
20
0
9
