NXP-Semicon-MW7IC2220GNR1
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Document Number: MW7IC2220N
Rev. 2, 5/2011
Freescale Semiconductor
T
e
chnical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2220N wideband integrated circuit is designed with on
–
–
chip
matching that makes it usable from 2000 to 2200 MHz. This multi
–
–
stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD
–
–
SCDMA.
MW7IC2220NR1
MW7IC2220GNR1
MW7IC2220NBR1
•
Typical Single
–
–
Carrier W
–
–
CDMA Performance: V
DD
= 28 Volts, I
DQ1
= 80 mA,
I
DQ2
= 300 mA, P
out
= 2 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCD
F
.
2110
–
-2170 MHz, 2 W Avg., 28 V
SINGLE W
–
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Power Gain — 31 dB
Power Added Efficiency — 13%
ACPR @ 5 MHz Offset —
–
–
50 dBc in 3.84 MHz Bandwidth
•
•
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW
Output Power
CASE 1886
–
-01
TO
–
-270 WB
–
-16
PLASTIC
Stable into a 5:1 VSWR. All Spurs Below
–
–
60 dBc @ 100 mW to 5 Watts
CW P
out
.
MW7IC2220NR1
Typical P
out
@ 1 dB Compression Point
‘
20 Watts CW
Features
•
Characterized with Series Equivalent Large
–
–
Signal Impedance Parameters
CASE 1887
–
-01
TO
–
-270 WB
–
-16 GULL
PLASTIC
and Common Source S
–
–
Parameters
•
•
On
–
–
Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current
T
e
mperature Compensation with
MW7IC2220GNR1
Enable/Disable Function
(1)
•
•
•
•
Integrated ESD Protection
225
°
C Capable Plastic Package
RoHS Compliant
In
T
a
pe and Reel. R1 Suffix = 500 Units, 44 mm
T
a
pe Width, 13 inch Reel.
CASE 1329
–
-09
TO
–
-272 WB
–
-16
PLASTIC
MW7IC2220NBR1
GND
1
2
3
4
5
16
15
GND
NC
V
DS1
NC
NC
NC
V
DS1
RF /V
out DS2
6
14
RF
in
RF
RF /V
out DS2
in
7
8
NC
GS1
GS2
DS1
GND
V
V
9
V
V
GS1
GS2
Quiescent Current
Temperature Compensation
NC
GND
10
11
13
12
V
(1)
V
DS1
(
T
o
p View)
Note: Exposed
backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer
to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf. Select Documentation/Application Notes
–
–
A
N1977 o
r
A
N1987.
©
Freescale Semiconductor, Inc., 2008
–
–
2009, 2011. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
–
–
0.5, +65
–
–
0.5, +5
32, +0
–
–
65 to +150
150
Unit
Vdc
Vdc
Vdc
°
C
Drain
–
–
Source Voltage
Gate
–
–
Source Voltage
Operating Voltage
V
DSS
V
GS
DD
V
Storage
T
e
mperature Range
Case Operating
T
e
mperature
Operating Junction
T
e
mperature
Input Power
T
stg
T
C
°
C
(1,2)
T
225
°
C
J
P
20
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
θ
°
C/W
JC
2 W Avg.
(P =
2 W CW, Case
T
e
mperature = 78
°
C)
out
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 80 mA
= 300 mA
4.3
1.5
DQ1
DQ2
20 W Avg.
(P =
20 W CW, Case
T
e
mperature = 82
°
C)
out
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 80 mA
= 300 mA
4.3
1.25
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22
–
–
A
1
14)
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
0 (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020
3
260
°
C
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
(V =
5 Vdc, V
= 0 Vdc)
I
1
GS
DS
Stage 1 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
2
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V =
10 Vdc, I
= 23
μ
Adc)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 80 mAdc)
2.8
12.2
DS
DQ1
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 80 mAdc, Measured in Functional
T
e
st)
V
9.5
16.5
DD
DQ1
1. Continuous
use at maximum temperature will affect MTT
F
.
2. MTTF
calculator available at http://www.freescale.com/rf. Select Software &
T
o
ols/Development
T
o
ols/Calculators to access MTTF
calculators by product.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
–
–
A
N1955.
(continued)
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
A
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
(V =
5 Vdc, V
= 0 Vdc)
I
1
GS
DS
Stage 2 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
7
2
2.7
8
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V =
10 Vdc, I
= 150
μ
Adc)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 300 mAdc)
DS
DQ2
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 300 mAdc, Measured in Functional
T
e
st)
V
12.5
1.2
DD
DQ2
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 1 Adc)
V
0.2
0.39
GS
D
(1)
Stage 2 — Dynamic Characteristics
Output Capacitance
C
oss
—
205
—
pF
(V =
28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
GS
Functional Tests
(In Freescale Wideband 2110
–
–
2170 MHz
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 80 mA, I
= 300 mA,
DQ2
DD
DQ1
P
out
= 2 W Avg., f = 2167.5 MHz, Single
–
–
Carrier W
–
–
CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCD
F
.
ACPR measured in 3.84 MHz Channel Bandwidth @
±
5 MHz Offset.
Power Gain
G
29
11
—
—
31
13
34
—
dB
%
ps
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
PAE
ACPR
IRL
— 5 0
— 1 4
— 4 7
— 1 2
dBc
dB
Typical Performances
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 80 mA, I
= 300 mA, 2110
–
–
2170 MHz
DQ2
DD
DQ1
P
@ 1 dB Compression Point, CW
P1dB
IMD
—
20
—
W
out
IMD Symmetry @ 18 W PE
P
, P
w
here IMD Third Order
MHz
out
sym
—
—
40
—
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
70
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
= 2 W Avg.
G
—
—
0.6
1.2
—
—
dB
out
F
Average Deviation from Linear Phase in 60 MHz Bandwidth
Φ
°
@ P
= 20 W CW
out
Average Group Delay @ P
= 20 W CW, f = 2140 MHz
Delay
—
—
2.5
15
—
—
ns
out
Part
–
–
to
–
–
Part Insertion Phase Variation @ P
= 20 W CW,
∆Φ
°
out
f = 2140 MHz, Six Sigma Window
Gain Variation over
T
e
mperature
(
–
–
30
°
C to +85
°
C)
∆
G
—
—
0.036
0.003
—
—
dB/
°
C
dB/
°
C
Output Power Variation over
T
e
mperature
∆
P1dB
(
–
–
30
°
C to +85
°
C)
1. Part
internally matched both on input and output.
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
3
+
C26
V
DD2
NC
1
2
3
4
5
DUT
16
15
V
DD1
C16 C17 C18
C19 C20
NC
NC
NC
Z13
Z6
C9
C10
RF
INPUT
RF
OUTPUT
C11
Z7 Z8
C13
Z9 Z10
Z1
Z2
Z3
Z4
Z5
Z11
Z12
14
6
C15
C12
C1
7
8
9
NC
NC
C14
Z14
Quiescent Current
Temperature
Compensation
C2
13
12
10
11
V
V
GG1
GG2
R1
C3
C21 C22 C23
C24 C25
R2
C5 C4 C6
C7 C8
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.090
″
x 0.083
″
Microstrip
2.107
″
x 0.083
″
Microstrip
0.016
″
x 0.083
″
x 0.055
″
T
a
per
0.106
″
x 0.055
″
Microstrip
0.570
″
x 0.322
″
Microstrip
0.204
″
x 0.322
″
Microstrip
0.050
″
x 0.322
″
Microstrip
Z8
Z9
Z10
Z11
Z12
0.263
″
x 0.123
″
Microstrip
0.125
″
x 0.123
″
Microstrip
0.280
″
x 0.083
″
Microstrip
0.373
″
x 0.083
″
Microstrip
0.364
″
x 0.083
″
Microstrip
1.042
″
x 0.083
″
Microstrip
Z13, Z14
PCB
Arlon CuClad 250GX
–
–
0300
–
–
55
–
–
22
,
0.030
″
,
ε
= 2.55
r
Figure 3. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
0.1 pF Chip Capacitor
Part Number
ATC100B0R1JT500XT
ATC100B8R2BT500XT
C4532X7R1H475KT
ATC100B0R4JT500XT
C3225Y5V1H106ZT
ATC100B5R6JT500XT
ATC100B0R3JT500XT
ATC100B0R8JT500XT
ATC100B1R1JT500XT
ATC100B9R1JT500XT
C3216X7R2E104KT
C4532X7R1H685KT
C4532X7R1H475KT
C3225Y5V1H106ZT
477KXM063M
Manufacturer
ATC
C1
C2, C3
C4
8.2 pF Chip Capacitors
ATC
4.7
μ
F
,
5
0 V Chip Capacitor
0.4 pF Chip Capacitors
TDK
C5, C6
C7, C9
C8, C10
C11, C12
C13
ATC
10
μ
F
,
5
0 V Chip Capacitors
5.6 pF Chip Capacitors
TDK
ATC
0.3 pF Chip Capacitors
ATC
0.8 pF Chip Capacitor
ATC
C14
1.1 pF Chip Capacitor
ATC
C15, C16, C21
C17, C22
C18, C23
C19, C24
C20, C25
C26
9.1 pF Chip Capacitors
ATC
0.1
μ
F
,
2
50 V Chip Capacitors
6.8
μ
F
,
5
0 V Chip Capacitors
4.7
μ
F
,
5
0 V Chip Capacitors
10
μ
F
,
5
0 V Chip Capacitors
470
μ
F
,
6
3 V Electrolytic Capacitor
10 k
Ω
, 1/4 W Chip Resistors
TDK
TDK
TDK
TDK
Illinois Capacitor
Vishay
R1, R2
CRCW12061002FKEA
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
4
C26
C16
C17
C9
C18 C19
C20
C10
C11
C12
C13
C15
C1
C5
C14
C8
MW7IC2220N
Rev. 0
C23 C24
C6
C7
C25
C22
C2
R1
V
GG1
C3
R2
C4
C21
Figure 4. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
32.5
14
V
= 28 Vdc, P
= 2 W (Avg.), I
= 80 mA, I
= 300 mA
DD
out
DQ1
DQ2
32.1
31.7
31.3
30.9
13
Single
–
–
Carrier W
–
–
CDMA, 3.84 MHz Channel Bandwidth
12
11
Input Signal PAR = 7.5 dB
η
D
G
ps
@ 0.01% Probability on CCDF
IRL
10
— 4 4
— 4 6
— 4 8
— 5 0
— 5 2
— 5 4
30.5
30.1
29.7
29.3
28.9
28.5
0
— 1 4
— 1 5
— 1 6
— 1 7
— 1 8
— 1 9
PARC
— 0 . 2
— 0 . 4
— 0 . 6
— 0 . 8
— 1
ACPR
2060 2080 2100
2120 2140 2160 2180 2200
2220
f, FREQUENCY (MHz)
Figure 5. Output Peak
–
-to
–
-Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 2 Watts Avg.
33
22
32.5
32
21.5
21
η
D
V
= 28 Vdc, P
= 5 W (Avg.), I
= 300 mA, Single
–
–
Carrier W
–
–
CDMA, 3.84 MHz
= 80 mA
DD
out
DQ1
I
DQ2
G
Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
20.5
20
31.5
31
ps
ACPR
IRL
— 3 7
— 3 8
— 3 9
— 4 0
— 4 1
— 4 2
30.5
30
— 0 . 2
— 1 0
— 0 . 4
— 1 5
— 2 0
— 2 5
— 3 0
— 3 5
29.5
29
— 0 . 6
— 0 . 8
— 1
PARC
28.5
28
— 1 . 2
2060 2080 2100
2120 2140 2160 2180 2200
2220
f, FREQUENCY (MHz)
Figure 6. Output Peak
–
-to
–
-Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 5 Watts Avg.
33
32
31
30
29
28
33
I
= 450 mA
DQ2
I
= 120 mA
DQ1
32
31
30
29
28
375 mA
300 mA
100 mA
80 mA
60 mA
150 mA
225 mA
40 mA
V
I
= 28 Vdc
= 80 mA
V
I
= 28 Vdc
= 300 mA
DD
DD
27
26
27
26
DQ1
DQ2
f = 2140 MHz
f = 2140 MHz
1
10
50
1
10
50
P
, OUTPUT POWER (WATTS) CW
P ,
OUTPUT POWER (WATTS) CW
out
out
Figure 7. Power Gain versus Output Power
@ I
DQ1
= 80 mA
Figure 8. Power Gain versus Output Power
@ I
DQ2
= 300 mA
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
—
1
0
—
2
0
—
3
0
—
4
0
—
5
0
V
= 28 Vdc, P
= 18 W (PEP), I
= 300 mA, Two
–
–
T
one Measurements
= 80 mA
DD
out
DQ1
I
DQ2
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3
–
–
L
IM3
–
–
U
IM5
–
–
L
IM5
–
–
U
IM7
–
–
L
IM7
–
–
U
—
6
0
— 7 0
1
10
100
TWO
–
–
TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
— 2 5
— 3 0
— 3 5
— 4 0
— 4 5
— 5 0
— 5 5
31.5
31
1
0
40
G
ps
35
PARC
30.5
30
— 1
— 2
30
25
20
15
10
–
–
1 dB = 6.36 W
ACPR
–
–
3 dB = 12.7 W
–
–
2 dB = 9.45 W
29.5
29
— 3
— 4
V
= 28 Vdc, I
= 80 mA, I
= 300 mA, f = 2140 MHz
DQ2
DD
DQ1
Single
–
–
Carrier W
–
–
CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
η
D
28.5
— 5
2
4
6
8
10
12
14
P
, OUTPUT POWER (WATTS)
out
Figure 10. Output Peak
–
-to
–
-Average Ratio
Compression (PARC) versus Output Power
45
— 1 5
— 3 0
°
C
25
°
C
40
35
30
25
20
15
10
5
85
°
C
–
–
2 0
η
D
G
T
=
–
–
30
°
C
ps
25
°
C
C
— 2 5
— 3 0
°
C
— 3 0
85
°
C
— 3 5
— 4 0
25
°
C
ACPR
V
= 28 Vdc, I
= 300 mA, f = 2140 MHz
Single
–
–
Carrier W
–
–
CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
= 80 mA
DD
DQ1
— 4 5
— 5 0
— 5 5
— 6 0
I
DQ2
0
1
10
50
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 11. Single
–
-Carrier W
–
-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
36
30
24
0
S21
— 5
— 1 0
— 1 5
— 2 0
— 2 5
S11
18
12
6
V
= 28 Vdc
= 80 mA, I
DD
I
= 300 mA
DQ1
DQ2
1600 1750
1900 2050 2200 2350
2500 2650 2800
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
W
–
-CDMA TEST SIGNAL
100
10
10
0
— 1 0
— 2 0
— 3 0
— 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
— 5 0
— 6 0
W
–
–
CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
±
5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
–
–
ACPR in 3.84 MHz
Integrated BW
0.001
— 7 0
— 8 0
0.0001
0
1
2
3
4
5
6
7
8
9
10
— 9 0
PEAK
–
–
TO
–
–
A
VERAGE (dB)
–
–
100
Figure 13. CCDF W
–
-CDMA IQ Magnitude
Clipping, Single
–
-Carrier Test Signal
— 9
— 7 . 2
— 5 . 4
— 3 . 6
— 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 14. Single
–
-Carrier W
–
-CDMA Spectrum
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
8
Z =
50
Ω
o
f = 2220 MHz
f = 2060 MHz
Z
in
f = 2220 MHz
Z
load
f = 2060 MHz
V
= 28 Vdc, I
= 80 mA, I
= 300 mA, P
= 2 W Avg.
DQ2 out
DD
DQ1
f
Z
in
Z
load
MHz
2060
2080
2100
2120
2140
2160
2180
2200
2220
Ω
Ω
49.57
–
–
j
3.62
49.49
–
–
j
3.77
49.42
–
–
j
3.94
49.35
–
–
j
4.12
49.30
–
–
j
4.29
49.25
–
–
j
4.48
49.21
–
–
j
4.67
49.17
–
–
j
4.86
49.15
–
–
j
5.06
11.06
–
–
j
3.26
10.83
–
–
j
2.96
10.55
–
–
j
2.62
10.30
–
–
j
2.23
10.08
–
–
j
1.86
9.86
–
–
j
1.51
9.65
–
–
j
1.13
9.45
–
–
j
0.76
9.25
–
–
j
0.40
Z
in
=
Device input impedance as measured from
gate to ground.
Z
load
=
T
e
st circuit impedance as measured
from drain to ground.
Output
Device
Matching
Network
Under Test
Z
Z
in
load
Figure 15. Series Equivalent Input and Load Impedance
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source S
–
-Parameters
(V =
28 V, I
= 90 mA, I
= 420 mA, T
= 25
°
C, 50 Ohm System)
DQ2 A
DD
DQ1
S
S
S
S
22
11
21
12
f
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
MHz
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
3250
3300
3350
3400
3450
0.452
0.407
0.354
0.316
0.279
0.222
0.140
0.046
0.094
0.238
0.254
0.241
0.252
0.201
0.174
0.148
0.135
0.197
0.244
0.291
0.340
0.391
0.435
0.475
0.455
0.535
0.571
0.598
0.623
0.643
0.668
0.681
0.694
0.712
0.724
0.726
0.705
0.743
0.748
0.753
134
117
0.356
0.757
1.430
2.330
3.690
5.800
9.570
17.000
33.600
58.300
47.800
34.300
27.700
23.900
21.100
18.800
15.800
12.600
11.100
10.400
9.750
9.230
8.760
8.290
7.050
6.690
5.980
5.170
4.370
3.690
3.100
2.580
2.130
1.760
1.440
1.170
0.928
0.780
0.652
0.555
7.81
— 7 . 8
0.001
0.000
0.000
0.001
0.001
0.002
0.003
0.004
0.007
0.009
0.006
0.004
0.004
0.003
0.003
0.003
0.003
0.003
0.002
0.002
0.002
0.001
0.001
0.001
0.001
0.001
0.001
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.003
0.003
0.003
0.003
–
–
108
–
–
67.7
–
–
65.8
–
–
27.1
–
–
43.4
–
–
21.9
–
–
24.8
–
–
33.7
–
–
41.8
–
–
86.4
—
1
1 8
–
–
122
–
–
125
–
–
128
–
–
130
–
–
131
–
–
139
–
–
155
–
–
156
–
–
157
–
–
147
–
–
150
–
–
144
–
–
137
–
–
90.2
–
–
106
–
–
103
–
–
96.5
–
–
103
–
–
96.2
–
–
106
–
–
107
–
–
87.9
–
–
96.1
–
–
99.6
–
–
82.4
–
–
66.9
–
–
77.2
— 8 8
0.979
0.969
0.955
0.935
0.909
0.878
0.833
0.737
0.476
0.396
0.873
0.927
0.911
0.891
0.878
0.872
0.882
0.906
0.919
0.926
0.933
0.938
0.942
0.945
0.950
0.955
0.955
0.954
0.955
0.954
0.951
0.952
0.957
0.959
0.959
0.962
0.963
0.959
0.955
0.955
160
157
154
151
148
143
137
124
91.7
–
–
79.7
–
–
149
–
–
171
–
–
179
177
175
175
175
174
173
171
170
169
168
166
166
164
163
162
162
161
161
161
160
160
160
159
159
158
157
96.5
85.1
68
— 3 1
–
–
52.1
–
–
73.6
–
–
93.3
—
1
1 3
–
–
137
–
–
173
124
49.5
30.4
21.9
135
56.4
–
–
29.2
–
–
84.1
–
–
120
–
–
142
–
–
162
168
59.5
22.9
–
–
3.98
–
–
28.2
–
–
51.8
–
–
75.9
–
–
100
—
1
1 8
–
–
132
–
–
147
–
–
163
–
–
179
164
103
35.4
1.73
—
1
1 . 1
— 1 9
–
–
26.9
–
–
35.2
–
–
44.4
— 4 6
146
129
–
–
60.2
–
–
71.2
— 8 2
112
95.1
78.5
63.1
48.7
35.4
22.7
11
–
–
92.9
–
–
102
–
–
109
—
1
1 6
–
–
121
–
–
124
–
–
127
–
–
130
–
–
130
–
–
132
–
–
135
–
–
137
–
–
0.057
–
–
10.9
–
–
21.1
–
–
28.7
— 3 7
–
–
44.3
–
–
50.3
–
–
78.6
156
(continued)
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
10
Table 7. Common Source S
–
-Parameters
(V =
28 V, I
= 90 mA, I
= 420 mA, T
= 25
°
C, 50 Ohm System)
(continued)
DQ2 A
DD
DQ1
S
S
S
S
22
11
21
12
f
|S
|
∠ φ
|S
|
∠ φ
|S
|
∠ φ
|S |
22
∠ φ
155
154
153
151
150
148
146
145
144
144
144
MHz
11
21
12
3500
3550
3600
3650
3700
3750
3800
3850
3900
3950
4000
0.759
0.765
0.770
0.774
0.780
0.795
0.810
0.821
0.839
0.855
0.862
–
–
140
–
–
144
–
–
148
–
–
153
–
–
159
–
–
164
–
–
170
–
–
175
–
–
178
179
0.486
0.440
0.401
0.370
0.338
0.306
0.273
0.239
0.207
0.178
0.156
–
–
56.1
–
–
62.4
–
–
69.7
–
–
77.4
–
–
85.1
–
–
93.2
–
–
101
–
–
107
—
1
11
0.004
0.004
0.004
0.005
0.006
0.006
0.008
0.008
0.008
0.008
0.008
–
–
81.1
— 8 2
0.954
0.946
0.941
0.941
0.940
0.933
0.928
0.934
0.936
0.927
0.935
–
–
85.9
–
–
96.4
–
–
94.9
–
–
99.3
—
1
1 0
—
1
1 3
—
1
1 2
—
1
1 7
–
–
123
—
1
1 4
—
1
1 6
176
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
11
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
51
50
49
52
Ideal
51
50
49
48
47
46
45
44
43
42
41
Ideal
P3dB = 48.06
dBm (64 W)
P1dB = 46.99 dBm (50 W)
P3dB = 46.95 dBm (50 W)
Actual
P1dB = 45.93 dBm (39 W)
48
47
46
45
44
V
= 28 Vdc, I
= 90 mA
= 420 mA, Pulsed CW
10
μ
sec(on), 10% Duty Cycle
DD
DQ1
Actual
I
DQ2
V
= 28 Vdc, I
= 90 mA, I
= 420 mA
DQ2
Pulsed CW, 10
μ
sec(on), 10% Duty Cycle
DD
DQ1
f = 2110 MHz
f = 2170 MHz
40
7
8
9
10 11 12 13 14 15 16 17 18 19
P ,
INPUT POWER (dBm)
7
8
9
10 11 12 13 14 15 16 17 18
19
P ,
INPUT POWER (dBm)
in
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Test Impedances per Compression Level
Z
Z
load
Z
Z
load
source
source
Ω
Ω
Ω
Ω
P1dB
40.41 + j2.31
3.13
–
–
j
4.89
P1dB
44.66
–
–
j
5.79
3.06
–
–
j
5.22
Figure 16. Pulsed CW Output Power
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 2110 MHz
versus Input Power @ 28 V @ 2170 MHz
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
12
+
C23
V
DD2
NC
1
2
3
4
5
DUT
16
15
V
DD1
C13 C14 C15
C16 C17
NC
NC
NC
Z11
C9
C10
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
14
6
C12
C1
7
8
9
NC
NC
C11
Z12
Quiescent Current
Temperature
Compensation
C2
13
12
10
11
V
V
GG1
GG2
R1
C3
C18 C19 C20
C21 C22
R2
C5 C4 C6
C7 C8
Z1
Z2
Z3
Z4
Z5
Z6
0.090
″
x 0.083
″
Microstrip
2.107
″
x 0.083
″
Microstrip
0.016
″
x 0.083
″
x 0.055
″
T
a
per
0.106
″
x 0.055
″
Microstrip
0.570
″
x 0.322
″
Microstrip
0.254
″
x 0.322
″
Microstrip
Z7
Z8
Z9
Z10
Z11, Z12
PCB
0.388
″
x 0.123
″
Microstrip
0.330
″
x 0.083
″
Microstrip
0.323
″
x 0.083
″
Microstrip
0.364
″
x 0.083
″
Microstrip
1.042
″
x 0.083
″
Microstrip
Arlon CuClad 250GX
–
–
0300
–
–
55
–
–
22
,
0.030
″
,
ε
= 2.55
r
Figure 18. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic — TD
–
-SCDMA
Table 8. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — TD
–
-SCDMA
Part
Description
1 pF Chip Capacitor
Part Number
ATC100B1R0JT500XT
ATC100B8R2BT500XT
C4532X7R1H475KT
ATC100B0R4JT500XT
C3225Y5V1H106ZT
ATC100B5R6JT500XT
ATC100B1R1JT500XT
ATC100B9R1JT500XT
C3216X7R2E104KT
C4532X7R1H685KT
C4532X7R1H475KT
C3225Y5V1H106ZT
477KXM063M
Manufacturer
ATC
C1
C2, C3
C4
8.2 pF Chip Capacitors
ATC
4.7
μ
F
,
5
0 V Chip Capacitor
0.4 pF Chip Capacitors
TDK
C5, C6
C7, C9
C8, C10
C11
ATC
10
μ
F
,
5
0 V Chip Capacitors
5.6 pF Chip Capacitors
TDK
ATC
1.1 pF Chip Capacitor
ATC
C12, C13, C18
C14, C19
C15, C20
C16, C21
C17, C22
C23
9.1 pF Chip Capacitors
ATC
0.1
μ
F
,
2
50 V Chip Capacitors
6.8
μ
F
,
5
0 V Chip Capacitors
4.7
μ
F
,
5
0 V Chip Capacitors
10
μ
F
,
5
0 V Chip Capacitors
470
μ
F
,
6
3 V Electrolytic Capacitor
11
Ω
, 1/4 W Chip Resistors
TDK
TDK
TDK
TDK
Illinois Capacitor
Vishay
R1, R2
CRCW120611R0FKEA
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
13
C23
C13
C14
C9
C15 C16
C17
C10
C12
C1
C5
C11
C8
MW7IC2220N
Rev. 0
C20 C21
C6
C7
C22
C19
C2
R1
V
GG1
C3
R2
C4
C18
Figure 19. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout — TD
–
-SCDMA
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
14
TYPICAL CHARACTERISTICS
0
—
1
0
—
2
0
—
3
0
30
25
20
15
6
–
–
Carrier TD
–
–
SCDMA
V
= V
= 28 V
D1
D2
I
= 190 mA, I
= 300 mA
DQ1
DQ2
η
f = 2017.5 MHz
PAR = 7.7 dB
D
Adj
–
–
L
Adj
–
–
U
Alt
–
–
L
Alt
–
–
U
10
5
—
4
0
—
5
0
— 6 0
0
0
2
4
6
8
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 20. 6
–
-Carrier TD
–
-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD
–
-SCDMA TEST SIGNAL
— 3 0
— 4 0
— 5 0
1.28 MHz
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
— 6 0
— 7 0
— 8 0
— 9 0
— A
L
T 2
i n
1.28 MHz BW
–
–
3.2 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
–
–
100
—
1
1 0
–
–
120
–
–
130
— A
L
T 1
i n
1.28 MHz BW
–
–
1.6 MHz Offset
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Center 2.0175 GHz
2.5 MHz
f, FREQUENCY (MHz)
Span 25 MHz
Figure 21. 6
–
-Carrier TD
–
-SCDMA Spectrum
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
15
RF Device Data
Freescale Semiconductor
Z =
50
Ω
o
f = 1950 MHz
f = 2070 MHz
Z
in
f = 2070 MHz
f = 1950 MHz
Z
load
V
= 28 Vdc, I
= 190 mA, I
= 300 mA
DD
DQ1
DQ2
f
Z
in
Z
load
MHz
1950
1960
1970
1980
1990
2000
2010
2020
2030
2040
2050
2060
Ω
Ω
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
50 + j0
15.539
–
–
j
10.702
14.953
–
–
j
10.522
14.373
–
–
j
10.327
13.837
–
–
j
10.120
13.294
–
–
j
9.886
12.768
–
–
j
9.608
12.275
–
–
j
9.298
11.832
–
–
j
9.000
11.422
–
–
j
8.708
11.015
–
–
j
8.441
10.621
–
–
j
8.175
10.235
–
–
j
7.916
9.868
–
–
j
7.644
2070
=
Z
Z
Device input impedance as measured from
gate to ground.
in
=
T
e
st circuit impedance as measured
from drain to ground.
load
Output
Device
Matching
Network
Under Test
Z
Z
in
load
Figure 22. Series Equivalent Input and Load Impedance — TD
–
-SCDMA
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
16
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
17
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
18
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
19
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
20
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
21
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
22
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
23
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
24
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
25
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
•
•
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
Electromigration MTTF Calculator
T
o
ols tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
2
Sept. 2008
Jan. 2009
May 2011
•
•
•
Initial Release of Data Sheet
Added Fig. 13, MTTF versus Junction
T
e
mperature, p. 8
Modified data sheet to reflect RF
T
e
st Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 3
•
•
•
•
•
•
•
•
Fig. 3,
T
e
st Circuit Schematic, Z
–
–
list, changed Z13, Z14 from 0.564
″
x 0.083
″
Microstrip to 1.042
″
x
0.083
″
Microstrip, p. 4
Fig. 18,
T
e
st Circuit Schematic, Z
–
–
list, changed Z11, Z12 from 0.564
″
x 0.083
″
Microstrip to 1.042
″
x
0.083
″
Microstrip, p. 13
Changed ESD Human Body Model rating from Class 1B to Class 0 to reflect recent ESD test results of the
device, p. 2
Fig. 13, MTTF versus Junction
T
e
mperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and
T
o
ols.
Updated Fig. 14, CCDF W
–
–
CDMA IQ Magnitude Clipping, Single
–
–
Carrier
T
e
st Signal to better represent
production test signal, p. 8 (renumbered as Fig. 13 after Fig. 13 removed)
Updated Fig. 15, Single
–
–
Carrier W
–
–
CDMA Spectrum to show the undistorted input test signal, p. 8
(renumbered as Fig. 14 after Fig. 13 removed)
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages to
Product Documentation, Application Notes, p. 26
Added Electromigration MTTF Calculator availability to Product Software, p. 26
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
26
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