NXP-Semicon-MW7IC3825GNR1
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Document Number: MW7IC3825N
Rev. 1, 11/2010
Freescale Semiconductor
T
e
chnical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC3825N wideband integrated circuit is designed with on
–
–
chip
matching that makes it usable from 3400
–
–
3600 MHz. This multi
–
–
stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
MW7IC3825NR1
MW7IC3825GNR1
MW7IC3825NBR1
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 130 mA, I
DQ2
= 230 mA,
P
out
= 5 Watts Avg., f = 3600 MHz, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCD
F
.
3400
–
-3600 MHz, 5 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Power Gain — 25 dB
Power Added Efficiency — 15%
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset —
–
–
48 dBc in 1 MHz Channel Bandwidth
Driver Applications
CASE 1886
–
-01
TO
–
-270 WB
–
-16
PLASTIC
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 190 mA, I
DQ2
= 230 mA,
P
out
= 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM 802.16d, 64 QAM
3
/
4
,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCD
F
.
MW7IC3825NR1
Power Gain — 23.5 dB
Power Added Efficiency — 3.5%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset —
–
–
55 dBc in 1 MHz Channel Bandwidth
CASE 1887
–
-01
TO
–
-270 WB
–
-16 GULL
PLASTIC
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 25 Watts CW
Output Power
Stable into a 5:1 VSWR. All Spurs Below
–
–
60 dBc @ 0 to 44 dBm CW P
out
MW7IC3825GNR1
•
•
Typical P
out
@ 1 dB Compression Point
≃
30 Watts CW
Features
•
•
100% PAR
T
e
sted for Guaranteed Output Power Capability
CASE 1329
–
-09
TO
–
-272 WB
–
-16
PLASTIC
Characterized with Series Equivalent Large
–
–
Signal Impedance Parameters
and Common Source S
–
–
Parameters
MW7IC3825NBR1
•
•
On
–
–
Chip Matching (50 Ohm Input, RF Choke to Ground)
Integrated Quiescent Current
T
e
mperature Compensation with
Enable/Disable Function
(1)
•
•
•
•
•
Integrated ESD Protection
Greater Negative Gate
–
–
Source Voltage Range for Improved Class C Operation
225
°
C Capable Plastic Package
RoHS Compliant
In
T
a
pe and Reel. R1 Suffix = 500 Units, 44 mm
T
a
pe Width, 13 inch Reel.
GND
1
2
3
4
5
16
15
GND
NC
V
DS1
V
V
GS2
GS1
NC
V
DS1
RF
6
14
RF /V
out DS2
in
RF
RF /V
out DS2
in
7
8
NC
GS1
GS2
DS1
GND
V
V
V
9
10
11
13
12
NC
GND
V
V
GS1
GS2
Quiescent Current
Temperature Compensation
(
T
o
p View)
(1)
Note: Exposed
backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer
to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf.Select Documentation/Application Notes
–
–
A
N1977 or AN1987.
©
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
–
–
0.5, +65
–
–
6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°
C
Drain
–
–
Source Voltage
Gate
–
–
Source Voltage
Operating Voltage
V
DS
V
GS
V
DD
Storage
T
e
mperature Range
Case Operating
T
e
mperature
Operating Junction
T
e
mperature
Input Power
T
stg
—
6
5 to +150
150
T
C
°
C
(1,2)
T
225
°
C
J
P
45
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°
C/W
JC
WiMAX Application
(Case
T
e
mperature 71
°
C, P
= 5 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 130 mA
= 230 mA
4.7
1.3
DQ1
DQ2
out
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22
–
–
A
1
14)
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020
3
260
°
C
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1
–
– Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
(V =
1.5 Vdc, V
= 0 Vdc)
I
1
GS
DS
Stage 1
–
– On Characteristics
Gate Threshold Voltage
V
V
1.2
—
2
2.7
—
5
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V =
10 Vdc, I
= 25
μ
Adc)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 130 mA)
2.7
4.2
DS
DQ1
(4)
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 130 mA, Measured in Functional
T
e
st)
V
3.5
DD
DQ1
1. Continuous
use at maximum temperature will affect MTT
F
.
2. MTTF
calculator available at http://www.freescale.com/rf. Select Software &
T
o
ols/Development
T
o
ols/Calculators to access MTTF
calculators by product.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
–
–
A
N1955.
4. V
= 1.55 x V
. Parameter measured on Freescale
T
e
st Fixture, due to resistive divider network on the board. Refer to
T
e
st Circuit
GG
GS(Q)
schematic.
(continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
A
Characteristic
Stage 2
–
– Off Characteristics
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
(V =
1.5 Vdc, V
= 0 Vdc)
I
1
GS
DS
Stage 2
–
– On Characteristics
Gate Threshold Voltage
V
V
1.2
—
2
2.7
—
4
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V =
10 Vdc, I
= 120
μ
Adc)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 230 mA)
2.7
3.3
0.5
DS
DQ2
(1)
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 230 mA, Measured in Functional
T
e
st)
V
2.5
0.2
DD
DQ2
Drain
–
–
Source On
–
–
V
oltage
(V =
10 Vdc, I
= 1 Adc)
V
1.2
GS
D
(2)
Stage 2
–
– Dynamic Characteristics
Output Capacitance
C
oss
—
72.3
—
pF
(V =
28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
= 0 Vdc)
DS
GS
(3)
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 130 mA, I
= 230 mA, P
= 5 W Avg.,
DQ2 out
DD
DQ1
3
f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM
/ ,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
4
on CCD
F
.
A
CPR measured in 1 MHz Channel Bandwidth @
±
8.5 MHz Offset.
Power Gain
G
21
12
7.5
—
25
15
32
—
dB
%
ps
Power Added Efficiency
PAE
PAR
ACPR
IRL
Output Peak
–
–
to
–
–
Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
8.5
— 4 8
— 1 2
—
dB
dBc
dB
=
— 4 5
— 6
—
Typical Performances OFDM Signal
–
– 10 MHz Channel Bandwidth
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
DD
DQ1
3
130 mA, I
= 230 mA, P
= 5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM
/ ,
4 Bursts, 10 MHz Channel
DQ2
out
4
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCD
F
.
(4)
Relative Constellation Error
RCE
EVM
—
—
— 3 3
2.2
—
—
dB
(4)
Error Vector Magnitude
% rms
1. V
= 1.22 x V
. Parameter measured on Freescale
T
e
st Fixture, due to resistive divider network on the board. Refer to
T
e
st Circuit
GS(Q)
GG
schematic.
2. Part
internally matched both on input and output.
3. Measurement
made with device in straight lead configuration before any lead forming operation is applied.
4. RCE
= 20Log(EVM/100).
(continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
A
Characteristic
Typical Performances
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
Symbol
Min
Typ
= 230 mA, 3400
–
–
3600 MHz Bandwidth
DQ2
Max
Unit
= 130 mA, I
—
DD
DQ1
P
@ 1 dB Compression Point, CW
P1dB
IMD
30
—
W
out
IMD Symmetry @ 2 W PE
P
, P
w
here IMD Third Order
MHz
out
sym
—
83
—
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
—
90
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 200 MHz Bandwidth @ P
= 5 W Avg.
G
—
—
0.7
—
—
dB
out
F
Average Deviation from Linear Phase in 200 MHz Bandwidth
Φ
3.15
°
@ P
= 25 W CW
out
Average Group Delay @ P
= 25 W CW, f = 3500 MHz
Delay
—
—
3.21
—
—
ns
out
Part
–
–
to
–
–
Part Insertion Phase Variation @ P
= 25 W CW,
∆Φ
13.88
°
out
f = 3500 MHz, Six Sigma Window
Gain Variation over
T
e
mperature
(
–
–
30
°
C to +85
°
C)
∆
G
—
—
0.046
0.015
—
—
dB/
°
C
dB/
°
C
Output Power Variation over
T
e
mperature
∆
P1dB
(
–
–
30
°
C to +85
°
C)
Typical Driver Performances
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 190 mA, I
= 230 mA, P
= 0.5 W Avg.,
DQ2 out
DD
DQ1
3
f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM
/ ,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @
4
0.01% Probability on CCD
F
.
A
CPR measured in 1 MHz Channel Bandwidth @
±
8.5 MHz Offset.
Power Gain
G
—
—
—
—
—
23.5
3.5
—
—
—
—
—
dB
%
ps
Power Added Efficiency
PAE
PAR
ACPR
IRL
Output Peak
–
–
to
–
–
Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
9.2
dB
dBc
dB
— 5 5
— 1 2
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
4
V
D1
NC
1
2
3
4
5
DUT
16
15
NC
C1
C7
C5
V
GS2
GS1
V
RF
INPUT
NC
C6
C17
Z13
Z1
Z2
Z4
Z3
Z6
Z5
Z8
Z7
Z10
Z9
Z12
Z11
14
6
NC
7
8
9
Quiescent Current
Temperature
Compensation
C15
R1
C14
V
G1
G2
NC 13
12
10
11
V
D1
V
R2
C16
C13 C9
V
D2
+
C4 C3 C2
C12
Z42
Z41
Z26
Z25
Z24
RF
OUTPUT
Z40
Z20
Z21
Z31
Z33
Z37
Z14
Z15 Z16 Z17 Z18 Z19
Z23
Z28 Z29
Z30
Z36 Z38
Z39
C8
Z43
Z22
Z27
Z32
Z34
Z35
Z44
Z45
R3
C11
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.118
″
x 0.044
″
Microstrip
0.205
″
x 0.044
″
Microstrip
0.083
″
x 0.096
″
Microstrip
0.195
″
x 0.044
″
Microstrip
0.094
″
x 0.132
″
Microstrip
0.509
″
x 0.044
″
Microstrip
0.083
″
x 0.091
″
Microstrip
0.372
″
x 0.044
″
Microstrip
0.078
″
x 0.192
″
Microstrip
0.078
″
x 0.044
″
Microstrip
0.079
″
x 0.141
″
Microstrip
0.243
″
x 0.044
″
Microstrip
0.605
″
x 0.044
″
Microstrip
0.232
″
x 0.340
″
Microstrip
0.042
″
x 0.340
″
Microstrip
0.112
″
x 0.150
″
Microstrip
Z17
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26
Z27
Z28
Z29
Z30
Z31
0.230
″
x 0.090
″
Microstrip
0.125
″
x 0.125
″
Microstrip
0.228
″
x 0.100
″
Microstrip
0.076
″
x 0.165
″
Microstrip
0.289
″
x 0.100
″
Microstrip
0.083
″
x 0.110
″
Microstrip
0.375
″
x 0.100
″
Microstrip
0.185
″
x 0.080
″
Microstrip
0.079
″
x 0.020
″
Microstrip
0.185
″
x 0.020
″
Microstrip
0.185
″
x 0.100
″
Microstrip
0.093
″
x 0.100
″
Microstrip
0.063
″
x 0.044
″
Microstrip
0.103
″
x 0.044
″
Microstrip
0.080
″
x 0.121
″
Microstrip
Z32
Z33
Z34
Z35
Z36
Z37
Z38
Z39
Z40
Z41
Z42
Z43
Z44
Z45
0.080
″
x 0.112
″
Microstrip
0.193
″
x 0.044
″
Microstrip
0.080
″
x 0.051
″
Microstrip
0.157
″
x 0.055
″
Microstrip
0.080
″
x 0.044
″
Microstrip
0.080
″
x 0.131
″
Microstrip
0.040
″
x 0.044
″
Microstrip
0.073
″
x 0.044
″
Microstrip
0.574
″
x 0.044
″
Microstrip
L = 0.305
″
wi = 0.150
″
Angle = 130
°
Microstrip
0.523
″
x 0.044
″
Microstrip
0.574
″
x 0.044
″
Microstrip
L = 0.305
″
wi = 0.150
″
Angle = 130
°
Microstrip
0.523
″
x 0.044
″
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
T
a
conic
TLX8
–
–
0300, 0.020
″
,
ε
= 2.55
r
Figure 3. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Schematic
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
5
Table 6. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
2.2
μ
F
,
5
0 V Chip Capacitors
10
μ
F
,
5
0 V Chip Capacitors
2.2 pF Chip Capacitors
Part Number
C3225X7R1H225M
Manufacturer
TDK
C1, C13, C14
C2, C3
C5750X5R1H106M
TDK
C4, C5, C9, C10
C6, C7
C8
ATC100B2R2BT500XT
ATC100B0R5BT500XT
ATC100B2R0BT500XT
ATC100B330JT500XT
222213668221
ATC
0.5 pF Chip Capacitors
ATC
2 pF Chip Capacitor
ATC
C11
33 pF Chip Capacitor
ATC
C12
220
μ
F
,
6
3 V Electrolytic Capacitor
4.7
μ
F
,
5
0 V Chip Capacitors
0.3 pF Chip Capacitor
BC Components
TDK
C15, C16
C17
C4532X5R1H475M
ATC100B0R3BT500XT
CRCW08051001FKEA
CRCW120610R0FKEA
ATC
R1, R2
R3
1 k
Ω
, 1/8 W Chip Resistors
10
Ω
, 1/4 W Chip Resistor
Vishay
Vishay
V
V
D2
D1
C12
C2
MW7IC3825N/NB
Rev. 7
C3
C4
C1
C5
C6
C7 C17
C8
C9
C13
C15
C14
C10
R1
R2
V
G1
R3
C16
C11
V
V
D1
G2
Figure 4. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
25.2
18
V
= 28 Vdc, P
= 5 W (Avg.), I
= 130 mA, I
= 230 mA
DD
out
DQ1
DQ2
25
24.8
24.6
24.4
24.2
24
17
OFDM 802.16d, 64 QAM
3
/
, 4 Bursts, 10 MHz Channel Bandwidth
4
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
16
15
h
D
G
14
ps
— 4 4
— 4 5
— 4 6
— 4 7
— 4 8
— 4 9
0
— 7
PARC
— 0 . 5
— 8
23.8
23.6
— 1
— 9
IRL
— 1 . 5
— 2
— 1 0
—
1
1
— 1 2
ACPR
23.4
23.2
— 2 . 5
3400 3425 3450
3475 3500 3525 3550 3575
3600
f, FREQUENCY (MHz)
Figure 5. WiMAX Broadband Performance @ P
out
= 5 Watts Avg.
25.6
25.4
25.2
25
4
V
= 28 Vdc, P
= 20 dBm (Avg.), I
= 130 mA, I
= 230 mA
DD
out
DQ1
DQ2
3
OFDM 802.16d, 64 QAM
3
/
, 4 Bursts, 10 MHz Channel Bandwidth
4
2
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
1
h
D
G
24.8
24.6
24.4
24.2
24
0
ps
PARC
— 5 4
— 5 5
— 7
— 8
— 0
— 0 . 5
— 5 6
— 5 7
— 5 8
— 5 9
— 9
— 1
IRL
— 1 . 5
— 1 0
—
1
1
— 1 2
ACPR
23.8
23.6
— 2
— 2 . 5
3400 3425 3450
3475 3500 3525 3550 3575
3600
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ P
out
= 20 dBm Avg.
26
25
24
23
22
21
20
26
V
I
= 28 Vdc
= 130 mA
V
= 28 Vdc
= 230 mA
DD
DD
I
= 195 mA
DQ1
I
= 350 mA
DQ2
I
DQ1
DQ2
25
24
23
22
21
20
f = 3500 MHz
f = 3500 MHz
290 mA
230 mA
160 mA
130 mA
100 mA
175 mA
110 mA
70 mA
1
1
10
, OUTPUT POWER (WATTS) CW
100
10
100
P
P
, OUTPUT POWER (WATTS) CW
out
out
Figure 7. Power Gain versus Output Power
@ I
DQ1
= 130 mA
Figure 8. Power Gain versus Output Power
@ I
DQ2
= 230 mA
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
—
1
0
V
= 28 Vdc, P
= 2 W (PEP), I
= 130 mA
DD
out
DQ1
I
= 230 mA, Two
–
–
T
one Measurements
DQ2
—
2
0
(f1 + f2)/2 = Center Frequency of 3500 MHz
IM3
–
–
L
—
3
0
IM3
–
–
U
IM5
–
–
L
—
4
0
IM5
–
–
U
IM7
–
–
U
IM7
–
–
L
—
5
0
— 6 0
0.1
1
10
100
TWO
–
–
TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
PARC
— 2 0
— 2 5
— 3 0
— 3 5
— 4 0
25
24.5
24
40
1
0
V
= 28 Vdc, I
= 130 mA, I
= 230 mA
DD
DQ1
DQ2
f = 3500 MHz, OFDM 802.16d
G
ps
64 QAM
3
/
, 4 Bursts
35
30
25
4
PARC
— 1
— 2
— 3
— 4
— 5
η
D
–
–
1 dB = 6 W
–
–
2 dB = 8.5 W
23.5
23
ACPR
— 3
d B =
1
1
. 5 W
20
15
10
— 4 5
— 5 0
22.5
22
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
1
5
9
13
17
21
P
, OUTPUT POWER (WATTS)
out
Figure 10. Output Peak
–
-to
–
-Average Ratio
Compression (PARC) versus Output Power
60
50
40
30
— 2 0
— 2 5
— 3 0
— 3 5
— 4 0
— 4 5
— 5 0
V
= 28 Vdc, I
= 130 mA, I
= 230 mA
DD
DQ1
DQ2
f = 3500 MHz, OFDM 802.16d, 64 QAM
3
/
4 Bursts, 10 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
4
25
_
C
— 3 0
_
C
— 3 0
_
C
25
_
C
η
85
_
C
G
T
=
–
–
30
_
C
85
_
C
ps
C
D
85
_
C
20
10
25
_
C
ACPR
10
0
1
100
P
, OUTPUT POWER (WATTS) AVG. WiMAX
out
Figure 11. WiMAX, ACPR, Power Gain and
Drain Efficiency versus Output Power
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
8
TYPICAL CHARACTERISTICS
9
30
25
15
10
10
S21
20
15
10
5
5
8
10
10
0
2nd Stage
— 5
7
— 1 0
— 1 5
— 2 0
S11
0
6
1st Stage
10
10
— 5
—
1
0
— 2 5
— 3 0
— 3 5
— 4 0
5
—
1
5
—
2
0
— 2 5
V
I
= 28 Vdc
= 130 mA, I
DD
= 230 mA
DQ1
DQ2
4
10
90
110
130
150
170
190
210
230
250
2400 2600
2800 3000 3200 3400 3600 3800 4000 4200
T , JUNCTION TEMPERATURE (
°
C)
J
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
This above graph displays calculated MTTF in hours when the device
is operated at V
= 28 Vdc, P
= 5 W Avg., and PAE = 15%.
DD
out
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
WIMAX TEST SIGNAL
100
10
— 1 0
— 2 0
10 MHz
Channel BW
Input Signal
— 3 0
— 4 0
— 5 0
1
0.1
0.01
3
OFDM 802.16d, 64 QAM
/
, 4 Bursts
— 6 0
— 7 0
4
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
0.001
0.0001
— 8 0
— 9 0
0
2
4
6
8
10
ACPR in 1 MHz
Integrated BW
ACPR in 1 MHz
Integrated BW
PEAK
–
–
TO
–
–
A
VERAGE (dB)
Figure 14. OFDM 802.16d Test Signal
— 2 0
— 1 5
— 1 0
— 5
0
5
10
15
20
f, FREQUENCY (MHz)
Figure 15. WiMAX Spectrum Mask Specifications
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
9
Z =
50
Ω
o
f = 3600 MHz
f = 3400 MHz
Z
load
f = 3400 MHz
f = 3600 MHz
Z
source
V
= 28 Vdc, I
= 130 mA, I
= 230 mA, P
= 5 W Avg.
out
DD
DQ1
DQ2
f
Z
Z
load
source
MHz
3400
3425
3450
3475
3500
3525
3550
3575
3600
Ω
Ω
31.82
–
–
j
19.29
32.86
–
–
j
19.70
33.95
–
–
j
20.93
35.11
–
–
j
22.97
36.33
–
–
j
25.82
37.61
–
–
j
29.49
38.95
–
–
j
33.97
40.35
–
–
j
39.26
41.81
–
–
j
45.37
4.58
–
–
j
7.62
4.42
–
–
j
7.33
4.22
–
–
j
7.20
4.13
–
–
j
7.22
4.13
–
–
j
7.26
4.07
–
–
j
7.20
3.81
–
–
j
6.99
3.48
–
–
j
6.77
3.21
–
–
j
6.72
Z
Z
=
T
e
st circuit impedance as measured from
gate to ground.
source
=
T
e
st circuit impedance as measured from
drain to ground.
load
Output
Device
Input
Matching
Network
Under Test
Matching
Network
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
10
Table 7. Common Source S
–
-Parameters
(V =
28 V, I
= 130 mA, I
= 230 mA, T
= 25
°
C, 50 Ohm System)
DQ2 A
DD
DQ1
S
S
S
S
22
11
21
12
f
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
MHz
3000
3050
3100
3150
3200
3250
3300
3350
3400
3450
3500
3550
3600
3650
3700
3750
3800
3850
3900
3950
4000
0.260
0.177
0.139
0.117
0.190
0.283
0.395
0.493
0.575
0.603
0.537
0.479
0.458
0.465
0.427
0.429
0.407
0.395
0.388
0.384
0.389
–
–
47.0
–
–
63.4
–
–
68.0
–
–
59.6
–
–
61.1
–
–
85.6
–
–
1
18.0
–
–
155.0
166.0
126.0
82.8
7.550
8.610
–
–
61.6
–
–
102.0
–
–
143.0
177.0
139.0
95.7
0.00485
0.00423
0.00424
0.00293
0.00322
0.00533
0.00762
0.00950
0.0116
–
–
43.9
–
–
72.7
–
–
98.1
–
–
122.0
–
–
98.2
–
–
1
18.0
–
–
146.0
–
–
178.0
148.0
111.0
58.2
0.724
0.713
0.675
0.612
0.627
0.629
0.547
0.421
0.235
0.053
0.409
0.509
0.585
0.637
0.672
0.707
0.730
0.752
0.761
0.779
0.779
–
–
87.7
–
–
1
13.0
–
–
141.0
–
–
166.0
171.0
138.0
102.0
65.9
10.000
11.300
13.600
16.800
19.900
22.300
24.000
23.800
19.900
15.600
12.900
11.200
9.830
49.1
0.9
–
–
48.3
–
–
99.4
–
–
155.0
165.0
128.0
94.1
23.1
0.0132
–
–
130.0
124.0
80.6
0.0135
56.7
0.00994
0.00810
0.00680
0.00636
0.00546
0.00476
0.00445
0.00421
0.00454
0.00531
27.0
29.8
1.1
49.7
1.3
–
–
19.7
–
–
42.4
–
–
65.7
–
–
82.1
–
–
97.7
–
–
1
13.0
–
–
126.0
–
–
145.0
21.3
–
–
27.1
–
–
53.0
–
–
81.6
–
–
1
10.0
–
–
139.0
–
–
167.0
165.0
58.3
— 4 . 3
8.600
25.7
–
–
28.9
–
–
53.8
–
–
77.2
–
–
102.0
–
–
125.0
–
–
150.0
7.770
— 7 . 2
7.020
–
–
39.8
–
–
71.8
–
–
104.0
–
–
135.0
6.380
5.900
5.460
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
11
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
53
53
Ideal
Ideal
52
51
52
51
P3dB = 47.45 dBm (55.6 W)
P1dB = 46.66 dBm (46.3 W)
P3dB = 47.11 dBm (51.5 W)
P1dB = 46.13 dBm (41.0 W)
50
49
50
49
48
47
46
48
47
46
Actual
Actual
45
44
43
45
44
43
V
= 28 Vdc, I
= 130 mA, I
= 230 mA
V
= 28 Vdc, I
= 130 mA, I
= 230 mA
DQ2
DD
DQ1
DQ2
DD
DQ1
Pulsed CW, 10
μ
sec(on), 10% Duty Cycle
f = 3400 MHz
Pulsed CW, 10
μ
sec(on), 10% Duty Cycle
f = 3600 MHz
16 17 18 19 20 21 22 23 24 25 26 27 28
18 19
20 21 22 23 24 25 26 27 28 29 30
P ,
INPUT POWER (dBm)
in
P ,
INPUT POWER (dBm)
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Test Impedances per Compression Level
Z
Z
load
Z
Z
load
source
source
Ω
Ω
Ω
Ω
P1dB
52.4
–
–
j
42.5
P1dB
126.6
–
–
j
41.9
3.5
–
–
j
8.5
3.3
–
–
j
8.3
Figure 17. Pulsed CW Output Power
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V @ 3400 MHz
versus Input Power @ 28 V @ 3600 MHz
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
12
PACKAGE DIMENSIONS
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13
RF Device Data
Freescale Semiconductor
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RF Device Data
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RF Device Data
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RF Device Data
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RF Device Data
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RF Device Data
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RF Device Data
Freescale Semiconductor
21
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
•
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
Electromigration MTTF Calculator
RF High Power Model
T
o
ols tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Nov. 2008
Nov. 2010
•
•
Initial Release of Data Sheet
Corrected data sheet to remove “DC Block” from On
–
–
chip Matching feature bullet and replaced with
“RF Choke to Ground”, p. 1
•
•
•
Modified data sheet to reflect RF
T
e
st Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 3
Added “RF Input Choke to Ground” circuitry to Functional Block Diagram and
T
e
st Circuit Schematic,
p. 1, 5
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 22
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
22
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Document Number: MW7IC3825N
Rev. 1, 11/2010
