NXP-Semicon-MW7IC930NBR1
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Download  | NXP-Semicon-MW7IC930NBR1 |
Document Number: MW7IC930N
Rev. 1, 10/2010
Freescale Semiconductor
T
e
chnical Data
RF LDMOS Wideband Integrated
Power Amplifiers
MW7IC930NR1
MW7IC930GNR1
MW7IC930NBR1
The MW7IC930N wideband integrated circuit is designed with on
–
–
chip
matching that makes it usable from 728 to 960 MHz. This multi
–
–
stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation.
Driver Application — 900 MHz
•
Typical Single
–
–
Carrier W
–
–
CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
728
–
-768 MHz, 920
–
-960 MHz,
3.2 W AVG., 28 V
SINGLE W
–
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
106 mA, I
DQ2
= 285 mA, P
out
= 3.2 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCD
F
.
G
(dB)
PAE
(%)
ACPR
(dBc)
ps
(1)
Frequency
920 MHz
940 MHz
960 MHz
36.6
36.8
36.6
16.1
16.7
17.3
–
–
48.0
–
–
48.7
–
–
48.6
CASE 1886
–
-01
TO
–
-270 WB
–
-16
PLASTIC
•
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
Stable into a 5:1 VSWR. All Spurs Below
–
–
60 dBc @ 1 mW to 30 Watts
CW P
out
MW7IC930NR1
)
.
CASE 1887
–
-01
TO
–
-270 WB
–
-16 GULL
PLASTIC
Typical P
out
@ 1 dB Compression Point
≃
31 Watts CW, I
DQ1
= 40 mA,
I
DQ2
= 340 mA
MW7IC930GNR1
Driver Application — 700 MHz
•
Typical Single
–
–
Carrier W
–
–
CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
106 mA, I
DQ2
= 285 mA, P
out
= 3.2 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCD
F
.
CASE 1329
–
-09
TO
–
-272 WB
–
-16
PLASTIC
G
(dB)
PAE
(%)
ACPR
(dBc)
ps
Frequency
728 MHz
748 MHz
768 MHz
36.4
36.4
36.4
16.1
16.1
16.0
–
–
47.7
–
–
47.8
–
–
47.9
MW7IC930NBR1
Features
•
•
•
•
•
•
•
Characterized with Series Equivalent Large
–
–
Signal Impedance Parameters and Common Source S
–
–
Parameters
On
–
–
Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current
T
e
mperature Compensation with Enable/ Disable Function
(2)
Integrated ESD Protection
225
°
C Capable Plastic Package
GND
NC
1
2
3
4
5
16
15
GND
NC
RoHS Compliant
In
T
a
pe and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
NC
V
DS1
GND
RF
6
14
V
RF /V
out DS2
in
DS1
7
8
GND
V
RF
GS1
GS2
NC
RF /V
out DS2
in
V
9
10
11
13
12
NC
GND
GND
V
V
GS1
GS2
Quiescent Current
Temperature Compensation
(
T
o
p View)
(2)
Note: Exposed
backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. 900
MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7.
2. Refer
to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf. Select Documentation/Application Notes
–
–
A
N1977 or AN1987.
©
Freescale Semiconductor, Inc., 2009
–
–
2010. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
–
–
0.5, +65
–
–
6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°
C
Drain
–
–
Source Voltage
Gate
–
–
Source Voltage
Operating Voltage
V
DSS
V
GS
DD
V
Storage
T
e
mperature Range
Case Operating
T
e
mperature
Operating Junction
T
e
mperature
Input Power
T
stg
–
–
65 to +150
150
T
C
°
C
(1,2)
T
225
°
C
J
P
20
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°
C/W
JC
(Case
T
e
mperature 80
°
C, 3.2 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 106 mA
= 285 mA
5.5
1.6
DQ1
DQ2
(Case
T
e
mperature 80
°
C, 30 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 40 mA
= 340 mA
5.8
1.2
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22
–
–
A
1
14)
Class
1B (Minimum)
A (Minimum)
II (Minimum)
Machine Model (per EIA/JESD22
–
–
A
1
15)
Charge Device Model (per JESD22
–
–
C101)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22
–
–
A
1
13, IPC/JEDEC J
–
–
STD
–
–
020
3
260
°
C
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
(V =
1.5 Vdc, V
= 0 Vdc)
I
1
GS
DS
Stage 1 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
2
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V =
10 Vdc, I
= 14
μ
Adc)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 106 mA)
2.8
9.4
DS
DQ1
(4)
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 106 mA, Measured in Functional
T
e
st)
V
6.9
11.9
DD
DQ1
1. Continuous
use at maximum temperature will affect MTT
F
.
2. MTTF
calculator available at http://www.freescale.com/rf. Select Software &
T
o
ols/Development
T
o
ols/Calculators to access MTTF
calculators by product.
3. Refer
to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
–
–
A
N1955.
4. V
= 3.3 x V
. Parameter measured on Freescale
T
e
st Fixture, due to resistive divider network on the board. Refer to
T
e
st Circuit
GG
GS(Q)
schematic.
(continued)
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
A
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
I
—
—
—
—
—
—
10
1
μ
Adc
μ
Adc
μ
Adc
DSS
DSS
GSS
(V =
65 Vdc, V
= 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V =
28 Vdc, V
= 0 Vdc)
DS
GS
Gate
–
–
Source Leakage Current
(V =
1.5 Vdc, V
= 0 Vdc)
I
1
GS
DS
Stage 2 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
2
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V =
10 Vdc, I
= 74
μ
Adc)
DS
D
Gate Quiescent Voltage
(V =
28 Vdc, I
= 285 mA)
2.6
5.9
0.3
DS
DQ2
(1)
Fixture Gate Quiescent Voltage
(V =
28 Vdc, I
= 285 mA, Measured in Functional
T
e
st)
V
4.2
0.1
7.6
0.8
DD
DQ2
Drain
–
–
Source On
–
–
V
oltage
V
(V =
10 Vdc, I
= 740 mA)
GS
D
(2,3)
Functional Tests
(In Freescale
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 106 mA, I
= 285 mA, P
= 3.2 W Avg.,
DQ2 out
DD
DQ1
f = 940 MHz, Single
–
–
Carrier W
–
–
CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCD
F
.
A
CPR measured in 3.84 MHz Channel Bandwidth @
±
5 MHz Offset.
Power Gain
G
33
14
—
—
35.9
16.5
38
—
dB
%
ps
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
PAE
ACPR
IRL
–
–
49.5
–
–
18.7
— 4 6
— 9
dBc
dB
Typical Broadband Performance — 900 MHz
(In Freescale 900 MHz Application
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
=
DQ1
DD
106 mA, I
= 285 mA, P
= 3.2 W Avg., Single
–
–
Carrier W
–
–
CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability
DQ2
out
on CCD
F
.
A
CPR measured in 3.84 MHz Channel Bandwidth @
±
5 MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
G
(dB)
PAE (%)
16.1
ACPR (dBc)
–
–
48.0
IRL (dB)
–
–
19.9
ps
36.6
36.8
36.6
16.7
–
–
48.7
–
–
20.8
17.3
–
–
48.6
–
–
19.7
1. V
= 2.25 x V
. Parameter measured on Freescale
T
e
st Fixture, due to resistive divider network on the board. Refer to
T
e
st Circuit
GS(Q)
GG
schematic.
2. Part
internally matched both on input and output.
3. Measurement
made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T =
25
°
C unless otherwise noted)
(continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance — 900 MHz
(In Freescale 900 MHz Application
T
e
st Fixture, 50 ohm system) V
= 28 Vdc, I
= 106 mA, I
=
DQ2
DD
DQ1
285 mA, 920
–
–
960 MHz Bandwidth
V
= 28 Vdc, I
= 40 mA, I
= 340 mA
DQ2
P1dB
—
—
31
45
—
—
W
DD
P
DQ1
@ 1 dB Compression Point, CW
out
IMD Symmetry @ 25 W PE
P
, P
w
here IMD Third Order
IMD
MHz
out
sym
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
—
80
—
—
MHz
%
res
(1)
Quiescent Current Accuracy over
T
e
mperature
∆
I
0.02
QT
with 3 k
Ω
Gate Feed Resistors (
–
–
30 to 85
°
C)
Gain Flatness in 40 MHz Bandwidth @ P
= 3.2 W Avg.
G
—
—
0.2
—
—
dB
out
F
Gain Variation over
T
e
mperature
∆
G
0.036
dB/
°
C
(
–
–
30
°
C to +85
°
C)
Output Power Variation over
T
e
mperature
∆
P1dB
—
0.01
—
dBm/
°
C
(
–
–
30
°
C to +85
°
C)
Typical W
–
-CDMA Broadband Performance — 700 MHz
(In Freescale 700 MHz Application
T
e
st Fixture, 50 ohm system) V
= 28 Vdc,
DD
I
= 106 mA, I
= 285 mA, P
= 3.2 W Avg., Single
–
–
Carrier W
–
–
CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
DQ2 out
DQ1
Probability on CCD
F
.
A
CPR measured in 3.84 MHz Channel Bandwidth @
±
5 MHz Offset.
Frequency
728 MHz
748 MHz
768 MHz
G
(dB)
PAE (%)
16.1
ACPR (dBc)
–
–
47.7
IRL (dB)
–
–
17.9
ps
36.4
36.4
36.4
16.1
–
–
47.8
–
–
20.7
16.0
–
–
47.9
–
–
21.8
1. Refer
to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf. Select Documentation/Application Notes
–
–
A
N1977 or
AN1987.
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
4
V
DD1
C14 C15
C13
R7
V
DD2
C16
C17
C9
C8 C7
C11
C18
C12
C6
C5 C4
C10
R4
R6
C2
R5
C1
V
V
GG1
C3
MW7IC930N
Rev 2
GG2
R3
R2
R1
Figure 3. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 900 MHz
Table 6. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
ATC600F470JT250XT
C0603C103J5RAC
–
–
TU
GRM21BR71H105KA12L
GRM55DR61H106KA88L
ATC100B160JT500XT
ATC100B6R2BT500XT
ATC100B7R5CT500XT
ATC100B470JT500XT
MCGPR35V337M10X16
–
–
RH
ATC100B0R5BT500XT
CRCW12061K00FKEA
CRCW12060000Z0EA
RF
–
–
35
Manufacturer
C1, C4, C7
C2, C5, C8
C3, C6
C9, C15
C10
47 pF Chip Capacitors
ATC
10 n
F
,
5
0 V Chip Capacitors
1
μ
F
,
5
0 V Chip Capacitors
10
μ
F
,
5
0 V Chip Capacitors
16 pF Chip Capacitor
Kemet
Murata
Murata
ATC
C11
6.2 pF Chip Capacitor
ATC
C12
7.5 pF Chip Capacitor
ATC
C13, C14
C16, C17
C18
47 pF Chip Capacitors
ATC
100
μ
F
,
5
0 V Electrolytic Capacitors
0.5 pF Chip Capacitor
Multicomp
ATC
R1, R2, R3, R4, R5, R6
1000
Ω
, 1/4 W Chip Resistors
0
Ω
, 3A Chip Resistor
Vishay
Vishay
T
a
conic
R7
PCB
0.020
″
,
ε
= 3.5
r
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 900 MHz
38.5
20
V
= 28 Vdc, P
= 3.2 W (Avg.), I
= 285 mA, Single
–
–
Carrier W
–
–
CDMA
= 106 mA
DD
out
DQ1
38
37.5
37
18
I
DQ2
PAE
16
14
G
ps
36.5
12
— 4 0
— 4 2
— 4 4
— 4 6
— 4 8
— 5 0
36
35.5
35
0.5
0
— 1 8
— 2 0
— 2 2
— 2 4
— 2 6
— 2 8
PARC
— 0 . 5
— 1
IRL
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
34.5
ACPR
— 1 . 5
— 2
34
33.5
800
825
850
875
900
925
950
975 1000
f, FREQUENCY (MHz)
Figure 4. Output Peak
–
-to
–
-Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 3.2 Watts Avg.
—
1
0
V
= 28 Vdc, P
= 25 W (PEP), I
= 106 mA
DD
out
DQ1
I
= 285 mA, Two
–
–
T
one Measurements
DQ2
—
2
0
—
3
0
—
4
0
—
5
0
— 6 0
(f1 + f2)/2 = Center Frequency of 940 MHz
IM3
–
–
U
IM3
–
–
L
IM5
–
–
U
IM5
–
–
L
IM7
–
–
L
IM7
–
–
U
1
10
100
TWO
–
–
TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two
–
-Tone Spacing
— 2 6
37.5
37
1
0
46
G
ps
40
— 3 0
— 3 4
— 3 8
— 4 2
— 4 6
— 5 0
–
–
1 dB = 6.41 W
PARC
36.5
36
— 1
— 2
34
28
22
16
10
V
= 28 Vdc
= 106 mA
= 285 mA
DD
DQ1
DQ2
–
–
2 dB = 8.98 W
–
–
3 dB = 12.17 W
I
I
f = 940 MHz
35.5
35
— 3
— 4
Single
–
–
Carrier W
–
–
CDMA
PAE
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
ACPR
34.5
— 5
2
5
8
11
14
P
, OUTPUT POWER (WATTS)
out
Figure 6. Output Peak
–
-to
–
-Average Ratio
Compression (PARC) versus Output Power
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS — 900 MHz
38
60
54
48
42
36
30
24
18
12
6
0
960 MHz
G
960 MHz
37.5
37
ps
— 5
940 MHz
920 MHz
940 MHz
— 1 0
— 1 5
— 2 0
— 2 5
— 3 0
920 MHz
= 285 mA
36.5
36
V
= 28 Vdc
DD
DQ1
960 MHz
I
= 106 mA, I
DQ2
Single
–
–
Carrier W
–
–
CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
35.5
920 MHz
35
34.5
34
Probability on CCDF
— 3 5
PAE
— 4 0
— 4 5
— 5 0
33.5
33
ACPR
0
1
10
, OUTPUT POWER (WATTS) AVG.
50
P
out
Figure 7. Single
–
-Carrier W
–
-CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
40
0
Gain
— 5
35
30
25
— 1 0
— 1 5
V
P
= 28 Vdc
=
–
–
10 dBm
= 106 mA
= 285 mA
— 2 0
–
–
25
— 3 0
20
DD
IRL
950
in
I
I
DQ1
DQ2
15
10
450
550
650
750
850
1050 1150 1250
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W
–
-CDMA TEST SIGNAL
100
10
10
0
— 1 0
— 2 0
— 3 0
— 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
— 5 0
— 6 0
W
–
–
CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
±
5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
–
–
ACPR in 3.84 MHz
Integrated BW
0.001
— 7 0
— 8 0
0.0001
0
1
2
3
4
5
6
7
8
9
10
— 9 0
PEAK
–
–
TO
–
–
A
VERAGE (dB)
–
–
100
Figure 9. CCDF W
–
-CDMA IQ Magnitude
Clipping, Single
–
-Carrier Test Signal
— 9
— 7 . 2
— 5 . 4
— 3 . 6
— 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 10. Single
–
-Carrier W
–
-CDMA Spectrum
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
7
V
= 28 Vdc, I
= 106 mA, I
= 285 mA, P
= 3.2 W Avg.
DQ2 out
DD
DQ1
f
Z
in
Z
load
MHz
820
840
860
880
900
920
940
960
980
=
Ω
Ω
37.95 + j2.31
39.95 + j2.72
42.70 + j1.02
44.40
–
–
j
1.38
46.25
–
–
j
4.92
45.70
–
–
j
8.41
45.46
–
–
j
11.47
45.07
–
–
j
15.19
43.49
–
–
j
18.03
4.70 + j0.98
4.29 + j1.23
3.93 + j1.67
3.63 + j2.15
3.41 + j2.61
3.14 + j3.05
2.94 + j3.48
2.85 + j3.90
2.69 + j4.32
Z
in
Device input impedance as measured from
gate to ground.
Z
load
=
T
e
st circuit impedance as measured from
drain to ground.
Output
Device
Matching
Network
Under Test
Z
Z
in
load
Figure 11. Series Equivalent Input and Load Impedance — 900 MHz
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
8
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — 900 MHz
V
= 28 Vdc, I
= 106 mA, I
= 285 mA, Pulsed CW,
DD
DQ1
DQ2
10
μ
sec(on), 10% Duty Cycle
51
50
49
48
47
46
45
44
43
42
41
Ideal
f = 960 MHz
f = 920 MHz
Actual
f = 920 MHz
f = 960 MHz
f = 940 MHz
f = 940 MHz
9
10
11
12
13
14
15
16
17
18
19
P ,
INPUT POWER (dBm)
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
Watts
P3dB
Watts
f
dBm
46.3
46.3
46.3
dBm
47.1
47
(MHz)
920
940
960
43
42
42
51
50
50
47
Test Impedances per Compression Level
f
Z
Z
load
source
(MHz)
Ω
Ω
920
940
960
P1dB 55.82
+ j15.71
P1dB 52.56
+ j20.20
P1dB 49.18
+ j25.00
4.54 + j1.15
4.38 + j1.21
5.04 + j1.15
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
9
V
DD1
C14 C15
C13
R7
V
DD2
C16
C17
C9
C7
C8
C10
C11
C6
C5C4
C18
C12
R6
R3
C2
R4
C1
R5
V
V
GG1
C3
MW7IC930N
Rev 2
GG2
R1
R2
Figure 13. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 700 MHz
Table 7. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 700 MHz
Part
Description
47 pF Chip Capacitors
Part Number
ATC600F470JT250XT
C0603C103J5RAC
Manufacturer
ATC
C1, C4, C7
C2, C5, C8
C3, C6
C9, C15
C10
10 n
F
,
5
0 V Chip Capacitors
1
μ
F
,
5
0 V Chip Capacitors
10
μ
F
,
5
0 V Chip Capacitors
13 pF Chip Capacitor
Kemet
Murata
Murata
ATC
GRM21BR71H105KA12L
GRM55DR61H106KA88L
ATC100B130JT500XT
ATC100B7R5CT500XT
ATC100B6R8CT500XT
ATC100B470JT500XT
MCGPR35V337M10X16
–
–
RH
ATC100B1R8BT500XT
CRCW12061K00FKEA
CRCW12060000Z0EA
RF
–
–
35
C11
7.5 pF Chip Capacitor
ATC
C12
6.8 pF Chip Capacitor
ATC
C13, C14
C16, C17
C18
47 pF Chip Capacitors
ATC
100
μ
F
,
5
0 V Electrolytic Capacitors
1.8 pF Chip Capacitor
Multicomp
ATC
R1, R2, R3, R4, R5, R6
1000
Ω
, 1/4 W Chip Resistors
0
Ω
, 3A Chip Resistor
Vishay
Vishay
T
a
conic
R7
PCB
0.020
″
,
ε
= 3.5
r
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
10
TYPICAL CHARACTERISTICS — 700 MHz
60
37.5
37
0
768 MHz
748 MHz
— 5
54
48
42
G
ps
36.5
36
— 1 0
— 1 5
— 2 0
— 2 5
— 3 0
728 MHz
V
= 28 Vdc
= 106 mA, I
DD
DQ1
I
= 285 mA
DQ2
35.5
35
36
30
24
18
12
Single
–
–
Carrier W
–
–
CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
34.5
34
Probability on CCDF
748 MHz
728 MHz
— 3 5
728 MHz
PAE
33.5
33
— 4 0
— 4 5
— 5 0
768 MHz
6
0
ACPR
748 MHz
10
, OUTPUT POWER (WATTS) AVG.
32.5
1
50
P
out
Figure 14. Single
–
-Carrier W
–
-CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power — 700 MHz
V
= 28 Vdc, I
= 106 mA, I
= 285 mA, P
= 3.2 W Avg.
DQ2 out
DD
DQ1
f
Z
in
Z
load
MHz
710
720
730
740
750
760
770
780
790
=
Ω
Ω
25.21
–
–
j
1.21
33.76 + j5.36
38.78 + j1.40
40.14
–
–
j
0.76
35.46
–
–
j
1.15
34.65
–
–
j
0.53
34.75
–
–
j
0.43
36.20 + j0.81
36.18 + j1.33
8.57 + j2.52
8.52 + j2.46
8.44 + j2.34
8.36 + j2.16
8.30 + j2.00
8.32 + j1.90
8.31 + j1.86
8.27 + j1.98
8.23 + j2.12
Z
in
Device input impedance as measured from
gate to ground.
Z
load
=
T
e
st circuit impedance as measured from
drain to ground.
Output
Device
Matching
Network
Under Test
Z
Z
in
load
Figure 15. Series Equivalent Input and Load Impedance — 700 MHz
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
12
RF Device Data
Freescale Semiconductor
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
13
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
14
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
15
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
16
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
17
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
18
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
19
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
20
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
•
•
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over
–
–
Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
T
o
ols tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Aug. 2009
Oct. 2010
•
•
Initial Release of Data Sheet
T
a
ble 1, Maximum Ratings, increased Input Power from 4.7 dBm to 20 dBm to reflect the true capability of
the device, p. 2
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
21
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ꢀ
Freescale Semiconductor, Inc. 2009
–
–
2010. All rights reserved.
Document Number: MW7IC930N
R
ev. 1, 10/2010
