NXP-Semicon-NCR100W-10M115
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NCR100W-10M
SCR
27 June 2016
Product data sheet
1. General
description
Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This
SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low
power gate trigger circuits.
2. Features
and benefits
•
Sensitive gate
•
•
•
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
Surface mountable package
3. Applications
•
•
•
•
Ground Fault Circuit Interrupters (GFCI)
General purpose switching and phase control
Ignition circuits, CDI for 2- and 3-wheelers
Motor control – e.g. small kitchen appliances
4. Quick
reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
DRM
repetitive peak off-
state voltage
–
–
850
V
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
repetitive peak reverse
voltage
–
–
–
–
–
–
–
–
850
0.8
1.1
11
V
A
A
A
average on-state
current
half sine wave; T
sp
≤ 98
°C
RMS on-state current
non-repetitive peak on-
half sine wave; T
j(init)
= 25 °C;
state current
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
1
–
100
µA
WeEn Semiconductors
NCR100W-10M
SCR
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
K
A
G
A
cathode
4
A
K
G
sym037
2
anode
3
gate
1
2
3
4
mb; connected to anode
SC-73 (SOT223)
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
NCR100W-10M
SC-73
plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4. Marking codes
Type number
Marking code
NCR100W-10M
10010M
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NCR100W-10M
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Product data sheet
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NCR100W-10M
SCR
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state
voltage
–
850
V
V
RRM
repetitive peak reverse
voltage
–
850
V
I
T(AV)
average on-state current
half sine wave; T
sp
≤ 98
°C
–
–
0.8
1.1
A
A
I
T(RMS)
RMS on-state current
I
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
–
11
A
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
t
p
= 10 ms; SIN
–
–
–
12.1
A
I
2
t
I
2
t for fusing
0.605 A²s
dI
T
/dt
rate of rise of on-state
current
I
G
= 0.2 mA
50
A/µs
I
GM
peak gate current
–
–
1
5
A
V
V
RGM
peak reverse gate
voltage
P
GM
P
G(AV)
T
stg
T
j
peak gate power
–
2
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
–
0.1
150
125
-40
–
aaa-015818
aaa-015819
1.2
3
98°C
I
T(RMS)
(A)
I
T(RMS)
(A)
0.8
0.4
0
2
1
0
-2
-1
-50
0
50
100
150
(°C)
10
10
1
10
surge duration (s)
T
sp
f = 50 Hz; T
sp
= 98 °C
Fig. 1. RMS on-state current as a function of solder
point temperature; maximum values
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
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NCR100W-10M
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Product data sheet
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NCR100W-10M
SCR
aaa-015821
1.2
95
a = 1.57
T
sp(max)
P
tot
(W)
(
°C)
1.9
2.2
105
0.8
2.8
4
conduction form
angle
(degrees)
factor
a
115
125
0.4
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
0
0
0.2
0.4
0.6
0.8
I
(A)
T(AV)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
aaa-015822
12
I
TSM
(A)
I
T
I
TSM
10
t
t
p
8
T
= 25 °C max
j(init)
6
4
2
0
2
3
1
10
10
10
number of cycles (n)
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
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NCR100W-10M
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
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NCR100W-10M
SCR
aaa-015823
3
10
I
I
T
TSM
I
TSM
(A)
t
= 25 °C max
t
p
2
10
T
j(init)
10
1
-5
10
-4
-3
10
-2
10
10
t
p
(s)
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
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NCR100W-10M
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Product data sheet
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NCR100W-10M
SCR
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-sp)
thermal resistance
from junction to solder
point
–
–
25
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
printed circuit board mounted; minimum
footprint; in free air
–
130
–
K/W
aaa-015824
2
10
Z
th(j-sp)
(K/W)
10
1
P
-1
10
t
t
p
-2
10
-5
-4
-3
-2
-1
10
10
10
10
10
1
10
t
p
(s)
Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width
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NCR100W-10M
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NCR100W-10M
SCR
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
I
GT
gate trigger current
Parameter
Conditions
Min
Typ
Max
Unit
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
1
–
–
–
–
100
6
µA
I
L
latching current
holding current
V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
mA
mA
I
H
V
D
= 12 V; T
j
= 25 °C; R
GK(ext)
= 1 kΩ;
–
3
V
T
on-state voltage
–
–
1.25
0.5
1.7
0.8
V
V
V
GT
gate trigger voltage
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
V
D
= 850 V; I
T
= 10 mA; T
j
= 125 °C;
0.3
0.5
–
V
I
D
I
R
off-state current
reverse current
V
D
= 850 V; R
GK(ext)
= 1 kΩ; T
j
= 125 °C
V
R
= 850 V; T
j
= 125 °C; R
GK(ext)
= 1 kΩ
–
–
0.05
0.05
1
1
mA
mA
Dynamic charateristics
dV
D
/dt
rate of rise of off-state
V
DM
= 569 V; T
j
= 125 °C; R
GK
= 1 kΩ;
100
–
–
V/µs
voltage
(V
DM
= 67% of V
DRM
); exponential
waveform
t
gt
t
q
gate-controlled turn-on
I
TM
= 2 A; V
D
= 850 V; I
G
= 10 mA; dI
G
/
–
–
2
–
–
µs
µs
time
dt = 0.1 A/µs; T
j
= 25 °C
commutated turn-off
time
V
DM
= 569 V; T
j
= 125 °C; I
TM
= 1.6 A;
V
R
= 35 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
100
dt = 2 V/µs; R
GK(ext)
= 1 kΩ; (V
DM
=
67% of V
DRM
)
001aab502
001aab503
3
3
I
I
L
GT
I
I
L(25°C)
GT(25°C)
2
2
1
0
1
0
-50
-50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
R
GK
= 1 kΩ
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Fig. 8. Normalized latching current as a function of
junction temperature
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NCR100W-10M
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
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NCR100W-10M
SCR
aaa-015825
001aab504
3
5
4
3
2
1
0
I
T
(A)
I
H
I
H(25°C)
2
(3)
(1)
(2)
1
0
-50
0
50
100
150
0
1
2
3
V
(V)
T (°C)
T
j
R
GK
= 1 kΩ
V
o
= 1.173 V; R
s
= 0.216 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 9. Normalized holding current as a function of
junction temperature
Fig. 10. On-state current as a function of on-state
voltage
001aab501
1.6
V
GT
V
GT(25°C)
1.2
0.8
0.4
-50
0
50
100
150
T (°C)
j
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
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NCR100W-10M
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Product data sheet
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NCR100W-10M
SCR
11. Package
outline
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
E
B
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
p
b
c
D
E
e
e
H
L
p
Q
v
w
y
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-10
06-03-16
SOT223
SC-73
Fig. 12. Package outline SC-73 (SOT223)
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NCR100W-10M
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NCR100W-10M
SCR
12. Package
outline (minimized)
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig. 13. Package outline SC-73 (SOT223)
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 14. Reflow soldering footprint for SC-73 (SOT223)
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NCR100W-10M
SCR
8.9
6.7
1.9
solder lands
solder resist
occupied area
4
6.2
8.7
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 15. Wave soldering footprint for SC-73 (SOT223)
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NCR100W-10M
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Right to make changes
— WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
14. Legal
information
Suitability for use
— WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Data sheet status
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Definitions
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Disclaimers
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
no responsibility for the content in this document if provided by an information
source outside of WeEn Semiconductors.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation –
lost profits, lost savings, business interruption, costs related to the removal
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damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the
Terms and conditions of commercial sale
of WeEn
Semiconductors.
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Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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15. Contents
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For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 27 June 2016
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