NXP-Semicon-PBHV9560Z115
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PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
12 August 2014
Product data sheet
1. General
description
PNP high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8560Z
2. Features
and benefits
High voltage
•
•
•
•
•
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
High collector current gain h
FE
at high I
C
AEC-Q101 qualified
3. Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
•
•
•
•
•
•
•
HID front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
V
CEO
collector-emitter
voltage
open base
–
–
-600
V
I
C
collector current
DC current gain
–
–
-0.5
–
A
h
FE
V
CE
= -10 V; I
C
= -50 mA; T
amb
= 25 °C
70
130
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
5. Pinning
information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
4
2, 4
1
2
3
4
B
C
E
C
base
collector
emitter
collector
1
1
2
3
3
SC-73 (SOT223)
sym028
6. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBHV9560Z
SC-73
plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4.
Marking codes
Type number
Marking code
PBHV9560Z
HV956Z
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
2 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
8. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
CESM
V
EBO
I
C
Parameter
Conditions
open emitter
open base
Min
Max
-600
-600
-600
-6
Unit
V
collector-base voltage
collector-emitter voltage
collector-emitter peak voltage
emitter-base voltage
collector current
–
–
V
V
BE
= 0 V
–
V
open collector
–
V
–
-0.5
0.65
1.4
A
P
tot
total power dissipation
T
amb
≤ 25 °C
–
W
W
°C
°C
°C
–
T
j
junction temperature
ambient temperature
storage temperature
–
150
150
150
T
amb
T
stg
-55
-65
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[2]
aaa-013702
1.6
(1)
P
tot
(W)
1.2
0.8
0.4
0
(2)
-60
20
100
180
T
(°C)
amb
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, standard footprint
Fig. 1.
Power derating curves
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
3 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
9. Thermal
characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
190
89
Unit
K/W
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
–
–
–
–
R
th(j-sp)
thermal resistance
from junction to solder
point
–
–
20
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
aaa-013426
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013427
2
10
duty cycle = 1
0.75
Z
0.5
th(j-a)
(K/W)
0.33
0.1
0.2
10
0.05
0.01
0.02
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
4 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
-100
-10
Unit
nA
I
CBO
collector-base cut-off
current
V
CB
= -400 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= -400 V; I
E
= 0 A; T
j
= 150 °C
–
–
–
–
–
–
µA
I
CES
I
EBO
h
FE
collector-emitter cut-off
V
CE
= -400 V; V
BE
= 0 V; T
amb
= 25 °C
current
-100
nA
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
–
–
-100
nA
DC current gain
V
CE
= -10 V; I
C
= -50 mA; T
amb
= 25 °C
70
50
130
90
–
–
V
CE
= -10 V; I
C
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
V
CEsat
collector-emitter
I
C
= -50 mA; I
B
= -5 mA; T
amb
= 25 °C
–
–
-150
-140
-250
-250
mV
mV
saturation voltage
I
C
= -100 mA; I
B
= -20 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
V
BEsat
base-emitter saturation
I
C
= -50 mA; I
B
= -5 mA; pulsed;
–
–
-900
mV
voltage
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
f
T
transition frequency
collector capacitance
V
CE
= -10 V; I
C
= -30 mA; f = 100 MHz
–
–
38
12
–
–
MHz
pF
C
c
V
CB
= -20 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
C
e
emitter capacitance
V
EB
= -0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
–
390
–
pF
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
5 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
aaa-013680
aaa-014036
300
200
h
FE
h
FE
(1)
(2)
150
200
100
50
0
100
(3)
(2)
(1)
(3)
0
-10
-1
2
3
-1
2
3
-1
-10
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I
(mA)
C
C
V
CE
= −10 V
h
FE
= f
(IC)
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
T
amb
= 25 °C
(1) V
CE
= -10 V
(2) V
CE
= -25 V
(3) V
CE
= -50 V
Fig. 4.
DC current gain as a function of collector
current; typical values
Fig. 5.
DC current gain as a function of collector
current; typical values
aaa-013681
aaa-013682
-0.5
-1.2
I
= -200 mA
-160 mA
-120 mA
B
I
C
-180 mA
-140 mA
(A)
V
BE
(V)
-0.4
-100 mA
-60 mA
(1)
(2)
(3)
-0.8
-0.3
-0.2
-0.1
0
-80 mA
-40 mA
-0.4
-20 mA
0
-10
-1
2
3
0
-1
-2
-3
-4
-5
-1
-10
-10
-10
V
(V)
I (mA)
C
CE
T
amb
= 25 °C
V
CE
= −5 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6.
Collector current as a function of collector-
emitter voltage; typical values
Fig. 7.
Base-emitter voltage as a function of collector
current; typical values
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
6 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
aaa-013683
aaa-013684
-1.2
-10
V
BEsat
(V)
V
CEsat
(V)
-1.0
-0.8
-0.6
-0.4
-0.2
(1)
(2)
(3)
-1
(1)
(2)
(3)
-1
-10
-10
-2
-1
2
3
-1
2
3
-10
-1
-10
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I (mA)
C
C
I
C
/I
B
= 10
I
C
/I
B
= 5
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8.
Base-emitter saturation voltage as a function of
Fig. 9.
Collector-emitter saturation voltage as a
collector current; typical values
function of collector current; typical values
aaa-013685
aaa-013686
4
-10
10
R
CEsat
(Ω)
V
CEsat
(V)
3
10
-1
(1)
2
(2)
10
(3)
10
(1)
(2)
-1
-10
(3)
1
-2
-1
-10
10
-1
2
3
-1
2
3
-10
-1
-10
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I (mA)
C
C
T
amb
= 25 °C
(1) I
C
/I
B
= 10.0
(2) I
C
/I
B
= 5.0
(3) I
C
/I
B
= 2.5
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 11.
Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
7 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
aaa-013687
4
10
R
CEsat
(Ω)
3
10
2
10
(1)
(2)
10
(3)
1
-1
10
-1
2
3
-10
-1
-10
-10
-10
I
(mA)
C
T
amb
= 25 °C
(1) I
C
/I
B
= 10.0
(2) I
C
/I
B
= 5.0
(3) I
C
/I
B
= 2.5
Fig. 12.
Collector-emitter saturation resistance as a function of collector current; typical values
11. Test
information
11.1 Quality
information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 – Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
8 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
12. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
E
B
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
p
b
c
D
E
e
e
H
L
p
Q
v
w
y
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-10
06-03-16
SOT223
SC-73
Fig. 13.
Package outline SC-73 (SOT223)
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
9 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 14.
Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 15.
Wave soldering footprint for SC-73 (SOT223)
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
10 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBHV9560Z v.1
20140812
Product data sheet
–
–
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
11 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation –
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data
sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Right to make changes
— Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Suitability for use in automotive applications
— This Nexperia
product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Product
[short] data
sheet
Production
This document contains the product
specification.
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
short data sheet, the full data sheet shall prevail.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale
— Nexperia
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
12 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
13 / 14
Nexperia
PBHV9560Z
600
V
,
0
.5 A PNP high-voltage low VCEsat (BISS) transistor
16. Contents
1
2
3
4
5
6
7
8
9
10
11
11.1
12
13
14
15
15.1
15.2
15.3
15.4
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
12 August 2014
©
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 August 2014
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