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October 2014
2N3904 / MMBT3904 / PZT3904
NPN General-Purpose Amplifier
Description
This device is designed as a general-purpose amplifier
and switch. The useful dynamic range extends to 100
mA as a switch and to 100 MHz as an amplifier.
PZT3904
2N3904
MMBT3904
C
C
E
E
C
TO-92
B
SOT-23
Mark:1A
SOT-223
B
EBC
Ordering Information
Part Number
2N3904BU
2N3904TA
2N3904TAR
2N3904TF
2N3904TFR
MMBT3904
PZT3904
Marking
2N3904
2N3904
2N3904
2N3904
2N3904
1A
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-223 4L
Packing Method
Bulk
Pack Quantity
10000
2000
Ammo
Ammo
2000
T
a
pe and Reel
T
a
pe and Reel
T
a
pe and Reel
T
a
pe and Reel
2000
2000
3000
3904
2500
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
Parameter
Value
40
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
V
6.0
V
I
C
Collector Current – Continuous
200
mA
°
C
T
J,
T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to 150
Notes:
1. These ratings are based on a maximum junction temperature of 150
°
C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Maximum
MMBT3904
(3)
PZT3904
(4)
Symbol
Parameter
T
o
tal Device Dissipation
Unit
2N3904
625
350
2.8
1,000
8.0
mW
mW/
°
C
°
C/W
P
D
Derate Above 25
°
C
5.0
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
357
125
°
C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm
2
.
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
2
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
40
60
V
V
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
6.0
V
I
BL
Base Cut-Off Current
V
CE
= 30
V
,
V
EB
= 3 V
V
CE
= 30
V
,
V
EB
= 3 V
50
50
nA
nA
I
CEX
Collector Cut-Off Current
ON CHARACTERISTICS
(5)
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
=100 mA, V
CE
= 1.0V
I
C
= 10 mA, I
B
= 1.0 mA
40
70
h
FE
DC Current Gain
100
60
300
30
0.2
0.3
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
C
= 50 mA, I
B
= 5.0 mA
0.65
300
0.85
0.95
I
SMALL SIGNAL CHARACTERISTICS
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
f
T
Current Gain – Bandwidth Product
MHz
pF
V
CB
= 5.0
V
,
I
E
= 0,
f = 100 kHz
C
obo
C
ibo
Output Capacitance
Input Capacitance
4.0
8.0
V
EB
= 0.5 V, I
C
= 0,
f = 100 kHz
pF
I
C
= 100
μ
A, V
CE
= 5.0
V
,
R
S
= 1.0 k
Ω
,
f = 10 Hz to 15.7 kHz
NF
Noise Figure
5.0
dB
SWITCHING CHARACTERISTICS
t
d
t
r
Delay Time
Rise Time
Storage Time
Fall Time
35
35
ns
ns
ns
ns
V
CC
= 3.0 V, V
BE
= 0.5 V
I
C
= 10 mA, I
B1
= 1.0 mA
t
s
t
f
200
50
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= I
B2
= 1.0 mA
Note:
5. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%.
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
3
Typical Performance Characteristics
5
0
0
V
C
E
=
5
V
0.15
0.1
β
= 10
4
0
0
125 °C
125 °C
3
0
0
25 °C
2
0
0
25 °C
0.05
– 40 °C
1
0
0
– 40 °C
0
0
.
1
1
10
1
0
0
0.1
1
10
100
I
C
– CO
L
L
ECTOR
C
U
R
R
E
N
T
(m
A
)
I
C
– COLLECTOR CURRENT
(mA)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
1
1
0.8
0.6
0.4
β
= 10
V
= 5V
CE
0.8
0.6
0.4
0.2
– 40 °C
– 40 °C
25 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I
C
– COLLECTOR CURRENT
(mA)
I
C
– COLLECTOR CURRENT
(mA)
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
10
500
f = 1.0 MHz
V
C
B
= 30V
100
5
4
10
1
C
ibo
3
2
0.1
C
obo
1
25
50
75
100
125
150
0.1
1
10
100
°
T
A
– AMBIENT TEMPER
A
T
URE ( C)
REVERSE BIAS VOLTAGE (V)
Figure 6. Capacitance vs. Reverse Bias Voltage
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
4
Typical Performance Characteristics
(Continued)
12
12
10
8
I
= 1.0 mA
C
R
V
CE
= 5.0V
I
= 1.0 mA
C
= 200
Ω
S
10
8
I
R
= 50
μ
A
= 1.0 k
Ω
I
= 5.0 mA
C
S
C
I
= 50
μ
A
C
I
= 0.5 mA
C
R
6
6
= 200
Ω
S
I
= 100
μ
A
4
4
C
2
2
I
= 100
μ
A, R
= 500
Ω
C
S
0
0
0.1
1
10
100
0.1
1
10
100
f –
FREQUENCY (kHz)
R
S
– SOURCE RESISTANCE (
)
k
Ω
Ω
Figure 7. Noise Figure vs. Frequency
Figure 8. Noise Figure vs. Source Resistance
1
50
0
45
40
35
30
25
20
15
10
5
20
40
60
80
100
120
140
160
180
h
fe
SOT-223
0.75
TO-92
0.5
θ
SOT-23
0.25
0
V
CE
= 40V
I
C
= 10 mA
0
1
10
100
1000
0
25
50
75
100
125
150
TEMPER
A
T
URE (
o
C)
f – FREQUENCY (MHz)
Figure 9. Current Gain and Phase Angle vs.
Frequency
Figure 10. Power Dissipation vs.
Ambient Temperature
500
500
100
I
10
I
c
c
I
B
1
= I
B2
=
V
CC
= 40V
I
B
1
= I
B2
=
10
40V
15V
100
T
= 25°C
J
t
@
V
CC
= 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@
V
CB
= 0V
d
1
10
– COLLECTOR CURRENT (mA)
100
1
10
– COLLECTOR CURRENT (mA)
100
I
C
I
C
Figure 12. Rise Time vs. Collector Current
Figure 11. Turn-On Time vs. Collector Current
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
5
Typical Performance Characteristics
(Continued)
500
500
100
I
10
I
c
c
I
B
1
= I
B2
=
I
B
1
= I
B2
=
10
T
= 25°C
J
T
= 125°C
V
CC
= 40V
J
100
T
= 125°C
J
T
= 25°C
J
10
5
10
5
1
10
– COLLECTOR CURRENT (mA)
100
1
10
– COLLECTOR CURRENT (mA)
100
I
I
C
C
Figure 13. Storage Time vs. Collector Current
Figure 14. Fall Time vs. Collector Current
100
500
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
f = 1.0 kHz
= 2
5
o
C
T
= 2
5
o
C
T
A
A
100
10
1
0.1
10
0.1
1
10
1
10
I
C
– COLLECTOR CURRENT (mA)
I
C
– COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
Figure 15. Current Gain
10
100
10
1
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
f = 1.0 kHz
T
= 25
o
C
7
T
= 2
5
o
C
A
A
5
4
3
2
1
0.1
0.1
1
10
0.1
1
10
I
C
– COLLECTOR CURRENT (mA)
I
C
– COLLECTOR CURRENT (mA)
Figure 18. Voltage Feedback Ratio
Figure 17. Input Impedance
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
6
Test Circuits
3.0 V
275
Ω
300 ns
10.6 V
Duty Cycle
=
2%
10 K
Ω
0
C
1
<
4.0 pF
– 0.5 V
<
1.0 ns
Figure 19. Delay and Rise Time Equivalent Test Circuit
3.0 V
t
1
10
<
t
1
<
500
μ
s
10.9 V
275
Ω
Duty Cycle
=
2%
10 K
Ω
0
C
1
<
4.0 pF
1N916
– 9.1 V
<
1.0 ns
Figure 20. Storage and Fall Time Equivalent Test Circuit
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
7
6.70
6.20
B
0.10
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
6.10
1.90
1
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
7.30
6.70
0.08
C
C
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING
BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
R0.15±0.05
R0.15±0.05
10°
5°
GAGE
PLANE
0.35
0.20
E) LANDPATTERN
NAME: SOT230P700X180-4BN
F) DRAWING
FILENAME: MKT-MA04AREV3
10°
0°
TYP
0.25
10°
5°
0.60 MIN
SEATING
PLANE
1.70
DETAIL A
SCALE: 2:1
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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