onsemi-2N4126

2N4126  

MMBT4126  

C

E

TO-92  

C

B

B

SOT-23  

Mark: ZF  

E

PNP General Purpose Amplifier  

This device is designed for general purpose amplifier and switch-  

ing applications at collector currents to 10

µ

A as a switch and to  

100 mA as an amplifier.  

Absolute Maximum Ratings*  

T

A

=

2

5°C unless otherwise noted  

Symbol  

Parameter  

Value  

Units  

V

CEO  

V

CBO  

V

EBO  

I

C  

Collector-Emitter Voltage  

25  

25  

V

V

Collector-Base Voltage  

Emitter-Base Voltage  

4.0  

V

Collector Current – Continuous  

Operating and Storage Junction Temperature Range  

200  

mA  

-55 to +150  

C

°

T

J

, T

stg  

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  

NOTES:  

1)

These ratings are based on a maximum junction temperature of 150 degrees C.  

2)

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  

3)

All voltages (V) and currents (A) are negative polarity for PNP transistors.  

Thermal Characteristics  

TA= 25°C unless otherwise noted  

Symbol  

Characteristic  

Max  

Units  

2N4126  

*MMBT4126  

P

D  

Total Device Dissipation  

Derate above 25 C  

625  

5.0  

350  

2.8  

mW  

m

W

/ C  

°

°

Thermal Resistance, Junction to Case  

83.3  

R

θ  

C/W  

°

JC  

Thermal Resistance, Junction to Ambient  

200  

357  

R

θ  

C/W  

°

JA  

*

Device mounted on FR-4 PCB 1.6″ X 1.6″ X 0.06.”  

2N4126/MMBT4126, Rev A  

2001 Fairchild Semiconductor

Corporation  

PNP General Purpose Amplifier  

(continued)  

Electrical Characteristics  

T

A

=

2

5°C unless otherwise noted  

Symbol  

Parameter  

Test Conditions  

Min  

Max  

Units  

OFF CHARACTERISTICS  

V

(BR)CEO  

V

(BR)CBO  

V

(BR)EBO  

I

CBO  

Collector-Emitter Breakdown Voltage  

I

C

= 1.0 mA, I

B

= 0  

I =

 

10 A,

 

I =

 

0  

25  

25  

V

V

Collector-Base Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Collector Cutoff Current  

µ

C

E

4.0  

V

I =

 

10 A,

 

I =

 

0  

µ

C

C

V

CB

= 20 V, I

E

= 0  

V

EB

= 3.0 V, I

C

= 0  

50  

50  

nA  

nA  

I

EBO  

Emitter Cutoff Current  

ON CHARACTERISTICS*  

h

FE  

DC Current Gain  

I

C

= 2.0 mA, V

CE

= 1.0 V  

I

C

= 50 mA, V

CE

= 1.0 V  

I

C

= 50 mA, I

B

= 5.0 mA  

120  

60  

360  

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

0.4  

V

V

V

CE(

sat

)  

V

BE(

sat

)  

I

C

= 50 mA, I

B

= 5.0 mA  

0.95  

SMALL SIGNAL CHARACTERISTICS  

f

T  

Current Gain – Bandwidth Product  

I

C

= 10 mA, V

CE

= 20 V,  

f = 100 MHz  

V

EB

= 0.5 V, I

C

= 0,  

f = 1.0 MHz  

V

CB

= 5.0 V, I

E

= 0,  

f = 100 kHz  

I

C

= 2.0 mA, V

CE

= 10 V,  

f = 1.0 kHz  

250  

120  

MHz  

pF  

Input Capacitance  

10  

4.5  

480  

4.0  

C

ibo  

C

cb  

h

fe  

Collector-Base Capcitance  

Small-Signal Current Gain  

Noise Figure  

pF  

NF  

dB  

I =

 

100 A,

 

V

CE

= 5.0 V,  

µ

C

R =1.0

 

k ,

 

f=10 Hz to 15.7 kHz  

Ω

S

*

Pulse

T

e

st: Pulse Width

≤

300

µ

s, Duty Cycle

≤

2.0%  

NOTE:

All voltages (V) and currents (A) are negative polarity for PNP transistors.  

PNP General Purpose Amplifier  

(continued)  

Typical Characteristics  

Co

l

l

ector-Emit

t

e

r S

a

t

uration  

Voltage vs Collec

t

o

r C

u

r

r

e

n

t  

T

y

p

i

cal Pulsed Current Gain  

vs C

o

l

lector Current  

0

.

3  

0

.

2

5  

0

.

2  

2

5

0  

V

=

1

.

0

V  

β

= 10  

CE  

125 °C  

2

0

0  

1

5

0  

1

0

0  

50  

0

.

1

5  

0

.

1  

25

°

C  

25 °C  

12

5

°

C  

– 40 °C  

0

.

0

5  

0

– 40

°

C  

1

10  

1

0

0

2

0

0  

0

.

1

0

.

2  

0

.

5  

1

2

5

10 20  

50

1

0

0  

I

C

– COLLECTOR C

U

R

R

E

N

T

 

(

m

A

)  

I

C

– C

O

LLE

C

T

OR C

U

R

R

E

N

T

 

(

m

A)  

Base-Emit

t

e

r S

a

t

u

r

ation  

Voltage vs Collec

t

o

r C

u

r

r

e

n

t  

Base Emitter ON Voltage vs  

Co

l

l

ec

t

o

r C

u

r

r

e

n

t  

1

0

.

8  

0

.

6  

0

.

4  

0

.

2  

0

β

= 10  

– 40

°

C  

1

0

.

8  

0

.

6  

0

.

4  

0

.

2  

0

– 40

°

C  

25

°

C  

125

°

C  

25

°

C  

125

°

C  

V

=

1

V  

CE  

1

10  

1

0

0  

2

0

0  

0

.

1  

1

10  

25  

I

C

– COLLECTOR C

U

R

R

E

N

T

 

(

m

A

)  

I

C

– COLLECTOR C

U

R

R

E

N

T

 

(

m

A

)  

Co

l

l

ec

t

o

r

-Cutoff

C

u

r

r

e

n

t  

vs Ambi

e

n

t Te

m

perature  

Common-Base Open Circuit  

Input and Output Capacitance  

vs Reverse Bias Voltage  

1

0

0  

10  

V

= 2

5

V  

CB  

10  

8

C

obo  

6

1

C

4

ibo  

0

.

1  

2

0

.

0

1  

0

0.1  

25  

50  

75  

1

0

0  

1

2

5  

1

10  

T

A

– A

M

B

I

E

 

N

T

T

EMP

 

E

R

A

T

U

R

E (

 

C

)  

°

REVERSE BIAS VOLTAGE (V)  

PNP General Purpose Amplifier  

(continued)  

Typical Characteristics

 

(continued)  

Noise Figure vs Frequency  

Noise Figure vs Source Resistance  

6

12  

V

CE

= 5.0V  

V

CE

= 5.0V  

f = 1.0 kHz  

5

4

10  

8

I

= 1.0 mA  

C

3

2

1

0

I

= 100

µ

A, R

 

=

2

00

Ω  

6

C

S

4

I

I

= 1.0 mA, R

 

= 200

Ω  

C

C

S

I

= 100

µ

A  

C

2

= 100

µ

A, R

 

= 2.0 k

Ω  

S

0

0.1  

1

10  

100  

0.1  

1

10  

100  

f –

 

FREQUENCY (kHz)  

R

– SOURCE RESISTANCE (  

)

k

Ω  

S

Switching Times  

vs Collector Current  

T

u

rn On and Turn Off Times  

vs Collector Current  

500  

100  

500  

100  

t

t

s

off  

I

c

t

I

B1  

=

t

on  

f

10  

t

on  

V

BE(OFF)

= 0.5V  

I

10  

1

10  

1

t

r

I

c

c

t

I

B1

=

I

B2  

=

I

B1

=

I

B2  

=

off  

10  

10  

t

d

1

10  

100  

1

10  

100  

I

– COLLECTOR CURRENT (mA)  

I

– COLLECTOR CURRENT (mA)  

C

Power Dissipation vs  

Ambient Temperature  

1

SOT-223  

0.75  

TO-92  

0.5  

SOT-23  

0.25  

0

0

25  

50  

75  

100  

125  

150  

TEMPER

A

T

URE (

o

C)  

PNP General Purpose Amplifier  

(continued)  

Typical Characteristics

 

(continued)  

Input Impedance  

Voltage Feedback Ratio  

10  

100  

V

= 10 V  

CE  

f = 1.0 kHz  

1

10  

0.1  

1

0.1  

0.1  

1

10  

1

10  

I

C

– COLLECTOR CURRENT (mA)  

I

C

– COLLECTOR CURRENT (mA)  

Output Admittance  

Current Gain  

1000  

500  

1000  

V

= 10 V  

V

= 10 V  

CE  

CE  

f = 1.0 kHz  

f = 1.0 kHz  

200  

100  

50  

100  

20  

10  

10  

0.1  

0.1  

1

10  

1

10  

I

C

– COLLECTOR CURRENT (mA)  

I

C

– COLLECTOR CURRENT (mA)  

TRADEMARKS  

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  

not intended to be an exhaustive list of all such trademarks.  

PowerTrench  

QFET™  

QS™  

SyncFET™  

TinyLogic™  

UHC™  

ACEx™  

FASTr™  

GlobalOptoisolator™  

GTO™  

Bottomless™  

CoolFET™  

CROSSVOLT

™  

DOME™  

QT Optoelectronics™  

VCX™  

HiSeC™  

Quiet Series™  

SILENT SWITCHER  

SMART START™  

SuperSOT™-3  

SuperSOT™-6  

SuperSOT™-8  

ISOPLANAR™  

MICROWIRE™  

OPTOLOGIC™  

OPTOPLANAR™  

PACMAN™  

POP™  

E

2

CMOS

TM  

EnSigna

TM  

FACT™  

FACT Quiet Series™  

FAST  

DISCLAIMER  

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  

NOTICE T

O

A

NY PRODUCTS HEREIN TO IMPROVE RELIABILIT

Y

,

F

UNCTION OR DESIGN. FAIRCHILD  

DOES NO

T

A

SSUM

E

A

NY LIABILIT

Y

A

RISING OUT OF TH

E

A

PPLICATION OR USE O

F

A

NY PRODUCT  

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  

RIGHTS, NOR THE RIGHTS OF OTHERS.  

LIFE SUPPORT POLICY  

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  

DEVICES OR SYSTEMS WITHOU

T

T

HE EXPRESS WRITTE

N

A

PPROVA

L

O

F FAIRCHILD SEMICONDUCTOR CORPORATION.  

As used herein:  

1. Life support devices or systems are devices or  

systems which, (a) are intended for surgical implant into  

the body, or (b) support or sustain life, or (c) whose  

failure to perform when properly used in accordance  

with instructions for use provided in the labeling, can be  

reasonably expected to result in significant injury to the  

user.  

2. A critical component is any component of a life  

support device or system whose failure to perform can  

be reasonably expected to cause the failure of the life  

support device or system, or to affect its safety or  

effectiveness.  

PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Advance Information  

Formative or  

In Design  

This datasheet contains the design specifications for  

product development. Specifications may change in  

any manner without notice.  

Preliminary  

First Production  

This datasheet contains preliminary data, and  

supplementary data will be published at a later date.  

Fairchild Semiconductor reserves the right to make  

changes at any time without notice in order to improve  

design.  

No Identification Needed  

Obsolete  

Full Production  

This datasheet contains final specifications. Fairchild  

Semiconductor reserves the right to make changes at  

any time without notice in order to improve design.  

Not In Production  

This datasheet contains specifications on a product  

that has been discontinued by Fairchild semiconductor.  

The datasheet is printed for reference information only.  

Rev. G  

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2N4126  

PNP General Purpose Amplifier  

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Contents  

•

General description  

•

Product status/pricing/packaging  

•

Order Samples  

•

Models  

•

Qualification Support  

Product Change Notices  

(PCNs)  

Datasheet  

Download this  

datasheet  

Support  

Sales support  

Quality and reliability  

Design center  

General description  

This device is designed for general purpose amplifier and switch-ing  

applications at collector currents to 10 µA as a switch and to 100 mA as an  

amplifier.  

e-mail this datasheet  

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Product status/pricing/packaging  

Product  

Product status  

Pb-free Status  

Pricing*  

Package type

 

Leads  

Packing method  

Package Marking Convention**  

2N4126BU  

Full Production  

$0.025  

TO-92  

3

BULK  

Line 1: 2N Line 2: 4126 Line 3: -&3  

2N4126TA  

Full Production  

$0.025  

TO-92  

3

AMMO  

Line 1: 2N Line 2: 4126 Line 3: -&3  

2N4126TAR  

2N4126TF  

Full Production  

Full Production  

$0.025  

$0.025  

TO-92  

TO-92  

3

3

AMMO  

Line 1: 2N Line 2: 4126 Line 3: -&3  

Line 1: 2N Line 2: 4126 Line 3: -&3  

TAPE REEL  

2N4126TFR  

Full Production  

$0.025  

TO-92  

3

TAPE REEL  

Line 1: 2N Line 2: 4126 Line 3: -&3  

* Fairchild 1,000 piece Budgetary Pricing  

** A sample button will appear if the part is available through Fairchild’s on-line samples program. If there is no sample button, please  

contact a

Fairchild distributor

to obtain samples  

Indicates product with Pb-free second-level interconnect. For more information

click here.  

Package marking information for product 2N4126 is available.

Click here for more information

.  

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Models  

Package & leads  

TO-92-3  

Condition  

Temperature range  

PSPICE  

Software version  

Revision date  

Electrical  

25°C  

N/A  

N/A  

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Qualification Support  

Click on a product for detailed qualification data  

Product  

2N4126BU  

2N4126TA  

2N4126TAR  

2N4126TF  

2N4126TFR  

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