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July 2014
2N4403 / MMBT4403
PNP General-Purpose Amplifier
Description
This device is designed for use as a general-purpose
amplifier and switch for collector currents to 500 mA.
C
E
TO-92
EB C
SOT-23
Mark:2T
B
Figure 1. 2N4403 Device Package
Figure 2. MMBT4403 Device Package
Ordering Information
Part Number
2N4403BU
2N4403TF
Marking
2N4403
2N4403
2N4403
2N4403
2N4403
2T
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Packing Method
Bulk
T
a
pe and Reel
T
a
pe and Reel
Ammo
2N4403TFR
2N4403TA
2N4403TAR
MMBT4403
Ammo
T
a
pe and Reel
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Value
-40
Unit
V
Collector-Base Voltage
Emitter-Base Voltage
-40
V
-5.0
V
Collector Current – Continuous
-600
mA
°
C
T
J,
T
STG
Operating and Storage Junction
T
e
mperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150
°
C.
-55 to +150
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Max.
Symbol
Parameter
T
o
tal Device Dissipation
Unit
2N4403
(3)
625
MMBT4403
(4)
350
2.8
mW
mW/
°
C
°
C/W
P
D
Derate Above 25
°
C
5.0
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
357
°
C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
2
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
Collector-Emitter Breakdown
Voltage
(5)
V
(BR)CEO
V
(BR)CBO
I
C
= -1.0 mA, I
B
= 0
I
C
= -0.1 mA, I
E
= 0
-40
V
V
Collector-Base Breakdown
Voltage
-40
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -0.1 mA, I
C
= 0
-5.0
V
I
BL
Base Cut-Off Current
V
CE
= -35
V
,
V
EB
= -0.4 V
V
CE
= -35
V
,
V
EB
= -0.4 V
-0.1
-0.1
μ
A
μ
A
I
CEX
Collector Cut-Off Current
On Characteristics
I
C
= -0.1 mA, V
CE
= -1.0 V
I
C
= -1.0 mA, V
CE
= -1.0 V
I
C
= -10 mA, V
CE
= -1.0 V
I
C
= -150 mA, V
CE
= -2.0 V
(5)
I
C
= -500 mA, V
CE
= -2.0 V
(5)
I
C
= -150 mA, I
B
= -15 mA
I
C
= -500 mA, I
B
= -50 mA
I
C
= -150 mA, I
B
= -15 mA
(5)
I
C
= -500 mA, I
B
= -50 mA
30
60
h
FE
DC Current Gain
100
100
20
300
-0.40
-0.75
-0.95
-1.30
Collector-Emitter Saturation
Voltage
(5)
V
CE
(sat)
V
V
-0.75
200
V
BE
(sat) Base-Emitter
Saturation Voltage
Small Signal Characteristics
I
C
= -20 mA, V
CE
= -10
V
,
f = 100 MHz
f
T
Current Gain – Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
MHz
pF
V
CB
= -10
V
,
I
E
= 0,
C
cb
C
eb
h
ie
8.5
30
f = 140 kHz
V
BE
= -0.5
V
, I
C
= 0,
f = 140 kHz
pF
I
C
= -1.0 mA, V
CE
= -10
V
,
f = 1.0 kHz
1.5
0.1
60
1
15.0
8.0
k
Ω
I
C
= -1.0 mA, V
CE
= -10
V
,
f = 1.0 kHz
h
re
h
fe
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
x10
-4
I
C
= -1.0 mA, V
CE
= -10
V
,
f = 1.0 kHz
500
100
I
C
= -1.0 mA, V
CE
= -10
V
,
f = 1.0 kHz
h
oe
μ
mhos
Switching Characteristics
t
d
t
r
Delay Time
Rise Time
Storage Time
Fall Time
15
20
ns
ns
ns
ns
V
CC
= -30
V
, I
C
= -150 mA,
I
B1
= -15 mA
t
s
t
f
225
30
V
CC
= -30
V
, I
C
= -150 mA,
I
B1
= I
B2
= -15 mA
Note:
5. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%.
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
3
Typical Performance Characteristics
0
.
5
0
.
4
0
.
3
0
.
2
0
.
1
0
500
V
CE
= 5V
β
= 10
400
125 °C
300
25 °C
25 °C
200
125
°
C
100
– 40 °C
– 40
°
C
0
0.1
0.3
1
3
10
30
100 300
I
C
– COLLECTOR CURRENT
(mA)
1
10
1
0
0
5
0
0
I
C
– COLLECTOR C
U
R
R
E
N
T
(
m
A
)
Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Typical Pulsed Current Gain vs.
Collector Current
1
1
– 40
°
C
– 40
°
C
0
.
8
0
.
8
25 °C
0
.
6
25 °C
0
.
6
125
°
C
0
.
4
0
.
4
125°C
β
= 10
V
= 5V
CE
0
.
2
0
.
2
0
0
1
10
1
0
0
5
0
0
0
.
1
1
10
25
I
C
– COLLECTOR C
U
R
R
E
N
T
(
m
A
)
I
C
– COLLECTOR C
U
R
R
E
N
T
(mA)
Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
1
0
0
20
16
12
8
V
= 3
5
V
CB
10
1
C
ib
0
.
1
C
ob
4
0
.
0
1
0
25
50
75
1
0
0
°
1
2
5
0.1
1
10
50
T
A
– A
M
B
I
E
N
T
T
EMP
ERATURE (
C)
REVERSE BIAS VO
L
TA
G
E (V)
Figure 8. Input and Output Capacitance vs.
Reverse Bias Voltage
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
4
Typical Performance Characteristics
(Continued)
250
500
400
300
200
100
0
I
c
I
10
c
I
B1
=
I
B2
=
I
B1
= I
B2
=
10
200
150
100
50
V
= 15 V
V
= 15 V
cc
cc
t
s
t
f
t
t
r
off
t
on
t
d
0
10
100
– COLLECTOR CURRENT (mA)
1000
10
100
– COLLECTOR CURRENT (mA)
1000
I
I
C
C
Figure 10. Turn-On and Turn-Off Times vs.
Collector Current
Figure 9. Switching Times vs. Collector Current
50
20
1
SOT-223
0.75
TO-92
10
5
t
= 15 V
r
0.5
SOT-23
30 ns
60 ns
0.25
0
2
1
10
100
500
0
25
50
75
100
125
150
I
– COLLECTOR CURRENT (mA)
C
TEMPER
A
T
URE
(
o
C)
Figure 12. Power Dissipation vs.
Ambient Temperature
Figure 11. Rise Time vs.
Collector and Turn-On Base Currents
1.3
1.2
1.1
1
5
h
oe
h
h
h
re
ie
fe
h
and h
oe
re
h
2
1
re
h
oe
h
fe
h
0.5
ie
h
ie
0.9
0.8
I
= -10mA
= 25
o
C
A
V
T
= -10 V
C
T
0.2
CE
A
= 2
5
o
C
h
fe
0.1
_
_
_
_
_
_
1
2
5
10
20
50
-4
-8
-12
-16
-20
I
C
– COLLECTOR CURRENT (mA)
V
C
E
– COLLECTOR VO
L
TA
G
E (V)
Figure 14. Common Emitter Characteristics
Figure 13. Common Emitter Characteristics
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
5
Typical Performance Characteristics
(Continued)
1.5
I
V
= -10mA
= -10 V
h
h
h
h
C
CE
fe
ie
re
oe
1.4
1.3
1.2
1.1
1
h
oe
0.9
0.8
0.7
0.6
0.5
h
h
re
ie
h
fe
-40
-20
0
20
40
60
80
100
T
A
– AMBIENT TEMPER
A
T
URE
(
o
C)
Figure 15. Common Emitter Characteristics
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
6
Physical Dimensions
TO-92 3L (
T
a
pe and Reel, Ammo)
Figure 16. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
7
Physical Dimensions
(Continued)
TO-92 3L (Bulk)
D
Figure 17. 3-LEAD, JEDEC TO-92 COMPLIANT STRAGHIT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
8
Physical Dimensions
(Continued)
SOT-23 3L
0.95
2.92 0.20
3
1.40
+0.20
1.30
2.20
1.00
-0.15
1
2
0.60
0.37
(0.29)
0.95
0.20
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE
JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M – 1994.
0.23
0.08
0.25
0.20 MIN
(0.55)
E) DRAWING
FILE NAME: MA03DREV10
SEATING
PLANE
SCALE: 2X
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
9
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®
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
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Semiconductor Components Industries, LLC
