onsemi-2N5086
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2N5086/2N5087/MMBT5087
3
PNP General Purpose Amplifier
•
This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
2
SOT-23
Mark: 2Q
TO-92
1. Emitter
2. Base
3. Collector
1
1
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings*
T =25
°
C unless otherwise noted
a
Symbol
Parameter
Value
-50
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
CEO
-50
V
CBO
EBO
-3.0
V
I
– Continuous
-100
mA
°
C
C
T , T
Junction and Storage
T
e
mperature
-55 ~ +150
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These
ratings are based on a maximum junction temperature of 150 degrees C.
2. These
are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T =25
°
C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Collector Cutoff Current
I
I
= -1.0mA, I
= 0
-50
-50
V
V
(BR)CEO
(BR)CBO
CEO
C
B
= -100
µ
A, I
= 0
C
E
I
V
V
= -10V, I
= 0
-10
-50
nA
nA
CB
CB
E
= -35V, I
= 0
E
I
Emitter Cutoff Current
V
= -3.0
V
, I
= 0
-50
nA
CBO
EB
C
On Characteristics
h
DC Current Gain
I
I
I
= -100
µ
A, V
= -5.0V
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
FE
C
C
C
CE
= -1.0mA, V
= -5.0V
CE
= -10mA, V
= -5.0V
CE
V
V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= -10mA, I
= -1.0mA
-0.3
V
V
CE(sat)
C
B
= -1.0mA, V
= -5.0V
-0.85
BE(on)
C
CE
Small Signal Characteristics
f
Current Gain Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
I
= -500
µ
A, V
= -5.0
V
,
f =
2
0MHz
40
MHz
pF
T
C
CE
C
V
= -5.0
V
, I
=
0
, f = 100KHz
4.0
cb
CB
E
h
I
= -1.0mA, V
= -5.0
V
,
5086
5087
150
250
600
900
fe
C
CE
f = 1.0KHz
NF
Noise Figure
I
R
= -100
µ
A, V
= -5.0V
5086
5087
3.0
2.0
dB
dB
C
CE
= 3.0k
Ω
, f = 1.0KHz
S
I
R
= -20
µ
A, V
= -5.0V
5086
5087
3.0
2.0
dB
dB
C
CE
= 10k
Ω
S
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
©2003
Semiconductor Components Industries, LLC.
September
-2017, Rev. 2
Publication Order Number:
MMBT5087
/D
Thermal Characteristics
T =25
°
C unless otherwise noted
a
Max.
Symbol
Parameter
T
o
tal Device Dissipation
Units
2N5086
2N5087
*MMBT5087
P
625
5.0
350
2.8
mW
mW/
°
C
D
Derate above 25
°
C
R
R
Thermal Resistance, Junction to Case
83.3
200
°
C/W
°
C/W
θ
JC
θ
JA
Thermal Resistance, Junction to Ambient
357
* Device mounted on FR-4 PCB 1.6”
×
1.6”
×
0.06.”
2
Typical Characteristics
3
5
0
0
.
3
0
.
2
5
0
.
2
V
=
5
V
CB
β
= 10
125 °C
3
0
0
2
5
0
2
0
0
1
5
0
1
0
0
50
25 °C
0
.
1
5
0
.
1
25 C
°
125 C
°
– 40 °C
0
.
0
5
– 40
C
°
0
0
.
0
1 0
.
0
3
0
.
1
0
.
3
1
3
10
30
1
0
0
0
.
1
1
10
I
C
– COLLECTOR CU
R
R
ENT
(m
A
)
I
C
– COLLECTOR C
U
R
R
E
N
T
(
m
A
)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0
.
8
0
.
6
0
.
4
0
.
2
0
1
0
.
8
– 40
°
C
– 40
°
C
25
°
C
0
.
6
0
.
4
0
.
2
0
25
°
C
125
°
C
125
°
C
V
=
5
V
CE
β
= 10
0
.
1
1
10
50
0
.
1
1
10
25
I
C
– COLLECTOR C
U
R
R
E
N
T
(
m
A
)
I
C
– COLLECTOR C
U
R
R
E
N
T
(
m
A
)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
20
16
12
8
1
0
0
10
f = 1 MHz
V
= 4
0
V
CB
1
C
i
b
o
0
.
1
C
4
obo
0
.
0
1
0
25
50
75
1
0
0
1
2
5
0
4
8
12
16
20
T –
A
M
B
I
E
N
T
T
EMP ERATURE (
C)
°
REVERSE BIAS VO
L
TAGE
(
V
)
A
Figure 6. Input and Output Capacitance
vs Reverse Voltag
Figure 5. Collector Cutoff Current
vs Ambient Temperature
3
Typical Characteristics
(Continuce)
5
4
3
2
1
0
350
V
= 5V
CE
V
CE
= 5V
300
250
200
150
100
50
I
I
= – 250
µ
A, R
= 5.0 k
Ω
S
C
C
= – 500
µ
A, R
= 1.0 k
Ω
S
I
= – 20
µ
A, R
= 10 k
Ω
C
S
0
100
1000
10000
f – FREQUENCY (Hz)
1000000
0.1
1
10
100
I
– COLLECTOR CURRENT (mA)
C
Figure 7. Gain Bandwidth Product
vs Collector Current
Figure 8. Noise Figure vs Frequency
8
6
4
2
0
625
500
375
250
125
0
V
CE
= 5V
TO-92
BANDWIDTH = 15.7 kHz
I
= 10
µ
A
C
SOT-23
I
= 100
µ
A
C
1,000
2
,
000
5,000
10,000
20,000
50,000
100,000
0
25
50
75
100
125
150
TEMPER
A
T
URE (
o
C)
R
– SOURCE RESIS
T
A
NCE (
Ω
)
S
Figure 9. Wideband Noise Frequency
vs Source Resistance
Figure 10. Power Dissipation vs
Ambient Temperature
0.1
10
5
V
CE
= – 5.0V
V
CE
= – 5.0V
0.05
Hz
0
0
1
=
f
, f
n
0.02
0.01
2
1
z
i
n
i
H
k
.0
1
=
,
z
H
k
0
1
e
, f = 100 Hz
=
n
, f
i
n
0.
0
05
0.5
e
, f = 1.0 kHz
n
e
, f = 10 kHz
0.2
0.1
0.
0
02
0.
0
01
n
0.
0
01
0.01
0.1
1
0.001
0.01
0.1
1
I
– COLLECTOR CURRENT (mA)
I
C
– COLLECTOR CURRENT (mA)
C
Figure 12. Equivalent Input Noise Voltage
vs Collector Current
Figure 11. Equivalent Input Noise Current
vs Collector Current
4
Typical Characteristics
(Continuce)
1,0
0
0,000
100,000
10,000
1,000
1,0
0
0,000
100,000
10
,
000
V
CE
= – 5V
f = 1
0
0 Hz
BANDWIDTH = 15 Hz
1,000
V
CE
= – 5V
f = 10 kHz
S
B
A
N
DWIDTH = 1.5 kHz
100
100
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I
– COLLECTOR CURRENT (mA)
I
– COLLECTOR CURRENT (mA)
C
C
Figure 13. Contours of Constanct
Narrow Band Noise Figure
Figure 14. Contours of Constanct
Narrow Band Noise Figure
1,0
0
0,000
100,000
10,000
1,000
10,000
5
,
000
V
CE
= – 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
2
,
000
1
,
000
500
4.
0
d
B
V
CE
= – 5V
f = 10 MHz
BANDWIDTH
= – 2 kHz
200
100
100
0.001
0.01
0.1
1
10
0.01
0.1
1
I
– COLLECTOR CURRENT (mA)
C
I
– COLLECTOR CURRENT (mA)
C
Figure 15. BContours of Constant
Narrow Band Noise Figure
Figure 16. Contours of Constant
Narrow Band Noisd Figure
5
Typical Common Emitter Characteristics
(f = 1.0KHz)
1
0
0
10
1
.
6
1
.
4
1
.
2
1
h
h
oe
fe
h
a
n
d h
ie
fe
1
h
oe
0
.
8
0
.
6
0
.
4
f = 1.0 k
H
z
= –
5
.
0
V
f = 1.0 k
H
z
= 1.0 mA
h
5
0
.
1
0
.
0
1
ie
V
I
CE
C
°
T
A
= –
2
5 C
°
T
A
= -25 C
0
.
1
0
.
2
0
.
5
1
2
10
0
-5
–
1
0
–
1
5
–
2
0
–
2
5
I
C
– COLLEC
T
O
R
C
U
R
R
E
N
T (
m
A
)
V
CE
– COLLEC
T
O
R-E
M
I
T
T
E
R
V
OL
T
A
GE (V)
Typical Common Emitter Characteristics
Typical Common Emitter Characteristics
2
V
= –
5
.
0
V
CE
h
I
= 1.0 mA
ie
1
.
8
1
.
6
1
.
4
1
.
2
1
C
f = 1.0 k
H
z
h
h
fe
h
a
n
d h
oe
fe
oe
0
.
8
0
.
6
0
.
4
h
ie
–
6
0
–
4
0
–
2
0
0
20
40
60
80
1
0
0
T
A
– A
M
B
I
E
N
T
T
EM
P
E
R
A
T
U
R
E (
C
)
°
Typical Common Emitter Characteristics
6
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46
±
0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27
±
0.20
]
[1.27
±
0.20
]
3.60
±
0.20
(R2.29)
Dimensions in Millimeters
7
Package Dimensions
(Continued)
SOT-23
0.40
±
0.03
0.03~0.10
0.38 REF
+0.05
–
0.023
0.40
±
0.03
0.12
0.96~1.14
2.90
±
0.10
0.95
±
0.03
0.95
±
0.03
1.90
±
0.03
0.508REF
Dimensions in Millimeters
8
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