onsemi-2N5401YBU
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May 2016
2N5401
Amplifier Transistor
Features
• Collector-Emitter
Voltage: V
CEO
= 150V
• Collector
Dissipation: P
C
(max) = 625mW
• Suffix
“-C” means Conter Collector (1. Emitter 2. Collector 3. Base)
TO-92
1. Emitter
2. Base
3. Collector
1
Ordering Information
Part Number
2N5401YBU
2N5401YTA
Top Mark
2N5401
Package
TO-92 3L
TO-92 3L
Packing Method
Pack Quantity
10000
2000
Bulk
2N5401
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25 C unless otherwise noted
.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-160
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-150
V
-5
V
-600
mA
C
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to 150
© 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1
1
Thermal Characteristics
(1)
Values are at T
A
= 25 C unless otherwise noted.
Symbol
Parameter
Max.
625
5
Unit
mW
T
o
tal Device Dissipation
P
D
Derate above 25
C
mW/ C
C/W
R
Thermal Resistance, Junction to Ambient
200
JA
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
(2)
I
C
= -1 mA, I
B
= 0
Parameter
Conditions
Min. Typ.
Max. Unit
I
C
= -100
A, I
E
= 0
-160
-150
-5
V
V
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -10
A, I
C
= 0
V
CB
= -120 V, I
E
= 0
V
EB
= -3 V, I
C
= 0
I
CBO
I
EBO
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-50
A
A
I
C
= -1 mA, V
CE
= -5 V
30
60
Standard Class
Y Class
240
240
I
C
= -10 mA,
V
CE
= -5 V
h
FE1
DC Current Gain
(2)
120
50
I
C
= -50 mA, V
CE
= -5 V
I
C
= -10 mA, I
B
= -1 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -10 mA, I
B
= -1 mA
I
C
= -50 mA, I
B
= -5 mA
-0.2
-0.5
-1.0
-1.0
V
V
CE(sat)
Collector-Emitter Saturation Voltage
(2)
V
BE(sat)
Base-Emitter Saturation Voltage
(2)
V
V
V
I
V
C
= -10 mA,
CE
= -10
V
, f =
1
00 MHz
f
T
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
100
400 MHz
C
ob
N
F
V
CB
= -10 V, I
E
= 0, f = 1 MHz
6
8
pF
dB
I
C
= -250
A, V
CE
= -5
V
,R
S
= 1 k
,
f = 10 Hz to 15.7 kHz
Note:
2. Pulse Test: Pulse Width
300 s,
Duty Cycle
2%.
© 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1
2
Typical Characteristics
1000
-10
V
CE
= -5V
I
C
= 10 I
B
V
BE
(sat)
-1
100
V
CE
(sat)
-0.1
-0.01
10
-1
-10
-100
-1000
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
-1000
-100
-10
I
E
= 0
f = 1MHz
V
CE
= -5V
10
1
-1
-0.0
0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Output Capacitance
1000
100
10
V
CE
= -10V
1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
© 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1
3
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