onsemi-2N5550BU
| Part # | onsemi-2N5550BU |
Download  | onsemi-2N5550BU |
February 2015
2N5550
NPN Epitaxial Silicon Transistor
Features
• Amplifier
Transistor
• Collector-Emitter
Voltage: V
CEO
= 140 V
TO-92
1. Emitter
2. Base
3. Collector
1
Ordering Information
Part Number
2N5550BU
2N5550TA
Top Mark
2N5550
2N5550
2N5550
2N5550
2N5550
Package
Packing Method
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Bulk
Ammo
2N5550TAR
2N5550TF
Ammo
T
a
pe and Reel
T
a
pe and Reel
2N5550TFR
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
160
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
140
V
6
V
600
mA
°C
°C
T
J
Junction
T
e
mperature
Storage
T
e
mperature
150
T
STG
-55 to 150
© 2000 Fairchild Semiconductor Corporation
2N5550 Rev. 1.4
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Parameter
Max.
625
5.0
Unit
mW
T
o
tal Device Dissipation
Derate Above 25
°
C
mW/
°
C
°
C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
200
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
Parameter
Conditions
Min.
160
140
6
Typ.
Max. Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(2)
I
C
= 1 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
V
V
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
I
E
= 10
μ
A, I
C
= 0
V
CB
= 100
V
, I
E
= 0
V
EB
= 4
V
, I
C
= 0
100
50
nA
nA
I
EBO
I
C
= 1 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 5 V
I
C
= 10 mA, I
B
= 1 mA
60
60
20
h
FE
DC Current Gain
(2)
250
0.15
0.25
1.0
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage
(2)
Base-Emitter Saturation Voltage
(2)
V
V
I
C
= 50 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
C
= 50 mA, I
B
= 5 mA
I
1.2
I
C
= 10 mA, V
CE
= 10 V
f = 100 MHz
f
T
Current Gain Bandwidth Product
Output Capacitance
100
300
6
MHz
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
C
ob
I
C
= 250
μ
A, V
CE
= 5 V,
R
S
= 1 k
Ω
,f = 10 Hz to
15.7 kHz
NF
Noise Figure
10
dB
Note:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%
© 2000 Fairchild Semiconductor Corporation
2N5550 Rev. 1.4
2
Typical Performance Characteristics
250
125
o
C
V
CE
=5V
10
100
o
C
200
75
o
C
1
150
25
o
C
125
o
C
100
o
C
100
-40
o
C
0.1
0.01
75
o
C
50
0
25
o
C
-40
o
C
1
10
100
1
10
100
1000
I
C
– COLLECTOR CURRENT [mA]
I
C
– COLLECTOR CURRENT [mA]
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1.0
1.2
T
A
= -40
o
C
-40
o
C
0.8
1.0
T
A
= 25
o
C
25
o
C
0.8
T
A
= 75
o
C
125
o
C
0.6
0.6
100
o
C
T
A
= 100
o
C
75
o
C
0.4
T
A
= 125
o
C
0.4
0.2
0.2
0.0
1
10
100
1
10
100
1000
I
C
– COLLECTOR CURRENT [mA]
I
C
– COLLECTOR CURRENT [mA]
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Current
100
50
V
CB
=
1
0
0
V
10
10
C
IB
C
OB
1
25
1
50
75
1
0
0
1
2
5
0
1
2
3
4
5
6
7
8
9
10
T –
A
M
B
I
E
N
T
T
EM
P
E
R
A
T
U
R
E (
C
)
°
A
REVERSE BIAS VOLTAGE [V]
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
Figure 6. Input and Output Capacitance vs.
Reverse Voltage
© 2000 Fairchild Semiconductor Corporation
2N5550 Rev. 1.4
3
Typical Performance Characteristics
(Continued)
16
260
240
220
200
180
160
FREG = 20 MHz
V
CE
= 10V
I
= 1.0 mA
C
12
8
4
0
0.1
1
10
100
1000
1
10
I
C
– COLLECTOR CURRENT
(mA)
50
RESISTANCE (k
Ω
)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base
Figure 8. Small Signal Current Gain vs.
Collector Current
700
600
500
400
300
200
100
0
TO-92
SOT-23
0
25
50
75
100
125
150
TEMPER
A
T
URE (
o
C)
Figure 9. Power Dissipation vs.
Ambient Temperature
© 2000 Fairchild Semiconductor Corporation
2N5550 Rev. 1.4
4
Physical Dimensions
D
Figure 10. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
© 2000 Fairchild Semiconductor Corporation
2N5550 Rev. 1.4
5
Physical Dimensions
(Continued)
Figure 11. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
© 2000 Fairchild Semiconductor Corporation
2N5550 Rev. 1.4
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
OPTOPLANAR
®
AccuPower
¥
AttitudeEngine™
Awinda
®
F-PFS
¥
®*
FRFET
®
Global Power Resource
SM
GreenBridge
¥
Green FPS
¥
Green FPS
¥
e-Series
¥
G
max
¥
TinyBoost
®
TinyBuck
®
TinyCalc
¥
TinyLogic
®
TINYOPTO
¥
TinyPower
¥
TinyPWM
¥
TinyWire
¥
TranSiC
¥
®
AX-CAP
®
*
PowerTrench
®
PowerXS™
Programmable Active Droop
¥
QFET
®
BitSiC
¥
Build it Now
¥
CorePLUS
¥
CorePOWER
¥
CROSSVOLT
¥
CTL
¥
GTO
¥
IntelliMAX
¥
QS
¥
Quiet Series
¥
RapidConfigure
¥
¥
ISOPLANAR
¥
Making Small Speakers Sound Louder
and Better™
MegaBuck
¥
MICROCOUPLER
¥
MicroFET
¥
Current Transfer Logic
¥
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficientMax
¥
TriFault Detect
¥
TRUECURRENT
®
*
μ
SerDes
¥
Saving our world, 1mW/W/kW at a time™
SignalWise
¥
SmartMax
¥
SMART START
¥
Solutions for Your Success
¥
SPM
®
ESBC
¥
MicroPak
¥
®
UHC
®
MicroPak2
¥
MillerDrive
¥
MotionMax
¥
MotionGrid
®
Ultra FRFET
¥
UniFET
¥
VCX
¥
VisualMax
¥
VoltagePlus
¥
XS™
Fairchild
®
STEALTH
¥
Fairchild Semiconductor
®
FACT Quiet Series
¥
FACT
®
SuperFET
®
SuperSOT
¥
-3
MTi
®
SuperSOT
¥
-6
SuperSOT
¥
-8
SupreMOS
®
MTx
®
FAST
®
MVN
®
FastvCore
¥
FETBench
¥
FPS
¥
mWSaver
®
Xsens™
SyncFET
¥
Sync-Lock™
OptoHiT
¥
❺
™
OPTOLOGIC
®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. T
O OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE
AT
HTTP://WWW.FAIRCHILDSEMI.COM.
FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect oursel
v
e
s and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I73
© Fairchild Semiconductor Corporation
