onsemi-2N5551TF
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March
March 2018
8
2N5551 / MMBT5551
NPN General-Purpose Amplifier
Description
This device is designed for general-purpose high-voltage
amplifiers and gas discharge display drivers.
2N5551
MMBT5551
3
2
TO-92
SOT-23
1
Marking: 3S
1. Base
2. Emitter
3. Collector
Ordering Information
(1)
Part Number
2N5551TA
Top Mark
5551
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Packing Method
Ammo
2N5551TFR
2N5551TF
5551
T
a
pe and Reel
T
a
pe and Reel
Bulk
5551
2N5551BU
MMBT5551
5551
3S
T
a
pe and Reel
Note:
1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix “-Y” means h
FE
180~240 in 2N5551 (
T
e
st condition: I
C
= 10 mA, V
CE
= 5.0 V)
© 2009 Semiconductor C
o
mponents Industries, LLC.
,
www.
on
semi.com
2N5551 / MMBT5551 Rev.
2
1
Absolute Maximum Ratings
(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Value
160
Units
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
180
V
6
V
Collector current – Continuous
600
mA
°
C
(
3
)
Junction and Storage
T
e
mperature
-55 to +150
T
J
,
T
stg
Notes:
2.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3.
These ratings are based on a maximum junction temperature of 150
°
C.
These are steady-state limits.
ON
Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
Thermal Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Maximum
Symbol
Parameter
T
o
tal Device Dissipation
Units
2N5551
625
MMBT5551
350
2.8
mW
mW/
°
C
°
C/W
P
D
Derate above 25
°
C
5.0
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
357
°
C/W
Note:
4
. PCB board size FR-4 76 x 114 x 0.6 T mm
3
(3.0 inch
×
4.5 inch
×
0.062 inch) with minimum land pattern size.
© 2009 Semiconductor Co
mponents Industries, LLC.
2N5551 / MMBT5551 Rev.
2
www.
on
semi.com
2
Electrical Characteristics
(
5
)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Test Condition
Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
160
180
6.0
V
V
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
V
CB
= 120
V
, I
E
= 0
V
CB
= 120
V
, I
E
= 0, T
A
= 100
°
C
V
EB
= 4.0
V
, I
C
= 0
50
50
50
nA
μ
A
nA
I
CBO
Collector Cut-Off Current
I
EBO
Emitter Cut-Off Current
On Characteristics
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 50 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
80
80
30
h
FE
DC Current Gain
250
0.15
0.20
1.0
V
V
V
V
V
CE(sat)
Collector-Emitter Saturation Voltage
V
BE(sat)
Base-Emitter On Voltage
1.0
Small-Signal Characteristics
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
f
T
Current Gain Bandwidth Product
100
50
MHz
C
obo
C
ibo
H
fe
Output Capacitance
Input Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
BE
= 0.5
V
, I
C
= 0, f = 1.0 MHz
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz
6.0
20
pF
pF
Small-Signal Current Gain
250
I
C
= 250
μ
A, V
CE
= 5.0
V
,
R
S
=1.0 k
Ω
, f=10 Hz to 15.7 kHz
NF
Noise Figure
8.0
dB
Note:
5
.
Pulse test: pulse width
≤
300
µ
s, duty cycle
≤
2.0%.
© 2009 Semiconductor Co
mponents Industries, LLC.
2N5551 / MMBT5551 Rev.
2
www.
on
semi.com
3
Typical Performance Characteristics
250
125
o
C
V
CE
=5V
10
100
o
C
200
75
o
C
1
150
25
o
C
125
o
C
100
o
C
100
-40
o
C
0.1
0.01
75
o
C
50
0
25
o
C
-40
o
C
1
10
100
1
10
100
1000
I
C
– COLLECTOR CURRENT [mA]
I
C
– COLLECTOR CURRENT [mA]
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1.0
1.2
T
A
= -40
o
C
-40
o
C
0.8
1.0
T
A
= 25
o
C
25
o
C
0.8
T
A
= 75
o
C
125
o
C
0.6
0.6
100
o
C
T
A
= 100
o
C
75
o
C
0.4
T
A
= 125
o
C
0.4
0.2
0.2
0.0
1
10
100
1
10
100
1000
I
C
– COLLECTOR CURRENT [mA]
I
C
– COLLECTOR CURRENT [mA]
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs. Collector
Current
100
50
V
CB
=
1
0
0
V
10
10
C
IB
C
OB
1
1
25
0
1
2
3
4
5
6
7
8
9
10
50
75
1
0
0
1
2
5
T –
A
M
B
I
E
N
T
T
EM
P
E
R
A
T
U
R
E (
C
)
°
A
REVERSE BIAS VOLTAGE [V]
Figure 5. Collector Cut-Off Current vs. Ambient
Temperature
Figure 6. Input and Output Capacitance vs. Reverse
Voltage
© 2009 Semiconductor Co
mponents Industries, LLC.
2N5551 / MMBT5551 Rev.
2
www.
on
semi.com
4
Typical Performance Characteristics
(Continued)
260
16
12
8
FREG = 20 MHz
V
CE
= 10V
I
= 1.0 mA
C
240
220
200
180
160
4
F
E
0
0.1
1
10
100
1000
1
10
I
C
– COLLECTOR CURRENT
(mA)
50
RESISTANCE (k
Ω
)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base
Figure 8. Small Signal Current Gain vs. Collector
Current
700
600
500
400
300
200
100
0
TO-92
SOT-23
D
0
25
50
75
100
125
150
TEMPER
A
T
URE (
o
C)
Figure 9. Power Dissipation vs. Ambient
Temperature
© 2009 Semiconductor Co
mponents Industries, LLC.
2N5551 / MMBT5551 Rev.
2
www.
on
semi.com
5
Physical Dimensions
TO-92 (Bulk)
D
Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
(ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any
manner without notice. Please note the revision and/or date on the drawing and contact an ON Semiconductor representative to verify
or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions,
specifically the warranty therein, which covers ON Semiconductor’s products.
© 2009 Semiconductor Co
mponents Industries, LLC.
2N5551 / MMBT5551 Rev.
2
www.
on
semi.com
6
Physical Dimensions
(Continued)
TO-92 (
T
a
pe and Reel, Ammo)
D
Figure 11. 3-LEAD, TO92, MOLDED, 0.200 IN-LINE SPACING LD FORM(J62Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any
manner without notice. Please note the revision and/or date on the drawing and contact an ON Semiconductor representative to verify
or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions,
specifically the warranty therein, which covers ON Semiconductor’s products.
© 2009 Semiconductor Co
mponents Industries, LLC.
2N5551 / MMBT5551 Rev.
2
www.
on
semi.com
7
Physical Dimensions
(Continued)
SOT-23
0.95
2.92 0.20
3
1.40
+0.20
1.30
2.20
1.00
-0.15
1
2
0.60
0.37
(0.29)
0.95
0.20
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE
JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M – 1994.
0.23
0.08
0.25
0.20 MIN
(0.55)
E) DRAWING
FILE NAME: MA03DREV10
SEATING
PLANE
SCALE: 2X
Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any
manner without notice. Please note the revision and/or date on the drawing and contact an ON Semiconductor representative to verify
or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions,
specifically the warranty therein, which covers ON Semiconductor’s products.
© 2009 Semiconductor Co
mponents Industries, LLC.
2N5551 / MMBT5551 Rev.
2
www.
on
semi.com
8
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