onsemi-2N6038G
| Part # | onsemi-2N6038G |
Download  | onsemi-2N6038G |
2N6034G, 2N6035G,
2N6036G (PNP),
2N6038G,ꢀ2N6039G (NPN)
Plastic Darlington
Complementary Silicon
Power
T
r
ansistors
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
40, 60, 80 VOLTS, 40 WATTS
•
ESD Ratings:
Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
NPN
PNP
COLLECTOR 2, 4
COLLECTOR 2, 4
•
Epoxy Meets UL 94 V−0 @ 0.125 in
•
These Devices are Pb−Free and are RoHS Compliant*
BASE
3
BASE
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
V
Vdc
EMITTER 1
EMITTER 1
CEO
40
60
80
2N6038
2N6039
2N6034
2N6035
2N6036
Collector−Base Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
V
CBO
Vdc
40
60
80
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
V
I
5.0
4.0
8.0
100
Vdc
Adc
EBO
TO−225
CASE 77−09
STYLE 1
I
C
Apk
CM
I
B
mAdc
1
2
3
T
o
tal Device Dissipation
P
D
D
@ T
= 25
°
C
40
320
W
mW/
°
C
C
Derate above 25
°
C
MARKING DIAGRAM
T
o
tal Device Dissipation
P
@ T
= 25
°
C
1.5
12
W
mW/
°
C
C
Derate above 25
°
C
YWW
2
N603xG
Operating and Storage Junction
T
e
mperature Range
T , T
–
6
5 to
+
1
50
°
C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
=
Y
e
ar
= Work Week
2N603x =
Device Code
x = 4, 5, 6, 8, 9
THERMAL CHARACTERISTICS
G
= Pb−Free Package
Characteristic
Symbol
Max
3.12
83.3
Unit
°
C/W
°
C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
JA
ORDERING INFORMATION
R
q
See detailed ordering and shipping information in the package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 15
2N6035/D
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I =
100 mAdc, I
= 0)
V
Vdc
CEO(sus)
C
B
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
40
60
80
−
−
−
Collector−Cutoff Current
I
m
A
m
A
CEO
(V =
40 Vdc, I
= 0)
CE
B
2N6034G
−
−
−
100
100
100
(V =
60 Vdc, I
= 0)
CE
B
2N6035G, 2N6038G
(V =
80 Vdc, I
= 0)
CE
B
2N6036G, 2N6039G
Collector−Cutoff Current
I
CEX
(V =
40 Vdc, V
2N6034G
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc)
CE
BE(off)
−
−
−
−
−
−
100
100
100
500
500
500
(V =
60 Vdc, V
CE
BE(off)
2N6035G, 2N6038G
(V =
80 Vdc, V
CE
BE(off)
2N6036G, 2N6039G
(V =
40 Vdc, V
= 1.5 Vdc, T
= 125
_
C)
= 1.5 Vdc, T
= 125
_
C)
= 1.5 Vdc, T
= 125
_
C)
CE
BE(off)
C
2N6034G
(V =
60 Vdc, V
CE
BE(off)
C
2N6035G, 2N6038G
(V =
80 Vdc, V
CE
BE(off)
C
2N6036G, 2N6039G
Collector−Cutoff Current
I
mAdc
CBO
(V =
40 Vdc, I
= 0)
2N6034G
CB
E
−
−
−
0.5
0.5
0.5
(V =
60 Vdc, I
= 0)
CB
E
2N6035G, 2N6038G
(V =
80 Vdc, I
= 0)
CB
E
2N6036G, 2N6039G
Emitter−Cutoff Current
I
mAdc
−
EBO
(V =
5.0 Vdc, I
= 0)
−
2.0
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
0.5 Adc, V
= 3.0 Vdc)
500
750
100
−
15,000
−
C
CE
(I =
2.0 Adc, V
= 3.0 Vdc)
C
CE
(I =
4.0 Adc, V
= 3.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
2.0 Adc, I
= 8.0 mAdc)
V
V
Vdc
CE(sat)
−
−
C
B
2.0
3.0
(I =
4.0 Adc, I
= 40 mAdc)
C
B
Base−Emitter Saturation Voltage
(I =
4.0 Adc, I
= 40 mAdc)
Vdc
Vdc
BE(sat)
−
−
4.0
2.8
C
B
Base−Emitter On Voltage
(I =
2.0 Adc, V
= 3.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Small−Signal Current−Gain
|h |
fe
25
−
−
(I =
0.75 Adc, V
= 10 Vdc, f = 1.0 MHz)
C
CE
Output Capacitance
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
C
pF
ob
CB
E
2N6034G, 2N6035G, 2N6036G
2N6038G, 2N6039G
−
−
200
100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data.
2
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
V
CC
-ꢂ30 V
R &
R VARIED
TO OBTAIN DESIRED CURRENT LEVELS
B
C
D MUST
BE FAST RECOVERY TYPE, eg:
1
ꢀ1N5825 USED ABOVE I
≈
100 mA
B
R
C
SCOPE
ꢀMSD6100 USED BELOW I
≈
100 mA
B
TUT
V
2
R
B
approx
+ꢂ8.0 V
D
1
≈
8.0 k
51
≈
60
0
V
1
+ꢂ4.0 V
approx
-12 V
25
m
s
for t
and t , D
is disconnected
d
r
1
and V
= 0, R
and R
are varied
to obtain desired test currents.
2
B
C
t , t
≤
10 ns
r
f
DUTY CYCLE = 1.0%
For NPN test circuit, reverse diode,
polarities and input pulses.
Figure 1. Switching Times Test Circuit
4.0
2.0
V
= 30 V
I
= I
CC
B1 B2
t
s
I /I
= 250
T =
25
°
C
C B
J
t
f
1.0
0.8
t
r
0.6
0.4
t @
V
d
= 0
BE(off)
PNP
NPN
0.2
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
q
q
(t) = r(t)
q
JC
JC
JC
0.05
0.1
0.07
0.05
= 3.12
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
1
0.01
1
t
2
0.03
0.02
SINGLE PULSE
T
– T
= P
q
(t)
C (pk)
JC
J(pk)
DUTY CYCLE, D = t
/t
1 2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500
1000
t, TIME (ms)
Figure 3. Thermal Response
3
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
ACTIVE−REGION SAFE−OPERATING AREA
1.0
7.0
1.0
7.0
100
m
s
100
m
s
5.0ꢁms
5.0ꢁms
1.0ꢁms
5.0
5.0
1.0ꢁms
3.0
2.0
3.0
2.0
dc
dc
T =
150
°
C
BONDING WIRE LIMITED
T =
150
°
C
J
J
1.0
0.7
1.0
0.7
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED
THERMALLY LIMITED
0.5
@ T
= 25
°
C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
@ T
= 25
°
C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
0.3
0.2
0.3
0.2
2N6036
2N6035
2N6039
2N6038
0.1
5.0
0.1
5.0
7.0
10
20
30
50
70
100
7.0
10
20
30
50
70
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. 2N6035, 2N6036
Figure 5. 2N6038, 2N6039
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
− V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T =
25
°
C
C
C
CE
100
70
50
T is
variable depending on conditions. Second breakdown
C
= 150
_
C;
J(pk)
C
ob
30
20
C
pulse limits are valid for duty cycles to 10% provided T
ib
J(pk)
< 150
_
C. T
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
PNP
NPN
10
0.04 0.06 0.1
0.2 0.4
0.6 1.0
2.0 4.0
6.0 10
20
40
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
PNP
NPN
2N6034, 2N6035, 2N6036
2N6038, 2N6039
6.0 k
6.0 k
V
CE
= 3.0 V
V
CE
= 3.0 V
T =
125
°
C
C
T =
125
°
C
J
4.0 k
3.0 k
4.0 k
3.0 k
25
°
C
25
°
C
2.0 k
2.0 k
-ꢂ55
°
C
-ꢂ55
°
C
1.0 k
800
1.0 k
800
600
600
400
300
0.04 0.06
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 7. DC Current Gain
4
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
3.4
3.0
3.4
T =
25
°
C
J
T =
25
°
C
J
3.0
I =
C
0.5 A
I =
C
0.5 A
2.6
2.2
2.6
2.2
1.8
1.4
1.0 A
4.0 A
2.0 A
1.0 A
2.0 A
4.0 A
1.8
1.4
1.0
0.6
1.0
0.6
0.1 0.2
0.5
1.0 2.0
5.0 10
20
5
1
0
0
0
0.1 0.2 0.5
1.0 2.0
5.0
10
20
50
100
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 8. Collector Saturation Region
2.2
1.8
1.4
1.0
0.6
0.2
2.2
T =
25
°
C
T =
25
°
C
J
J
1.8
V
@ I
/I =
250
C B
BE(sat)
V
@ I
/I =
250
C B
BE(sat)
V
BE
@ V
= 3.0 V
CE
1.4
1.0
0.6
0.2
V
@ V
= 3.0 V
CE
BE
V
@ I
/I =
250
C B
CE(sat)
V
@ I
/I =
250
C B
CE(sat)
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0 4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 9. “On” Voltages
ORDERING INFORMATION
Device
Package
Shipping
2N6034G
TO−225
(Pb−Free)
500 Units / Box
2N6035G
2N6036G
2N6038G
2N6039G
TO−225
(Pb−Free)
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
225
CASE 77
−
09
ISSUE AD
4
DATE 25 MAR 2015
1
3
2
2
1
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A1
Q
A
MILLIMETERS
PIN 4
BACKSIDE TAB
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
b2
c
P
D
E
1
2
3
e
L
L1
P
Q
L1
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
Y
=
Y
e
ar
WW
= Work Week
XXXXX = Device Code
= Pb
−
Free Package
e
2X
c
G
b
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
FRONT VIEW
SIDE VIEW
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
STYLE 4:
STYLE 5:
PIN 1.
MT 1
PIN 1.
EMITTER
2., 4.
COLLECTOR
3. BASE
PIN 1.
CATHODE
2., 4.
ANODE
3. GATE
PIN 1.
ANODE 1
2., 4.
ANODE 2
3. GATE
2., 4.
COLLECTOR
3. EMITTER
2., 4.
MT 2
3. GATE
STYLE 6:
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
CATHODE
2., 4.
GATE
3. ANODE
PIN 1.
MT 1
2., 4.
GATE
3. MT
2
PIN 1.
SOURCE
2., 4.
GATE
3. DRAIN
PIN 1.
GATE
2., 4.
DRAIN
3. SOURCE
PIN 1.
SOURCE
2., 4.
DRAIN
3. GATE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO
−
225
PAGE 1 OF 1
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